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    • 82. 发明授权
    • Respiration aiding device
    • 呼吸辅助装置
    • US5850834A
    • 1998-12-22
    • US793944
    • 1997-07-16
    • Norio YoshidaHiroshi Kimura
    • Norio YoshidaHiroshi Kimura
    • A61F5/08A61M15/08
    • A61F5/08
    • A respiration aiding device capable of giving a little sense of incompatibility and causing no interference with respiration with no concern about coming off after a long-term use. The respiration aiding device comprises a link portion having both ends to be inserted into the right and left nares, and a pair of right and left nasal septum presser portions attached to the ends of the link portion. A dimension of the right and left nasal septum presser portions is smaller than the diameter of the nares. Magnets are mounted at opposite positions in the nasal septum presser portions so that a north pole of one magnet and a south pole of the other magnet is disposed in confronting relation to each other.
    • PCT No.PCT / JP96 / 01877 Sec。 371日期1997年7月16日 102(e)日期1997年7月16日PCT提交1996年7月5日PCT公布。 出版物WO97 / 02063 日期1997年1月23日呼吸辅助装置能够给予一点不兼容的感觉,不会干扰呼吸,而不用担心在长期使用后脱落。 呼吸辅助装置包括具有插入左右鼻孔的两端的连接部以及附接到连杆部的端部的一对左右鼻中隔部按压部。 左右鼻中隔压脚部的尺寸小于鼻孔的直径。 磁铁安装在鼻中隔部压脚部的相对位置,使得一个磁体的北极和另一个磁体的南极彼此相对设置。
    • 86. 发明授权
    • Magnetic disk system and waveform equalizer therefor
    • 磁盘系统及其波形均衡器
    • US5463504A
    • 1995-10-31
    • US62770
    • 1993-05-18
    • Hiroshi KimuraShoichi MiyazawaRyutaro HoritaKenichi HaseAkihiko HiranoAkira Uragami
    • Hiroshi KimuraShoichi MiyazawaRyutaro HoritaKenichi HaseAkihiko HiranoAkira Uragami
    • G11B5/012G11B5/09G11B20/10G11B20/12G11B20/14
    • G11B20/10046G11B20/10009G11B20/10222G11B20/1403G11B5/012G11B5/09G11B20/1258
    • A magnetic disk system which records and reproduces data on a magnetic disk at different data transfer rates depending on a track position on the disk includes a transversal waveform equalizing circuit which implements an optimal waveform shaping for a readout waveform. The waveform equalizing circuit consists of a register, a frequency synthesizer, a PLL, and a transversal circuit. The transversal circuit consists of variable delay circuits, variable gain amplifiers, and an adder. The frequency synthesizer produces a write clock signal having a frequency which corresponds to a value stored in the register which depends on the data transfer rate, and the PLL responds to the write clock signal to produce a control signal by which the delay time of the transversal circuit is controlled. Consequently, the delay characteristic is not affected by disparity of circuit components of the transversal circuit, and the write clock frequency and the delay time of the transversal circuit can be set to intended values by merely changing the value stored in the register in response to a variation of the data transfer rate.
    • 根据磁盘上的轨道位置以不同的数据传输速率记录和再现磁盘上的数据的磁盘系统包括对读出波形实现最佳波形整形的横向波形均衡电路。 波形均衡电路由寄存器,频率合成器,PLL和横向电路组成。 横向电路由可变延迟电路,可变增益放大器和加法器组成。 频率合成器产生具有对应于存储在寄存器中的取决于数据传输速率的值的频率的写时钟信号,并且PLL响应于写时钟信号以产生控制信号,通过该控制信号,横向延迟时间 电路被控制。 因此,延迟特性不受横向电路的电路部件的不均匀影响,并且横向电路的写入时钟频率和延迟时间可以通过仅响应于一个变化来改变存储在寄存器中的值来设置为预期值 数据传输速率的变化。
    • 87. 发明授权
    • Method of making semiconductor device including MOS type field effect
transistor
    • 制造包括MOS型场效应晶体管的半导体器件的方法
    • US5436178A
    • 1995-07-25
    • US186495
    • 1994-01-26
    • Hiroshi Kimura
    • Hiroshi Kimura
    • H01L21/336H01L29/08H01L29/36H01L21/265
    • H01L29/66575H01L29/0847H01L29/36
    • A semiconductor device includes an MOS field effect transistor having a structure in which the tops of its source/drain regions are covered with a polycrystalline silicon layer. The impurity concentration distribution in its depth direction of the source/drain regions of the MOS field effect transistor is such that the concentration is sufficiently high in an area necessary to have conductivity a prescribed depth away from the surface of the semiconductor substrate, and the impurity concentration drastically decreases in areas deeper than that. Thus, a punch through phenomenon in positions relatively deep in the channel region is suppressed, and an MOS field effect transistor having its channel length reduced to 0.5 .mu.m and less and achieving high performance can be obtained. Such an MOS field effect transistor can be produced by implanting an impurity a number of times, controlling appropriately the peak value and the peak position of the impurity concentration, before and after or only after the formation of the polycrystalline silicon layer.
    • 半导体器件包括具有其源极/漏极区域的顶部被多晶硅层覆盖的结构的MOS场效应晶体管。 MOS场效应晶体管的源极/漏极区域的深度方向的杂质浓度分布使得在距离半导体衬底的表面具有规定深度的导电性所需的区域中的浓度足够高,并且杂质 浓度急剧下降。 因此,抑制了沟道区域相对较深的位置的穿孔现象,可以获得沟道长度减小到0.5μm以下并实现高性能的MOS场效应晶体管。 这样的MOS场效应晶体管可以通过在多晶硅层的形成之前和之后或之后适当地注入杂质多次来适当地控制杂质浓度的峰值和峰值位置来产生。
    • 89. 发明授权
    • Semiconductor device and a manufacturing method thereof
    • 半导体装置及其制造方法
    • US5378650A
    • 1995-01-03
    • US6394
    • 1993-01-21
    • Hiroshi Kimura
    • Hiroshi Kimura
    • H01L21/336H01L29/423H01L29/786H01L21/76
    • H01L29/66765H01L29/42384H01L29/78624H01L29/78636
    • A semiconductor device includes a semiconductor substrate having a main surface, an isolating insulator film formed on the main surface and having a substantially vertical side wall, a plurality of semiconductor element regions, which are separated from each other by the isolating insulator film, for forming semiconductor circuit elements therein, a first impurity region formed in the substrate to a predetermined depth from an interface between the isolating insulator film and the substrate by ion implantation, second impurity regions formed in the element regions simultaneously with the first impurity region by the ion implantation and located at a predetermined depth from the main surface, and a side wall insulator film formed by anisotropic etching on the vertical wall of the isolating insulator film.
    • 半导体器件包括具有主表面的半导体衬底,形成在主表面上并具有基本上垂直的侧壁的隔离绝缘膜,通过隔离绝缘膜彼此分离的多个半导体元件区域,用于形成 在其中的半导体电路元件,通过离子注入在衬底中形成到隔离绝缘膜和衬底之间的界面到预定深度的第一杂质区,通过离子注入在元件区中与第一杂质区同时形成的第二杂质区 并且位于距离主表面的预定深度处,以及通过各向异性蚀刻在隔离绝缘膜的垂直壁上形成的侧壁绝缘膜。