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81. 发明授权

US4619811A Apparatus for growing GaAs single crystal by using floating zone 失效
标题翻译：通过使用浮动区域生长GaAs单晶的装置
公开(公告)号：US4619811A
公开(公告)日：1986-10-28
申请号：US777004
申请日：1985-09-17
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： C25D11/04 , C30B13/00 , C30B13/08 , C30B13/20 , C30B29/42 , H01L21/18 , C30B13/28 , C30B35/00
CPC分类号： C30B13/20 , C30B13/00 , C30B13/08 , C30B29/42 , Y10T117/1008 , Y10T117/1088
摘要： An apparatus for growing a GaAs single crystal by relying on the floating zone technique in a cylinder charged with a GaAs polycrystal and a GaAs single seed crystal, comprising an As container communicating with the interior of the cylinder to supply an optimum vapor pressure of As into the cylinder under the condition that a continuous temperature variation is established between this As container and the GaAs crystals charged in the cylinder, whereby a GaAs single crystal having little deviation from stoichiometry and having a good crystal perfection is obtained.
摘要翻译：通过依靠浮置区技术在装有GaAs多晶体和GaAs单晶种的圆柱体中生长GaAs单晶的装置，包括与气缸内部连通的As容器，以将As的最佳蒸气压提供给在该As容器和装载在气缸中的GaAs晶体之间建立连续的温度变化的条件下，获得具有与化学计量偏差小并且具有良好的晶体完整性的GaAs单晶。

82. 发明授权

US4361716A Current lead-in of the coaxial type for sealing to a container wall 失效
标题翻译：用于密封到容器壁的同轴型的电流引入
公开(公告)号：US4361716A
公开(公告)日：1982-11-30
申请号：US147748
申请日：1980-05-08
申请人： Wolfgang Keller
发明人： Wolfgang Keller
IPC分类号： H05B6/30 , C30B13/20 , H05B9/00 , B01J17/08 , H01B17/26
CPC分类号： C30B13/20
摘要： Current lead-in of the coaxial type, including at least two conducting tubes passing through a container wall, a gas-tight seal disposed between the tubes and the walls, an induction heating coil supplied with high frequency current from the tubes for producing a melting zone in a semiconductor rod, and a pressure-deformable electrically-insulating tension element disposed between the tubes. The tubes are in the form of an inner end and an outer tube. A pressure plate and a ring are disposed near one end of the inner tube, a ceramic tube surrounds the inner tube between the ring and the tension elements, and a ceramic ring stop is disposed at the other end of the inner tube. The ceramic tube and tension element have smaller outside diameters than the ring and stop and they are surrounded by the outer tube. Pressure is applied to the tension element by screws in the pressure plate or by a nut screwed onto the inner tube.
摘要翻译：同轴类型的电流引入，包括通过容器壁的至少两个导电管，设置在管和壁之间的气密密封件，从管提供高频电流的感应加热线圈，用于产生熔化并且设置在管之间的可压力变形的电绝缘张力元件。管子是内端和外管的形式。压力板和环设置在内管的一端附近，陶瓷管围绕环和张力元件之间的内管，陶瓷环形止动件设置在内管的另一端。陶瓷管和张力元件的外径小于环和止动件，并且它们被外管包围。压力通过压板中的螺钉或拧在内管上的螺母施加到张力元件上。

83. 发明授权

US4275035A Apparatus for electrical feed of a heater in a crystal-growing vessel 失效
标题翻译：用于在晶体生长容器中供电加热器的装置
公开(公告)号：US4275035A
公开(公告)日：1981-06-23
申请号：US866044
申请日：1977-12-30
申请人： Maria R. Leonhardt
发明人： Maria R. Leonhardt
IPC分类号： C30B13/20 , C30B15/14
CPC分类号： C30B13/20 , C30B15/14 , Y10S117/90 , Y10T117/1092
摘要： Apparatus for growing crystals comprising a vessel having a heater therein connected to electrical feed lines which extend from the vessel through a feed housing to an electrical supply source. The electrical feed line comprises inner and outer conductors which are electrically insulated through the provision of an intermediate electrically insulative conductor, the entire assembly being sealed separately for passage through the feed housing to the vessel.
摘要翻译：用于生长晶体的装置包括其中具有加热器的容器，其连接到从容器延伸通过进料壳体到电源的电气馈送线。电馈线包括通过提供中间电绝缘导体而电绝缘的内导体和外导体，整个组件被分开密封，以通过馈电壳体到达容器。

84. 发明授权

US4184135A Breakapart single turn RF induction apparatus 失效
标题翻译： Breakapart单圈射频感应装置
公开(公告)号：US4184135A
公开(公告)日：1980-01-15
申请号：US894884
申请日：1978-04-10
申请人： Kedar P. Gupta , J. W. Thousand, Jr.
发明人： Kedar P. Gupta , J. W. Thousand, Jr.
IPC分类号： C30B13/20 , H01F5/00 , H05B6/36 , H01F27/28 , H05B5/08
CPC分类号： H01F5/00 , C30B13/20 , H05B6/362
摘要： A breakapart single turn RF induction coil suitable for use in zone refining production of large diameter semiconductor rods is described wherein the coil is engagable and disengagable from mounted semiconductor rods without breaking the rod or mounting welds. The work coil consists of two spaced apart sections; however connected at one or both ends of a slit formed between the two sections with current and coolant flow through the connection means on the outer peripheral of the sections. The arrangement affords the use of a single turn coil having the capacity for removal from a float zone without disruption of the semiconductor rod mounting.
摘要翻译：描述了适合用于大直径半导体棒的区域精炼生产的断裂单匝RF感应线圈，其中线圈可与安装的半导体棒接合并脱离，而不破坏杆或安装焊缝。工作线圈由两个间隔开的部分组成; 然而连接在形成在两个部分之间的狭缝的一端或两端，电流和冷却剂流过部分外周上的连接装置。该布置提供了使用具有从浮动区域移除的能力的单匝线圈而不破坏半导体棒安装。

85. 发明授权

US4107448A Method and device for crucible-free floating zone melting 失效
标题翻译：无坩埚浮区熔化的方法和装置
公开(公告)号：US4107448A
公开(公告)日：1978-08-15
申请号：US704639
申请日：1976-07-12
申请人： Hans Stut
发明人： Hans Stut
IPC分类号： C30B13/20 , C30B13/28 , C30B13/30 , B01J17/08
CPC分类号： C30B13/30 , C30B13/20 , C30B13/28
摘要： By coupling the molten zone of a semiconductor rod, which is subjected to a crucible-free zone melting operation, to the operating coil used for inductively heating the molten zone, the frequency of the generator energizing the coil is determined. At constant geometry, this frequency is a measure of the molten zone volume and can be used for control purposes. A high-frequency cable disposed between the generator and the operating coil is fully matched, so that substantially only effective power has to be transmitted.
摘要翻译：通过将经受无坩埚区域熔融操作的半导体棒的熔融区域耦合到用于感应加热熔融区域的操作线圈，确定对线圈通电的发电机的频率。在恒定的几何形状下，该频率是熔融区域体积的量度，可用于控制目的。设置在发电机和操作线圈之间的高频电缆完全匹配，使得仅基本上只有有效的功率必须被传输。

86. 发明授权

US3985947A Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods 失效
标题翻译：可结晶棒特别是半导体棒无坩埚区熔化的装置和方法
公开(公告)号：US3985947A
公开(公告)日：1976-10-12
申请号：US572966
申请日：1975-04-30
申请人： Wolfgang Keller
发明人： Wolfgang Keller
IPC分类号： H05B6/32 , C01B33/02 , C30B13/20 , C30B15/14 , H01B7/29 , H01B11/18 , H01L21/208 , H05B6/30 , H05B6/42 , H05B5/00
CPC分类号： H01B7/29 , C30B13/20 , C30B15/14 , H01B11/1882 , H05B6/30 , H05B6/42 , Y10T117/1084 , Y10T117/1088
摘要： A device for crucible free zone melting on crystallizable rods, in particular on semiconductor rods, in which the molten zone is produced in the rod which is to be treated, by the electromagnetic field of an induction heating coil which surrounds the rod in annular fashion and at a distance, in which the induction heating coil is supplemented by a parallel-connected capacitor to form an electric heating oscillatory circuit, and in which the oscillatory heating circuit is fed via a high frequency line and at least one adjustable coupling element by a high frequency generator which supplies an a.c. voltage of adjustable frequency. Circuit components are provided between the output of the high frequency generator and the electric heating oscillatory circuit which contains the induction heating coil; at least the high frequency line of such components is equipped with a channel which conducts a flowing coolant.
摘要翻译：一种用于在可结晶棒上，特别是在半导体棒上的无坩埚区熔化的装置，其中在待处理的棒中通过感应加热线圈的电磁场以环形方式围绕该杆而产生熔融区，在距离处，其中感应加热线圈由并联电容器补充以形成电加热振荡电路，并且其中振荡加热电路经由高频线路和至少一个可调节的耦合元件馈送高电平频率发生器电压可调频率。电路部件设置在高频发生器的输出端和包含感应加热线圈的电加热振荡电路之间; 这些部件的至少高频线路配备有传导流动的冷却剂的通道。

87. 发明授权

US3939035A Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density 失效
标题翻译：制造具有可调位错密度的单晶半导体材料，特别是硅的方法
公开(公告)号：US3939035A
公开(公告)日：1976-02-17
申请号：US462936
申请日：1974-04-22
申请人： Wolfgang Keller
发明人： Wolfgang Keller
IPC分类号： C30B13/20 , C30B13/28 , B01J17/18
CPC分类号： C30B13/20 , C30B13/28
摘要： A method for obtaining a homogeneous dislocation density in a semiconductor rod, by first subjecting the semiconductor rod in a known manner, to a crucible-free zone melting process whereby it becomes monocrystalline and free of dislocations, and thereafter an annealing zone is moved through the rod, under specified conditions.
摘要翻译：通过首先使半导体棒以已知的方式进行无坩埚区熔融处理，从而获得半导体棒中的均匀位错密度的方法，由此其变为单晶并且没有位错，然后退火区移动通过杆，在规定的条件下。

88. 发明授权

US3936346A Crystal growth combining float zone technique with the water cooled RF container method 失效
标题翻译：水晶生长结合浮法技术与水冷RF容器法
公开(公告)号：US3936346A
公开(公告)日：1976-02-03
申请号：US428266
申请日：1973-12-26
申请人： William W. Lloyd
发明人： William W. Lloyd
IPC分类号： C30B13/20 , C30B15/02 , C30B15/10 , C30B15/14 , B01J17/10
CPC分类号： C30B15/02 , C30B13/20 , C30B15/10 , C30B15/14 , Y10S117/90
摘要： The disclosure relates to the growth of single crystal material from polycrystalline material by combining the pedestal and cold crucible techniques to yield a method of producing large, high purity single crystals on a commercial scale. The method includes feeding a bar of polycrystalline material, such as silicon, into a cold cage which can be a cold silver crucible or the like having an aperture in the bottom thereof to permit insertion of the polycrystalline feed bar. An RF coil surrounds the cold cage and melts the silicon as it reaches into the cage, the RF coil providing a temperature to the silicon material which is slightly above the melting point thereof. A rod of single crystal material, the same as the feed bar, is positioned in the melt from the top surface of the cold cage and acts as a seed crystal. The single crystal rod is then pulled upwardly from the cage while polycrystalline silicon is fed into the cage through the aperture in the bottom thereof. By continuously forcing the polycrystalline rod into the cage and pulling a rod at the top of the cage, a large single crystal can be grown while maintaining only a small melt volume. The diameter of the single crystal rod being pulled will have a relation to the upper diameter of the cold cage as well as the ratio of the feed rate of the polycrystalline bar relative to the pull rate of the single crystalline bar.
摘要翻译：本公开涉及通过组合基座和冷坩埚技术从多晶材料生长单晶材料，以产生在商业规模上生产大的高纯度单晶的方法。该方法包括将诸如硅的多晶材料棒放入冷笼中，该冷笼可以是在其底部具有孔的冷银坩埚等以允许多晶进料棒的插入。 RF线圈围绕冷笼并在硅到达保持架时熔化硅，RF线圈向硅材料提供略高于其熔点的温度。与进料棒相同的单晶材料棒从冷笼的顶表面定位在熔体中并用作晶种。然后将单晶棒从保持架向上拉，而多晶硅通过其底部的孔进入保持架。通过将多晶棒连续地强制进入保持架并拉动保持架顶部的杆，可以生长大的单晶，同时只保持较小的熔体体积。被拉动的单晶棒的直径将与冷笼的上直径以及多晶棒的进料速率相对于单晶棒的拉伸速率的比率有关。

89. 发明授权

US3898413A Induction heat coil arrangement 失效
标题翻译：感应加热线圈布置
公开(公告)号：US3898413A
公开(公告)日：1975-08-05
申请号：US46053874
申请日：1974-04-12
申请人： SIEMENS AG
发明人： KELLER WOLFGANG
IPC分类号： H05B6/32 , C30B13/20 , H01L21/208 , H05B6/36 , H05B5/08
CPC分类号： H05B6/362 , C30B13/20
摘要： An induction heat coil arrangement, in particular an apparatus for the crucible-free zone melt treatment of a semiconductor rod, including at least two hollow turns with a conduit for guiding a heatexchange fluid contained therein. The outer turn comprises a bent metal tube which is provided with a heat-resistant insulator sleeve to avoid arcings which are detrimental to the induction heat coil arrangement itself as well as to the quality of the semiconductor rod.
摘要翻译：一种感应加热线圈装置，特别是一种用于无坩埚区熔融处理半导体棒的装置，包括至少两个空心匝，其中导管用于引导其中包含的热交换流体。外圈包括弯曲的金属管，该金属管设置有耐热绝缘套管，以避免对感应加热线圈装置本身有害的电弧以及半导体棒的质量。

90. 发明授权

US3886509A Adjustable induction coil for zone melting of semiconductor rods 失效
标题翻译：可调电感线圈用于半导体器件的区域熔化
公开(公告)号：US3886509A
公开(公告)日：1975-05-27
申请号：US43583774
申请日：1974-01-23
申请人： SIEMENS AG
发明人： KELLER WOLFGANG
IPC分类号： C30B13/20 , H05B6/30 , H05B6/36 , H05B6/42 , H01F27/28
CPC分类号： C30B13/20 , H05B6/30 , H05B6/362 , H05B6/42
摘要： A readily disassembleable and easily producible induction coil useful in crucible-free floating melt zone treatment of semiconductor rods comprised of a single or multi-turn induction coil provided with a separable ring-shaped insert which has onehalf thereof rigidly attached to an inner surface of the coil and another half separably attached to the first half with the end surfaces of the insert halves being located perpendicularly to the plane of the coil. A conduit is disposed within the insert for guiding a heat-exchange fluid therethrough.

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