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81. 发明申请

US20120055403A1 MOUNTING TABLE STRUCTURE, FILM FORMING APPARATUS AND RAW MATERIAL RECOVERY METHOD 有权
标题翻译：安装表结构，电影成型装置和原材料回收方法
公开(公告)号：US20120055403A1
公开(公告)日：2012-03-08
申请号：US13225049
申请日：2011-09-02
申请人： Atsushi GOMI , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga , Chiaki Yasumuro
发明人： Atsushi GOMI , Yasushi Mizusawa , Tatsuo Hatano , Masamichi Hara , Kaoru Yamamoto , Satoshi Taga , Chiaki Yasumuro
IPC分类号： C23C16/458 , C23C16/455 , C23C16/46
CPC分类号： H01L21/68785 , C23C16/4404 , C23C16/4412 , C23C16/4585 , C23C16/4586 , H01L21/67109
摘要： Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.
摘要翻译：提供了一种用于在安装在安装台结构上的目标物体的表面上通过在处理室中使用包含有机金属化合物的原料气体来形成薄膜的安装台结构。安装台结构包括：安装台主体，其安装在其上并具有加热器; 以及基部，其在围绕安装台主体的侧表面和底表面的同时支撑安装台主体，底座具有冷却剂流过其中并且保持在高于凝固温度的温度的冷却剂路径，原料气体的液化温度低于原料气体的分解温度。

82. 发明申请

US20120009355A1 METHOD AND APPARATUS FOR STABILIZING A COATING 审中-公开
标题翻译：用于稳定涂料的方法和装置
公开(公告)号：US20120009355A1
公开(公告)日：2012-01-12
申请号：US13234682
申请日：2011-09-16
申请人： Steven M. Gasworth , Michael R. Haag , Scott Corneillie
发明人： Steven M. Gasworth , Michael R. Haag , Scott Corneillie
IPC分类号： C23C16/54 , H05H1/24
CPC分类号： C23C16/513 , C23C16/4404
摘要： A method and apparatus for stabilizing an incidental coating in a substrate coating apparatus is provided. The method includes defining interior surfaces of a coating zone in the substrate coating apparatus. The method may include preheating interior surfaces to a local preheat temperature that is approximately equal to a local coating temperature attained by the surfaces during coating of a substrate, at least partially defining the interior surfaces with a compliant fabric, or at least partially defining the interior surfaces with a compliant fabric and preheating the interior surfaces.
摘要翻译：提供了一种用于稳定衬底涂覆装置中的附带涂层的方法和装置。该方法包括限定衬底涂覆设备中的涂层区域的内表面。该方法可以包括将内表面预热到局部预热温度，其近似等于在涂覆基材期间由表面获得的局部涂层温度，至少部分地用柔顺织物限定内表面，或至少部分地限定内部表面与柔顺织物并预热内表面。

83. 发明授权

US08075692B2 Fluid bed reactor 有权
标题翻译：流化床反应器
公开(公告)号：US08075692B2
公开(公告)日：2011-12-13
申请号：US12948557
申请日：2010-11-17
申请人： E. Wayne Osborne , Michael V. Spangler , Levi C. Allen , Robert J. Geertsen , Paul E. Ege , Walter J. Stupin , Gerald Zeininger
发明人： E. Wayne Osborne , Michael V. Spangler , Levi C. Allen , Robert J. Geertsen , Paul E. Ege , Walter J. Stupin , Gerald Zeininger
IPC分类号： C23C16/455 , C23C16/442 , C23F1/00 , H01L21/306 , C23C16/22 , C23C16/06
CPC分类号： C23C16/442 , C23C16/24 , C23C16/4404 , C23C16/4417 , C23C16/45576 , H01L21/02532 , H01L21/0262 , Y10S118/05
摘要： Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.
摘要翻译：公开了用于生产高纯度硅涂覆颗粒的流化床反应器系统。容器具有外壁，外壁向内的绝缘层，位于绝缘层内部的至少一个加热器，位于加热器内部的可移除的同心衬套，中心入口喷嘴，多个流化喷嘴，至少一个冷却气体喷嘴和至少一个产品出口。系统可以包括衬套内部的可移除的同心套筒。在特定系统中，中心入口喷嘴构造成在反应器室中心地产生主气体垂直羽流，以最小化反应器表面上的硅沉积。

84. 发明申请

US20110220285A1 METHODS AND SYSTEMS FOR TEXTURING CERAMIC COMPONENTS 审中-公开
标题翻译：陶瓷组件的方法和系统
公开(公告)号：US20110220285A1
公开(公告)日：2011-09-15
申请号：US13025627
申请日：2011-02-11
申请人： Cheng-Tsin Lee , Ho Ouk , Gary D. Harland , Edward Tomasek
发明人： Cheng-Tsin Lee , Ho Ouk , Gary D. Harland , Edward Tomasek
IPC分类号： B05D7/00 , C23C16/44 , C23F1/08 , H01L21/00 , B05D1/02 , B05D1/28 , B05D3/02 , C23C4/08 , C23C4/10 , C23C26/00
CPC分类号： C04B41/52 , C04B41/009 , C04B41/4539 , C04B41/87 , C04B41/89 , C23C14/564 , C23C16/4404 , C23C16/4581 , C04B41/5027 , C04B41/4527 , C04B41/5031 , C04B41/5042 , C04B41/522 , C04B41/5045 , C04B41/5155 , C04B41/4572 , C04B41/5029 , C04B35/00 , C04B35/10 , C04B35/48
摘要： Embodiments of the present invention provide methods for forming a hardened and roughened ceramic component. Specific steps include forming a sintered ceramic component, texturing the surface of the sintered ceramic component, and firing the component to harden it. The resulting ceramic component may have a textured surface, and in a specific embodiment, the textured surface has a roughness of about 100 to about 2000 μin Ra.
摘要翻译：本发明的实施例提供了形成硬化和粗糙化陶瓷部件的方法。具体步骤包括形成烧结陶瓷组分，对烧结的陶瓷组分的表面进行纹理化，并烧制组分以使其硬化。所得到的陶瓷部件可以具有纹理表面，并且在具体实施例中，纹理表面具有约100至约2000μinRa的粗糙度。

85. 发明授权

US07993705B2 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US07993705B2
公开(公告)日：2011-08-09
申请号：US11819500
申请日：2007-06-27
申请人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
发明人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
IPC分类号： C23C16/56 , C23C16/00 , C23C16/54 , B08B7/00 , B08B7/04
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.
摘要翻译：使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。

86. 发明申请

US20110114114A1 CLEANING METHOD OF APPARATUS FOR DEPOSITING CARBON CONTAINING FILM 审中-公开
标题翻译：用于沉积含有碳膜的装置的清洁方法
公开(公告)号：US20110114114A1
公开(公告)日：2011-05-19
申请号：US13054072
申请日：2008-07-14
申请人： Dong-Ho You , Jung-Work Lee
发明人： Dong-Ho You , Jung-Work Lee
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , C23C16/4404
摘要： A dry cleaning method of an apparatus for depositing a carbon-containing film is provided. The method includes in-situ cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor. In the method, a by-product in a solid form is not generated, and in-situ cleaning can be performed without stopping the apparatus for depositing a carbon-containing film after a predetermined amount of wafers are treated, such that productivity of the apparatus for depositing a carbon-containing film can be maximized.
摘要翻译：提供了一种用于沉积含碳膜的设备的干洗方法。该方法包括原位清洁设备的反应器的内部，其中清洁设备的反应器的内部包括：通过使用远程等离子体发生器向反应器供应包括卤素的清洁气体并同时供应除去活性炭的气体。在该方法中，不产生固体形式的副产物，并且可以在预定量的晶片被处理之后不停止用于沉积含碳膜的装置的原位清洗，使得装置的生产率用于沉积含碳膜可以最大化。

87. 发明申请

US20110111128A1 DIFFUSER STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：扩散器结构及其制造方法
公开(公告)号：US20110111128A1
公开(公告)日：2011-05-12
申请号：US12762335
申请日：2010-04-18
申请人： BYUNG-JUN PARK , Jin-jong Su , Fang-yu Liu
发明人： BYUNG-JUN PARK , Jin-jong Su , Fang-yu Liu
IPC分类号： B05D3/10 , C23C16/54
CPC分类号： C23C16/4404 , C23C16/45565 , Y10T29/49826
摘要： A diffuser structure and a manufacturing method thereof are disclosed. The diffuser structure includes a substrate, a plurality of throughholes, and a glue layer. The throughholes are perpendicularly formed in the substrate. Each throughhole includes a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part to the gas-out part. The glue layer is formed on a side wall of each gas-out part, and a thickness of the glue layer is between 1 μm and 11 μm. The present invention can solve a problem that particles are periodically generated after a periodic self-cleaning function is implemented in a plasma-enhanced chemical vapor deposition system.
摘要翻译：公开了一种扩散器结构及其制造方法。扩散器结构包括基底，多个通孔和胶层。通孔垂直地形成在基板中。每个通孔包括气体部分，气体输出部分和用于将气体部分连接到气体输出部分的连接部分。胶层在每个气出部分的侧壁上形成，胶层的厚度在1μm至11μm之间。本发明可以解决在等离子体增强化学气相沉积系统中实现周期性自清洁功能之后周期性地产生颗粒的问题。

88. 发明授权

US07901508B2 Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor 有权
标题翻译：通过化学气相沉积法，在改性冷壁反应器中使用前体的方法，系统和装置，用于生长SiC及相关或类似材料
公开(公告)号：US07901508B2
公开(公告)日：2011-03-08
申请号：US11626387
申请日：2007-01-24
申请人： Yuri Makarov , Michael Spencer
发明人： Yuri Makarov , Michael Spencer
IPC分类号： C30B21/02
CPC分类号： C23C16/325 , C23C16/4404 , C23C16/46 , C30B25/00 , C30B29/36 , Y10S117/90 , Y10T117/10
摘要： An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CCl4 or halogenated hydrocarbons, CHCl3, CH2Cl2, CH3Cl, etc.), or introducing other chlorine-containing species in the gas phase in the growth chamber. The etching effect, proper ranges, and high temperature growth are also examined.
摘要翻译：这里描述了使用化学气相沉积（CVD）技术生长高质量外延碳化硅（SiC）膜和晶粒的方法。该方法包括在典型的冷壁CVD反应器的设计中的改进，在反应器体积中提供更好的温度均匀性和在衬底附近的低温梯度，以及提高碳化硅生长速率和改进的方法生长层的质量，使用含卤烃的前体（四氯化碳CCl 4或卤代烃，CHCl 3，CH 2 Cl 2，CH 3 Cl等），或在生长室中的气相中引入其它含氯物质。还检查了蚀刻效果，适当的范围和高温生长。

89. 发明授权

US07897205B2 Film forming method and film forming apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US07897205B2
公开(公告)日：2011-03-01
申请号：US11910983
申请日：2006-04-07
申请人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
发明人： Takatoshi Kameshima , Kohei Kawamura , Yasuo Kobayashi
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , C23C16/4581 , H01L21/02167 , H01L21/02274 , H01L21/3185
摘要： A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
摘要翻译：一种成膜方法的特征在于该方法具有将包括无机硅烷气体的处理气体引入到其中布置由包括金属氧化物的陶瓷构成的安装台的处理室中的步骤，所述处理室包括具有含硅非金属薄膜的所述安装台的表面; 将要处理的基板安装在预先涂覆有非金属薄膜的安装台上的步骤; 以及将含有有机硅烷气体的处理气体导入处理室，在安装在安装台上的基板的表面上形成含硅非金属薄膜的工序。

90. 发明申请

US20110041760A1 METHOD FOR THE PRODUCTION OF WATER-REACTIVE AL FILM AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER 审中-公开
标题翻译：水膜反渗膜生产方法及成膜室成型方法
公开(公告)号：US20110041760A1
公开(公告)日：2011-02-24
申请号：US12989974
申请日：2009-04-27
申请人： Yutaka Kadowaki , Tomoko Saitou , Keng Weng Lim , Katsuhiko Mushiake
发明人： Yutaka Kadowaki , Tomoko Saitou , Keng Weng Lim , Katsuhiko Mushiake
IPC分类号： B05C21/00 , C21D1/00 , B32B15/04
CPC分类号： C23C4/12 , C22C21/00 , C23C4/08 , C23C4/18 , C23C4/185 , C23C14/564 , C23C16/4404
摘要： Herein disclosed are a method for the production of a water-reactive Al film comprising the steps of melting a material which contains 4NAl or 5NAl as an Al raw material and added In in an amount ranging from 2 to 5% by mass on the basis of the mass of the Al raw material in such a manner that the composition of the material becomes uniform; thermally spraying the resulting molten material on the surface of a base material according to the flame spraying technique; and solidifying the sprayed molten material through quenching to thus form an Al film in which In is uniformly dispersed in Al crystalline grains; and a constituent member for a film-forming chamber, which is provided, on the surface, with the water-reactive Al film.
摘要翻译：本文公开了一种制备水反应性Al膜的方法，包括以下步骤：将含有4NA1或5NA1的材料作为Al原料熔化，并以基于2〜5质量％的量添加In Al原料的质量使得材料的组成变得均匀; 根据火焰喷涂技术将所得熔融材料热喷涂在基材表面上; 并通过淬火固化喷射的熔融材料，从而形成其中In均匀分散在Al晶粒中的Al膜; 以及在表面上设置有水反应性Al膜的成膜室的构成部件。

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