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81. 发明授权

US09024400B2 Photoelectric conversion element, method of manufacturing photoelectric conversion element, and electronic device 有权
标题翻译：光电转换元件，光电转换元件的制造方法以及电子器件
公开(公告)号：US09024400B2
公开(公告)日：2015-05-05
申请号：US14028940
申请日：2013-09-17
申请人： Seiko Epson Corporation
发明人： Takashi Miyata , Yasunori Hattori
IPC分类号： H01L27/14 , H01L31/0248 , H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/032 , H01L31/09
CPC分类号： H01L31/186 , A61B5/1455 , A61B5/4845 , H01L27/1446 , H01L27/14678 , H01L31/0216 , H01L31/0224 , H01L31/0248 , H01L31/032 , H01L31/0322 , H01L31/03923 , H01L31/09 , H01L31/109 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a photoelectric conversion element, which is provided with a substrate, a first electrode film having first and second conductive films provided on the substrate, a metal compound film covering the first electrode film, a semiconductor film connected with the metal compound film, a second electrode film connected with the semiconductor film, and an insulating film covering and surrounding the substrate, the first electrode film, the semiconductor film, and the metal compound film, the method including: forming the first conductive film to be connected with the substrate and the second conductive film to be connected with the first electrode film; forming the second conductive film in a predetermined shape using wet etching after the forming of the first and second conductive films, and forming the metal compound film which covers the first electrode film after the forming of the metal compound film.
摘要翻译：一种制造具有基板的光电转换元件的方法，具有设置在基板上的第一和第二导电膜的第一电极膜，覆盖第一电极膜的金属化合物膜，与金属化合物膜连接的半导体膜与半导体膜连接的第二电极膜和覆盖并包围基板，第一电极膜，半导体膜和金属化合物膜的绝缘膜，该方法包括：形成与第一导电膜连接的第一导电膜基板和与第一电极膜连接的第二导电膜; 在形成所述第一和第二导电膜之后，使用湿蚀刻形成所述第二导电膜，并且在形成所述金属化合物膜之后形成覆盖所述第一电极膜的金属化合物膜。

82. 发明授权

US09000353B2 Light absorption and filtering properties of vertically oriented semiconductor nano wires 有权
标题翻译：垂直取向的半导体纳米线的吸光和滤光性能
公开(公告)号：US09000353B2
公开(公告)日：2015-04-07
申请号：US12910664
申请日：2010-10-22
申请人： Kwanyong Seo , Munib Wober , Paul Steinvurzel , Ethan Schonbrun , Yaping Dan , Kenneth B. Crozier
发明人： Kwanyong Seo , Munib Wober , Paul Steinvurzel , Ethan Schonbrun , Yaping Dan , Kenneth B. Crozier
IPC分类号： G01J1/42 , B82Y30/00 , B82Y20/00 , B82Y40/00 , H01L27/146 , H01L31/0352
CPC分类号： H01L27/14607 , B82Y20/00 , B82Y30/00 , B82Y40/00 , B82Y99/00 , F21V9/08 , G02B5/22 , G09F13/00 , H01L27/1446 , H01L27/14603 , H01L27/14629 , H01L27/14692 , H01L31/035227 , H01L31/107 , H01L31/18 , Y10S977/762 , Y10S977/888 , Y10S977/954 , Y10T428/24174 , Y10T428/24893
摘要： A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.
摘要翻译：本文描述了纳米线阵列。纳米线阵列包括基底和从基底基本垂直延伸的多个纳米线; 其中：每个纳米线沿其整个长度均匀化学化学; 纳米线的折射率是纳米线的包层的折射率的至少两倍。该纳米线阵列可用作光电检测器，亚微米滤色器，静态彩色显示器或动态彩色显示器。

83. 发明申请

US20150053847A1 SILICON PHOTOMULTIPLIER 有权
标题翻译：硅胶光刻胶
公开(公告)号：US20150053847A1
公开(公告)日：2015-02-26
申请号：US14388162
申请日：2012-03-29
申请人： Tetsuo Furumiya
发明人： Tetsuo Furumiya
IPC分类号： G01J1/44 , G01J1/42
CPC分类号： G01J1/44 , G01J1/4228 , G01J2001/4413 , G01J2001/446 , G01T1/20 , G01T1/208 , G01T1/248 , H01L27/1446 , H01L31/02019
摘要： One embodiment of the disclosure includes an A-D conversion circuit connected to a photodiode for providing a silicon photomultiplier that with enhanced detection accuracy and a time resolution. A current generated upon photon detection by the photodiode partially flows into another photodiode adjacent to the photodiode arranged in parallel via a resistor. At this time, the current is charged into a parasitic capacitance adjacent to the photodiode, and thereafter is discharged. However, the discharged current cannot flow toward an output terminal by the A-D conversion circuit, and also cannot switch the A-D conversion circuit. Consequently, the construction of the disclosure can detect light with no influence of the current discharged from the parasitic capacitance. As a result, the disclosure achieves a silicon photomultiplier with high detection accuracy and a satisfactory time resolution.
摘要翻译：本公开的一个实施例包括连接到光电二极管的A-D转换电路，用于提供具有增强的检测精度和时间分辨率的硅光电倍增管。通过光电二极管的光子检测产生的电流部分地通过电阻器流入与光电二极管相邻的另一个光电二极管。此时，将电流充电到与光电二极管相邻的寄生电容，然后放电。然而，放电电流不能通过A-D转换电路流向输出端子，也不能切换A-D转换电路。因此，本公开的结构可以不受从寄生电容放电的电流的影响来检测光。结果，本发明实现了具有高检测精度和令人满意的时间分辨率的硅光电倍增管。

84. 发明申请

US20150035014A1 PIN DIODE STRUCTURE HAVING SURFACE CHARGE SUPPRESSION 有权
标题翻译：具有表面电荷抑制的PIN二极管结构
公开(公告)号：US20150035014A1
公开(公告)日：2015-02-05
申请号：US13959081
申请日：2013-08-05
申请人： Raytheon Company
发明人： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC分类号： H01L27/146 , H01L29/868
CPC分类号： H01L27/14643 , H01L27/1446 , H01L27/14605 , H01L27/14649 , H01L27/14689 , H01L29/868 , H01L31/105
摘要： A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
摘要翻译：一种半导体结构，具有：硅结构; 以及形成在所述硅结构中的多个横向间隔开的PiN二极管; 并且所述硅结构的表面被配置为减少穿过所述PiN二极管的反向偏置漏电流。在一个实施例中，栅极电极结构设置在硅结构的表面上，栅极电极结构具有设置在相邻的二极管对之间的部分，栅极结构被偏置以防止通过二极管的漏电流。

85. 发明申请

US20140346539A1 DIODE MATRIX DEVICE WITH ENHANCED STABILITY 有权
标题翻译：具有增强稳定性的二极矩阵器件
公开(公告)号：US20140346539A1
公开(公告)日：2014-11-27
申请号：US14282072
申请日：2014-05-20
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Laurent Mollard , Nicolas Baier , Johan Rothman
IPC分类号： H01L27/15 , H01L27/144
CPC分类号： H01L27/156 , H01L27/1446 , H01L27/1463
摘要： The invention relates to a device comprising a substrate supporting a matrix (70) of diodes (Di) organised in rows and columns, and a peripheral substrate contact (75) is arranged on at least one side of the matrix (70), characterised in that the substrate comprises one or several buried conducting lines (73) having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.
摘要翻译：本发明涉及一种装置，其包括支撑以行和列组织的二极管（Di）的矩阵（70）的基板，以及在基体（70）的至少一侧上设置外围基板接触（75），其特征在于，该衬底包括一个或多个掩埋的导电线（73），其不与外围衬底接触件直接电连接并且位于至少两个相邻的二极管列之间以及至少两个相邻的二极管行之间。

86. 发明申请

US20140342493A1 RADIATION DETECTOR HAVING A BANDGAP ENGINEERED ABSORBER 有权
标题翻译：带有工程吸收剂的辐射探测器
公开(公告)号：US20140342493A1
公开(公告)日：2014-11-20
申请号：US14286933
申请日：2014-05-23
申请人： DRS RSTA, Inc.
发明人： Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
IPC分类号： H01L31/18 , H01L31/0296 , H01L31/0216
CPC分类号： G01J1/44 , H01L27/1446 , H01L27/14652 , H01L31/02161 , H01L31/0232 , H01L31/024 , H01L31/02966 , H01L31/101 , H01L31/1032 , H01L31/1832
摘要： A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.
摘要翻译：提供一种辐射检测器，其包括具有渐变多层结构的辐射吸收体的光电二极管。吸收体的各层由诸如HgCdTe的半导体材料形成。第一层被形成为具有第一预定波长截止。层中的第二层设置在吸收体的第一层和第一表面之下，辐射被接收在该吸收体的第一表面下方。第二层具有半导体材料的渐变组成结构，使得第二层的波长截止从第二预定波长截止到第一预定波长截止不同，使得第二层比带隙的第一带隙具有逐渐变小的带隙第一层分级多层辐射吸收器结构使得载体能够朝向用于测量由辐射吸收器感测的辐射的导体流动。

87. 发明申请

US20140312448A1 Integrated Avalanche Photodiode Arrays 有权
标题翻译：集成雪崩光电二极管阵列
公开(公告)号：US20140312448A1
公开(公告)日：2014-10-23
申请号：US14257179
申请日：2014-04-21
申请人： LightSpin Technologies, Inc.
发明人： Eric S. Harmon
IPC分类号： H01L27/146 , H01L31/107
CPC分类号： H01L31/107 , H01L27/1446 , H01L27/14609 , H01L27/14643 , H01L27/14683 , H01L31/0352 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
摘要翻译：本公开包括用于检测光子的装置，包括雪崩光子检测器，这种检测器的阵列，以及包括这种阵列的电路。在一些方面，检测器和阵列包括由电离材料包围的虚拟斜边边缘台面结构，该电阻材料被离子注入损坏，并且具有朝向台面结构的顶部向内逐渐向内倾斜或朝向离子注入发生方向的侧壁轮廓。其它方面涉及掩蔽和多次植入和/或退火步骤。此外，公开了制造和使用这些器件，电路和阵列的方法。

88. 发明申请

US20140312304A1 LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, DETECTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT 有权
标题翻译：光接收元件，半导体外延晶体管，检测器件及制造光接收元件的方法
公开(公告)号：US20140312304A1
公开(公告)日：2014-10-23
申请号：US14347581
申请日：2013-05-16
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kohei Miura , Hiroshi Inada , Yasuhiro Iguchi , Tadashi Saito
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/0304
CPC分类号： H01L31/18 , B82Y20/00 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L27/1446 , H01L27/14634 , H01L27/1469 , H01L27/14694 , H01L31/03046 , H01L31/035236 , H01L31/103 , H01L31/105
摘要： Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.
摘要翻译：提供一种光接收元件等，其在近红外区域的中红外区域具有高响应度，并且在保持经济效率的同时稳定地具有高质量。光接收元件包括对波长为3〜12μm的光透明的InP基板，在InP基板上外延生长的中间层，与中间层接触的GaSb缓冲层，接收层，其在GaSb缓冲层上外延生长并具有II型多量子阱结构。 GaSb缓冲层在中间层上外延生长，同时超过正常晶格匹配条件的范围。

89. 发明申请

US20140291479A1 Backside Configured Surface Plasmonic Structure For Infrared Photodetector And Imaging Focal Plane Array Enhancement 有权
标题翻译：背面配置的红外光电检测器和成像焦平面阵列增强的表面等离子体结构
公开(公告)号：US20140291479A1
公开(公告)日：2014-10-02
申请号：US14227607
申请日：2014-03-27
申请人： University of Massachusetts
发明人： Xuejun Lu , Guiru Gu , Puminun Vasinajindakaw
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035218 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/09
摘要： The invention relates to quantum dot and photodetector technology, and more particularly, to quantum dot infrared photodetectors (QDIPs) and focal plane array. The invention further relates to devices and methods for the enhancement of the photocurrent of quantum dot infrared photodetectors in focal plane arrays.
摘要翻译：本发明涉及量子点和光电探测器技术，更具体地涉及量子点红外光电探测器（QDIP）和焦平面阵列。本发明还涉及用于增强焦平面阵列中的量子点红外光电检测器的光电流的装置和方法。

90. 发明授权

US08847916B2 Touch panel and electronic device 有权
标题翻译：触摸屏和电子设备
公开(公告)号：US08847916B2
公开(公告)日：2014-09-30
申请号：US12686564
申请日：2010-01-13
申请人： Yoshiyuki Kurokawa , Konami Izumi
发明人： Yoshiyuki Kurokawa , Konami Izumi
IPC分类号： G06F3/042 , G06F3/041 , G09G5/00 , G09G3/36 , G02F1/1333
CPC分类号： G06F3/0421 , B81B3/0021 , B81B2201/0264 , G02F1/13338 , G02F2201/44 , G06F3/0412 , G06F3/0416 , G06F3/042 , G09G3/3648 , H01L27/1225 , H01L27/1446
摘要： To provide a touch panel with reduced disturbance of display and with improved mechanical strength by suppressing variation in the space between a pair of substrates which form the touch panel even when in contact with an object to be detected. A pixel portion including a plurality of pixels is provided between a pair of substrates. Each pixel includes a photosensor portion which detects that the object to be detected is in contact with one of the pair of substrates, and a MEMS portion which generates a mechanical displacement in a direction perpendicular to the pair of substrates when a signal based on a detection result of the photosensor portion is input.
摘要翻译：通过抑制形成触摸面板的一对基板之间的空间的变化，即使在与被检测物接触的情况下，也能够提供具有降低的显示干扰和改善的机械强度的触摸面板。包括多个像素的像素部分设置在一对基板之间。每个像素包括光电传感器部分，其检测待检测对象与一对基板中的一个接触;以及MEMS部分，当基于检测的信号时，在垂直于该对基板的方向上产生机械位移的MEMS部分输入光电传感器部分的结果。

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