专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08003534B2 Method of forming semiconductor devices in wafer assembly 有权
公开(公告)号：US08003534B2
公开(公告)日：2011-08-23
申请号：US12980182
申请日：2010-12-28
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： H01L21/44
CPC分类号： B81C1/00873
摘要： An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

2. 发明申请

US20110092046A1 Method of forming semiconductor devices in wafer assembly 有权
标题翻译：在晶片组件中形成半导体器件的方法
公开(公告)号：US20110092046A1
公开(公告)日：2011-04-21
申请号：US12980182
申请日：2010-12-28
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： H01L21/78 , H01L21/32
CPC分类号： B81C1/00873
摘要： An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.
摘要翻译：一种用于将半导体器件保持在晶片中的装置和方法。棒连接到晶片。第一侧壁包括第一端和第二侧，并且在其第一端处连接到杆。第一突片包括第一端和第二端，并且在其第一端处连接到第一侧壁的第二端并且在其第二端处连接到半导体器件的第一侧。第一突片的厚度小于棒的厚度和第一侧壁的厚度。

3. 发明授权

US07913544B1 Scanning probe devices and methods for fabricating same 有权
标题翻译：扫描探针装置及其制造方法
公开(公告)号：US07913544B1
公开(公告)日：2011-03-29
申请号：US11985622
申请日：2007-11-15
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： G01Q70/16
CPC分类号： G01Q70/16 , G01Q70/10
摘要： The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.
摘要翻译：本发明涉及扫描探针，其中悬臂通过集成触笔基座接触触针，以及用于制造这种探针的方法。与其他类型的扫描探针相比，该探针提供了许多优点，以避免在某些应用中需要柔软的反射涂层，并且提供尖锐的触针尖端的简单制造，关于功能化尖端的灵活性以及最小的热漂移减少双压缩效应。这些特征的优点有助于通常采集样品的高分辨率图像，特别是在液体中。

4. 发明授权

US08397555B1 Scanning probe devices 有权
标题翻译：扫描探头设备
公开(公告)号：US08397555B1
公开(公告)日：2013-03-19
申请号：US13036119
申请日：2011-02-28
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： G01Q60/48 , G01Q70/16 , C23F1/00
CPC分类号： G01Q70/16 , G01Q70/10
摘要： The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.
摘要翻译：本发明涉及扫描探针，其中悬臂通过集成触笔基座接触触针，以及用于制造这种探针的方法。与其他类型的扫描探针相比，该探针提供了许多优点，以避免在某些应用中需要柔软的反射涂层，并且提供尖锐的触针尖端的简单制造，关于功能化尖端的灵活性以及最小的热漂移减少双压缩效应。这些特征的优点有助于通常采集样品的高分辨率图像，特别是在液体中。

5. 发明申请

US20080116533A1 Semiconductor device in wafer assembly 有权
标题翻译：晶圆组件中的半导体器件
公开(公告)号：US20080116533A1
公开(公告)日：2008-05-22
申请号：US11603562
申请日：2006-11-22
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81C1/00873
摘要： An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.
摘要翻译：一种用于将半导体器件保持在晶片中的装置和方法。棒连接到晶片。第一侧壁包括第一端和第二侧，并且在其第一端处连接到杆。第一突片包括第一端和第二端，并且在其第一端处连接到第一侧壁的第二端并且在其第二端处连接到半导体器件的第一侧。第一突片的厚度小于棒的厚度和第一侧壁的厚度。

6. 发明授权

US09389244B2 Vertical embedded sensor and process of manufacturing thereof 有权
标题翻译：垂直嵌入式传感器及其制造工艺
公开(公告)号：US09389244B2
公开(公告)日：2016-07-12
申请号：US14271344
申请日：2014-05-06
申请人： Applied Nanostructures, Inc.
发明人： Jeremy J. Goeckeritz , Gary D. Aden , Ami Chand , Josiah F. Willard
IPC分类号： G01Q70/14 , G01Q60/58 , G01Q70/16 , B82Y35/00
CPC分类号： G01Q70/14 , B82Y35/00 , G01Q60/58 , G01Q70/16
摘要： A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (MEMS) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever. A first conductive material is disposed on the hollow tip, followed by a dielectric layer thus embedding the conductive layer. A nanometer hole is milled through the tip, first conductor and dielectric materials. A metal sensor element is deposited by means of electrochemical deposition in the through-hole. A second conductor is deposited on a lower layer. The first and second conductors form electrical connections to the sensor element in the tip. The intra-tip metal, in combination with other layers, may form a thermocouple, thermistor, Schottky diode, ultramicroelectrode, or Hall Effect sensor, and used as a precursor to grow spikes such a nanotubes.
摘要翻译：具有限定在顶端顶点处的纳米传感器元件的扫描探针组件及其使用微机电系统（MEMS）处理技术的制造方法。组件包括探针主体，向外延伸的悬臂和悬臂末端的中空尖端。第一导电材料设置在中空尖端上，随后是介电层从而嵌入导电层。通过尖端，第一导体和电介质材料研磨纳米孔。金属传感器元件通过电化学沉积沉积在通孔中。第二导体沉积在下层上。第一和第二导体与尖端中的传感器元件形成电连接。尖端金属与其他层结合可形成热电偶，热敏电阻，肖特基二极管，超微电极或霍尔效应传感器，并用作生长诸如纳米管的尖峰的前体。

7. 发明申请

US20150204734A1 MICRO HEATER INTEGRATED WITH THERMAL SENSING ASSEMBLY 审中-公开
标题翻译：微型加热器与热感器组合
公开(公告)号：US20150204734A1
公开(公告)日：2015-07-23
申请号：US14600967
申请日：2015-01-20
申请人： Applied Nanostructures, Inc.
发明人： Gary D. Aden , Josiah F. Willard
IPC分类号： G01K15/00 , G01K7/22 , G01K7/02
CPC分类号： G01K15/005 , G01K7/02 , G01K7/22 , G01K17/006
摘要： A calibration device including a thermal sensing device, and a reference heater, where the heater and the sensing device are integrated together, the heater and the sensing have at least one dimension substantially in common, and the over all dimensions are in the range of thermal micro probes, 100 nm-500 microns.
摘要翻译：一种包括热感测装置和参考加热器的校准装置，其中加热器和感测装置集成在一起，加热器和感测具有基本上相同的至少一个维度，并且所有尺寸都在热的范围内微探针，100nm-500微米。

8. 发明授权

US08828243B2 Scanning probe having integrated silicon tip with cantilever 有权
标题翻译：具有集成硅尖端与悬臂的扫描探针
公开(公告)号：US08828243B2
公开(公告)日：2014-09-09
申请号：US12874879
申请日：2010-09-02
申请人： Rakesh Poddar , Ami Chand
发明人： Rakesh Poddar , Ami Chand
IPC分类号： G01Q70/08 , G01Q60/38 , G01Q70/10 , B82Y35/00
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q70/10 , Y10T156/10
摘要： A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.
摘要翻译：用于原子力显微镜（AFM）或其他扫描探针显微镜的悬臂尖组件及其基于微机电系统（MEMS）的制造方法。两个晶体硅晶片和附着的氧化物和氮化物层通过中间介电层结合在一起。通过硅的各向异性蚀刻在其一个晶片中形成具有四面体硅探针尖端的薄悬臂梁，并且在另一个晶片中形成支撑结构以支撑悬臂的近端，优选地具有由各向异性硅形成的倾斜面蚀刻。悬臂可以是硅或氮化硅。

9. 发明申请

US20120060244A1 Scanning probe having integrated silicon tip with cantilever 有权
标题翻译：具有集成硅尖端与悬臂的扫描探针
公开(公告)号：US20120060244A1
公开(公告)日：2012-03-08
申请号：US12874879
申请日：2010-09-02
申请人： Rakesh Poddar , Ami Chand
发明人： Rakesh Poddar , Ami Chand
IPC分类号： G01Q70/08 , B32B38/10 , B32B37/00
CPC分类号： G01Q60/38 , B82Y35/00 , G01Q70/10 , Y10T156/10
摘要： A cantilever-tip assembly for atomic force microscopy (AFM) or other scanning probe microscopy and its method of making based on micro-electromechanical systems (MEMS). Two crystalline silicon wafers and attached oxide and nitride layers are bonded together across an intermediate dielectric layer. A thin cantilever with a tetrahedral silicon probe tip at its distal end are formed in one wafer by anisotropic etching of silicon and a support structure is formed in the other wafer to support the proximal end of the cantilever preferably having an inclined face formed by anisotropic silicon etching. The cantilever may be silicon or silicon nitride.
摘要翻译：用于原子力显微镜（AFM）或其他扫描探针显微镜的悬臂尖组件及其基于微机电系统（MEMS）的制造方法。两个晶体硅晶片和附着的氧化物和氮化物层通过中间介电层结合在一起。通过硅的各向异性蚀刻在其一个晶片中形成具有四面体硅探针尖端的薄悬臂梁，并且在另一个晶片中形成支撑结构以支撑悬臂的近端，优选地具有由各向异性硅形成的倾斜面蚀刻。悬臂可以是硅或氮化硅。

10. 发明授权

US10352781B2 Micro heater integrated with thermal sensing assembly 有权
公开(公告)号：US10352781B2
公开(公告)日：2019-07-16
申请号：US14600967
申请日：2015-01-20
申请人： Applied Nanostructures, Inc.
发明人： Gary D. Aden , Josiah F. Willard
IPC分类号： G01K15/00 , G01K7/02 , G01K7/22 , G01K17/00
摘要： A calibration device including a thermal sensing device, and a reference heater, where the heater and the sensing device are integrated together, the heater and the sensing have at least one dimension substantially in common, and the over all dimensions are in the range of thermal micro probes, 100 nm-500 microns.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式