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1. 发明申请

US20070279119A1 GATE DRIVING DEVICE FOR DRIVING INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：用于驱动绝缘栅双极晶体管的闸门驱动装置及其驱动方法
公开(公告)号：US20070279119A1
公开(公告)日：2007-12-06
申请号：US11737897
申请日：2007-04-20
申请人： Yuichi Onozawa
发明人： Yuichi Onozawa
IPC分类号： H03K17/60 , H03K17/06
CPC分类号： H03K17/567 , H01L2924/0002 , H03K17/0828 , H01L2924/00
摘要： A gate driving device includes an IGBT and a gate drive circuit, which includes a gate resistor and a gate drive unit. The gate of the IGBT is connected to the gate resistor, and the emitter of the IGBT is connected to a low voltage potential. The peak impurity concentration of the collector of the IGBT is equal to or greater than 1×1016 cm−3, and the time constant, which is the product of a gate input capacitance (Cg) of the IGBT and a resistance value of the gate resistor (Rg) is equal to or less than 500 ns. The IGBT is turned ON or OFF by inputting an ON or OFF signal respectively to the gate via the gate resistor. The gate driving device can lower the spike voltage and reduce the turn-off power loss at the same time in an inductive load circuit when the IGBT is turned off.
摘要翻译：栅极驱动装置包括IGBT和栅极驱动电路，其包括栅极电阻器和栅极驱动单元。 IGBT的栅极连接到栅极电阻，IGBT的发射极连接到低电压电位。 IGBT的集电极的峰值杂质浓度等于或大于1×10 16 cm -3，而时间常数是栅极输入电容的乘积（Cg）和栅极电阻（Rg）的电阻值等于或小于500ns。通过栅极电阻将栅极分别输入ON或OFF信号，将IGBT导通或关断。栅极驱动装置可以在IGBT关断时在感性负载电路中同时降低尖峰电压并降低关断功率损耗。

2. 发明申请

US20070221963A1 JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING POWER SUPPLY, AND SWITCHING POWER SUPPLY 有权
标题翻译：连接场效应晶体管，用于切换电源的集成电路和开关电源
公开(公告)号：US20070221963A1
公开(公告)日：2007-09-27
申请号：US11690825
申请日：2007-03-24
申请人： Masaru SAITO , Koji SONOBE
发明人： Masaru SAITO , Koji SONOBE
IPC分类号： H01L29/80
CPC分类号： H01L29/0692 , H01L27/098 , H01L29/1066 , H01L29/808 , H02M1/36
摘要： A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors.
摘要翻译：开关电源具有启动电路，该启动电路包括场效应晶体管（JFET），场效应晶体管（JFET）具有形成在p型衬底的表面层中的栅极区域（p型阱区域）和漂移区域第一n型井区）。在漂移区域周围形成多个源极区域（第二n型阱区域）。漏极区（第三n型阱区）形成在源区的中央。漏极区域和源极区域可以同时形成。连接到源极区域的源电极布线的金属布线被分成至少两个组，以形成至少两个结场效应晶体管。

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