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81. 发明授权

US07149044B1 Methods, apparatus and computer program products for writing tracks on a disk based on an available stroke 有权
标题翻译：方法，设备和计算机程序产品，用于根据可用的笔划在磁盘上写入轨迹
公开(公告)号：US07149044B1
公开(公告)日：2006-12-12
申请号：US10895467
申请日：2004-07-20
申请人： Yuan Chen , Brian Rigney , Lin Guo , Don Brunnett , Yu Sun , Stanley H. Shepherd
发明人： Yuan Chen , Brian Rigney , Lin Guo , Don Brunnett , Yu Sun , Stanley H. Shepherd
IPC分类号： G11B5/09
CPC分类号： B82Y10/00 , G11B5/59677 , G11B5/743
摘要： Track pitch for writing tracks on a disk is determined based on an available stroke across the disk. The available stroke is identified by searching across the disk for where information can be written and read. The track pitch is determined for writing tracks on the disk based on the available stroke across the disk. Tracks are written on the disk based on the determined track pitch.
摘要翻译：基于磁盘上的可用笔划确定在磁盘上写入轨迹的轨距。通过在磁盘上搜索可以写入和读取信息的位置来识别可用笔画。确定磁道间距是根据磁盘上可用的行程在磁盘上写入磁道。基于确定的轨道间距将磁道写入磁盘。

82. 发明授权

US07145745B1 Multi-stage actuator disk drives, methods, and computer program products that compensate for repeatable runout based on estimated secondary actuator position 有权
标题翻译：多级执行器磁盘驱动器，方法和计算机程序产品，可根据估计的二次执行器位置补偿可重复的跳动
公开(公告)号：US07145745B1
公开(公告)日：2006-12-05
申请号：US10932717
申请日：2004-09-02
申请人： Stan Shepherd , Jason Adler , Lin Guo , Xiaoping Hu , Yu Sun
发明人： Stan Shepherd , Jason Adler , Lin Guo , Xiaoping Hu , Yu Sun
IPC分类号： G11B5/596
CPC分类号： G11B5/5552
摘要： Methods of compensating for repeatable runout in a disk drive are provided. The disk drive includes a data storage disk, a transducer adjacent to the disk, a primary actuator for positioning the transducer over a first range of movement, and a secondary actuator for positioning the transducer over a second range of movement that is less than the first range of movement. Estimates are made of the position of the secondary actuator in the second range of movement. Data is read from the disk via the transducer. A position error signal is determined based on the read data. Positioning of the transducer by the primary actuator is controlled based on the estimated position of the secondary actuator in the second range of movement and based on the position error signal to compensate for repeatable runout.
摘要翻译：提供补偿磁盘驱动器中可重复跳动的方法。磁盘驱动器包括数据存储盘，与盘相邻的换能器，用于在第一移动范围上定位换能器的主致动器，以及辅助致动器，用于将传感器定位在比第一移动范围小的第二移动范围运动范围在第二运动范围内由次级致动器的位置进行估计。通过传感器从磁盘读取数据。基于读取的数据确定位置误差信号。基于在第二移动范围内的辅助致动器的估计位置并且基于位置误差信号来控制由主致动器定位换能器，以补偿可重复的跳动。

83. 发明授权

US07106542B1 Method and apparatus for determining embedded runout correction values when self-servo writing or partial self-servo writing a disk drive 失效
标题翻译：当自动伺服写入或部分自动伺服写入磁盘驱动器时，确定嵌入式跳动校正值的方法和装置
公开(公告)号：US07106542B1
公开(公告)日：2006-09-12
申请号：US10318315
申请日：2002-12-11
申请人： Yu Sun , Lin Guo , Don Brunnett , Georgie Tan , John Purkett
发明人： Yu Sun , Lin Guo , Don Brunnett , Georgie Tan , John Purkett
IPC分类号： G11B21/02
CPC分类号： G11B5/59633 , G11B5/59627 , G11B5/59666
摘要： A method and apparatus for determining embedded runout correction values when self-servo writing or partial self-servo writing is disclosed. In one embodiment, a disk surface, which has servo information written thereon, is provided. The servo information is grouped into 1x servo sectors and 2x servo sectors, and the 1x servo sectors and the 2x servo sectors form a plurality of tracks. A read head servos on the 1x servo sectors associated with a track. Both position error signals due to repeatable runout for the 1x servo sectors and information related to position error signals due to repeatable runout for the 2x servo sectors are determined, while servoing on the 1x servo sectors. Embedded runout correction values for the 1x servo sectors and the 2x servo sectors are calculated.
摘要翻译：一种当自动伺服写入或部分自伺服写入时确定嵌入的跳动校正值的方法和装置。在一个实施例中，提供了其上写有伺服信息的盘表面。伺服信息被分组为1×伺服扇区和2×伺服扇区，1×伺服扇区和2×伺服扇区形成多个轨道。与磁道相关的1个伺服扇区上的读头伺服。由于1 x伺服扇区的可重复跳动和由于2 x伺服扇区的可重复跳动引起的与位置误差信号相关的信息，确定了两个位置误差信号，同时在1个伺服扇区上进行伺服。计算1 x伺服扇区和2 x伺服扇区的嵌入式跳动校正值。

84. 发明授权

US07085094B1 Interleaved repeatable runout correction for data storage device 失效
标题翻译：用于数据存储设备的交错重复跳动校正
公开(公告)号：US07085094B1
公开(公告)日：2006-08-01
申请号：US10984558
申请日：2004-11-08
申请人： Mark Heimbaugh , Yu Sun
发明人： Mark Heimbaugh , Yu Sun
IPC分类号： G11B5/596
CPC分类号： G11B5/59627
摘要： A reduction in computational load associated with correction of repeatable runout is provided. Rather than performing DFT for each analyzed frequency at each interrupt, at least some frequencies are not analyzed in the same interrupt period. DFTs for different frequencies may be staggered or interleaved. DFTs for different frequencies may be performed at different rates, preferably, using higher rates for higher frequencies.
摘要翻译：提供了与可重复跳动校正相关联的计算负载的减少。在每次中断时，不要对每个分析频率执行DFT，而是在相同的中断周期内至少对某些频率进行分析。不同频率的DFT可能交错或交错。可以以不同的速率执行用于不同频率的DFT，优选地，对于较高频率使用较高的速率。

85. 发明授权

US06987638B1 Method and apparatus for applying adaptive non-linear repeatable runout compensation in a disk drive 失效
标题翻译：在磁盘驱动器中应用自适应非线性可重复跳动补偿的方法和装置
公开(公告)号：US06987638B1
公开(公告)日：2006-01-17
申请号：US10430898
申请日：2003-05-05
申请人： Don Brunnett , Yu Sun
发明人： Don Brunnett , Yu Sun
IPC分类号： G11B5/596
CPC分类号： G11B5/59627
摘要： A method and apparatus for applying adaptive non-linear repeatable runout compensation in a disk drive is provided. In one embodiment, the present invention provides a disk surface having a track written thereon, wherein the track includes repeatable runout. A non-linear converge gain is applied to compensate for the repeatable runout. In one embodiment, the converge gain is based upon an amplitude of a position error signal associated with the repeatable runout at a frequency of rotation of the disk surface (or multiple thereof).
摘要翻译：提供了一种在磁盘驱动器中应用自适应非线性可重复跳动补偿的方法和装置。在一个实施例中，本发明提供具有写在其上的轨道的盘表面，其中轨道包括可重复的跳动。应用非线性收敛增益来补偿可重复的跳动。在一个实施例中，会聚增益基于与盘表面（或其多个）的旋转频率处的可重复跳动相关联的位置误差信号的幅度。

86. 发明申请

US20050151265A1 Efficient use of wafer area with device under the pad approach 审中-公开
标题翻译：利用垫片方式下的设备有效利用晶圆区域
公开(公告)号：US20050151265A1
公开(公告)日：2005-07-14
申请号：US10758148
申请日：2004-01-14
申请人： Nian Yang , Hiroyuki Ogawa , Yider Wu , Kuo-Tung Chang , Yu Sun , Darlene Hamilton
发明人： Nian Yang , Hiroyuki Ogawa , Yider Wu , Kuo-Tung Chang , Yu Sun , Darlene Hamilton
IPC分类号： G06F17/50 , H01L23/485 , H01L27/02 , H01L23/48 , H01L21/44
CPC分类号： H01L27/0203 , H01L24/05 , H01L24/06 , H01L2224/02166 , H01L2224/05093 , H01L2224/05096 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/14 , H01L2924/19043 , H01L2924/00014
摘要： More efficient use of silicon area is achieved by incorporating an active device beneath a pad area of a semiconductor structure. The pad area includes a substrate having a first metal layer above it. A second metal layer is below the first metal layer. The active device resides in the substrate below the second metal layer. A layer of dielectric separates the first and second metal layers. A via within the dielectric layer electrically couples the first and second metal layers. A via connects to the active component. Subsequent metal layers can be arranged between the first and second metal layers.
摘要翻译：通过在半导体结构的焊盘区域的下方并入有源器件来实现硅面积的更有效的使用。焊盘区域包括在其上方具有第一金属层的基板。第二金属层位于第一金属层的下方。有源器件位于第二金属层下方的衬底中。电介质层分离第一和第二金属层。电介质层内的通孔电耦合第一和第二金属层。 A通道连接到活动组件。随后的金属层可以布置在第一和第二金属层之间。

87. 发明授权

US06687081B1 Disk drive using seek profile to enhance fly height control 失效
标题翻译：磁盘驱动器使用查找配置文件来增强飞行高度控制
公开(公告)号：US06687081B1
公开(公告)日：2004-02-03
申请号：US09570799
申请日：2000-05-15
申请人： Matthew O'Hara , Don Brunnet , Yu Sun , David M. Sigmond
发明人： Matthew O'Hara , Don Brunnet , Yu Sun , David M. Sigmond
IPC分类号： G11B5596
CPC分类号： G11B5/5547 , G11B5/5534 , G11B5/6011
摘要： A disk drive uses seek profile manipulation to provide enhanced transducer fly height control. The maximum seek velocity that is used during a seek operation is made dependent upon, among other things, the direction associated with the seek operation (i.e., either radially inward or radially outward with respect to the disk). In a preferred embodiment, the maximum seek velocity in a direction that normally results in a fly height loss is made less than the maximum seek velocity in the opposite direction. Thus, a minimum transducer fly height can be maintained with minimal effect on average seek time in the disk drive. In one approach, the maximum seek velocity values are stored within a lookup table within the disk drive.
摘要翻译：磁盘驱动器使用查找配置文件操作来提供增强的换能器飞行高度控制。在搜索操作期间使用的最大寻道速度取决于除了别的以外与寻道操作相关联的方向（即，相对于盘径向向内或径向向外）。在优选实施例中，使通常导致飞高高度损失的方向上的最大寻道速度小于相反方向上的最大寻道速度。因此，可以保持最小的传感器飞行高度，对磁盘驱动器中的平均寻道时间影响最小。在一种方法中，最大寻道速度值存储在磁盘驱动器内的查找表中。

88. 发明授权

US06630384B1 Method of fabricating double densed core gates in sonos flash memory 有权
标题翻译：在sonos闪存中制造双激光核心门的方法
公开(公告)号：US06630384B1
公开(公告)日：2003-10-07
申请号：US09971483
申请日：2001-10-05
申请人： Yu Sun , Michael A. Van Buskirk , Mark T. Ramsbey
发明人： Yu Sun , Michael A. Van Buskirk , Mark T. Ramsbey
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L27/115
摘要： One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; forming a first set of memory cell gates over the charge trapping dielectric in the core region; forming a conformal insulation material layer around the first set of memory cell gates; and forming a second set of memory cell gates in the core region, wherein each memory cell gate of the second set of memory cell gates is adjacent to at least one memory cell gate of the first set of memory cell gates, each memory cell gate of the first set of memory cell gates is adjacent at least one memory cell gate of the second set of memory cell gates, and the conformal insulation material layer is positioned between each adjacent memory cell gate.
摘要翻译：本发明的一个方面涉及一种形成非易失性半导体存储器件的方法，包括在衬底上形成电荷俘获电介质，所述衬底具有芯区域和外围区域; 在芯区域中的电荷俘获电介质上形成第一组存储单元栅极; 在所述第一组存储单元栅极周围形成保形绝缘材料层; 以及在所述核心区域中形成第二组存储器单元栅极，其中所述第二组存储单元栅极的每个存储单元栅极与所述第一组存储单元栅极的至少一个存储单元栅极相邻，第一组存储单元栅极与第二组存储单元栅极的至少一个存储单元栅极相邻，并且保形绝缘材料层位于每个相邻的存储单元栅极之间。

89. 发明授权

US06274433B1 Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices 有权
标题翻译：在非易失性存储器半导体器件中形成浮置栅极的方法和装置
公开(公告)号：US06274433B1
公开(公告)日：2001-08-14
申请号：US09476121
申请日：2000-01-03
申请人： Mark Ramsbey , Tuan D. Pham , Yu Sun , Kenneth W. Au
发明人： Mark Ramsbey , Tuan D. Pham , Yu Sun , Kenneth W. Au
IPC分类号： H01L218247
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324
摘要： Methods and arrangements are provided to increase the process control during the fabrication of the floating/control gate configuration in a non-volatile memory semiconductor device. The methods and arrangements effectively reduce the severity of the topology attributable to the space between adjacent floating gates, by advantageously reducing the thickness of the floating gates. The altered topology allows a subsequently formed control gate to be formed without significant surface depressions. Significant surface depressions in the control gate can lead to cracks in the silicide layer that is formed on the control gate. The cracking usually occurs during subsequent thermal processing of the semiconductor device. Thus the disclosed methods and arrangements prevent cracking of the silicide layer on the control gate, which can affect the performance of the semiconductor device by increasing the resistance of the control gate arrangement.
摘要翻译：提供了在非易失性存储器半导体器件中制造浮置/控制栅极配置期间增加处理控制的方法和装置。通过有利地减小浮动栅极的厚度，这些方法和布置有效地降低了归因于相邻浮动栅极之间的空间的拓扑的严重性。改变的拓扑允许随后形成的控制栅极形成而没有显着的表面凹陷。控制栅中的显着的表面凹陷可能导致在控制栅上形成的硅化物层中的裂纹。裂纹通常发生在半导体器件的随后热处理期间。因此，所公开的方法和布置防止了控制栅极上的硅化物层的破裂，这可以通过增加控制栅极布置的电阻来影响半导体器件的性能。

90. 发明授权

US06232630B1 Light floating gate doping to improve tunnel oxide reliability 有权
标题翻译：光浮栅掺杂提高隧道氧化可靠性
公开(公告)号：US06232630B1
公开(公告)日：2001-05-15
申请号：US09348583
申请日：1999-07-07
申请人： Mark T. Ramsbey , Tuan Pham , Yu Sun , Kenneth Wo-Wai Au , David H. Chi
发明人： Mark T. Ramsbey , Tuan Pham , Yu Sun , Kenneth Wo-Wai Au , David H. Chi
IPC分类号： H01L2972
CPC分类号： H01L29/42324
摘要： The reliability of a tunnel oxide is improved by light doping of the floating gate, as with phosphorous or arsenic atoms. Doping can be implemented by ion implantation or by in situ deposition. The relatively low dopant concentration further enhances charge retention on the floating gate.
摘要翻译：隧道氧化物的可靠性通过浮栅的轻掺杂而改善，如同磷或砷原子一样。掺杂可以通过离子注入或原位沉积来实现。相对低的掺杂剂浓度进一步增强了浮栅上的电荷保持。

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