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1. 发明授权

US08986453B2 Device for coating substrates disposed on a susceptor 有权
标题翻译：用于涂布设置在基座上的基板的装置
公开(公告)号：US08986453B2
公开(公告)日：2015-03-24
申请号：US12664648
申请日：2008-06-13
申请人： Johannes Käppeler , Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron
发明人： Johannes Käppeler , Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron
IPC分类号： B05C11/00 , C23C16/458 , C23C16/46 , C30B25/12 , H01L21/687
CPC分类号： C23C16/4586 , C23C16/4583 , C23C16/46 , C30B25/12 , H01L21/68735
摘要： The invention relates to a device for coating substrates having a process chamber (1) disposed in a reactor housing and a two-part, substantially cup-shaped susceptor (2, 3) disposed therein, forming an upper susceptor part (2) with the cup floor thereof having a flat plate (2′) and a lower susceptor part (3) with the cup side walls thereof, the outer side (4) of the plate (2′) of the upper susceptor part (2) facing upwards toward the process chamber (1) and forming a contact surface for at least one substrate, the upper susceptor part (2) contacting a front edge (3″) of the lower susceptor part (3) at the edge of said upper susceptor part (2), the lower susceptor part (3) being supported by a susceptor carrier (6), and heating zones (A, B, C) for heating the upper susceptor part (2) being disposed below the plate (2′). An advantageous refinement of the invention proposes that the upper susceptor part (2) be removable from the process chamber (1) separately from the lower susceptor part (3), and the joint (30) between the edge of the upper susceptor part (2) and the front edge (3″) of the lower susceptor part (3) be formed as a heat conduction barrier.
摘要翻译：本发明涉及一种用于涂覆基材的装置，其具有设置在反应器壳体中的处理室（1）和设置在反应器壳体中的两部分基本杯形基座（2,3），形成上基座部分（2），其中其底板具有平板（2'）和具有杯侧壁的下基座部分（3），上托架部分（2）的板（2'）的外侧（4）朝向所述处理室（1）并且形成用于至少一个基板的接触表面，所述上基座部分（2）在所述上基座部分（2）的边缘处接触所述下基座部分（3）的前边缘（3“），），下感受器部分（3）由基座托架（6）支撑，加热区（A，B，C）用于加热设置在板（2'）下方的上基座部分（2）。本发明的有益改进提出，上基座部分（2）可以与下基座部分（3）分离地从处理室（1）移除，并且上基座部分（2）的边缘之间的接头（30））和下基座部（3）的前缘（3“）形成为导热屏障。

2. 发明授权

US08298337B2 Gas inlet element for a CVD reactor 失效
标题翻译：用于CVD反应器的气体入口元件
公开(公告)号：US08298337B2
公开(公告)日：2012-10-30
申请号：US11814913
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.
摘要翻译：本发明涉及一种用于具有腔室（4）的CVD反应器的气体入口元件（2），其具有多个底部侧出口（23），经由该腔室（4）经由边缘引入腔室（4）的工艺气体（10）离开CVD反应器（1）的处理室（21）。为了均化气体组成，本发明提供了至少一个混合室装置（11,12,13）位于进入开口（10）的上游，并且至少两个处理气体在该混合中彼此混合室安排。

3. 发明授权

US08157915B2 CVD reactor having a process-chamber ceiling which can be lowered 有权
标题翻译：具有可以降低的处理室顶板的CVD反应器
公开(公告)号：US08157915B2
公开(公告)日：2012-04-17
申请号：US12297973
申请日：2007-04-17
申请人： Martin Dauelsberg , Johannes Käppeler , Bernd Schulte
发明人： Martin Dauelsberg , Johannes Käppeler , Bernd Schulte
IPC分类号： B05D3/06 , H01L21/44 , C23F1/00 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4411 , C23C16/45572 , C23C16/46
摘要： The invention relates to an apparatus for the deposition of one or more layers on a substrate (4), which comprises a process chamber (2) which is arranged in a reactor housing (1) and has a heatable bottom (3) on which the substrate rests and a lid (5) extending parallel to the bottom (3) and also a gas inlet facility (6) for introduction of process gases. The distance (H) between the process chamber lid (5) and the process chamber bottom (3) can be reduced to virtually zero. A cooling apparatus (7) by means of which the process chamber lid (5) is cooled in the process position during deposition of the layers is provided above the process chamber lid (5), with the distance between the cooling apparatus (7) and the process chamber lid (5) increasing as the distance (H) between the process chamber lid (5) and the process chamber bottom (3) is reduced.
摘要翻译：本发明涉及一种用于在衬底（4）上沉积一层或多层的设备，其包括设置在反应器壳体（1）中并具有可加热底部（3）的处理室（2），其上基板支座和平行于底部（3）延伸的盖（5）以及用于引入工艺气体的气体入口设备（6）。处理室盖（5）和处理室底部（3）之间的距离（H）可以减小到几乎为零。在处理室盖（5）的上方设置冷却装置（7），处理室盖（5）在沉积层期间在处理位置被冷却，处理室盖（5）之间的距离与冷却装置（7）和处理室盖（5）随着处理室盖（5）和处理室底部（3）之间的距离（H）而增加。

4. 发明授权

US09359674B2 Apparatus and method for dielectric deposition 有权
标题翻译：电介质沉积的设备和方法
公开(公告)号：US09359674B2
公开(公告)日：2016-06-07
申请号：US14321233
申请日：2014-07-01
申请人： Aixtron, Inc.
发明人： Stephen Edward Savas , Sai Mantripragada , Sooyun Joh , Allan B. Wiesnoski , Carl Galewski
IPC分类号： C23C16/503 , C23C16/455 , C23C16/509 , C23C16/54 , H01J37/32
CPC分类号： C23C16/503 , C23C16/45574 , C23C16/45578 , C23C16/509 , C23C16/54 , C23C16/545 , H01J37/32036 , H01J37/32532
摘要： The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.
摘要翻译：所公开的发明包括可以用于在非常低的缺陷密度的非常低的温度下在分离的或连续的纸幅基材上等离子体沉积薄层材料的装置和方法。通过控制气体组分的引入顺序，可以实现气相化学的优异控制。它还对气体中的化学过程速率和离子轰击的功率和能量的量具有实质上独立的控制。这种控制使得高质量的单层和多层薄膜能够在非常低的温度条件下成本有效且均匀地沉积在较大的区域上。

5. 发明授权

US09096933B2 Methods for plasma processing 有权
标题翻译：等离子体处理方法
公开(公告)号：US09096933B2
公开(公告)日：2015-08-04
申请号：US14253206
申请日：2014-04-15
申请人： Aixtron, Inc.
发明人： Stephen E. Savas , Carl Galewski , Allan B. Wiesnoski , Sai Mantripragada , Sooyun Joh
IPC分类号： C23C16/503 , C23C16/24 , C23C16/26 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/54 , H01J37/32 , H01L21/67
CPC分类号： H01J37/32541 , C23C16/24 , C23C16/26 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/407 , C23C16/4412 , C23C16/45504 , C23C16/45519 , C23C16/45591 , C23C16/466 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/545 , H01J37/32036 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
摘要翻译：适用于半导体，导体或绝缘膜的沉积，蚀刻或处理的等离子体处理的装置和方法。等离子体发生单元包括在衬底的处理侧上的一个或多个细长电极和靠近衬底相对侧的中性电极。气体可以在电动电极附近注入，该电极分解并产生朝向衬底区域流动的活化物质。然后，该气体在动力电极和基底之间流入延伸的过程区域，以高速率与基底以高速率提供受控且连续的反应性，有效利用反应物原料。气体通过电源电极或电极和分配器之间的通道耗尽。

6. 发明授权

US08308867B2 Device for the temperature control of the surface temperatures of substrates in a CVD reactor 有权
标题翻译：用于温度控制CVD反应器中的衬底的表面温度的装置
公开(公告)号：US08308867B2
公开(公告)日：2012-11-13
申请号：US12603000
申请日：2008-06-03
申请人： Walter Franken , Johannes Käppeler
发明人： Walter Franken , Johannes Käppeler
IPC分类号： C23C16/46 , C23C16/455
CPC分类号： C23C16/46 , C23C16/4584 , C23C16/52
摘要： The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.
摘要翻译：本发明涉及一种具有多个旋转工作台（2）的CVD反应器，所述旋转工作台（2）支撑在动态气垫（3）上的旋转驱动的基座（1）上，其中每个气垫（3）由单独控制的气流形成，取决于由温度测量装置（4）测量的表面温度的气体流量可以由单个致动器（5）改变。本发明还包括承载基座（1）并与基座（1）一起旋转的载体（6）。结束于载体（6）的公共气体供应管线（7）是本发明的关键，并且提供布置在载体（6）上的致动器（5）与形成气体流的气体。

7. 发明授权

US08152924B2 CVD reactor comprising a gas inlet member 有权
标题翻译： CVD反应器包括气体入口构件
公开(公告)号：US08152924B2
公开(公告)日：2012-04-10
申请号：US12094972
申请日：2006-11-11
申请人： Martin Dauelsberg , Johannes Käppeler , Conor Martin
发明人： Martin Dauelsberg , Johannes Käppeler , Conor Martin
IPC分类号： C23C16/455 , C23C16/458 , C23F16/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45508 , C23C16/45574 , C23C16/45591
摘要： The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (4), extending in a vertical direction, of a gas inlet member (3), fixed in place with respect to a reactor housing, into a process chamber (1), extending in a horizontal direction, wherein the process gas leaves a gas outlet opening of a portion of the gas inlet member (3), protruding into the center of the rotationally symmetrical process chamber (1), and flows in a radially outward direction via a base (8′) of the process chamber (1), extending in a horizontal direction and rotating about the center, on which base the substrate lies. In order to improve the gas flow directly above the base of the process chamber, it is proposed that the front (3′) of the gas inlet member (3) protrudes into a pot-like recess (23) and an end portion (6′) of a gas deflecting face (6) is flush with the base (8′).
摘要翻译：本发明涉及一种用于通过在气体入口构件（3）的垂直方向上延伸的流动通道（4）引入的处理气体在衬底上沉积至少一层的装置，该气体入口构件固定在适当位置相对于反应器壳体，进入沿水平方向延伸的处理室（1），其中处理气体离开气体入口构件（3）的一部分的气体出口，突出到旋转对称的中心处理室（1），并且经由处理室（1）的基部（8'）在径向向外的方向上流动，在水平方向上延伸并围绕中心旋转，衬底位于基底上。为了改善处理室底部正上方的气流，提出了气体入口部件（3）的前部（3'）突出到一个盆形凹部（23）和一个端部（6 气体偏转面（6）'与基座8'齐平。

8. 发明授权

US08114480B2 Method for self-limiting deposition of one or more monolayers 有权
标题翻译：用于自限制沉积一个或多个单层的方法
公开(公告)号：US08114480B2
公开(公告)日：2012-02-14
申请号：US11763231
申请日：2007-06-14
申请人： Peter Baumann , Johannes Lindner
发明人： Peter Baumann , Johannes Lindner
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/40 , C23C16/45553
摘要： The invention relates to a method for deposition of at least one layer containing at least one first component on at least one substrate in a process chamber, wherein first and second starting materials are introduced in gaseous form into the process chamber in alternation cyclically, at least the first starting material of which contains the first component, to deposit essentially only one layer of the first component in each cycle. To widen the spectrum of available starting materials suitable for the process, it is proposed that the first starting material shall consist of two β-diketones and one diene coordinated with one ruthenium atom, and a limiter shall be introduced into the process chamber simultaneously with or some time after the first starting material, such that deposition of the first component on the substrate is automatically concluded after the first layer is completed, wherein the limiter is or contains octane, butyl acetates, tetrahydrofuran, methanol, ethanol, isobutylamines, triethylamines, butanol, cyclohexane, isooctane, dioxane, dimethylformamide, pyridine and/or toluene.
摘要翻译：本发明涉及一种用于在处理室中的至少一个基底上沉积含有至少一种第一组分的至少一层的方法，其中将第一和第二起始材料以气态形式循环地以交替方式引入所述处理室，至少其第一起始材料包含第一组分，以在每个循环中仅基本沉积第一组分的一层。为了扩大适用于该工艺的可用起始材料的光谱，提出第一起始材料应由两个二酮和一个与一个钌原子配位的二烯构成，并且限制器应与或者在第一起始材料之后的一段时间，使得在第一层完成之后，第一组分在衬底上的沉积自动结束，其中限制器是或含有辛烷，乙酸丁酯，四氢呋喃，甲醇，乙醇，异丁胺，三乙胺，丁醇，环己烷，异辛烷，二恶烷，二甲基甲酰胺，吡啶和/或甲苯。

9. 发明授权

US08062426B2 CVD reactor with RF-heated process chamber 有权
标题翻译：具有RF加热处理室的CVD反应器
公开(公告)号：US08062426B2
公开(公告)日：2011-11-22
申请号：US11722686
申请日：2005-12-12
申请人： Johannes Käppeler , Frank Wischmeyer
发明人： Johannes Käppeler , Frank Wischmeyer
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C30B25/10
摘要： The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.
摘要翻译：本发明涉及沉积装置，特别是在至少一个基底上的结晶涂层，特别是晶体。所述装置包括由许多壁元件（1,2,3,4）组成的处理室（5），所述壁元件（1,2,3,4）导电并且端对端放置，从而形成触点（2'，2“，3'，3”）; 封闭处理室的壁元件（1,2,3,4）并由非导电材料制成的反应器壳体（6），以及围绕所述壁元件（1,2,3,4）的RF加热线圈，的治疗室。本发明的特征在于，在反应器壳体（6）和处理室的壁（1,2,3,4）之间植入大块单件式屏蔽加热管（8）。所述管道的材料是导电的，使得其被由RF线圈产生的RF场引起的涡流加热，并且使得其大大地吸收RF场并且加热壁（1,2,3,4）的壁治疗室。

10. 发明授权

US07981472B2 Methods of providing uniform gas delivery to a reactor 失效
标题翻译：向反应器提供均匀气体输送的方法
公开(公告)号：US07981472B2
公开(公告)日：2011-07-19
申请号：US12553917
申请日：2009-09-03
申请人： Jeremie J. Dalton , M. Ziaul Karim , Ana R. Londergan
发明人： Jeremie J. Dalton , M. Ziaul Karim , Ana R. Londergan
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/45544 , C23C16/45574
摘要： A method of introducing gasses through a gas distribution system into a reactor involves flowing the gasses through at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece. During different time intervals, a purge gas and different reactive precursors are flowed into the reactor from different ones of the gas source orifice arrays. One of the precursors may be associated with a soft saturating atomic layer deposition half reaction and another of the precursors associated with a strongly saturating atomic layer deposition half reaction. An upper one of the gas source orifice arrays may be a relatively planar gas orifice array.
摘要翻译：将气体通过气体分配系统引入反应器的方法包括使气体通过至少两个不同的气体源孔口阵列流动，所述至少两个不同的气体源孔口阵列沿着由气体流动方向限定的轴线从气体源孔阵列朝向工件。在不同的时间间隔期间，吹扫气体和不同的反应性前体从不同的气源孔阵列流入反应器。其中一种前体可能与软饱和原子层沉积半反应相关联，另一种与前体相互连接，具有强饱和原子层沉积半反应。气源孔阵列中的上一个可以是相对平面的气体孔阵列。

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