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81. 发明授权

US09676227B2 Wet-etchable, sacrificial liftoff layer compatible with high temperature processing 有权
公开(公告)号：US09676227B2
公开(公告)日：2017-06-13
申请号：US14201009
申请日：2014-03-07
申请人： Jesse A. Frantz , Jason D. Myers , Robel Y. Bekele , Jasbinder S. Sanghera
发明人： Jesse A. Frantz , Jason D. Myers , Robel Y. Bekele , Jasbinder S. Sanghera
IPC分类号： B44C1/22 , H01L31/0392 , H01L31/18 , H01L21/02
CPC分类号： B44C1/227 , H01L21/02002 , H01L31/03928 , H01L31/1896 , Y02E10/541
摘要： A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.

82. 发明授权

US09673057B2 Method for forming stair-step structures 有权
公开(公告)号：US09673057B2
公开(公告)日：2017-06-06
申请号：US14665815
申请日：2015-03-23
申请人： Lam Research Corporation
发明人： In Deog Bae , Qian Fu
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C03C1/00 , H01L39/24 , H01L21/3065 , H01L21/306 , H01L27/11556 , H01L27/11582 , H01L21/3105 , H01L27/11548 , H01L27/11573
CPC分类号： H01L21/31116 , H01L21/30604 , H01L21/30655 , H01L21/31055 , H01L21/31138 , H01L21/31144 , H01L27/11548 , H01L27/11556 , H01L27/11573 , H01L27/11582 , H01L39/247 , H01L2224/11916
摘要： A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times.

83. 发明申请

US20170136806A1 METHOD AND SYSTEM FOR MASS PRODUCTION OF CUSTOMIZED ENGRAVED PRODUCTS 审中-公开
公开(公告)号：US20170136806A1
公开(公告)日：2017-05-18
申请号：US15420761
申请日：2017-01-31
申请人： Cimpress Schweiz GmbH
发明人： John C. Marcos , Michael Kiy , Marcel Gerber , Edwin Sanders , Mark Hodak , Kristin R. Frias
IPC分类号： B44B3/00 , G05B17/02 , B44C1/22
CPC分类号： B44B3/009 , B44B3/006 , B44C1/225 , B44C1/228 , G05B17/02 , Y10T409/30112
摘要： Systems and methods for mass producing customized engraved articles of manufacture based on orders from multiple different customers.

84. 发明授权

US09620458B2 Photolithography alignment mark structures, semiconductor structures, and fabrication method thereof 有权
公开(公告)号：US09620458B2
公开(公告)日：2017-04-11
申请号：US14861591
申请日：2015-09-22
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Boxiu Cai , Yi Huang
IPC分类号： B44C1/22 , H01L23/544 , G02B5/18 , H01L21/3065 , H01L21/308 , G03F7/20
CPC分类号： H01L23/544 , G02B5/1819 , G02B5/1823 , G02B5/1857 , G02B27/4255 , G03F7/20 , G03F9/7076 , G03F9/708 , H01L21/3065 , H01L21/3085 , H01L21/3086 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; thrilling a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center along a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.

85. 发明授权

US09607811B2 Workpiece processing method 有权
公开(公告)号：US09607811B2
公开(公告)日：2017-03-28
申请号：US14866467
申请日：2015-09-25
申请人： TOKYO ELECTRON LIMITED
发明人： Yoshihide Kihara , Toru Hisamatsu , Masanobu Honda
IPC分类号： H01L21/3065 , B44C1/22 , H01J37/32 , H01L21/02 , H01L21/033
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/32532 , H01L21/02164 , H01L21/02258 , H01L21/02274 , H01L21/0337
摘要： Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container. In the processing method, a sequence including the first to fourth processes is repeated.

86. 发明申请

US20170057276A1 PANEL WITH RUSTIC CHAMFER AND METHOD FOR PRODUCING SAID PANEL 审中-公开
标题翻译：具有榫槽的面板和用于生产面板的方法
公开(公告)号：US20170057276A1
公开(公告)日：2017-03-02
申请号：US15307659
申请日：2015-05-06
申请人： Kaindl Flooring GmbH
发明人： Gerhard Dürnberger , Andreas Wallinger , Rupert Krallinger
IPC分类号： B44C1/22 , B23C3/12
CPC分类号： B44C1/22 , B23C3/12 , B23C2220/16 , B44C1/222 , B44C5/04 , E04F15/02033
摘要： A panel for cladding a substrate and a method for producing same, in which a plurality of indentations, which start from the visible surface, extend so as to be inclined (α, β) relative to the visible surface and end in respective side surface, are formed at the transition from the visible surface into at least one of the side surfaces to form a chamfer. A The chamfer is formed solely by the plurality of indentations, which include at least a first group of indentations all of which extend in an inclined manner relative to the visible surface at a first inclination angle (α), and a second group of indentations all of which extend in an inclined manner relative to the visible surface at a second inclination angle (β), the first inclination angle (α) and the second inclination angle (β) different from each other.
摘要翻译：用于包覆基板的面板及其制造方法，其中从可见表面开始的多个凹痕相对于可见表面倾斜（α，β）并且在相应的侧表面中的端部延伸，形成在从可见表面到至少一个侧表面的过渡处以形成倒角。 A倒角仅由多个凹口形成，其包括至少第一组凹口，其全部都以相对于可见表面倾斜的方式以第一倾斜角度（α）延伸，并且第二组凹口全部其以相对于可见表面倾斜的方式以第二倾斜角（β）延伸，第一倾斜角（α）和第二倾斜角（β）彼此不同。

87. 发明授权

US09575215B2 Method for making light blocking plate 有权
标题翻译：遮光板的制作方法
公开(公告)号：US09575215B2
公开(公告)日：2017-02-21
申请号：US13873161
申请日：2013-04-29
申请人： Shao-Kai Pei
发明人： Shao-Kai Pei
IPC分类号： B29D11/00 , B44C1/22 , B05D5/06 , G02B27/00 , G02B1/10 , G02B5/00 , G02B5/20
CPC分类号： G02B1/10 , G02B5/005 , G02B5/208 , G02B27/0018 , H01J2329/869
摘要： An exemplary method for making a light blocking plate includes the steps of providing a flat plate-like light pervious member; forming a plurality of spaced ceramic power layers on the light pervious member; forming a light blocking layer over the light pervious member and side faces of the ceramic power layers; forming an electromagnetic shielding layer over the light blocking layer; removing top portions of the ceramic power layers with remaining portions of the ceramic power layers thus exposed; and removing the remaining portions of the ceramic power layers.
摘要翻译：制造遮光板的示例性方法包括提供平板状透光构件的步骤; 在透光构件上形成多个隔开的陶瓷功率层; 在所述透光构件和所述陶瓷功率层的侧面上形成遮光层; 在所述遮光层上形成电磁屏蔽层; 从而暴露陶瓷功率层的剩余部分去除陶瓷功率层的顶部; 并且去除陶瓷功率层的剩余部分。

88. 发明授权

US09570099B2 Magnetoresistive devices and methods for manufacturing magnetoresistive devices 有权
标题翻译：磁阻器件及制造磁阻器件的方法
公开(公告)号：US09570099B2
公开(公告)日：2017-02-14
申请号：US14717213
申请日：2015-05-20
申请人： Infineon Technologies AG
发明人： Wolfgang Raberg , Andreas Strasser , Hermann Wendt , Klemens Pruegl
IPC分类号： B44C1/22 , G11B5/39
CPC分类号： G11B5/3903 , G01R33/09 , G11B5/3909 , G11B2005/3996
摘要： A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL and a portion of the magnetoresistive stack. The method can further include depositing a photoresist layer on the hard mask before the first etching process and removing the photoresist layer from the hard mask following the first etching process. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
摘要翻译：可以包括磁阻堆叠和设置在磁阻堆叠上的蚀刻停止层（ESL）的磁阻器件。制造磁阻器件的方法可以包括：在衬底上沉积磁阻堆叠，ESL和掩模层; 执行第一蚀刻工艺以蚀刻掩模层的一部分以暴露ESL的一部分; 以及执行第二蚀刻工艺以蚀刻ESL的暴露部分和磁阻堆叠的一部分。该方法还可以包括在第一蚀刻工艺之前在硬掩模上沉积光致抗蚀剂层，并且在第一蚀刻工艺之后从硬掩模中除去光致抗蚀剂层。第一和第二蚀刻工艺可以不同。例如，第一蚀刻工艺可以是反应性蚀刻工艺，第二蚀刻工艺可以是非反应性蚀刻工艺。

89. 发明授权

US09548211B2 Method to selectively polish silicon carbide films 有权
标题翻译：选择性抛光碳化硅膜的方法
公开(公告)号：US09548211B2
公开(公告)日：2017-01-17
申请号：US12630288
申请日：2009-12-03
申请人： William Ward , Timothy Johns
发明人： William Ward , Timothy Johns
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C23F1/00 , C03C15/00 , C03C25/68 , H01L21/3105 , H01L21/321 , C09G1/02 , H01L29/16
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212 , H01L29/1608
摘要： The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method comprises abrading a surface of substrate with a polishing composition that comprises a particulate abrasive, at least one acidic buffering agent, and an aqueous carrier.
摘要翻译：本发明提供了一种从二氧化硅中优先选择性除去碳化硅表面的方法。该方法包括用包含微粒磨料，至少一种酸性缓冲剂和水性载体的抛光组合物研磨衬底的表面。

90. 发明授权

US09548207B2 Method of etching a silicon substrate 有权
标题翻译：蚀刻硅衬底的方法
公开(公告)号：US09548207B2
公开(公告)日：2017-01-17
申请号：US14322235
申请日：2014-07-02
申请人： CANON KABUSHIKI KAISHA
发明人： Yoshinao Ogata , Masataka Kato , Masaya Uyama
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/3065 , H01L21/30655 , H01L21/311 , H01L21/31105 , H01L21/31111
摘要： A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in plasma, the method including introducing a rare gas into a reaction system to ionize the rare gas.
摘要翻译：一种蚀刻硅衬底的方法，其中通过用等离子体中产生的离子蚀刻硅衬底的第一表面形成凹陷部分，所述方法包括将稀有气体引入反应系统以电离稀有气体。

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