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81. 发明申请

US20140057416A1 SEMICONDUCTIVE MICRO- AND NANO-WIRE ARRAY MANUFACTURING 有权
标题翻译：半导体微纳米线阵列制造
公开(公告)号：US20140057416A1
公开(公告)日：2014-02-27
申请号：US13972809
申请日：2013-08-21
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Emily L. Warren , Heather A. Audesirk , Nathan S. Lewis
IPC分类号： H01L21/02
CPC分类号： H01L21/0259 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L21/02656
摘要： The disclosure provides methods of manufacturing semiconductive structures using stamping and VLS techniques.
摘要翻译：本公开提供使用冲压和VLS技术制造半导体结构的方法。

82. 发明授权

US08455881B2 Ge quantum dots for dislocation engineering of III-N on silicon 有权
标题翻译： Ge量子点用于硅片上III-N的位错工程
公开(公告)号：US08455881B2
公开(公告)日：2013-06-04
申请号：US13235544
申请日：2011-09-19
申请人： Erdem Arkun , Andrew Clark
发明人： Erdem Arkun , Andrew Clark
IPC分类号： H01L29/15
CPC分类号： H01L21/02532 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02513 , H01L21/0259 , H01L29/127 , H01L29/2003
摘要： A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.
摘要翻译：虚拟衬底结构包括具有在硅衬底上生长的III-N的第一层的晶体硅衬底。 Ge簇或量子点在III-N的第一层上生长，并且在Ge簇或量子点上生长第二层III-N，并且在Ge簇或量子之间暴露的III-N的第一层的任何部分圆点附加的交替的Ge簇或III-N的量子点和层生长在形成III-N的上表面的III-N的第二层上。通常，Ge簇或III-N的量子点和层的附加交替层继续进行，直到基本上消除了与上表面相邻的III-N中的位错。

83. 发明申请

US20130069072A1 SEMICONDUCTOR CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, POWER UNIT, AND AMPLIFIER 有权
标题翻译：半导体晶体衬底，半导体晶体衬底的制造方法，半导体器件的制造方法，功率单元和放大器
公开(公告)号：US20130069072A1
公开(公告)日：2013-03-21
申请号：US13554117
申请日：2012-07-20
申请人： Shuichi TOMABECHI
发明人： Shuichi TOMABECHI
IPC分类号： H01L21/20 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02381 , H01L21/0254 , H01L21/0259 , H01L21/02667 , H01L29/2003 , H01L29/4236
摘要： A semiconductor crystal substrate includes a substrate; and a protection layer formed by applying nitride on a surface of the substrate. The protection layer is in an amorphous state in a peripheral area at an outer peripheral part of the substrate, and the protection layer is crystallized in an internal area of the protection layer that is inside the peripheral area of the protection layer.
摘要翻译：半导体晶体基板包括基板; 以及通过在衬底的表面上施加氮化物而形成的保护层。保护层在基板的外周部的周边区域处于非晶状态，保护层在保护层的保护层的周边区域内部的内部区域中结晶化。

84. 发明申请

US20130069039A1 Ge QUANTUM DOTS FOR DISLOCATION ENGINEERING OF III-N ON SILICON 有权
标题翻译： Ge在III-N的硅离子工程中的应用
公开(公告)号：US20130069039A1
公开(公告)日：2013-03-21
申请号：US13235544
申请日：2011-09-19
申请人： Erdem Arkun , Andrew Clark
发明人： Erdem Arkun , Andrew Clark
IPC分类号： H01L29/06 , H01L21/20 , B82Y99/00 , B82Y40/00
CPC分类号： H01L21/02532 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02513 , H01L21/0259 , H01L29/127 , H01L29/2003
摘要： A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.
摘要翻译：虚拟衬底结构包括具有在硅衬底上生长的III-N的第一层的晶体硅衬底。 Ge簇或量子点在III-N的第一层上生长，并且在Ge簇或量子点上生长第二层III-N，并且在Ge簇或量子之间暴露的III-N的第一层的任何部分圆点附加的交替的Ge簇或III-N的量子点和层生长在形成III-N的上表面的III-N的第二层上。通常，Ge簇或III-N的量子点和层的附加交替层继续进行，直到基本上消除了与上表面相邻的III-N中的位错。

85. 发明申请

US20120132903A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120132903A1
公开(公告)日：2012-05-31
申请号：US13297474
申请日：2011-11-16
申请人： Shunpei YAMAZAKI , Masahiro TAKAHASHI , Tetsunori MARUYAMA
发明人： Shunpei YAMAZAKI , Masahiro TAKAHASHI , Tetsunori MARUYAMA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/06 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L29/36 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.
摘要翻译：通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。以这种方式形成的氧化物半导体膜用于晶体管的有源层。

86. 发明申请

US20120052658A1 QUANTUM DOT FORMING METHOD, STORAGE MEDIUM STORING A PROGRAM AND SUBSTRATE PROCESSING APPARATUS FOR EXECUTION OF THE METHOD 审中-公开
标题翻译：量子点形成方法，存储介质存储方法和基板处理装置，用于执行方法
公开(公告)号：US20120052658A1
公开(公告)日：2012-03-01
申请号：US13216848
申请日：2011-08-24
申请人： Song Yun KANG , Satohiko HOSHINO
发明人： Song Yun KANG , Satohiko HOSHINO
IPC分类号： H01L21/20 , B05C9/08 , B82Y30/00 , B82Y40/00
CPC分类号： H01L21/02546 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/0259 , H01L21/02617
摘要： A quantum dot forming method for forming quantum dots on a surface of a substrate includes exciting a substrate surface with a laser beam having a standing wave which is irradiated from one side of the substrate along the surface of the substrate to excite the surface of the substrate at an interval of one half of a wavelength of the standing wave, and forming a quantum dot with a film differing in lattice constant from a base film forming the surface of the substrate by allowing the film differing in lattice constant to grow on the substrate to form the quantum dots in excited spots of the surface of the substrate.
摘要翻译：用于在基板的表面上形成量子点的量子点形成方法包括：激发基板表面，该激光束具有沿基板表面从基板的一侧照射的驻波，以激发基板的表面以驻波的波长的一半的间隔，通过使不同晶格常数的膜在基板上生长而形成具有与形成基板表面的基膜不同的晶格常数的量子点在基板表面的激发点形成量子点。

87. 发明授权

US08017931B2 LED and fabrication method thereof 有权
标题翻译： LED及其制造方法
公开(公告)号：US08017931B2
公开(公告)日：2011-09-13
申请号：US10538078
申请日：2003-12-08
申请人： Sung Chul Choi
发明人： Sung Chul Choi
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , H01L21/0242 , H01L21/02538 , H01L21/0259 , H01L21/0262 , H01L21/02639 , H01L33/08 , H01L33/24
摘要： Disclosed is a quantum-dot LED and fabrication method thereof. The quantum-dot LED includes: a substrate; a n-type semiconductor layer formed on the substrate; an insulator layer formed on the n-type semiconductor layer and provided with a plurality of holes; quantum dots formed by filling the holes; and a p-type semiconductor layer formed on the insulator layer in which the quantum dots are formed. According to the inventive LED, the size and density of the quantum dots are controllable to thereby make the property control of the LED easy. Also, since it can be anticipated that the LED has a high internal quantum efficiency compared with the conventional LED using quantum well, high light emitting efficiency can be obtained.
摘要翻译：公开了一种量子点LED及其制造方法。量子点LED包括：基板; 形成在所述基板上的n型半导体层; 形成在所述n型半导体层上并具有多个孔的绝缘体层; 通过填充孔形成的量子点; 以及形成在其上形成有量子点的绝缘体层上的p型半导体层。根据本发明的LED，量子点的尺寸和密度是可控的，从而使得LED的性质控制变得容易。此外，由于可以预期，与使用量子阱的常规LED相比，LED具有高的内部量子效率，因此可以获得高的发光效率。

88. 发明申请

US20110114915A1 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20110114915A1
公开(公告)日：2011-05-19
申请号：US12662845
申请日：2010-05-06
申请人： Sang-moon Lee , Young-soo Park
发明人： Sang-moon Lee , Young-soo Park
IPC分类号： H01L33/04 , H01L21/20
CPC分类号： H01L21/0259 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02636 , H01L21/02639 , H01L21/02664 , H01L33/08 , H01L33/18 , H01L33/382 , H01L33/44
摘要： A light emitting device may include a plurality of nano-structures having a strip shape, each including a first nano-structure and a second nano-structure, the first nano-structures being the same height on the buffer layer.
摘要翻译：发光器件可以包括具有带状的多个纳米结构，每个纳米结构包括第一纳米结构和第二纳米结构，第一纳米结构在缓冲层上具有相同的高度。

89. 发明申请

US20100155767A1 Light emitting device using a micro-rod and method of manufacturing a light emitting device 审中-公开
标题翻译：使用微型棒的发光装置及制造发光装置的方法
公开(公告)号：US20100155767A1
公开(公告)日：2010-06-24
申请号：US12461415
申请日：2009-08-11
申请人： Moon-sang Lee , Sung-soo Park
发明人： Moon-sang Lee , Sung-soo Park
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01L33/18 , H01L33/44
摘要： A light emitting device using a micro-rod and a method of manufacturing a light emitting device are provided, the method includes forming a material layer on a substrate. The material layer is patterned such that a hole is formed that exposes a surface of the substrate. A core is grown in the shape of a micro-rod on the surface of the substrate exposed through the hole. A light emitting layer is deposited on the core. A shell is grown on the light emitting layer.
摘要翻译：提供了使用微型杆的发光装置和制造发光器件的方法，该方法包括在衬底上形成材料层。图案化材料层，使得形成露出基板表面的孔。芯通过孔露出的衬底的表面上生长成微杆的形状。发光层沉积在芯上。在发光层上生长壳。

90. 发明申请

US20090226680A1 PROCESS FOR MODIFYING THE PROPERTIES OF A THIN LAYER AND SUBSTRATE APPLYING SAID PROCESS 审中-公开
标题翻译：用于修改薄层性质的方法和应用该方法的基材
公开(公告)号：US20090226680A1
公开(公告)日：2009-09-10
申请号：US12470540
申请日：2009-05-22
申请人： Olivier MARTY , Volodymyr LYSENKO
发明人： Olivier MARTY , Volodymyr LYSENKO
IPC分类号： B32B3/10
CPC分类号： B81C1/0038 , B81C1/00714 , C30B25/02 , H01L21/0237 , H01L21/02381 , H01L21/02439 , H01L21/02463 , H01L21/02513 , H01L21/02521 , H01L21/02543 , H01L21/02546 , H01L21/0259 , H01L21/02658 , H01L39/2454 , H01L41/332 , Y10S977/72 , Y10S977/811 , Y10S977/825 , Y10S977/832 , Y10T428/24802
摘要： The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.
摘要翻译：本发明涉及一种用于改变在微电子学，纳米电子学或微技术领域中使用的形成衬底（3）的支撑体（2）的表面上形成的薄层（1）的性质的方法，其特征在于它包括：在具有特定上表面（2）的纳米结构支撑件上形成至少一个薄层（1），以及用特定上表面（2）处理纳米结构支撑件以在支撑件中产生内部应变，使其至少在平面，以确保薄层的相应变形，以改变其性能。

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