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81. 发明申请

US20070200971A1 Electro-optical device, light receiving device, and electronic apparatus 有权
标题翻译：电光装置，光接收装置和电子装置
公开(公告)号：US20070200971A1
公开(公告)日：2007-08-30
申请号：US11704196
申请日：2007-02-09
申请人： Shin Koide , Hiroko Muramatsu , Shin Fujita
发明人： Shin Koide , Hiroko Muramatsu , Shin Fujita
IPC分类号： G02F1/1335
CPC分类号： G02F1/13318 , G02F1/133553 , G02F1/1362 , G02F2001/133612 , H01L27/14 , H01L31/153
摘要： An electro-optical device includes a transparent substrate, a PIN type diode formed in the transparent substrate and receiving light introduced through a light receiving side surface of the transparent substrate, and a reflecting portion provided on a surface side opposite to the light receiving side surface of the transparent substrate and for reflecting light passed through the transparent substrate to the PIN type diode.
摘要翻译：电光装置包括透明基板，形成在透明基板中的PIN型二极管，并且接收通过透光基板的受光侧表面引入的光;以及反射部，设置在与受光侧面相反的表面侧并且将通过透明基板的光反射到PIN型二极管。

82. 发明申请

US20070138951A1 Photo sensor and organic light-emitting display using the same 有权
标题翻译：照片传感器和有机发光显示器使用相同
公开(公告)号：US20070138951A1
公开(公告)日：2007-06-21
申请号：US11641842
申请日：2006-12-20
申请人： Hye Park , Byoung Choi , Sun Yang , Youn Oh , Eun Lee , Won Kang
发明人： Hye Park , Byoung Choi , Sun Yang , Youn Oh , Eun Lee , Won Kang
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/144 , H01L27/3269 , H01L31/145 , H01L31/153 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.
摘要翻译：有机发光显示器包括基板，基板上的薄膜晶体管，与薄膜晶体管电连接的有机发光二极管和具有并联连接的多个光电二极管的光电传感器。

83. 发明申请

US20060197009A1 Image detection and readout apparatus 失效
标题翻译：图像检测和读出装置
公开(公告)号：US20060197009A1
公开(公告)日：2006-09-07
申请号：US11366550
申请日：2006-03-03
申请人： Akira Yamaguchi
发明人： Akira Yamaguchi
IPC分类号： H01L31/00
CPC分类号： H01L27/14665 , H01L27/15 , H01L31/153
摘要： An image detection and readout apparatus constituted by a solid state detector constructed to generate electrical currents according to the electrostatic latent image when scanned by readout light, a surface light source for scanning the solid state radiation detector by the readout light, and a light source control means for controlling the surface light source. The stripe electrode of the solid state detector is divided into two sections at the center in the length direction of the elements of the stripe electrode to form two readout regions in order to reduce the capacitance component between the adjacent elements, as well as the resistance component of the elements. In addition, the light source control means is configured to control the surface light source to cause the scanning to be performed by the surface light source in parallel simultaneously for the readout regions.
摘要翻译：一种由固体检测器构成的图像检测和读出装置，其被构造成当通过读出光扫描时根据静电潜像产生电流;用于通过读出光扫描固态放射线检测器的表面光源;以及光源控制用于控制表面光源的装置。固体检测器的条状电极在条形电极的元件的长度方向的中心被分成两部分，以形成两个读出区域，以便减小相邻元件之间的电容分量，以及电阻分量的元素。此外，光源控制装置被配置为控制表面光源，以使得对于读出区域同时并行地对面光源执行扫描。

84. 发明申请

US20050218820A1 Self light emitting device and method of driving thereof 有权
公开(公告)号：US20050218820A1
公开(公告)日：2005-10-06
申请号：US11140735
申请日：2005-06-01
申请人： Yoshifumi Tanada
发明人： Yoshifumi Tanada
IPC分类号： G09G3/00 , G09G3/10 , G09G3/20 , G09G3/32 , H01L31/153
CPC分类号： G09G3/2011 , G09G3/006 , G09G3/2022 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G3/3291 , G09G2300/0417 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2310/027 , G09G2320/0233 , G09G2320/0257 , G09G2320/0285 , G09G2320/029 , G09G2320/0295 , G09G2320/043 , G09G2320/103 , G09G2360/145 , G09G2360/148 , G09G2360/18 , H01L27/3269 , H01L31/153
摘要： A self light emitting device having a function of correcting drops in brightness in self light emitting elements in a pixel portion, and capable of displaying a uniform image without brightness irregularities, is provided. A specific test pattern is displayed when an electric power source is connected, brightnesses are detected by photoelectric conversion elements arranged in each pixel, and then stored in a memory circuit. A correction circuit then corrects a first image signal based on portions which are insufficient from standard brightnesses (brightnesses of normal self light emitting elements at the same gray stale, stored in advance), and a second image signal is obtained. Display of an image in a display device is performed in accordance with the second image signal.

85. 发明授权

US06774578B2 Self light emitting device and method of driving thereof 有权
标题翻译：自发光装置及其驱动方法
公开(公告)号：US06774578B2
公开(公告)日：2004-08-10
申请号：US09956298
申请日：2001-09-18
申请人： Yoshifumi Tanada
发明人： Yoshifumi Tanada
IPC分类号： G09G310
CPC分类号： G09G3/2011 , G09G3/006 , G09G3/2022 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G3/3291 , G09G2300/0417 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2310/027 , G09G2320/0233 , G09G2320/0257 , G09G2320/0285 , G09G2320/029 , G09G2320/0295 , G09G2320/043 , G09G2320/103 , G09G2360/145 , G09G2360/148 , G09G2360/18 , H01L27/3269 , H01L31/153
摘要： A self light emitting device having a function of correcting drops in brightness in self light emitting elements in a pixel portion, and capable of displaying a uniform image without brightness irregularities, is provided. A specific test pattern is displayed when an electric power source is connected, brightnesses are detected by photoelectric conversion elements arranged in each pixel, and then stored in a memory circuit. A correction circuit then corrects a first image signal based on portions which are insufficient from standard brightnesses (brightnesses of normal self light emitting elements at the same gray stale, stored in advance), and a second image signal is obtained. Display of an image in a display device is performed in accordance with the second image signal.
摘要翻译：本发明提供一种自发光装置，其具有校正像素部分中的自发光元件的亮度下降的功能，并且能够显示无亮度不均匀的均匀图像。当连接电源时显示特定的测试图案，通过在每个像素中布置的光电转换元件检测亮度，然后存储在存储器电路中。校正电路然后基于不符合标准亮度的部分（预先存储的相同灰色陈旧的正常自发光元件的亮度）来校正第一图像信号，并获得第二图像信号。根据第二图像信号执行显示装置中的图像的显示。

86. 发明申请

US20040046106A1 Photoconductive switch module 失效
标题翻译：光导开关模块
公开(公告)号：US20040046106A1
公开(公告)日：2004-03-11
申请号：US10616258
申请日：2003-07-09
申请人： OLYMPUS OPTICAL CO., LTD. , Agilent Technologies, Inc.
发明人： Junichi Nakano , Hiroshi Miyajima , Daisuke Matsuo , Kenzi Murakami , Mitsuchika Saito , You Kondoh , Tsutomu Takenaka , Yasuhisa Kaneko
IPC分类号： H01J040/14
CPC分类号： H01L31/02005 , H01L31/0203 , H01L31/153
摘要： The present invention is directed to a photoconductive switch module. The photoconductive switch module comprises a first substrate having light-emitting elements, and a second substrate having photoconductive switch elements, whose number is equal to that of the light-emitting elements. The light-emitting elements face the photoconductive switch elements, so that the photoconductive switch elements are turned on/off in accordance with lighting/extinction of the light-emitting elements. The photoconductive switch module further comprises a third substrate arranged between the first substrate and the second substrate. The third substrate has through holes, whose number is equal to that of the light-emitting elements. Each through hole is positioned between a light-emitting element and a photoconductive switch element facing each other. Drive light emitted from each light-emitting element travels to the photoconductive switch element via the through hole.
摘要翻译：本发明涉及光导开关模块。光电导开关模块包括具有发光元件的第一基板和具有光导开关元件的第二基板，其数量等于发光元件的数量。发光元件面对感光开关元件，使得光电开关元件根据发光元件的照明/消光而导通/截止。光电导开关模块还包括布置在第一基板和第二基板之间的第三基板。第三基板具有与发光元件的数量相等的通孔。每个通孔位于彼此面对的发光元件和光电导开关元件之间。从每个发光元件发出的驱动光通过通孔行进到感光开关元件。

87. 发明授权

US5404373A Electro-optical device 失效
标题翻译：电光装置
公开(公告)号：US5404373A
公开(公告)日：1995-04-04
申请号：US789172
申请日：1991-11-08
申请人： Julian Cheng
发明人： Julian Cheng
IPC分类号： G06E1/04 , H01L31/153 , H01S5/026 , H01S5/183 , H01S5/20 , H03K19/14 , H03K19/21 , H01S3/19
CPC分类号： H03K19/21 , G06E1/04 , H01L31/153 , H01S5/0261 , H03K19/14 , H01S5/0262 , H01S5/042 , H01S5/18308 , H01S5/2063
摘要： An electro-optical device includes a vertical cavity surface emitting laser a heterojunction light emitting device and heterojunction phototransistor on a semiconductor substrate. Layers of the heterojunction phototransistor and the heterojunction light-emitting device are electrically and optically coupled so there is regenerative optical and electrical feedback between them. Layers of the heterojunction light-emitting devices are proton implanted to control the feedback. Plural such devices are electrically and optically coupled together to perform logic functions, such as EXCLUSIVE OR, in response to optical signals.
摘要翻译：电光装置包括在半导体衬底上的垂直腔表面发射激光器异质结发光器件和异质结光电晶体管。异质结光电晶体管和异质结发光器件的层电耦合和光耦合，从而在它们之间存在再生光学和电反馈。异质结发光器件的层被质子注入以控制反馈。多个这样的设备电和光耦合在一起以执行响应于光信号的逻辑功能，例如EXCLUSIVE OR。

88. 发明授权

US5331659A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US5331659A
公开(公告)日：1994-07-19
申请号：US31098
申请日：1993-03-11
申请人： Toyoharu Ohata , Kazuhiko Nemoto , Masamichi Ogawa
发明人： Toyoharu Ohata , Kazuhiko Nemoto , Masamichi Ogawa
IPC分类号： G11C11/42 , H01L31/153 , H01S5/026 , H01S5/06 , H01S5/18 , H01S5/187 , H01S5/227 , H01S5/42 , H01S3/19
CPC分类号： G11C11/42 , H01L31/153 , H01S5/026 , H01S5/0261 , H01S5/0608 , H01S5/0611 , H01S5/18 , H01S5/187 , H01S5/227 , H01S5/42
摘要： An optical semiconductor device in which both of positive input and negative input are possible is disclosed. In the optical semiconductor device, two heterojunction phototransistors are connected in parallel of each other to the cathode of a laser diode. An optical memory in which setting, i.e., writing and resetting, i.e., erasing by light are possible is also disclosed. In the optical memory, two heterojunction phototransistors are connected in parallel of each other to the cathode of a laser diode to make a memory cell.
摘要翻译：公开了一种其中正输入和负输入都是可能的光半导体器件。在光半导体器件中，两个异质结光电晶体管彼此并联连接到激光二极管的阴极。还公开了一种光存储器，其中设置，即写入和复位，即通过光擦除是可能的。在光学存储器中，两个异质结光电晶体管彼此并联连接到激光二极管的阴极以形成存储单元。

89. 发明授权

US5247168A Light frequency converter having laser device connected in series with photodetector 失效
标题翻译：具有与光电转换器连接的激光装置的光频转换器
公开(公告)号：US5247168A
公开(公告)日：1993-09-21
申请号：US764232
申请日：1991-09-23
申请人： Jean-Paul Pocholle , Michel Papuchon
发明人： Jean-Paul Pocholle , Michel Papuchon
IPC分类号： G02F2/02 , H01L31/153 , H01S5/026 , H01S5/183
CPC分类号： G02F2/02 , H01L31/153 , H01S5/0262 , H01S5/0611 , H01S5/183
摘要： A structure providing a monolithic integration of an optical detector with an optical transmitter working in the region of the visible or the near IR spectrum. This source type makes it possible to transpose a perceived image belonging to a wavelength region to another wavelength region with a good output (photons/electrons coupling). Such a device may find particular application in imagery and signal processing systems.
摘要翻译：提供光学检测器与在可见光或近红外光谱区域工作的光发射器的单片集成的结构。该源类型使得可以将具有良好输出（光子/电子耦合）的属于波长区域的感知图像转置到另一个波长区域。这样的设备可以在图像和信号处理系统中找到特定的应用。

90. 发明授权

US4819048A Optoelectronic bistable apparatus 失效
标题翻译：光电双稳态仪器
公开(公告)号：US4819048A
公开(公告)日：1989-04-04
申请号：US74636
申请日：1987-07-17
申请人： Ranjit S. Mand , Masaru Nakamura
发明人： Ranjit S. Mand , Masaru Nakamura
IPC分类号： H01L31/14 , G02F3/02 , H01L27/15 , H01L31/153 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/026 , H01L29/70 , H01L29/74 , H01L31/06
CPC分类号： H01L31/153 , H01L27/15 , H01L33/0025
摘要： An optoelectronic bistable apparatus having a double heterojunction structure comprising a light-emitting first semiconductor layer of n type GaAs interlaid between a second semiconductor layer of n.sup.- type AlGaAs and a third semiconductor layer of p.sup.+ type AlGaAs, the second and third semiconductor layers having a broader energy gap than that of the first semiconductor layer. An extremely thin fourth semiconductor layer of p.sup.+ type GaAs with a high impurity concentration is deposited on the second semiconductor layer. A fifth semiconductor layer of n.sup.- type AlGaAs, n.sup.+ type AlGaAs and n.sup.+ type GaAs is formed on the fourth semiconductor layer. At least a portion of the fifth semiconductor layer which contacts the fourth semiconductor layer has a broader energy gap than that of the second semiconductor layer.
摘要翻译：一种具有双异质结结构的光电双稳态装置，包括：在n型AlGaAs的第二半导体层和p +型AlGaAs的第三半导体层之间插入n型GaAs的发光第一半导体层，所述第二和第三半导体层具有比第一半导体层更宽的能隙。在第二半导体层上沉积具有高杂质浓度的极薄的p +型GaAs第四半导体层。在第四半导体层上形成n型AlGaAs，n +型AlGaAs和n +型GaAs的第五半导体层。与第四半导体层接触的第五半导体层的至少一部分具有比第二半导体层更宽的能隙。

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