专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07557388B2 MOSFET formed on a strained silicon layer 有权
标题翻译：形成在应变硅层上的MOSFET
公开(公告)号：US07557388B2
公开(公告)日：2009-07-07
申请号：US11398118
申请日：2006-04-05
申请人： Sun-Ghil Lee , Young-Pil Kim , Yu-Gyun Shin , Jong-Wook Lee , Young-Eun Lee
发明人： Sun-Ghil Lee , Young-Pil Kim , Yu-Gyun Shin , Jong-Wook Lee , Young-Eun Lee
IPC分类号： H01L31/00 , H01L35/26 , H01L31/117
CPC分类号： C30B29/06 , C30B15/00
摘要： A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.
摘要翻译：公开了一种形成在应变硅层上的半导体器件及其制造方法。根据本发明，在单晶硅衬底上形成第一硅锗层; 第二硅锗层形成在第一硅锗层上，第二硅锗层的锗浓度在约1重量％至约15重量％的范围内，基于第二硅锗层的总重量 ; 在第二硅锗层上形成应变硅层; 在应变硅层的第一部分处形成隔离层; 在应变硅层上形成栅极结构; 并且源极/漏极区域形成在与栅极结构相邻的应变硅层的第二部分处以形成晶体管。

82. 发明授权

US07227179B2 Circuit materials, circuits, multi-layer circuits, and methods of manufacture thereof 有权
标题翻译：电路材料，电路，多层电路及其制造方法
公开(公告)号：US07227179B2
公开(公告)日：2007-06-05
申请号：US10613924
申请日：2003-07-03
申请人： Michael E. St. Lawrence , Murali Sethumadhavan , Scott D. Kennedy
发明人： Michael E. St. Lawrence , Murali Sethumadhavan , Scott D. Kennedy
IPC分类号： H01L35/26 , H01L51/00
CPC分类号： H01L23/49894 , C09K19/3804 , H01L2924/0002 , H05K1/0353 , H05K3/4626 , H05K2201/0141 , Y10T428/24917 , H01L2924/00
摘要： Crosslinkable liquid crystalline polymer compositions for use as dielectric materials in circuit materials, circuits, and multi-layer circuits are disclosed. The crosslinkable liquid crystalline polymer compositions comprise crosslinkable liquid crystalline polymers that preferably comprise end groups selected from the group consisting of phenyl maleimide, nadimide, phenyl acetylene, or combinations of the foregoing. Additionally, the crosslinkable liquid crystalline polymer compositions may further comprise particulate fillers and/or fibrous webs. The crosslinkable liquid crystalline polymer compositions provided improved electrical and mechanical properties.
摘要翻译：公开了用作电路材料，电路和多层电路中的介电材料的可交联液晶聚合物组合物。可交联液晶聚合物组合物包含可交联的液晶聚合物，其优选包含选自苯基马来酰亚胺，纳二酰亚胺，苯基乙炔或前述的组合的端基。此外，可交联液晶聚合物组合物还可以包含颗粒填料和/或纤维网。可交联液晶聚合物组合物提供了改善的电学和机械性能。

83. 发明申请

US20050028857A1 Thermoelectric module with Si/SiC and B4C/B9C super-lattice legs 失效
标题翻译：具有Si / SiC和B4C / B9C超晶格腿的热电模块
公开(公告)号：US20050028857A1
公开(公告)日：2005-02-10
申请号：US10818130
申请日：2004-04-05
申请人： Saeid Ghamaty , Norbert Elsner , John Bass
发明人： Saeid Ghamaty , Norbert Elsner , John Bass
IPC分类号： H01L31/04 , H01L31/042 , H01L35/12 , H01L35/22 , H01L35/26 , H01L35/28 , H01L35/34
CPC分类号： H01L35/22 , H01L35/26 , H01L35/34
摘要： A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.
摘要翻译：超晶格热电器件。该装置由p腿和n腿组成，每个腿由大量具有不同电子带隙的两种材料的非常薄的交替层组成。器件中的n脚由Si和SiC的交替层组成。 p腿由B4C和B9C的交替层组成。在优选的实施方案中，这些层是约100埃厚。根据本发明制造的热电模块对于冷却应用以及发电都是有用的。该优选实施例是一种约6cm×6cm×0.76cm的热电10×10蛋箱型模块，其设计为产生70瓦，温度差为300摄氏度，模块效率约为30％。该模块具有98个活动热电腿，每个支腿具有超过3百万个超格子层。

84. 发明授权

US06853015B2 Optical semiconductor device including InGaAlAs doped with Zn 有权
标题翻译：包括掺杂Zn的InGaAlAs的光学半导体器件
公开(公告)号：US06853015B2
公开(公告)日：2005-02-08
申请号：US10173753
申请日：2002-06-19
申请人： Tomonobu Tsuchiya
发明人： Tomonobu Tsuchiya
IPC分类号： H01S5/343 , H01L21/205 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/34 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L35/26
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02581 , H01S5/2223 , H01S5/2226 , H01S5/2231 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3086 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/34366
摘要： A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions.
摘要翻译：通过使用使用InGaAlAs四元合金的Zn的使用金属有机气相外延的Zn浓度的增加和Zn扩散的减少之间的平衡，具有几nm的陡的Zn分布的调制掺杂多量子阱结构，以及 Zn浓度和晶体组成的范围被定义为等于或小于在每个InGaAlAs组合物中Zn扩散的临界浓度。

85. 发明授权

US06847060B2 Bipolar transistor with graded base layer 有权
公开(公告)号：US06847060B2
公开(公告)日：2005-01-25
申请号：US10121444
申请日：2002-04-10
申请人： Roger E. Welser , Paul M. Deluca , Charles R. Lutz , Kevin S. Stevens
发明人： Roger E. Welser , Paul M. Deluca , Charles R. Lutz , Kevin S. Stevens
IPC分类号： H01L21/331 , H01L29/10 , H01L29/20 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L35/26
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/2003 , H01L29/7371
摘要： A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

86. 发明授权

US6096964A Quantum well thermoelectric material on thin flexible substrate 失效
标题翻译：量子阱热电材料在薄柔性基板上
公开(公告)号：US6096964A
公开(公告)日：2000-08-01
申请号：US192097
申请日：1998-11-13
申请人： Saeid Ghamaty , Norbert B. Elsner
发明人： Saeid Ghamaty , Norbert B. Elsner
IPC分类号： H01L35/22 , H01L35/26 , H01L35/00
CPC分类号： H01L35/22 , H01L35/26
摘要： Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin flexible substrate. The layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton.RTM.) coated with an even thinner film of crystalline silicon. The substrate is about 0.3 mills (127 microns) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton.RTM. substrate about 3,000 alternating layers of silicon and silicon-germanium, each layer being about 100 .ANG. and the total thickness of the layers being about 30 microns. Preferably, the silicon layer is applied in an amorphous form and heated to about 350.degree. C. to 375.degree. C. to crystallize it. In other preferred embodiments, the substrate material is thin films of other organic materials or thin films of inorganic materials such as silicon.
摘要翻译：用于热电装置的热电元件。热电元件具有非常大数量的沉积在非常薄的柔性基板上的半导体材料的交替层。半导体材料层在阻挡半导体材料和导电半导体材料之间交替，在导电半导体材料的薄层内产生量子阱。导电半导体材料被掺杂以产生导电性能。基材优选应非常薄，是具有良好热稳定性和强韧性的非常好的热和电绝缘体。在优选实施例中，薄有机基底是涂覆有更薄的晶体硅膜的薄聚酰亚胺膜（特别是Kapton TM）。基底厚度约为0.3毫米（127微米）。晶体硅层约0.1微米厚。该实施例包括在薄Kapton TM衬底的每一侧上约3,000个交替层的硅和硅 - 锗，每层约为100，层的总厚度为约30微米。优选地，将硅层以非晶形式施加并加热至约350℃至375℃以使其结晶。在其它优选实施例中，衬底材料是其它有机材料的薄膜或无机材料如硅的薄膜。

87. 发明授权

US5886390A Thermoelectric material with diffusion-preventive layer 失效
标题翻译：具有防扩散层的热电材料
公开(公告)号：US5886390A
公开(公告)日：1999-03-23
申请号：US893322
申请日：1997-07-16
申请人： Seiji Nishimoto , Taku Kitayama , Yoshikazu Fujisawa
发明人： Seiji Nishimoto , Taku Kitayama , Yoshikazu Fujisawa
IPC分类号： H01L35/14 , H01L35/16 , H01L35/22 , H01L35/26 , H01L31/058
CPC分类号： H01L35/22 , H01L35/16 , Y10S257/93
摘要： A thermoelectric material which exhibits a high thermoelectric performance even at high temperatures is shown and described. A thermoelectric material is provided with a plurality of conductive layers made of a first semiconductor only and a plurality of barrier layers made of a second semiconductor only, which are alternatingly arranged, a diffusion-preventive layer being interposed between neighboring conductive layers and barrier layers. Diffusion between the conductive layers and the barrier layers under high-temperature conditions is prevented, and the thermoelectric material maintains high performance standards at high temperatures.
摘要翻译：显示和描述了甚至在高温下表现出高热电性能的热电材料。热电材料设置有由第一半导体制成的多个导电层和由交替布置的第二半导体制成的多个阻挡层，隔离层插入在相邻的导电层和阻挡层之间。可以防止在高温条件下导电层和阻挡层之间的扩散，并且热电材料在高温下保持高的性能标准。

88. 发明授权

US5831294A Quantum box structure and carrier conductivity modulating device 失效
公开(公告)号：US5831294A
公开(公告)日：1998-11-03
申请号：US784411
申请日：1997-01-16
申请人： Ryuichi Ugajin
发明人： Ryuichi Ugajin
IPC分类号： H01L29/12 , H01L29/15 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L35/26
CPC分类号： B82Y10/00 , H01L29/127 , H01L29/158
摘要： A quantum box structure and a carrier conductivity modulating quantum device are disclosed. The quantum box structure comprises a quantum boxes array including a plurality of quantum boxes arranged adjacent to each other on a common plane. Each quantum box is asymmetric in a direction orthogonal to the plane in one of composition of materials constituting the quantum box and geometry of the quantum box. The carrier conductivity modulating quantum device comprises a plurality of regions including quantum boxes arrays including a plurality of quantum boxes arranged on a common plane. Each regions exhibits at least one of a metal phase and an insulator phase. Each quantum box is asymmetric in a direction orthogonal to the plane at least in one of composition of materials constituting the quantum box and geometry of the quantum box.

89. 发明授权

US3306784A Epitaxially bonded thermoelectric device and method of forming same 失效
标题翻译：外延键合热电元件及其形成方法
公开(公告)号：US3306784A
公开(公告)日：1967-02-28
申请号：US13141561
申请日：1961-08-14
申请人： GEN DYNAMICS CORP
发明人： ROES JOHN B
IPC分类号： H01L29/00 , H01L35/08 , H01L35/26
CPC分类号： H01L35/26 , H01L29/00 , H01L35/08 , Y10S428/926 , Y10S428/931 , Y10T428/12528 , Y10T428/12681 , Y10T428/12896 , Y10T428/1291

90. 发明授权

US11631795B2 Nanocomposite comprising semiconductor and metal nanoparticles, and assemblies 有权
公开(公告)号：US11631795B2
公开(公告)日：2023-04-18
申请号：US16486341
申请日：2018-02-16
申请人： Wake Forest University
发明人： David L. Carroll , Chaochao Dun , Corey Hewitt , Robert Summers
IPC分类号： B32B5/16 , B82Y30/00 , H01L35/26 , C01B19/00 , H01L35/34
摘要： Composite nanoparticle compositions and associated nanoparticle assemblies are described herein which, in some embodiments, exhibit enhancements to one or more thermoelectric properties including increases in electrical conductivity and/or Seebeck coefficient and/or decreases in thermal conductivity. In one aspect, a composite nanoparticle composition comprises a semiconductor nanoparticle including a front face and a back face and sidewalls extending between the front and back faces. Metallic nanoparticles are bonded to at least one of the sidewalls establishing a metal-semiconductor junction.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式