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81. 发明授权

US08917485B2 Magnetoresistive effect element, magnetic head, and magnetic disk apparatus 有权
标题翻译：磁阻效应元件，磁头和磁盘装置
公开(公告)号：US08917485B2
公开(公告)日：2014-12-23
申请号：US11546975
申请日：2006-10-13
申请人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/33 , G01R33/09 , G11B5/39 , G11C11/16 , H01L43/08 , H01F10/32 , B82Y25/00 , G11B5/455
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/455 , G11C11/16 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.
摘要翻译：磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。

82. 发明授权

US08213129B2 Current-perpendicular-to-plane magnetoresistive element in which the magnetization direction of an intermediate metallic magnetic layer is twisted 失效
标题翻译：电流 - 垂直于平面的磁阻元件，其中中间金属磁性层的磁化方向被扭曲
公开(公告)号：US08213129B2
公开(公告)日：2012-07-03
申请号：US11215971
申请日：2005-09-01
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： G11B5/3903
摘要： A magnetoresistive element includes at least three metallic magnetic layers, at least two connection layers provided between the at least three metallic magnetic layers, each having an insulating layer and current confined paths including a metallic magnetic material penetrating the insulating layer, and electrodes which supply a current perpendicularly to a plane of a stacked film of the metallic magnetic layers and the connection layers.
摘要翻译：磁阻元件包括至少三个金属磁性层，设置在至少三个金属磁性层之间的至少两个连接层，每个具有绝缘层和包含透过绝缘层的金属磁性材料的电流限制路径，以及提供电流垂直于金属磁性层和连接层的叠层膜的平面。

83. 发明申请

US20100226048A1 MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件，磁阻效应头，磁存储和磁记忆
公开(公告)号：US20100226048A1
公开(公告)日：2010-09-09
申请号：US11525076
申请日：2006-09-22
申请人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译：提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

84. 发明授权

US07522390B2 Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same 有权
标题翻译：磁阻效应元件和包括该磁阻效应元件的磁头和磁性重放装置
公开(公告)号：US07522390B2
公开(公告)日：2009-04-21
申请号：US11248203
申请日：2005-10-13
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B5/398 , G11B2005/3996
摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.
摘要翻译：自旋阀磁阻效应膜包括磁化固定层，无磁化层和插入其间的中间层。中间层具有设置在绝缘层中并由磁性金属材料制成的导电部分。堆叠在中间层的上侧的铁磁性膜，构成磁化固定层的铁磁性膜和不含磁化层的铁磁性膜具有垂直取向部，该垂直取向部设置在导电部的上方，晶体生长方向大致垂直于膜平面，以及存在于除垂直取向部以外的部分的非垂直取向部。磁阻效应元件具有一对在垂直于磁阻效应膜的膜平面的方向上通过感测电流的电极。

85. 发明授权

US07426098B2 Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：具有三层缓冲层的磁阻元件，磁头，磁性再现装置和磁存储器
公开(公告)号：US07426098B2
公开(公告)日：2008-09-16
申请号：US11017965
申请日：2004-12-22
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/39 , G11C11/16 , H01F10/3259 , H01F10/3263 , H01F41/325
摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction depending on an external magnetic field, in which the magnetization pinned layer or nonmagnetic intermediate layer includes an insulator, and a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetization free layer includes a body-centered cubic layer with a body-centered cubic structure, and the thickness of the body-centered cubic layer is 2 nm or more.
摘要翻译：磁阻元件包括磁阻膜，其具有磁化被固定在一个方向上的磁化固定层，非磁性中间层和磁化自由层，其磁化方向取决于外部磁场而变化，其中磁化固定层或非磁性中间层包括绝缘体和电连接到磁阻膜的一对电极，以便在基本垂直于磁阻膜的平面的方向上提供感测电流。无磁化层包括以体心立方结构的体心立方层，体心立方层的厚度为2nm以上。

86. 发明申请

US20070092639A1 Method for manufacturing magnetoresistive element 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US20070092639A1
公开(公告)日：2007-04-26
申请号：US11583968
申请日：2006-10-20
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： B05D5/12
CPC分类号： C23C8/02 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/34 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/42 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F41/305
摘要： There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.
摘要翻译：提供了一种用于制造具有磁化钉扎层，磁化自由层和包括布置在磁化钉扎层和磁化自由层之间的绝缘层和穿过绝缘层的电流路径的间隔层的磁阻元件的方法。该方法包括在制造间隔层时，沉积形成电流路径的第一非磁性金属层，在第一非磁性金属层上沉积待转换成绝缘层的第二金属层，并进行两个阶段的氧化将第一氧化处理中的氧化气体的分压设定为第二氧化处理中的氧化气体的分压的1/10以下的处理，将第二金属层照射离子束或 RF等离子体中的稀有气体进行第一次氧化处理。

87. 发明申请

US20060050444A1 Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory 失效
标题翻译：磁阻元件，磁头，磁记录装置和磁存储器
公开(公告)号：US20060050444A1
公开(公告)日：2006-03-09
申请号：US11215971
申请日：2005-09-01
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3903
摘要： A magnetoresistive element includes at least three metallic magnetic layers, at least two connection layers provided between the at least three metallic magnetic layers, each having an insulating layer and current confined paths including a metallic magnetic material penetrating the insulating layer, and electrodes which supply a current perpendicularly to a plane of a stacked film of the metallic magnetic layers and the connection layers.
摘要翻译：磁阻元件包括至少三个金属磁性层，设置在至少三个金属磁性层之间的至少两个连接层，每个具有绝缘层和包含透过绝缘层的金属磁性材料的电流限制路径，以及提供电流垂直于金属磁性层和连接层的叠层膜的平面。

88. 发明申请

US20050201020A1 Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录和再现装置
公开(公告)号：US20050201020A1
公开(公告)日：2005-09-15
申请号：US11074643
申请日：2005-03-09
申请人： Hiromi Fuke , Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Fuke , Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/39 , G01R33/09 , G11B5/127 , G11B5/33 , H01F10/26 , H01F10/32 , H01L43/08
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译：磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性间隔层和无磁化层。

89. 发明授权

US07821748B2 Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory 有权
标题翻译：磁阻效应元件包括阻尼因子调节层，磁阻效应头，磁存储和磁存储器
公开(公告)号：US07821748B2
公开(公告)日：2010-10-26
申请号：US11525076
申请日：2006-09-22
申请人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译：提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

90. 发明授权

US07808747B2 Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁记录/重放装置
公开(公告)号：US07808747B2
公开(公告)日：2010-10-05
申请号：US11702582
申请日：2007-02-06
申请人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/09 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3281 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al (aluminum), Si (silicon), Mg (magnesium), Ta (tantalum) and Zn (zinc) as a major constituent.
摘要翻译：磁阻效应元件包括固定磁化层; 自由磁化层; 在固定磁化层和自由磁化层之间的非磁性间隔层; 以及插入层，其设置在所述自由磁化层与所述非磁性间隔层的相对侧上，其中，所述第一绝缘层具有氧化物，氮化物或氮氧化物，所述氧化物，氮化物或氮氧化物包含选自由Al组成的组中的至少一种元素铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）作为主要成分，并且所述插入层具有氧化物，氮化物或氧氮化物，其包含至少一种选自以Al（铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）为主要成分的基团。

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