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81. 发明申请

US20150355263A1 System and Method for Detecting Voltage Dependence in Insulation Systems Based on Harmonic Analysis 有权
标题翻译：基于谐波分析的绝缘系统电压依赖性检测系统及方法
公开(公告)号：US20150355263A1
公开(公告)日：2015-12-10
申请号：US14828339
申请日：2015-08-17
申请人： AVO Multi-Amp Corporation d/b/a Megger
发明人： Nils Peter Werelius , Mats Gunnar Ohlen
IPC分类号： G01R31/14 , G01R29/26
CPC分类号： G01R31/14 , G01R23/20 , G01R27/2617 , G01R29/26 , G01R31/12
摘要： A method of testing an insulation system is disclosed. The method comprises coupling a first test lead to a first conductor, the first conductor at least partly isolated by the insulation system and coupling a second test lead to a second conductor or a ground. The method further comprises applying a test signal to the first test lead, receiving a test response from the second test lead, and analyzing the test response from the second test lead to determine a harmonic content of the test response. The method further comprises, when the harmonic content is equal to or greater than a predetermined threshold, determining that the insulator system has non-linear properties.
摘要翻译：公开了一种测试绝缘系统的方法。该方法包括将第一测试导线耦合到第一导体，第一导体至少部分地由绝缘系统隔离并将第二测试导线耦合到第二导体或地面。该方法还包括将测试信号施加到第一测试引线，接收来自第二测试引线的测试响应，以及分析来自第二测试引线的测试响应，以确定测试响应的谐波含量。该方法还包括当谐波含量等于或大于预定阈值时，确定绝缘体系具有非线性特性。

82. 发明申请

US20150323576A1 ELECTROCHROMIC CELL FOR RADIO-FREQUENCY APPLICATIONS 审中-公开
标题翻译：用于无线电频率应用的电致感细胞
公开(公告)号：US20150323576A1
公开(公告)日：2015-11-12
申请号：US14272190
申请日：2014-05-07
申请人： Alcatel-Lucent
发明人： Senad Bulja , Rose F. Kopf
IPC分类号： G01R27/06 , G01R27/28 , H01P3/00
CPC分类号： H01P5/028 , G01R27/06 , G01R27/2617 , G01R27/28 , H01P3/006
摘要： A disclosed electrical cell enables experimental measurements of dielectric properties of an electrochromic material in the radio-frequency range of the electromagnetic spectrum. In an example embodiment, the electrical cell includes a layer of the electrochromic material under test that is sandwiched between a conducting base plane and a microstrip line. The conducting base plane and the microstrip line are electrically connected to a co-planar waveguide configured for application of superimposed DC-bias and RF-probe signals using a conventional probe station and a vector network analyzer. The S-parameters of the electrical cell measured in this manner can then be used, e.g., to obtain the complex dielectric constant of the electrochromic material under test as a function of frequency.
摘要翻译：所公开的电池能够对电磁光谱的射频范围内的电致变色材料的介电特性进行实验测量。在示例性实施例中，电池包括被夹在导电基面和微带线之间的被测电致变色材料层。导电基面和微带线电连接到配置为使用常规探针台和矢量网络分析仪施加叠加的DC偏置和RF探针信号的共平面波导。然后可以使用以这种方式测量的电池的S参数，例如获得作为频率的函数的被测电致变色材料的复介电常数。

83. 发明申请

US20150115982A1 Structures and Methds for Monitoring Dielectric Reliability With Through-Silicon Vias 有权
标题翻译：用于通过硅通孔监测介质可靠性的结构和元件
公开(公告)号：US20150115982A1
公开(公告)日：2015-04-30
申请号：US14068273
申请日：2013-10-31
申请人： International Business Machines Corporation
发明人： Fen Chen , Mukta G. Farooq , John A. Griesemer , Chandrasekharan Kothandaraman , John Matthew Safran , Timothy Dooling Sullivan
IPC分类号： G01B7/00 , G01R27/26 , H01L21/66
CPC分类号： G01R27/2605 , G01R27/2617 , G01R31/2856 , G01R31/2884 , H01L22/14 , H01L22/34
摘要： Embodiments of the present invention provide a variety of structures and method for detecting abnormalities in the back-end-of-line (BEOL) stack and BEOL structures located in close proximity to through-silicon vias (TSVs) in a 3D integrated chip. The detected abnormalities may include stress, strain, and damage that will affect metallization continuity, interfacial integrity within a metal level, proximity accuracy of the TSV placement, and interlevel dielectric integrity and metallization-to-TSV dielectric integrity. Additionally, these structures in conjunction with each other are capable of determining the range of influence of the TSV. That is, how close to the TSV that a BEOL line (or via) needs to be in order to be influenced by the TSV.
摘要翻译：本发明的实施例提供了用于检测位于紧邻3D集成芯片中的硅通孔（TSV）的后端行（BEOL）堆叠和BEOL结构中的异常的各种结构和方法。检测到的异常可能包括将影响金属化连续性，金属层内的界面完整性，TSV放置的接近精度以及层间电介质完整性和金属化至TSV电介质完整性的应力，应变和损伤。另外，这些结构彼此结合能够确定TSV的影响范围。也就是说，BEV线（或通路）需要为TSV所影响的TSV的接近程度。

84. 发明申请

US20120098554A1 METHOD AND DEVICE FOR MEASURING PERMITTIVITY AND/OR PERMEABILITY 有权
标题翻译：用于测量渗透性和/或渗透性的方法和装置
公开(公告)号：US20120098554A1
公开(公告)日：2012-04-26
申请号：US13256294
申请日：2010-03-02
申请人： Ludovic Fourneaud , Laurent Dussopt
发明人： Ludovic Fourneaud , Laurent Dussopt
IPC分类号： G01R27/08
CPC分类号： G01R27/2617 , G01N22/00
摘要： The invention relates to a method for measuring the permittivity and/or perviousness of a sample of a nonconductive material, said method comprising: a) measuring (94) a value representative of an admittance Ytestco, measuring a (98) a value representative of an admittance Ytestcc only from the amplitude and the phase of the electromagnetic waves reflected onto an interface between the sample and the end of a second waveguide having at least one conductive web separated from a conductive sheath by a layer of dielectric material, said second waveguide also including a short circuit between the central web and the sheath at the interface with the sample, and c) calculating (100) the permittivity of the sample from the values representative of the admittances Ytestco and Ytestcc and/or calculating (100) the perviousness of the sample from the values representative of the admittances Ytestco and Ytestcc.
摘要翻译：本发明涉及一种用于测量非导电材料样品的介电常数和/或渗透性的方法，所述方法包括：a）测量（94）代表导纳Ytestco的值，测量（98）代表导纳Ytestcc仅从反射到样品与具有至少一个导电网的第二波导的界面上的界面上的电磁波的振幅和相位，该导电纤维通过介电材料层与导电护套分离，所述第二波导还包括在与样品的界面处在中心网和护套之间的短路，以及c）从代表导体Ytestco和Ytestcc的值计算（100）样品的介电常数和/或计算（100）从代表Ytestco和Ytestcc的价值的样本。

85. 发明授权

US08106663B2 Sensor product for electric field sensing 有权
标题翻译：传感器产品用于电场感测
公开(公告)号：US08106663B2
公开(公告)日：2012-01-31
申请号：US12796227
申请日：2010-06-08
申请人： Timo Joutsenoja , Kari Kyyny
发明人： Timo Joutsenoja , Kari Kyyny
IPC分类号： G01R29/12 , H03M11/00 , G06F3/041
CPC分类号： G06F3/044 , G01R19/145 , G01R27/2617 , G06F2203/04103 , G06F2203/04111
摘要： A sensor product web for electric field sensing. The sensor includes a substrate, sequential electrically conductive areas on a surface of the substrate, conductors, an output connected to one of the electrically conductive areas by one of the conductors, a dielectric layer arranged on top of the conductors, and an electrically conductive layer arranged on top of the dielectric layer on a same surface of the substrate as the electrically conductive areas, the dielectric layer being discontinuous at the conductor which is in contact with the electrically conductive area.
摘要翻译：用于电场感测的传感器产品网。传感器包括衬底，衬底的表面上的顺序导电区域，导体，通过导体之一连接到导电区域中的一个的输出，布置在导体顶部上的电介质层和导电层布置在与导电区域相同的基板的表面上的电介质层的顶部上，电介质层在与导电区域接触的导体处不连续。

86. 发明授权

US08044665B2 Sensor product for electric field sensing 有权
标题翻译：传感器产品用于电场感测
公开(公告)号：US08044665B2
公开(公告)日：2011-10-25
申请号：US11631893
申请日：2005-07-05
申请人： Timo Joutsenoja , Kari Kyyny
发明人： Timo Joutsenoja , Kari Kyyny
IPC分类号： G01R29/12 , H03M11/00 , G06F3/041
CPC分类号： G06F3/044 , G01R19/145 , G01R27/2617 , G06F2203/04103 , G06F2203/04111
摘要： A sensor product for electric field sensing. The sensor includes a substrate, at least one electrically conductive area on the surface of the substrate, an output, and at least one conductor between the at least one electrically conductive area and the output. Also a sensor product web.
摘要翻译：用于电场感测的传感器产品。传感器包括衬底，衬底的表面上的至少一个导电区域，输出端以及至少一个导电区域和输出之间的至少一个导体。还有传感器产品网。

87. 发明申请

US20100244810A1 SENSOR PRODUCT FOR ELECTRIC FIELD SENSING 有权
标题翻译：传感器产品用于电场感应
公开(公告)号：US20100244810A1
公开(公告)日：2010-09-30
申请号：US12796227
申请日：2010-06-08
申请人： Timo JOUTSENOJA , Kari Kyyny
发明人： Timo JOUTSENOJA , Kari Kyyny
IPC分类号： G01R31/02
CPC分类号： G06F3/044 , G01R19/145 , G01R27/2617 , G06F2203/04103 , G06F2203/04111
摘要： A sensor product web for electric field sensing. The sensor includes a substrate, sequential electrically conductive areas on a surface of the substrate, conductors, an output connected to one of the electrically conductive areas by one of the conductors, a dielectric layer arranged on top of the conductors, and an electrically conductive layer arranged on top of the dielectric layer on a same surface of the substrate as the electrically conductive areas, the dielectric layer being discontinuous at the conductor which is in contact with the electrically conductive area.
摘要翻译：用于电场感测的传感器产品网。传感器包括衬底，衬底的表面上的顺序导电区域，导体，通过导体之一连接到导电区域中的一个的输出，布置在导体顶部上的电介质层和导电层布置在与导电区域相同的基板的表面上的电介质层的顶部上，电介质层在与导电区域接触的导体处不连续。

88. 发明申请

US20100176824A1 MEASURING APPARATUS AND MEASURING METHOD 有权
标题翻译：测量装置和测量方法
公开(公告)号：US20100176824A1
公开(公告)日：2010-07-15
申请号：US12664840
申请日：2008-07-31
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： G01R27/26
CPC分类号： G01R27/2617 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A measuring unit applies a dc voltage causing an inversion layer to be formed on an interface between a semiconductor substrate and an insulating film to the semiconductor substrate while changing a change speed of a level of the dc voltage, and measures a current flowing through the insulating film. An arithmetic unit obtains a straight line showing a relationship between the current flowing through the insulating film and the change speed of the dc voltage on the basis of a relationship between the current measured by the measuring unit and the dc voltage, and calculates a slope of the obtained straight line as surface capacitance of the insulating film. The arithmetic unit calculates permittivity of the insulating film on the basis of the calculated surface capacitance, an area of contact between a probe and the insulating film and a thickness of the insulating film.
摘要翻译：测量单元在改变直流电压电平的变化速度的同时，向半导体衬底施加导致在半导体衬底和绝缘膜之间的界面上形成的反型层的直流电压，并测量流过绝缘体的电流电影。算术单元根据由测量单元测得的电流与直流电压之间的关系，获得表示流过绝缘膜的电流与直流电压的变化速度之间的关系的直线，并且计算斜率所获得的直线作为绝缘膜的表面电容。算术单元根据计算出的表面电容，探针和绝缘膜之间的接触面积和绝缘膜的厚度来计算绝缘膜的介电常数。

89. 发明授权

US07199593B2 Apparatus and methods for measuring parasitic capacitance and inductance of I/O leads on an electrical component using a network analyzer 有权
标题翻译：使用网络分析仪测量电气元件上I / O引脚的寄生电容和电感的装置和方法
公开(公告)号：US07199593B2
公开(公告)日：2007-04-03
申请号：US11083506
申请日：2005-03-18
申请人： Mark T. Van Horn , Richard N. Hedden , David R. Cuthbert , Aaron M. Schoenfeld
发明人： Mark T. Van Horn , Richard N. Hedden , David R. Cuthbert , Aaron M. Schoenfeld
IPC分类号： G01R27/26 , G01R31/26
CPC分类号： G01R31/04 , G01R1/0408 , G01R1/06772 , G01R27/2617 , G01R31/2896 , H01L24/73 , H01L2224/32013 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48253 , H01L2224/4847 , H01L2224/73265 , H01L2924/01087 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： Apparatus and methods are provided for measuring the potential for mutual coupling in an integrated circuit package of any type or configuration using a network analyzer in conjunction with a coaxial test probe. Simple, low-cost test fixturing and methods of testing may be used to measure the parasitic capacitance and inductance of one or more I/O leads of an integrated circuit package, the measured parasitic capacitances and inductances providing an indication of the susceptibility of the integrated circuit package to mutual coupling between electrical leads of the package or between an electrical lead and other components of the integrated circuit package.
摘要翻译：提供了装置和方法，用于使用网络分析仪结合同轴测试探针来测量任何类型或配置的集成电路封装中的互耦合的可能性。简单，低成本的测试夹具和测试方法可用于测量集成电路封装的一个或多个I / O引线的寄生电容和电感，所测量的寄生电容和电感提供了集成电路的易感性指示电路封装以在封装的电引线之间或电引线和集成电路封装的其它部件之间相互耦合。

90. 发明授权

US07145323B2 Apparatus for measuring parasitic capacitance and inductance of I/O leads on an electrical component using a network analyzer 失效
公开(公告)号：US07145323B2
公开(公告)日：2006-12-05
申请号：US10925337
申请日：2004-08-23
申请人： Mark T. Van Horn , Richard N. Hedden , David R. Cuthbert , Aaron M. Schoenfeld
发明人： Mark T. Van Horn , Richard N. Hedden , David R. Cuthbert , Aaron M. Schoenfeld
IPC分类号： G01R31/02 , G01R31/28
CPC分类号： G01R31/04 , G01R1/0408 , G01R1/06772 , G01R27/2617 , G01R31/2896 , H01L24/73 , H01L2224/32013 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48253 , H01L2224/4847 , H01L2224/73265 , H01L2924/01087 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： Apparatus and methods are provided for measuring the potential for mutual coupling in an integrated circuit package of any type or configuration using a network analyzer in conjunction with a coaxial test probe. Simple, low-cost test fixturing and methods of testing may be used to measure the parasitic capacitance and inductance of one or more I/O leads of an integrated circuit package, the measured parasitic capacitances and inductances providing an indication of the susceptibility of the integrated circuit package to mutual coupling between electrical leads of the package or between an electrical lead and other components of the integrated circuit package.

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