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81. 发明授权

US09645082B1 Ballistic carrier spectral sensor 有权
公开(公告)号：US09645082B1
公开(公告)日：2017-05-09
申请号：US15160417
申请日：2016-05-20
申请人： Sharp Kabushiki Kaisha
发明人： Diego Gallardo , James Andrew Robert Dimmock , Matthias Kauer , Valerie Berryman-Bousquet
IPC分类号： H01L31/072 , G01N21/552 , G01J3/28 , H01L31/054 , H01L31/0352 , H01L31/055
CPC分类号： G01J3/2803 , H01L27/14621 , H01L27/14647 , H01L27/14681 , H01L31/022491 , H01L31/035209 , H01L31/035236 , H01L31/0543 , H01L31/055 , H01L31/11
摘要： A ballistic carrier spectral sensor includes a photon absorption region to generate photo-generated carriers from incident light; a first potential barrier region adjacent the photon absorption region and having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a second potential barrier region having an adjustable height defining a minimum energy of the photo-generated carriers required to pass therethrough; a spillage well region disposed between the first potential barrier region and the second potential barrier region and configured to collect photo-generated carriers having an energy lower than that required to pass through the second potential barrier region; and a collection region adjacent the second potential barrier region and configured to collect carriers that cross the second potential barrier region. A total thickness of the first potential barrier region and the spillage well region is less than a mean free path of the photo-generated carriers.

82. 发明授权

US09627563B2 Semiconductor barrier photo-detector 有权
公开(公告)号：US09627563B2
公开(公告)日：2017-04-18
申请号：US14246322
申请日：2014-04-07
申请人： Semi Conductor Devices-An Elbit Systems-Rafael Partnership
发明人： Philip Klipstein
IPC分类号： H01L31/0352 , H01L31/0304 , H01L31/101 , H01L27/144
CPC分类号： H01L31/11 , H01L27/1443 , H01L31/03046 , H01L31/035209 , H01L31/035236 , H01L31/101 , Y02E10/544
摘要： The present invention discloses a photo-detector comprising: an n-type photon absorbing layer of a first energy bandgap; a middle barrier layer, an intermediate layer is a semiconductor structure; and a contact layer of a third energy bandgap, wherein the layer materials are selected such that the first energy bandgap of the photon absorbing layer is narrower than that of said middle barrier layer; wherein the material composition and thickness of said intermediate layer are selected such that the valence band of the intermediate layer lies above the valence band in the barrier layer to create an efficient trapping and transfer of minority carriers from the barrier layer to the contact layer such that a tunnel current through the barrier layer from the contact layer to the photon absorbing layer is less than a dark current in the photo-detector and the dark current from the photon-absorbing layer to said middle barrier layer is essentially diffusion limited and is due to the unimpeded flow of minority carriers, thus reducing generation-recombination (GR) noise of the photo-detector. The principles of the present invention also apply to inverted polarity structures of the form pBp in which all the doping polarities and band alignments described above are reversed.

83. 发明申请

US20170088422A1 Synthesis Method for Controlling Antimony Selenide Nanostructure Shapes 有权
公开(公告)号：US20170088422A1
公开(公告)日：2017-03-30
申请号：US14866044
申请日：2015-09-25
申请人： Sharp Laboratories of America (SLA), Inc.
发明人： Alexey Koposov
IPC分类号： C01B19/00 , H01L31/0352 , H01L31/0272
CPC分类号： C01B19/007 , C01P2004/16 , C01P2004/34 , C01P2004/64 , C01P2006/40 , H01L31/0272 , H01L31/032 , H01L31/035209 , H01L31/035227
摘要： Methods are provided for controlling the shape of antimony selenide (Sb2Se3) synthesized nanostructures. The method dissolves an antimony (III) salt in a first amount of carboxylic acid, forming an antimony precursor. In one aspect, antimony (III) chloride is dissolved in oleic acid. Separately, selenourea is dissolved in oleylamine, forming a selenium precursor. The antimony precursor is combined with the selenium precursor to form a first solution and cause a reaction. The reaction is quenched with a solvent having a low boiling point. In response to quenching the reaction in the first solution, antimony selenide nanorods are formed, having a length in the range of 150-200 nanometers (nm) and a diameter in the range of 20 to 30 nm. Related methods can be used to create, shorter nanorods, nanocrystals, and hollow nanospheres.

84. 发明授权

US09553224B2 Semiconductor photodetector element and method 有权
标题翻译：半导体光电探测元件及方法
公开(公告)号：US09553224B2
公开(公告)日：2017-01-24
申请号：US14657328
申请日：2015-03-13
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Nami Yasuoka , Hiroyasu Yamashita , Yoshiaki Nakata
IPC分类号： H01L31/0352 , H01L31/0232 , H01L31/18 , H01L31/075 , H01L31/107 , B82Y20/00 , H01L31/105
CPC分类号： H01L31/03529 , B82Y20/00 , H01L31/02327 , H01L31/035209 , H01L31/035236 , H01L31/035281 , H01L31/075 , H01L31/105 , H01L31/107 , H01L31/18 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.
摘要翻译：半导体光检测器元件包括具有第一导电类型的半导体衬底; 形成在所述半导体衬底的第一表面上的柱状结构，所述柱状结构由所述第一导电类型的半导体构成; 形成为围绕柱状结构的光吸收层; 以及形成为包围光吸收层的半导体层。

85. 发明申请

US20160225924A1 SOLAR CELL WITH SURFACE STAGED TYPE ANTIREFLECTIVE LAYER 审中-公开
标题翻译：具有表面类型抗反射层的太阳能电池
公开(公告)号：US20160225924A1
公开(公告)日：2016-08-04
申请号：US14808695
申请日：2015-07-24
申请人： Kingwave Corporation
发明人： Chieh-Hsiung Kuan , Ming-Lun Lee , Wen-Sheng Su
IPC分类号： H01L31/0236 , H01L31/0216
CPC分类号： H01L31/02168 , H01L31/02363 , H01L31/035209 , Y02E10/52
摘要： The present invention provides a solar cell with a surface staged type antireflective layer, comprising a photoelectric conversion layer having a first surface and a second surface opposite from each other and used for receiving incident photons in order to generate charged carriers; a staged type antireflective layer formed on the first surface; the staged type antireflective layer comprising a textured surface structure formed on the first surface via a coarsening method and a plurality of nanostructures formed to protrude from or indent into the textured surface structure; a front-side conductive layer disposed on top the staged type antireflective layer; and a back-side conductive layer disposed underneath the second surface; wherein the s staged type antireflective layer is used for allowing the solar cell to generate an antireflection effect subject to light in a full spectrum range; wherein the full spectrum range is between 300 nm to 1100 nm.
摘要翻译：本发明提供一种具有表面分级型抗反射层的太阳能电池，包括具有彼此相对的第一表面和第二表面的光电转换层，用于接收入射光子以产生带电载流子; 形成在第一表面上的分级型抗反射层; 分级型抗反射层包括通过粗化方法形成在第一表面上的织构化表面结构和形成为从纹理表面结构突出或缩进的多个纳米结构; 设置在分级型抗反射层顶部的前侧导电层; 以及设置在所述第二表面下方的背面导电层; 其中分级型抗反射层用于允许太阳能电池在全光谱范围内产生经受光的抗反射效应; 其中全光谱范围在300nm至1100nm之间。

86. 发明申请

US20160182155A1 Coherent Optical Receiver 有权
标题翻译：相干光接收机
公开(公告)号：US20160182155A1
公开(公告)日：2016-06-23
申请号：US14578756
申请日：2014-12-22
申请人： Opel Solar, Inc. , The University of Connecticut
发明人： Geoff W. Taylor , Yan Zhang
IPC分类号： H04B10/61 , H01L31/112 , H01L27/144 , H01L29/74 , H01L29/417 , H01L31/0352 , H01L31/0232
CPC分类号： H04B10/613 , H01L27/1443 , H01L29/41716 , H01L29/74 , H01L31/02325 , H01L31/035209 , H01L31/1129 , H04B10/615 , H04B10/63
摘要： A coherent optical receiver that receives an optical PSK-modulated signal includes optical elements that combine the optical PSK-modulated signal and an optical local-oscillating (LO) signal and splits the combined optical signals into multiple parts that have a predefined phase offset relative to one another. The receiver further includes at least one thyristor and control circuitry operably coupled to terminals of the at least one thyristor. The control circuitry is configured to receive the multiple parts of the combined optical signals and controls switching operation of the at least one thyristor according to phase offset of optical PSK-modulated signal relative to the optical LO signal.
摘要翻译：接收光学PSK调制信号的相干光学接收器包括组合光学PSK调制信号和光学本地振荡（LO）信号的光学元件，并将组合的光学信号分裂成具有相对于另一个。接收器还包括可操作地耦合到至少一个晶闸管的端子的至少一个晶闸管和控制电路。控制电路被配置为接收组合的光信号的多个部分，并且根据光学PSK调制信号相对于光LO信号的相位偏移来控制至少一个晶闸管的开关操作。

87. 发明授权

US09348078B2 Optical antennas with enhanced fields and electron emission 有权
标题翻译：具有增强的场和电子发射的光天线
公开(公告)号：US09348078B2
公开(公告)日：2016-05-24
申请号：US13702303
申请日：2011-06-08
申请人： Phillip J. Layton
发明人： Phillip J. Layton
IPC分类号： G02B6/00 , H01L31/054 , B82Y20/00 , G02B6/122 , H01L31/0352 , H01Q21/06
CPC分类号： G02B6/00 , B82Y20/00 , G02B6/1226 , H01L31/035209 , H01L31/0547 , H01Q21/064 , Y02E10/52
摘要： An electromagnetic energy collecting and sensing device is described. The device uses enhanced fields to emit electrons for energy collection. The device is configured to collect energy from visible light, infrared radiation and ultraviolet electromagnetic radiation. The device includes a waveguide with a geometry selected to enhance the electric field along a conductor to create a high, localized electric field, which causes electron emission across a gap to an electron return plane.
摘要翻译：描述了电磁能量收集和感测装置。该装置使用增强的场来发射电子以进行能量收集。该装置被配置为从可见光，红外辐射和紫外线电磁辐射中收集能量。该器件包括具有被选择用于增强沿导体的电场的几何形状的波导，以产生高的局部电场，其导致跨越电子返回平面的间隙的电子发射。

88. 发明申请

US20150340989A1 Alternating Bias Hot Carrier Solar Cells 有权
公开(公告)号：US20150340989A1
公开(公告)日：2015-11-26
申请号：US14724426
申请日：2015-05-28
申请人： Ostendo Technologies, Inc.
发明人： Hussein S. El-Ghoroury , Dale A. McNeill , Selim E. Guncer
IPC分类号： H02S40/34 , H01L31/068 , H01L31/0352 , H01L31/073 , H01L31/0749 , H01L31/0735 , H01L31/0693
CPC分类号： H02S40/34 , B82Y20/00 , B82Y30/00 , B82Y99/00 , H01L31/02008 , H01L31/02021 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/0322 , H01L31/0352 , H01L31/035209 , H01L31/035218 , H01L31/035236 , H01L31/042 , H01L31/068 , H01L31/0682 , H01L31/0693 , H01L31/073 , H01L31/0735 , H01L31/0749 , H02S40/32 , Y02E10/541 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S977/755 , Y10S977/774 , Y10S977/948
摘要： Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

89. 发明申请

US20150325712A1 Nanostructured Thin-Film Solar Cell 审中-公开
标题翻译：纳米结构薄膜太阳能电池
公开(公告)号：US20150325712A1
公开(公告)日：2015-11-12
申请号：US14651063
申请日：2013-12-10
申请人： Inna KOZINSKY , ROBERT BOSCH GMBH
发明人： Inna Kozinsky
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02363 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/02366 , H01L31/035209 , H01L31/1828 , H01L31/1884 , Y02E10/50
摘要： A nanostructured thin-film solar cell in one embodiment includes a photovoltaic absorber including a plurality of nanocones, each of the nanocones defining a longitudinal axis which extends through a first surface of the nanocone and a second surface of the nanocone, a translucent conductive coating positioned above the first surfaces of the photovoltaic absorber nanocones, and a conductive layer positioned on the second surfaces of the photovoltaic absorber nanocones.
摘要翻译：在一个实施方案中，纳米结构薄膜太阳能电池包括包含多个纳米骨的光伏吸收剂，每个纳米骨限定延伸穿过纳米针的第一表面的纵向轴线和纳米酮的第二表面，定位的半透明导电涂层在光伏吸收剂纳米颗粒的第一表面之上，以及位于光伏电池纳米颗粒的第二表面上的导电层。

90. 发明授权

US09159853B2 Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer 有权
标题翻译： III-V族化合物半导体光电检测器，III-V族化合物半导体光电检测器，光电检测器和外延晶片的制造方法
公开(公告)号：US09159853B2
公开(公告)日：2015-10-13
申请号：US14072636
申请日：2013-11-05
申请人： Sumitomo Electric Industries, Ltd.
发明人： Katsushi Akita , Takashi Ishizuka , Kei Fujii , Youichi Nagai
IPC分类号： H01L31/00 , H01L27/148 , H01L31/0352 , H01L21/02 , H01L31/0304 , H01L31/109 , H01L31/18
CPC分类号： H01L31/035209 , H01L21/02392 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L31/03042 , H01L31/03046 , H01L31/035236 , H01L31/109 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.
摘要翻译：本发明的目的是提供一种III-V族化合物半导体光电检测器，其包括具有含有Sb作为V族构成元素的III-V族化合物半导体层和n型InP窗口层的吸收层，得到在减少的暗电流。由于在吸收层21的GaAsSb层生长期间提供的锑的记忆效应，在吸收层23上生长的InP层23含有锑作为杂质。在III-V族化合物半导体光电检测器11中， InP层23含有锑作为杂质，并掺杂有硅作为n型掺杂剂。虽然InP层23中的锑杂质产生空穴，但是包含在InP层23中的硅补偿所生成的载流子。结果，InP层23的第二部分23d具有足够的n型导电性。

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