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81. 发明授权

US09305953B2 Imaging device and imaging system 有权
标题翻译：成像设备和成像系统
公开(公告)号：US09305953B2
公开(公告)日：2016-04-05
申请号：US14579969
申请日：2014-12-22
申请人： CANON KABUSHIKI KAISHA
发明人： Kentarou Suzuki , Tomoyuki Tezuka
IPC分类号： H04N5/335 , H01L27/146 , H04N5/369 , H04N5/225
CPC分类号： H01L27/14623 , H01L27/14607 , H01L27/14636 , H04N5/2254 , H04N5/369
摘要： An imaging device includes a light-sensing pixel region; a first pixel region; a second pixel region; a first wiring layer disposed above the light-sensing pixel region; and a second wiring layer disposed above the topmost wiring layer of the wiring layer disposed above the light-sensing pixel region, above the second pixel region. The first pixel region is disposed between the light-sensing pixel region and the second pixel region, adjacent to the light-sensing pixel region and the second pixel region, wherein the first pixel region overlaps, in plan view, a first shielding portion included in the first wiring layer. The second pixel region overlaps, in plan view, a second shielding portion included in the second wiring layer. An electroconductive pattern is formed at the first wiring layer at a position overlapping the second pixel region in plan view.
摘要翻译：一种成像装置包括一个感光像素区域; 第一像素区域; 第二像素区域; 设置在感光像素区域上方的第一布线层; 以及第二布线层，其布置在布置在所述第二像素区域上方的所述光感测像素区域上方的所述布线层的最上布线层的上方。第一像素区域设置在与感光像素区域和第二像素区域相邻的光感测像素区域和第二像素区域之间，其中第一像素区域在平面图中与第一像素区域重叠，第一屏蔽部分包括在第一布线层。第二像素区域在平面图中与包括在第二布线层中的第二屏蔽部分重叠。在平面图中与第二像素区域重叠的位置处，在第一布线层处形成导电图案。

82. 发明授权

US09299732B2 Stacked chip SPAD image sensor 有权
标题翻译：堆叠芯片SPAD图像传感器
公开(公告)号：US09299732B2
公开(公告)日：2016-03-29
申请号：US14065275
申请日：2013-10-28
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Eric A. G. Webster , Tiejun Dai
IPC分类号： H01J40/14 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14634 , H01L27/1464 , H01L27/14643 , H04N5/369 , H04N5/37455 , H04N5/378
摘要： An example imaging sensor system includes a Single-Photon Avalanche Diode (SPAD) imaging array formed in a first semiconductor layer of a first wafer. The SPAD imaging array includes an N number of pixels, each including a SPAD region formed in a front side of the first semiconductor layer. The first wafer is bonded to a second wafer at a bonding interface between a first interconnect layer of the first wafer and the second interconnect layer of the second wafer. An N number of digital counters are formed in a second semiconductor layer of the second wafer. Each of the digital counters are configured to count output pulses generated by a respective SPAD region.
摘要翻译：示例性成像传感器系统包括形成在第一晶片的第一半导体层中的单光子雪崩二极管（SPAD）成像阵列。 SPAD成像阵列包括N个像素，每个像素包括形成在第一半导体层的前侧的SPAD区域。第一晶片在第一晶片的第一互连层和第二晶片的第二互连层之间的接合界面处接合到第二晶片。 N个数字计数器形成在第二晶片的第二半导体层中。每个数字计数器被配置为对相应SPAD区域产生的输出脉冲进行计数。

83. 发明申请

US20160050377A1 ACTIVE PIXEL SENSORS AND IMAGE DEVICES HAVING STACKED PIXEL STRUCTURE SUPPORTING GLOBAL SHUTTER 审中-公开
标题翻译：有源像素传感器和具有支持全球快门的堆叠像素结构的图像设备
公开(公告)号：US20160050377A1
公开(公告)日：2016-02-18
申请号：US14457490
申请日：2014-08-12
申请人： Samsung Electronics Co., Ltd.
发明人： Uzi HIZI , Mickey BAHAR , Yoel YAFFE
IPC分类号： H04N5/369 , H04N5/374 , H04N5/353
CPC分类号： H04N5/3696 , H04N5/353 , H04N5/3532 , H04N5/369 , H04N5/37457
摘要： A global shutter pixel has a stacked pixel structure. The pixel includes a sample and readout circuit on a lower substrate and a photodiode and transfer circuit on an upper substrate. The sample and readout circuit is configured to store accumulated charge and output a pixel data signal corresponding to the stored accumulated charge. The photodiode and transfer circuit is configured to accumulate charge in response to incident light, and to transfer the accumulated charge to the sample and readout circuit, the upper substrate being stacked on the lower substrate.
摘要翻译：全局快门像素具有堆叠像素结构。像素包括下基板上的采样和读出电路，以及上基板上的光电二极管和传输电路。采样和读出电路被配置为存储累积的电荷并输出与所存储的累积电荷相对应的像素数据信号。光电二极管和转移电路被配置为响应于入射光而蓄积电荷，并且将累积的电荷传送到样品和读出电路，上基板堆叠在下基板上。

84. 发明授权

US09258497B2 Correction image creation device, radiographic imaging device, imaging device, computer readable medium and correction image creation method 有权
标题翻译：校正图像创建装置，放射线照相成像装置，成像装置，计算机可读介质和校正图像创建方法
公开(公告)号：US09258497B2
公开(公告)日：2016-02-09
申请号：US14293697
申请日：2014-06-02
申请人： FUJIFILM Corporation
发明人： Tetsuya Tsuji
IPC分类号： H04N5/30 , H04N5/357 , H04N5/369 , G01T1/164 , G01T1/20 , G01T1/17 , A61B6/00 , G01N23/04 , H04N5/32 , G06T5/00 , G06T5/40 , G06F19/00
CPC分类号： G06T5/002 , A61B6/4233 , A61B6/4283 , A61B6/44 , A61B6/4464 , A61B6/5258 , A61B6/5264 , G01N23/04 , G01T1/1647 , G01T1/17 , G01T1/20 , G06F19/321 , G06T5/40 , G06T5/50 , G06T7/0014 , G06T2207/10116 , G06T2207/20012 , G06T2207/20182 , G16H30/20 , H04N5/32 , H04N5/357 , H04N5/369
摘要： A correction image creation device includes: an acquisition unit that acquires at least one original image, which is a basis when creating a correction image used in offset correction with respect to an image that has been obtained by imaging; a determination unit that determines whether or not noise from the exterior is superimposed on the original image; and a cancellation unit that cancels creation of the correction image in a case in which it has been determined by the determination unit that noise from the exterior is superimposed on the original image.
摘要翻译：校正图像创建装置包括：获取单元，其获取至少一个原始图像，所述至少一个原始图像是创建关于通过成像获得的图像的偏移校正中使用的校正图像的基础; 确定单元，确定来自外部的噪声是否叠加在原始图像上; 以及取消单元，其在由所述确定单元确定来自外部的噪声叠加在原始图像上的情况下，取消校正图像的创建。

85. 发明申请

US20160027835A1 IMAGING DEVICE, CONTROL METHOD OF IMAGING DEVICE, AND PIXEL STRUCTURE 有权
标题翻译：成像装置，成像装置的控制方法和像素结构
公开(公告)号：US20160027835A1
公开(公告)日：2016-01-28
申请号：US14788991
申请日：2015-07-01
申请人： Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Hyogo , Yasukazu Nakatani , Katsuyuki Sakurano
发明人： Kazuhiro Yoneda , Hirofumi Watanabe , Takaaki Negoro , Katsuhiko Hyogo , Yasukazu Nakatani , Katsuyuki Sakurano
IPC分类号： H01L27/146 , H04N5/341 , H04N3/14
CPC分类号： H04N5/369 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14638 , H01L27/14643
摘要： An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.
摘要翻译：公开了一种在像素的光电检测器中具有光电晶体管的成像装置。成像装置包括被配置为分离像素的植入电极，设置在与植入电极相邻的位置处的第一发射体和布置成使得从注入电极到第二发射体的距离比距离植入电极植入电极到第一发射极。

86. 发明申请

US20160014361A1 CORRELATED MULTIPLE SAMPLING CMOS IMAGE SENSOR 有权
标题翻译：相关多采样CMOS图像传感器
公开(公告)号：US20160014361A1
公开(公告)日：2016-01-14
申请号：US14755806
申请日：2015-06-30
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： Assim Boukhayma
IPC分类号： H04N5/374 , H04N5/357 , H04N5/355 , H04N5/369 , H04N5/3745
CPC分类号： H04N5/374 , H04N5/3559 , H04N5/357 , H04N5/3575 , H04N5/369 , H04N5/3745 , H04N5/378
摘要： A CMOS image sensor including at least one pixel and one circuit arranged to receive, on a first node of the circuit, an analog signal representative of the luminosity level received by the pixel, the circuit being capable of successively acquiring 2n samples of said signal, n being an integer greater than or equal to 1, and of delivering, on a second node of the circuit, an analog signal having a value equal to the average of the values of said samples, without generating an intermediate signal having a value greater than the value of the largest acquired sample.
摘要翻译：一种CMOS图像传感器，包括至少一个像素和一个电路，其布置成在电路的第一节点上接收表示由像素接收的亮度等级的模拟信号，所述电路能够连续地获取所述信号的2n个样本， n是大于或等于1的整数，并且在电路的第二节点上传送具有等于所述样本的值的平均值的模拟信号，而不产生具有大于最大收购样本的价值。

87. 发明申请

US20150380454A1 CAMERA MODULE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：相机模块及其制造方法
公开(公告)号：US20150380454A1
公开(公告)日：2015-12-31
申请号：US14750859
申请日：2015-06-25
申请人： STMicroelectronics (Shenzhen) R&D Co. Ltd
发明人： Jing-En Luan
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/14685 , H01L24/97 , H01L27/14618 , H01L2224/16225 , H01L2224/48095 , H01L2224/48227 , H04N5/2257 , H04N5/369
摘要： Embodiments of the present invention provide a camera module and a method of manufacturing the same, the camera module comprising a sensor assembly, at least one semiconductor substrate, and a molding compound; wherein the sensor assembly comprises a semiconductor die, a sensor circuit disposed on the top surface of the semiconductor die, and a transparent cover coupled to the semiconductor die over the top surface of the semiconductor die; wherein each semiconductor substrate is disposed around the sensor assembly in a horizontal direction; and wherein the molding compound is filled between each semiconductor substrate and the sensor assembly.
摘要翻译：本发明的实施例提供了一种相机模块及其制造方法，所述相机模块包括传感器组件，至少一个半导体衬底和模塑料; 其中所述传感器组件包括半导体管芯，设置在所述半导体管芯的顶表面上的传感器电路以及在所述半导体管芯的顶表面上连接到所述半导体管芯的透明盖; 其中每个半导体衬底沿水平方向设置在所述传感器组件周围; 并且其中所述模制化合物填充在每个半导体衬底和所述传感器组件之间。

88. 发明申请

US20150377700A1 PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM HAVING PHOTOELECTRIC CONVERSION APPARATUS 审中-公开
标题翻译：具有光电转换装置的光电转换装置和图像拾取系统
公开(公告)号：US20150377700A1
公开(公告)日：2015-12-31
申请号：US14843847
申请日：2015-09-02
申请人： CANON KABUSHIKI KAISHA
发明人： Mineo Shimotsusa , Koichiro Iwata
IPC分类号： G01J1/44 , H01L27/146
CPC分类号： G01J1/44 , H01L27/14601 , H04N5/33 , H04N5/369 , H04N5/378
摘要： A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.
摘要翻译：根据本发明的一个方面的光电转换装置包括：第一基板，包括光电转换区域和周围区域;以及第二基板，包括用于处理来自光电转换区域的信号的电路，并与第一基板重叠。在这种情况下，用于处理来自光电转换区域的信号的电路包括具有比第一电路的驱动频率更高的驱动频率的第一电路和第二电路。在正交投影中，第二电路仅设置在光电转换区域中。

89. 发明授权

US09215388B2 Solid-state imaging element and electronic apparatus 有权
标题翻译：固态成像元件和电子设备
公开(公告)号：US09215388B2
公开(公告)日：2015-12-15
申请号：US14489156
申请日：2014-09-17
申请人： Sony Corporation
发明人： Kazuichiro Itonaga
IPC分类号： H01L27/00 , H04N5/369 , H01L31/0203 , H01L27/146
CPC分类号： H04N5/369 , H01L27/14618 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a solid-state imaging element includes: manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side; preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which the periphery of the opening is shaped as a flat surface; expanding the base by heating, mounting the element chip on the flat surface of the base in a state where the opening of the base is covered; and three-dimensionally curving a portion corresponding to the opening in the element chip by cooling and contracting the base in a state where the element chip is fixed to the flat surface of the expanded base.
摘要翻译：制造固态成像元件的方法包括：制造其中光电转换单元布置在主表面侧上的元件芯片; 准备使用具有大于元件芯片的膨胀系数的材料构成的基部，并且开口的开口被形成为平坦表面; 通过加热来膨胀基座，在基部的开口被覆盖的状态下将元件芯片安装在基座的平坦表面上; 并且在元件芯片被固定到扩展基座的平坦表面的状态下通过冷却和收缩基座来三维地弯曲与元件芯片中的开口相对应的部分。

90. 发明授权

US09190435B2 Shared active pixel sensor 有权
标题翻译：共享有源像素传感器
公开(公告)号：US09190435B2
公开(公告)日：2015-11-17
申请号：US14201913
申请日：2014-03-09
申请人： Himax Imaging Limited
发明人： Dong-Long Lin , Chung-Ren Li , Chung-Wei Chang
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14603 , H01L27/14612 , H01L27/14641 , H01L27/14643 , H04N5/369 , H04N5/378
摘要： A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at least a first signal node and a second signal node. A shared sense node electrically connected to the shared photodiode. A transfer gate disposed between the first signal node and the shared sense node to control the first signal node and the shared sense node. A shared reset gate is electrically connected to the shared sense node and a shared source follower gate reads a photocurrent from the shared photodiode.
摘要翻译：公开了一种具有共享光电二极管的共享有源像素传感器，共享感测节点，传输门，共享复位门和共享源极跟随器门。共享光电二极管包括至少第一信号节点和第二信号节点。电连接到共享光电二极管的共享感测节点。设置在所述第一信号节点和所述共享感测节点之间的传送门控制所述第一信号节点和所述共享感测节点。共享复位栅极电连接到共享感测节点，共享源极跟随器门从共享光电二极管读取光电流。

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