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81. 发明申请

US20110163342A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110163342A1
公开(公告)日：2011-07-07
申请号：US13049683
申请日：2011-03-16
申请人： Kyung Jun KIM , Hyo Kun Son
发明人： Kyung Jun KIM , Hyo Kun Son
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/405
摘要： A light emitting device including a second metal layer, a second conduction type semiconductor layer on the second metal layer, an active layer on the second conduction type semiconductor layer, a first conduction type semiconductor layer on the active layer, a first metal layer on the first conduction type semiconductor layer, an insulating layer being disposed on a peripheral portion of an upper surface of the second metal layer and being disposed under a lower surface of the second conduction type semiconductor layer, and a passivation layer on lateral surfaces of the insulating layer, the second conduction type semiconductor layer, the active layer and the first conduction type semiconductor layer, the passivation layer being on an upper surface of the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer.
摘要翻译：一种发光器件，包括第二金属层，第二金属层上的第二导电类型半导体层，第二导电型半导体层上的有源层，有源层上的第一导电类型半导体层，第一金属层第一导电型半导体层，绝缘层设置在第二金属层的上表面的周边部分并且设置在第二导电类型半导体层的下表面下方，以及绝缘层的侧表面上的钝化层所述第二导电类型半导体层，所述有源层和所述第一导电类型半导体层，所述钝化层位于所述第二金属层的上表面上，其中所述绝缘层的侧表面与所述第二导电类型半导体层的侧表面相邻，金属层。

82. 发明申请

US20110121265A1 GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译： III类氮化物半导体光学器件
公开(公告)号：US20110121265A1
公开(公告)日：2011-05-26
申请号：US13055690
申请日：2010-02-26
申请人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
发明人： Masaki Ueno , Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Katsushi Akita , Takamichi Sumitomo , Masahiro Adachi , Shinji Tokuyama
IPC分类号： H01L29/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01L33/325 , H01S5/3202
摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.
摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。主表面13a具有半极性。活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

83. 发明授权

US07888693B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07888693B2
公开(公告)日：2011-02-15
申请号：US12659208
申请日：2010-03-01
申请人： Tae Yun Kim , Hyo Kun Son
发明人： Tae Yun Kim , Hyo Kun Son
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/06 , H01L21/02584 , H01L33/007 , H01L33/04 , H01L33/08 , H01L33/32 , H01L33/325
摘要： Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 有源层上的未掺杂的半导体层; 在未掺杂半导体层上的第一δ掺杂层; 以及在第一δ掺杂层上的第二导电类型半导体层。

84. 发明申请

US20110003463A1 DOPING METHOD 失效
标题翻译：掺杂方法
公开(公告)号：US20110003463A1
公开(公告)日：2011-01-06
申请号：US12819935
申请日：2010-06-21
申请人： Deodatta Vinayak SHENAI-KHATKHATE
发明人： Deodatta Vinayak SHENAI-KHATKHATE
IPC分类号： H01L21/20
CPC分类号： H01L33/325 , H01L21/02538 , H01L21/02576 , H01L21/0262 , H01L33/305
摘要： Methods of doping a III-V compound semiconductor film are disclosed.
摘要翻译：公开了掺杂III-V族化合物半导体膜的方法。

85. 发明授权

US07863638B2 Diode having vertical structure and method of manufacturing the same 有权
公开(公告)号：US07863638B2
公开(公告)日：2011-01-04
申请号：US12654894
申请日：2010-01-07
申请人： Myung Cheol Yoo
发明人： Myung Cheol Yoo
IPC分类号： H01L33/00
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/62 , H01S5/3013
摘要： A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

86. 发明申请

US20100314607A1 DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有垂直结构的二极管及其制造方法
公开(公告)号：US20100314607A1
公开(公告)日：2010-12-16
申请号：US12840840
申请日：2010-07-21
申请人： Myung Cheol Yoo
发明人： Myung Cheol Yoo
IPC分类号： H01L33/04 , H01L33/10
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/62 , H01S5/3013
摘要： A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
摘要翻译：发光二极管包括导电层，导电层上的n-GaN层，n-GaN层上的有源层，有源层上的p-GaN层和p-GaN层上的p电极。导电层是n电极。

87. 发明申请

US20100267221A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE USING THE SAME 审中-公开
标题翻译： III类氮化物半导体器件和使用其的发光器件
公开(公告)号：US20100267221A1
公开(公告)日：2010-10-21
申请号：US12827890
申请日：2010-06-30
申请人： Tetsuo SAKURAI
发明人： Tetsuo SAKURAI
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02614 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L33/325
摘要： A Group III nitride semiconductor device and method for producing the same. The device includes a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate. A first layer which is in contact with the substrate is composed of AlxGa1-x N (0≦x≦1), and the difference in height between a protrusion and a depression which are present at the interface between the first layer and a second layer provided thereon is 10 nm or more and is equal to, or less than, 99% the thickness of the first layer. The method includes a first step of depositing on a substrate, a layer containing fine Group III metal particles containing silicon; a second step of nitridizing the fine particles in an atmosphere containing a nitrogen source; and a third step of growing a Group III nitride semiconductor single crystal on the thus-nitridized fine particles.
摘要翻译：一种III族氮化物半导体器件及其制造方法。该器件包括衬底和设置在衬底上的多个III族氮化物半导体层。与基板接触的第一层由Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）构成，并且存在于第一层与第二层之间的界面处的突起与凹陷之间的高度差其上设置有10nm以上且等于或小于第一层的厚度的99％。该方法包括沉积在基底上的第一步骤，包含含有硅的细小的III族金属颗粒; 在含氮源的气氛中氮化微粒子的第二步骤; 以及在这样的氮化微粒上生长III族氮化物半导体单晶的第三步骤。

88. 发明申请

US20100244052A1 HIGH OUTPUT GROUP III NITRIDE LIGHT EMITTING DIODES 有权
标题翻译：高输出组III氮化物发光二极管
公开(公告)号：US20100244052A1
公开(公告)日：2010-09-30
申请号：US12796365
申请日：2010-06-08
申请人： John Adam Edmond , Michael J. Bergmann , David T. Emerson , Kevin Ward Haberern
发明人： John Adam Edmond , Michael J. Bergmann , David T. Emerson , Kevin Ward Haberern
IPC分类号： H01L33/02 , H01L33/12
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
摘要翻译：公开了一种发光二极管，其包括碳化硅衬底和由衬底上的III族氮化物材料体系形成的发光结构。该二极管具有大于100,000平方微米的面积，其在20毫安电流下的辐射通量为至少29毫瓦，其主波长为390至540纳米。

89. 发明申请

US20100224855A1 Light-emitting device epitaxial wafer and light-emitting device 有权
标题翻译：发光元件外延片和发光元件
公开(公告)号：US20100224855A1
公开(公告)日：2010-09-09
申请号：US12656674
申请日：2010-02-12
申请人： Takashi Takeuchi , Taichiroo Konnno
发明人： Takashi Takeuchi , Taichiroo Konnno
IPC分类号： H01L33/00
CPC分类号： H01L33/325 , H01L33/025
摘要： A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.
摘要翻译：发光器件外延晶片包括n型衬底，堆叠在n型衬底上的n型覆层，包括堆叠在n型覆层上的量子阱结构的发光层和p型型覆盖层堆叠在发光层上。 n型包覆层包括掺杂有2种以上的包含Si的n型掺杂剂的混合物的外延层，并且厚度不小于250nm且不大于750nm。或者，发光装置外延晶片包括n型衬底，堆叠在n型衬底上的n型覆层，堆叠在n型覆层上的发光层和p型覆层层叠在发光层上。 n型包覆层包含2种以上含有Si的n型杂质。

90. 发明申请

US20100109020A1 Diode having vertical structure and method of manufacturing the same 有权
公开(公告)号：US20100109020A1
公开(公告)日：2010-05-06
申请号：US12654894
申请日：2010-01-07
申请人： Myung Cheol Yoo
发明人： Myung Cheol Yoo
IPC分类号： H01L31/0256 , H01L33/00
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/62 , H01S5/3013
摘要： A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

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