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81. 发明申请

US20130323411A1 Low Haze Transparent Conductive Electrodes and Method of Making the Same 审中-公开
标题翻译：低雾度透明导电电极及其制造方法
公开(公告)号：US20130323411A1
公开(公告)日：2013-12-05
申请号：US13906330
申请日：2013-05-30
申请人： Nuovo Film Inc.
发明人： Hakfei Poon
IPC分类号： H01M4/38
CPC分类号： H05K3/125 , B32B7/00 , B82Y30/00 , B82Y40/00 , B82Y99/00 , H01B1/22 , H01M4/38 , H05K1/0296 , H05K1/09 , H05K3/12 , H05K3/1283 , H05K2201/0108 , H05K2201/026 , H05K2203/0315 , H05K2203/125 , Y10T428/24917 , Y10T428/24942
摘要： A transparent conductive electrode comprising metal nanowires and method of making is described, wherein the transparent conductive electrode has a pencil hardness more than 1H, nanoporous surface having pore sizes less than 25 nm and surface roughness less than 50 nm. The transparent conductive electrode further comprises an index matching layer, having a refractive index between 1.1-1.5 and a thickness between 100-200 nm.
摘要翻译：描述了包含金属纳米线的透明导电电极及其制造方法，其中透明导电电极的铅笔硬度大于1H，孔径小于25nm，表面粗糙度小于50nm的纳米多孔表面。透明导电电极还包括折射率匹配层，折射率在1.1-1.5之间，厚度在100-200nm之间。

82. 发明申请

US20130313963A1 CARBON NANOTUBE FIELD EMISSION DEVICE WITH HEIGHT VARIATION CONTROL 审中-公开
标题翻译：具有高度变化控制的碳纳米管场发射装置
公开(公告)号：US20130313963A1
公开(公告)日：2013-11-28
申请号：US13794557
申请日：2013-03-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Zvi YANIV , Dongsheng MAO
IPC分类号： H01J1/304
CPC分类号： H01J1/304 , B82Y99/00 , H01J9/025 , H01J31/123 , H01J2201/30469 , H01J2329/0455 , Y10S977/939
摘要： A carbon nanotube layer for a field emission cathode where individual carbon nanotubes or small groups of carbon nanotubes that stick out from the surface more than the rest of the layer are avoided. Electron fields will concentrate on these sharp points, creating an enhanced image on the phosphor, resulting in a more luminous spot than the surroundings. Activation processes further free such carbon nanotubes or groups of carbon nanotubes sticking out from the surface, exasperating the problem.
摘要翻译：一种用于场致发射阴极的碳纳米管层，其中避免了单层碳纳米管或从表面伸出的碳纳米管的小组。电子场将集中在这些尖锐点上，在磷光体上产生增强的图像，导致比周围环境更亮的斑点。激活过程进一步释放这种碳纳米管或从表面伸出的碳纳米管组，从而激怒了这个问题。

83. 发明申请

US20130293090A1 FIELD EMISSION DEVICE 有权
标题翻译：场发射装置
公开(公告)号：US20130293090A1
公开(公告)日：2013-11-07
申请号：US13711434
申请日：2012-12-11
申请人： TSINGHUA UNIVERSITY , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： PENG LIU , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01J19/24 , H01J19/38
CPC分类号： H01J19/24 , B82Y10/00 , B82Y99/00 , H01J19/38 , Y10S977/742 , Y10S977/939
摘要： The present disclosure relates to a field emission device. The field emission device includes a carbon nanotube structure and two electrodes electrically connected with the carbon nanotube structure. The carbon nanotube structure includes a carbon nanotube array, a carbon nanotube layer located on one side of the carbon nanotube array, and a carbon nanotube cluster between the carbon nanotube array and the carbon nanotube layer. The carbon nanotube array includes a number of first carbon nanotubes that are parallel with each other. The carbon nanotube layer includes a number of second carbon nanotubes. The carbon nanotube cluster includes a plurality of third carbon nanotubes that are entangled around both the plurality of first carbon nanotubes and the plurality of second carbon nanotubes.
摘要翻译：本公开涉及一种场致发射装置。场致发射器件包括碳纳米管结构和与碳纳米管结构电连接的两个电极。碳纳米管结构包括碳纳米管阵列，位于碳纳米管阵列一侧的碳纳米管层和碳纳米管阵列与碳纳米管层之间的碳纳米管簇。碳纳米管阵列包括彼此平行的多个第一碳纳米管。碳纳米管层包括多个第二碳纳米管。碳纳米管簇包括在多个第一碳纳米管和多个第二碳纳米管两端缠绕的多个第三碳纳米管。

84. 发明授权

US08576542B2 Structural electrochemical capacitor 有权
标题翻译：结构电化学电容器
公开(公告)号：US08576542B2
公开(公告)日：2013-11-05
申请号：US12956851
申请日：2010-11-30
申请人： James F. Snyder , Eric D. Wetzel
发明人： James F. Snyder , Eric D. Wetzel
IPC分类号： H01G9/00
CPC分类号： H01G9/15 , B82Y99/00 , H01G9/0036 , H01G9/048 , H01G11/02 , H01G11/32 , H01G11/40 , H01G11/52 , H01G11/56 , H01G11/84 , Y02E60/13 , Y10S977/948 , Y10T29/417
摘要： A structural electrochemical capacitor that includes at least one pair of electrodes and a solid electrolytic material disposed between the electrodes which, taken collectively, have sufficient mechanical strength to allow the electrochemical capacitor to be used as a structural component of an article of manufacture is described. The present invention also describes a method of capacitively storing electrical energy and conserving mass and/or volume in a device that includes the steps of: fabricating portions of the structure of a device with high-strength structural electrochemical capacitor that includes at least one pair of electrodes and a body of solid electrolytic material disposed between said electrodes wherein the body of solid electrolytic material accounts for a majority of the mass of a structural element or a majority of the volume of a structural element in the device.
摘要翻译：一种结构电化学电容器，其包括至少一对电极和设置在电极之间的固体电解质材料，它们共同地具有足够的机械强度以使电化学电容器用作制造制品的结构部件。本发明还描述了一种在器件中电容存储电能并节省质量和/或体积的方法，该方法包括以下步骤：用高强度结构电化学电容器制造具有高强度结构电化学电容器的器件结构的部分，该器件包括至少一对电极和设置在所述电极之间的固体电解材料体，其中固体电解质材料占结构元件的质量的大部分或装置中结构元件的体积的大部分。

85. 发明申请

US20130288458A1 METHOD FOR MAKING EPITAXIAL STRUCTURE 有权
标题翻译：制造外形结构的方法
公开(公告)号：US20130288458A1
公开(公告)日：2013-10-31
申请号：US13676033
申请日：2012-11-13
申请人： YANG WEI , SHOU-SHAN FAN
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： H01L21/20
CPC分类号： H01L21/20 , B82Y30/00 , B82Y40/00 , B82Y99/00 , H01L29/0657 , H01L29/1606 , H01L29/66015 , H01L29/6603 , H01L29/66037 , H01L33/007 , H01L33/40
摘要： A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, growing a buffer layer on the epitaxial growth surface; placing a graphene layer on the buffer layer; epitaxially growing an epitaxial layer on the buffer layer; and removing the substrate. The graphene layer includes a number of apertures to expose a part of the buffer layer. The epitaxial layer is grown from the exposed part of the buffer layer and through the apertures.
摘要翻译：提供了制造外延结构的方法。该方法包括提供具有外延生长表面的衬底，在外延生长表面上生长缓冲层; 在缓冲层上放置石墨烯层; 在缓冲层上外延生长外延层; 并去除衬底。石墨烯层包括许多孔以暴露缓冲层的一部分。外延层从缓冲层的暴露部分并通过孔生长。

86. 发明申请

US20130285017A1 STRAINED CHANNEL REGION TRANSISTORS EMPLOYING SOURCE AND DRAIN STRESSORS AND SYSTEMS INCLUDING THE SAME 有权
标题翻译：使用来源和排水压力机的应变通道区域晶体管和包括其的系统
公开(公告)号：US20130285017A1
公开(公告)日：2013-10-31
申请号：US13977394
申请日：2011-12-20
申请人： Van H. Le , Harold W. Kennel , Willy Rachmady , Ravi Pillarisetty , Jack Kavalieros , Niloy Mukherjee
发明人： Van H. Le , Harold W. Kennel , Willy Rachmady , Ravi Pillarisetty , Jack Kavalieros , Niloy Mukherjee
IPC分类号： H01L29/20 , H01L29/775
CPC分类号： H01L29/7848 , B82Y99/00 , H01L29/0673 , H01L29/20 , H01L29/42392 , H01L29/775 , H01L29/785 , H01L29/78618 , H01L29/78681 , H01L29/78684 , H01L29/78696 , Y10S977/762
摘要： Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor. In embodiments of the invention, the transistor channel regions are comprised of germanium, silicon, a combination of germanium and silicon, or a combination of germanium, silicon, and tin and the source and drain regions are comprised of a doped III-V compound semiconductor material. Embodiments of the invention are useful in a variety of transistor structures, such as, for example, trigate, bigate, and single gate transistors and transistors having a channel region comprised of nanowires or nanoribbons.
摘要翻译：本发明的实施例提供具有应变通道区域的晶体管结构。通过源极和漏极区域中相对于晶体管的沟道区域的晶格失配产生应变。在本发明的实施例中，晶体管沟道区由锗，硅，锗和硅的组合，或锗，硅和锡的组合组成，源极和漏极区由掺杂的III-V族化合物半导体材料。本发明的实施例可用于各种晶体管结构，例如具有由纳米线或纳米带构成的沟道区的触发，大电流和单栅极晶体管和晶体管。

87. 发明申请

US20130284023A1 Asymmetric Nanotube Containing Membranes 有权
标题翻译：不对称纳米管含膜
公开(公告)号：US20130284023A1
公开(公告)日：2013-10-31
申请号：US13918570
申请日：2013-06-14
申请人： Nagare Membranes, LLC
发明人： Timothy V. Ratto , Jason K. Holt , Alan W. Szmodis
IPC分类号： B01D69/04
CPC分类号： B01D61/027 , B01D61/025 , B01D61/145 , B01D67/0013 , B01D69/043 , B01D71/06 , B01D71/16 , B01D71/68 , B05D3/00 , B82Y99/00 , Y02A20/128 , Y02A20/131 , Y10S977/751
摘要： This invention relates to heterogenous pore polymer nanotube membranes useful in filtration, such as reverse osmosis desalination, nanofiltration, ultrafiltration and gas separation.
摘要翻译：本发明涉及可用于过滤的异质孔聚合物纳米管膜，例如反渗透脱盐，纳滤，超滤和气体分离。

88. 发明授权

US08570798B2 Electronic devices formed of two or more substrates connected together, electronic systems comprising electronic devices, and methods of forming electronic devices 有权
标题翻译：由连接在一起的两个或多个基板形成的电子设备，包括电子设备的电子系统以及形成电子设备的方法
公开(公告)号：US08570798B2
公开(公告)日：2013-10-29
申请号：US13155064
申请日：2011-06-07
申请人： Roy E. Meade , Gurtej S. Sandhu
发明人： Roy E. Meade , Gurtej S. Sandhu
IPC分类号： G11C11/14
CPC分类号： H05K1/0298 , B82Y99/00 , G11C8/08 , G11C8/10 , G11C11/14 , G11C11/15 , G11C11/16 , G11C11/161 , G11C19/0808 , H01L24/02 , H01L24/80 , H01L2224/04042 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01093 , H01L2924/014 , H01L2924/12042 , H05K1/112 , H05K1/113 , H05K1/144 , H05K3/3436 , H05K3/36 , H05K3/4697 , H05K7/04 , H05K2201/09381 , Y10S977/932 , Y10T29/49126 , Y10T29/49128 , H01L2924/00
摘要： Electronic devices comprise a first substrate and a second substrate. The first substrate comprises circuitry including a plurality of conductive traces at least substantially parallel to each other through at least a portion of the first substrate. A plurality of bond pads is positioned on a surface of the first substrate and comprises a width extending over at least two of the plurality of conductive traces. A plurality of vias extends from adjacent at least some of the conductive traces to the plurality of bond pads. The second substrate is bonded to the first substrate and comprises support circuitry coupled to the plurality of bond pads on the first substrate with a plurality of conductive bumps. Memory devices and related methods of forming electronic devices and memory devices are also disclosed, as are electronic systems.
摘要翻译：电子器件包括第一衬底和第二衬底。第一衬底包括电路，其包括通过至少一部分第一衬底彼此至少基本平行的多个导电迹线。多个接合焊盘定位在第一基板的表面上并且包括在多个导电迹线中的至少两个之上延伸的宽度。多个通孔从相邻的至少一些导电迹线延伸到多个接合焊盘。第二衬底被结合到第一衬底并且包括支撑电路，其耦合到具有多个导电凸块的第一衬底上的多个接合焊盘。还公开了形成电子设备和存储器件的存储器件和相关方法，电子系统也是如此。

89. 发明申请

US20130281012A1 Interconnected Nanosystems 审中-公开
标题翻译：互连的纳米系统
公开(公告)号：US20130281012A1
公开(公告)日：2013-10-24
申请号：US13633827
申请日：2012-10-02
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： Peter J. Burke
IPC分类号： H01Q1/36
CPC分类号： H01Q1/36 , B82Y99/00 , H01Q1/368 , H01Q3/2676 , H04B1/38 , Y10S977/75 , Y10S977/752 , Y10S977/762 , Y10T29/49016
摘要： Communication to or from a nanodevice is provided with a nanostructure-based antenna, preferably formed from, but not limited to, a single wall nanotube (SWNT). Other nanostructure-based antennas include double walled nanotubes, semiconducting nanowires, metal nanowires and the like. The use of a nanostructure-based antenna eliminates the need to provide a physical communicative connection to the nanodevice, while at the same time allowing communication between the nanodevice and other nanodevices or outside systems, i.e., systems larger than nanoscale such as those formed from semiconductor fabrication processes such as CMOS, GaAs, bipolar processes and the like.
摘要翻译：与纳米器件的通信提供有基于纳米结构的天线，优选由但不限于单壁纳米管（SWNT）形成。其他基于纳米结构的天线包括双壁纳米管，半导体纳米线，金属纳米线等。使用基于纳米结构的天线消除了提供与纳米设备的物理通信连接的需要，同时允许纳米器件和其他纳米器件或外部系统之间的通信，即大于纳米级的系统，例如由半导体形成的纳米尺度制造工艺如CMOS，GaAs，双极工艺等。

90. 发明申请

US20130270213A1 METHOD FOR SANIFYING/STERILIZING CORK STOPPERS 有权
标题翻译：灭菌/灭菌灭火器的方法
公开(公告)号：US20130270213A1
公开(公告)日：2013-10-17
申请号：US13995744
申请日：2012-07-30
申请人： Floriano Zambelli
发明人： Floriano Zambelli
IPC分类号： A61L2/18 , B65D39/00
CPC分类号： A61L2/18 , A61L2/232 , A61L2/235 , A61L2202/17 , B05D1/62 , B05D7/08 , B27K7/00 , B65D39/0011 , B67B1/03 , B82Y99/00 , C23C14/021 , C23C14/0605 , C23C14/228
摘要： There is provided a method for sanifying/sterilizing cork stoppers, from the least expensive provided with an agglomerated body and washers to the finest made of high quality natural cork, used in bottle capping, and the cork stoppers thereby produced. The method includes applying a film having a reticulated structure with cells smaller than the cork cells of the stopper on the surface of the cork cells and on the outer surface of the stopper.
摘要翻译：提供了一种从最小廉价设置有团块体和垫圈到用于瓶盖的优质天然软木最好的软木塞和由此生产的软木塞的消毒/灭菌方法。该方法包括将具有小于塞子的软木细胞的细胞的网状结构的膜施用在软木细胞的表面上和塞子的外表面上。

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