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81. 发明申请

US20080014725A1 DEPOSITION OVER MIXED SUBSTRATES USING TRISILANE 有权
标题翻译：使用TRISILANE的混合基板上的沉积
公开(公告)号：US20080014725A1
公开(公告)日：2008-01-17
申请号：US11843552
申请日：2007-08-22
申请人： Michael Todd
发明人： Michael Todd
IPC分类号： H01L21/20
CPC分类号： C23C16/0272 , B82Y10/00 , B82Y30/00 , C23C16/22 , C23C16/24 , C23C16/30 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/56 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/0243 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L21/02667 , H01L21/2257 , H01L21/28035 , H01L21/28044 , H01L21/28194 , H01L21/28525 , H01L21/28556 , H01L21/3185 , H01L21/32055 , H01L28/84 , H01L29/127 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66242 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/933
摘要： Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
摘要翻译：三氯硅烷用于化学气相沉积方法以在混合的基底上沉积含硅膜。这种方法在半导体制造中可用于提供各种优点，包括在异质表面上的均匀沉积，高沉积速率和更高的制造生产率。例如，形成异质结双极晶体管的基极区域，包括在单晶半导体表面和非晶绝缘区域上的同时沉积。

82. 发明授权

US07319068B2 Method of depositing low k barrier layers 有权
标题翻译：沉积低k阻挡层的方法
公开(公告)号：US07319068B2
公开(公告)日：2008-01-15
申请号：US11537928
申请日：2006-10-02
申请人： Li-Qun Xia , Ping Xu , Louis Yang
发明人： Li-Qun Xia , Ping Xu , Louis Yang
IPC分类号： H01L21/31
CPC分类号： H01L21/76835 , C23C16/325 , H01L21/0206 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/314 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
摘要翻译：提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层低k电介质材料的应用。

83. 发明申请

US20070281183A1 Film formation method, die, and method of manufacturing the same 审中-公开
标题翻译：成膜方法，模具及其制造方法
公开(公告)号：US20070281183A1
公开(公告)日：2007-12-06
申请号：US11802851
申请日：2007-05-25
申请人： Shigeru Hosoe , Hiroyuki Matsuda
发明人： Shigeru Hosoe , Hiroyuki Matsuda
IPC分类号： C23C16/00 , B32B9/00
CPC分类号： C23C16/325 , C23C16/042 , C23C16/56
摘要： An objective is to provide a film formation method with which a layer having reduced defects, a die obtained by the film formation method, and a method of manufacturing the die. Free carbons increase in the case of reducing hydrogen gas as a carrier gas, so that concave portions are generated and increased during the molding transfer surface process. It was commonly known that hydrogen gas employed for the thermal CVD was set to 2 moles, but it was found out that generation of concave portions was possible to be largely inhibited by setting hydrogen gas to at least 3 moles. However, a level of up to 8 moles is preferable in view of practical use, since dilution of the total raw material gas causes a decline of reaction speed in the case of too much increase of hydrogen gas, resulting in the low speed of film formation.
摘要翻译：目的是提供一种具有减少缺陷的层的成膜方法，通过成膜方法获得的管芯以及制造该管芯的方法。在还原氢气作为载气的情况下游离碳增加，从而在模塑转印表面处理过程中产生和增加凹部。通常已知将用于热CVD的氢气设定为2摩尔，但是发现通过将氢气设置为至少3摩尔可以极大地抑制凹部的产生。然而，考虑到实际应用，优选达8摩尔的水平，因为总原料气体的稀释导致在氢气过多增加的情况下反应速度的下降，导致成膜速度低。

84. 发明申请

US20070197007A1 Method for forming silicon-containing film and method for decreasing number of particles 有权
标题翻译：用于形成含硅膜的方法和减少颗粒数的方法
公开(公告)号：US20070197007A1
公开(公告)日：2007-08-23
申请号：US11358971
申请日：2006-02-21
申请人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
发明人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
IPC分类号： H01L21/20
CPC分类号： C23C16/325 , C23C16/345 , C23C16/402 , C23C16/4411 , H01L21/0217 , H01L21/02271 , H01L21/3145 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/3185
摘要： A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.
摘要翻译：描述了形成含硅膜的方法。将基板放置在反应室中，然后将含硅气体引入反应室中以进行CVD工艺，并在基板上沉积含硅膜。在CVD过程中，将反应室的至少顶部内表面的温度控制在低于50℃。

85. 发明申请

US20070141855A1 METHODS OF MODIFYING INTERLAYER ADHESION 失效
标题翻译：修改层间粘合的方法
公开(公告)号：US20070141855A1
公开(公告)日：2007-06-21
申请号：US11678752
申请日：2007-02-26
申请人： Francimar Schmitt , Li-Qun Xia , Son Nguyen , Shankar Venkataraman
发明人： Francimar Schmitt , Li-Qun Xia , Son Nguyen , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
摘要翻译：提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。

86. 发明授权

US07217323B2 Equipment and method for manufacturing silicon carbide single crystal 有权
标题翻译：制造碳化硅单晶的设备和方法
公开(公告)号：US07217323B2
公开(公告)日：2007-05-15
申请号：US10814179
申请日：2004-04-01
申请人： Naohiro Sugiyama , Yasuo Kitou , Emi Makino , Kazukuni Hara , Kouki Futatsuyama , Atsuto Okamoto
发明人： Naohiro Sugiyama , Yasuo Kitou , Emi Makino , Kazukuni Hara , Kouki Futatsuyama , Atsuto Okamoto
IPC分类号： C30B25/14
CPC分类号： C30B29/36 , C23C16/325 , C23C16/4412 , C23C16/45591 , C23C16/46 , C30B25/02 , C30B25/10 , C30B25/14 , C30B25/16 , Y10T117/10
摘要： A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.
摘要翻译：制造碳化硅单晶的方法包括以下步骤：将反应室中的晶种设置为晶种; 将原料气体引入到反应室中; 从基材生长碳化硅单晶; 在气流路径中从衬底的上游侧加热气体; 将衬底的温度保持在比气体低的预定温度，使得单晶从衬底生长; 在通过基板之后加热作为未反应的原料气体的一部分气体，并且不会造成晶体生长; 并且利用吸收体吸收未反应的原料气体中未反应的原料气体成分。

87. 发明申请

US20070102790A1 Process for deposition of semiconductor films 有权
公开(公告)号：US20070102790A1
公开(公告)日：2007-05-10
申请号：US11642167
申请日：2006-12-20
申请人： Michael Todd
发明人： Michael Todd
IPC分类号： H01L31/117 , H01L31/00 , H01L29/739
CPC分类号： C23C16/0272 , B82Y10/00 , B82Y30/00 , C23C16/22 , C23C16/24 , C23C16/30 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/36 , C23C16/56 , C30B25/02 , C30B29/06 , H01L21/02422 , H01L21/0243 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L21/02667 , H01L21/2257 , H01L21/28035 , H01L21/28044 , H01L21/28194 , H01L21/28525 , H01L21/28556 , H01L21/3185 , H01L21/32055 , H01L28/84 , H01L29/127 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66242 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10S438/933
摘要： Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, trisilane is employed to deposit SiGe-containing films that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

88. 发明申请

US20060246737A1 NEW LOW DIELECTRIC (LOW K) BARRIER FILMS WITH OXYGEN DOPING BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) 失效
标题翻译：通过等离子体增强化学蒸气沉积（PECVD）进行氧化的新型低介电（低K）阻挡膜
公开(公告)号：US20060246737A1
公开(公告)日：2006-11-02
申请号：US11426141
申请日：2006-06-23
申请人： Kang Yim , Melissa Tam , Dian Sugiarto , Chi-I Lang , Peter Lee , Li-Qun Xia
发明人： Kang Yim , Melissa Tam , Dian Sugiarto , Chi-I Lang , Peter Lee , Li-Qun Xia
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/76807 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
摘要翻译：提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。还提供了沉积氧掺杂的碳化硅阻挡层的方法。可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

89. 发明申请

US20060240630A1 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition 有权
标题翻译：通过化学气相沉积法制备替代性碳掺杂结晶含Si材料的方法
公开(公告)号：US20060240630A1
公开(公告)日：2006-10-26
申请号：US11343275
申请日：2006-01-30
申请人： Matthias Bauer , Keith Weeks , Pierre Tomasini , Nyles Cody
发明人： Matthias Bauer , Keith Weeks , Pierre Tomasini , Nyles Cody
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , C23C16/04 , C23C16/22 , C23C16/24 , C23C16/32 , C23C16/325 , C23C16/45512 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/32056 , H01L21/3215 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
摘要翻译：含有相对高含量的取代掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。可以获得非常高的取代掺入水平，包括含有2.4原子％或更高取代碳的晶体硅膜。通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

90. 发明申请

US20060205194A1 Methods of depositing electrically active doped crystalline Si-containing films 有权
标题翻译：沉积电活性掺杂的结晶含硅膜的方法
公开(公告)号：US20060205194A1
公开(公告)日：2006-09-14
申请号：US11343244
申请日：2006-01-30
申请人： Matthias Bauer
发明人： Matthias Bauer
IPC分类号： C23C16/00 , H01L21/22
CPC分类号： H01L29/7848 , C23C16/04 , C23C16/22 , C23C16/24 , C23C16/32 , C23C16/325 , C23C16/45512 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/32056 , H01L21/3215 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
摘要翻译：含有相对高含量的III族或V族掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。可以获得非常高的取代掺入水平，包括含有电活性掺杂剂的至少约3×10 20原子cm -3的晶体硅膜。通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

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