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1. 发明授权

US07279760B2 Nanotube relay device 失效
标题翻译：纳米管继电器
公开(公告)号：US07279760B2
公开(公告)日：2007-10-09
申请号：US10508288
申请日：2002-05-02
申请人： Susanne Viefers , Tomas Nord , Jari Kinaret
发明人： Susanne Viefers , Tomas Nord , Jari Kinaret
IPC分类号： H01L29/86
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , Y10S977/742 , Y10S977/94
摘要： The present invention relates to a nanotube device (100, 600), comprising a nanotube with a longitudinal and a lateral extension, a structure for supporting at least a first part of the nanotube, and first means for exerting a force upon the nanotube in a first direction defined by its lateral extension. At least a second part of the nanotube protrudes beyond the support of said structure, so that when said force exceeds a certain level, the second part of the nanotube will flex in the direction of its lateral extension, and thereby close a first electrical circuit. Suitably, the first means for exerting said force upon the nanotube is an electrical means, the force being created by applying a voltage to the means.
摘要翻译：纳米管装置技术领域本发明涉及纳米管装置（100,600），其包括具有纵向和横向延伸的纳米管，用于支撑纳米管的至少第一部分的结构，以及用于在纳米管中施加力的第一装置第一个方向由其横向延伸限定。纳米管的至少第二部分突出超过所述结构的支撑，使得当所述力超过一定水平时，纳米管的第二部分将沿其横向延伸的方向弯曲，从而闭合第一电路。适当地，用于在纳米管上施加所述力的第一种方法是电气装置，该力通过向该装置施加电压而产生。

2. 发明授权

US07390527B2 Method for manufacturing a nanostructure at a predetermined point on supporting carrier 失效
标题翻译：在支撑载体上的预定点制造纳米结构的方法
公开(公告)号：US07390527B2
公开(公告)日：2008-06-24
申请号：US10500384
申请日：2002-12-30
申请人： Per Hyldgaard , Dinko Chakarov , Bengt Lundqvist
发明人： Per Hyldgaard , Dinko Chakarov , Bengt Lundqvist
IPC分类号： B05D5/12 , B05D3/00 , C23C14/00
CPC分类号： C01B21/064 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01B2202/22 , C01P2004/13 , H01L51/0048 , H01L51/0052 , Y10T428/24802 , Y10T428/30
摘要： A method is for manufacturing a nanostructure in-situ, at least one predetermined point on a supporting carrier. The method includes choosing a suitable material for a substrate in the carrier, creating the substrate, and preparing a template on the substrate so that the template covers the predetermined point. The template is given a proper shape according to the desired final shape of the nanostructure, and a film of nanosource material with desired dimensions is formed on the template. The film of nanosource material is made to restructure from a part of the template, thus forming the desired nanostructure. Suitably, the template includes a first and a second area which have different properties with respect to the nanosource material.
摘要翻译：一种用于原位制造纳米结构的方法，在支撑载体上至少一个预定点。该方法包括为载体中的衬底选择合适的材料，产生衬底，以及在衬底上制备模板，使模板覆盖预定点。根据所需的纳米结构的最终形状给予模板适当的形状，并且在模板上形成具有所需尺寸的纳米材料的膜。使纳米材料的薄膜从模板的一部分重组，从而形成所需的纳米结构。适当地，模板包括相对于纳米材料具有不同性质的第一和第二区域。

3. 发明申请

US20050230710A1 Nanotube relay device 失效
标题翻译：纳米管继电器
公开(公告)号：US20050230710A1
公开(公告)日：2005-10-20
申请号：US10508288
申请日：2002-05-02
申请人： Susanne Viefers , Thomas Nord , Jari Kinaret
发明人： Susanne Viefers , Thomas Nord , Jari Kinaret
IPC分类号： B82B1/00 , B81B3/00 , G11C11/56 , G11C13/02 , G11C23/00 , H01H59/00 , H01L29/73
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , Y10S977/742 , Y10S977/94
摘要： The present invention relates to a nanotube device (100, 600), comprising a nanotube with a longitudinal and a lateral extension, a structure for supporting at least a first part of the nanotube, and first means for exerting a force upon the nanotube in a first direction defined by its lateral extension. At least a second part of the nanotube protrudes beyond the support of said structure, so that when said force exceeds a certain level, the second part of the nanotube will flex in the direction of its lateral extension, and thereby close a first electrical circuit. Suitably, the first means for exerting said force upon the nanotube is an electrical means, the force being created by applying a voltage to the means.
摘要翻译：纳米管装置技术领域本发明涉及纳米管装置（100,600），其包括具有纵向和横向延伸的纳米管，用于支撑纳米管的至少第一部分的结构，以及用于在纳米管中施加力的第一装置第一个方向由其横向延伸限定。纳米管的至少第二部分突出超过所述结构的支撑，使得当所述力超过一定水平时，纳米管的第二部分将沿其横向延伸的方向弯曲，从而闭合第一电路。适当地，用于在纳米管上施加所述力的第一种方法是电气装置，该力通过向该装置施加电压而产生。

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