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81. 发明授权

US08148734B2 Light emitting device having a lateral passivation layer 有权
标题翻译：具有侧面钝化层的发光器件
公开(公告)号：US08148734B2
公开(公告)日：2012-04-03
申请号：US13241984
申请日：2011-09-23
申请人： Sun Kyung Kim
发明人： Sun Kyung Kim
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/44 , H01L33/22 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.
摘要翻译：提供了一种发光器件，发光器件封装和照明系统。发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，以及保护表面的钝化层的发光结构。钝化层包括在发光结构的顶表面上的第一钝化层和具有不同于第一钝化层的折射率的第二钝化层，第二钝化层设置在发光结构的侧表面上。第二钝化层的折射率大于第一钝化层的折射率。

82. 发明授权

US08124983B2 Power transistor 有权
标题翻译：功率晶体管
公开(公告)号：US08124983B2
公开(公告)日：2012-02-28
申请号：US12200224
申请日：2008-08-28
申请人： Ralf Otremba
发明人： Ralf Otremba
IPC分类号： H01L31/0312 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/7802 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7395 , H01L29/7397 , H01L29/7813 , H01L29/8083 , H01L2224/32245 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00
摘要： A power transistor includes a first terminal, a second terminal and a control terminal. A support layer is formed of a first material having a first bandgap. An active region is formed of a second material having a second bandgap wider than the first bandgap, and is disposed on the support layer. The active region is arranged to form part of a current path between the first and second terminal in a forward mode of operation. The active region includes at least one pn-junction.
摘要翻译：功率晶体管包括第一端子，第二端子和控制端子。支撑层由具有第一带隙的第一材料形成。有源区由具有比第一带隙宽的第二带隙的第二材料形成，并且设置在支撑层上。有源区域被布置成在正向操作模式中形成第一和第二端子之间的电流路径的一部分。有源区包括至少一个pn结。

83. 发明授权

US08115192B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08115192B2
公开(公告)日：2012-02-14
申请号：US12434056
申请日：2009-05-01
申请人： Katsufumi Kondo , Ryo Saeki
发明人： Katsufumi Kondo , Ryo Saeki
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/0079
摘要： A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm−3 or more and 3×1017 cm−3 or less.
摘要翻译：发光器件包括至少包括由Inx（Al y Ga 1-y）1-x P（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）构成的发光层的堆叠体，由Inx AlyGa1-y）1-xP（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）和由半导体制成的接合层; 以及在与结合层的接合界面处的晶格常数偏差大于发光层和接合层之间的晶格常数偏差的基板。 p型覆层与发光层的结合界面更远离，p型覆层的载流子浓度为0.5×10 17 cm -3以上3×1017cm -3以下。

84. 发明授权

US08101965B2 III-nitride semiconductor light emitting device having a multilayered pad 失效
标题翻译：具有多层衬垫的III族氮化物半导体发光器件
公开(公告)号：US08101965B2
公开(公告)日：2012-01-24
申请号：US12648707
申请日：2009-12-29
申请人： Chang Tae Kim , Hyun Su An , Hyun Suk Kim
发明人： Chang Tae Kim , Hyun Su An , Hyun Suk Kim
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24 , H01L27/15 , H01L29/18 , H01L31/12 , H01L29/26 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/44
摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，其包括：多个具有第一导电类型的第一III族氮化物半导体层的III族氮化物半导体层，具有第二导电类型的第二III族氮化物半导体层不同于第一导电类型的有源层，以及设置在第一III族氮化物半导体层和第二III族氮化物半导体层之间并通过电子和空穴的复合产生光的有源层; 电连接到所述多个III族氮化物半导体层的焊盘; 设置在所述接合焊盘上的保护膜; 以及设置在所述接合焊盘和所述保护膜之间并且被形成为暴露所述接合焊盘的缓冲焊盘。

85. 发明申请

US20110297968A1 Rod-shaped semiconductor device 有权
公开(公告)号：US20110297968A1
公开(公告)日：2011-12-08
申请号：US13136479
申请日：2011-08-02
申请人： Josuke Nakata
发明人： Josuke Nakata
IPC分类号： H01L31/167 , H01L33/20 , H01L31/0352 , H01L31/0336
CPC分类号： H01L31/035281 , H01L25/0756 , H01L33/20 , H01L33/38 , H01L33/44 , H01L2224/16145 , Y02E10/50
摘要： A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer.

86. 发明授权

US08044382B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08044382B2
公开(公告)日：2011-10-25
申请号：US12601794
申请日：2008-03-26
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L21/331 , H01L21/00
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，在氮化硅膜（3）发光。

87. 发明授权

US08004013B2 Polycrystalline thin film bipolar transistors 有权
标题翻译：多晶薄膜双极晶体管
公开(公告)号：US08004013B2
公开(公告)日：2011-08-23
申请号：US11763816
申请日：2007-06-15
申请人： Christopher J Petti , S. Brad Herner
发明人： Christopher J Petti , S. Brad Herner
IPC分类号： H01L31/0336 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7317 , G11C5/025 , G11C11/416 , H01L27/0688 , H01L27/1022 , H01L29/456 , H01L29/735
摘要： A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide is described. The emitter region and collector region also may comprise polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium silicide.
摘要翻译：一种半导体器件，包括具有基极区域，发射极区域和集电极区域的双极晶体管，其中所述基极区域包括通过使与硅化物，锗化物或硅化物锗化物接触的硅，锗或锗锗结晶而形成的多晶半导体材料。发射极区域和集电极区域还可以包括通过使硅，锗或锗锗与硅化物，锗化锗或锗化锗形成金属接触而形成的多晶半导体材料。多晶半导体材料优选为与C49相钛硅化物接触形成的硅化多晶硅。

88. 发明授权

US08003992B2 Light emitting diode having a wire grid polarizer 有权
标题翻译：具有线栅偏振器的发光二极管
公开(公告)号：US08003992B2
公开(公告)日：2011-08-23
申请号：US12457138
申请日：2009-06-02
申请人： Jun-youn Kim , Taek Kim , Kyoung-kook Kim
发明人： Jun-youn Kim , Taek Kim , Kyoung-kook Kim
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/227 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/075 , H01L31/109
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/46 , Y10S977/701 , Y10S977/762 , Y10S977/949
摘要： Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.
摘要翻译：示例性实施例提供了具有改进的偏振特性的发光二极管（LED）。 LED可以包括在发光单元上和下方的线栅偏振器。线栅偏振器可以彼此成一定角度布置。因此，由于LED可以在给定的偏振方向上发射光束，所以不需要昂贵的部件，例如双亮度增强膜（DBEF）。因此，可以减少包括LED的背光单元和包括背光单元的显示装置的制造成本。

89. 发明授权

US08003974B2 LED semiconductor element having increased luminance 有权
标题翻译： LED半导体元件具有增加的亮度
公开(公告)号：US08003974B2
公开(公告)日：2011-08-23
申请号：US12441758
申请日：2007-08-28
申请人： Peter Heidborn , Reiner Windisch , Ralph Wirth
发明人： Peter Heidborn , Reiner Windisch , Ralph Wirth
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/18 , H01L29/22
CPC分类号： H01L25/0756 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.
摘要翻译：一种LED半导体元件，具有至少一个第一辐射发生有源层和至少一个第二辐射产生有源层，该第一辐射产生有源层在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接。第一有源层和第二有源层通过接触区导电连接。

90. 发明授权

US07999250B2 Silicon-germanium-carbon semiconductor structure 有权
标题翻译：硅 - 锗 - 碳半导体结构
公开(公告)号：US07999250B2
公开(公告)日：2011-08-16
申请号：US12394285
申请日：2009-02-27
申请人： Bishnu Prasanna Gogoi , Robert Bruce Davies
发明人： Bishnu Prasanna Gogoi , Robert Bruce Davies
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/10 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/12
CPC分类号： H01L29/7811 , H01L21/2815 , H01L29/0653 , H01L29/0661 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/7802
摘要： In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor material over a portion the first semiconductor material, wherein the second semiconductor material comprises silicon-germanium-carbon (SiGeC) and wherein the first semiconductor material is a silicon epitaxial layer. The semiconductor structure further includes an active device, wherein a portion of the active device is formed in the second semiconductor material and a dielectric structure extending from the first surface of the first semiconductor material into the semiconductor substrate through the first semiconductor material.
摘要翻译：根据一个或多个实施例，半导体结构包括半导体衬底，半导体衬底上的第一半导体材料和第一半导体材料部分上的第二半导体材料，其中第二半导体材料包括硅 - 锗 - 碳（ SiGeC），并且其中所述第一半导体材料是硅外延层。半导体结构还包括有源器件，其中有源器件的一部分形成在第二半导体材料中，以及电介质结构，通过第一半导体材料从第一半导体材料的第一表面延伸到半导体衬底中。

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