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    • 81. 发明授权
    • Etching method and apparatus for semiconductor wafers
    • 半导体晶片的蚀刻方法和装置
    • US07097784B2
    • 2006-08-29
    • US10742992
    • 2003-12-23
    • Yoshihiro OgawaHisashi OkuchiHiroshi TomitaHiroyasu Iimori
    • Yoshihiro OgawaHisashi OkuchiHiroshi TomitaHiroyasu Iimori
    • B44C1/22C03C15/00
    • H01L21/67248H01L21/31111H01L21/67086
    • A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
    • 一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法,包括选择适合于半导体晶片的蚀刻的预定蚀刻程序,将半导体晶片的数量计数为 在蚀刻之前将其装入蚀刻液中,基于计数得出蚀刻剂的温度下降,将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电,以蚀刻半导体晶片,并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。
    • 82. 发明申请
    • Radiation detecting apparatus, manufacturing method thereof, scintillator panel and radiation detecting system
    • 辐射检测装置及其制造方法,闪烁体面板和放射线检测系统
    • US20060033040A1
    • 2006-02-16
    • US11199201
    • 2005-08-09
    • Satoshi OkadaYoshihiro OgawaMasato InoueKazumi NaganoShinichi TakedaTomoyuki Tamura
    • Satoshi OkadaYoshihiro OgawaMasato InoueKazumi NaganoShinichi TakedaTomoyuki Tamura
    • H05B33/00
    • G21K4/00
    • A radiation detecting apparatus includes a sensor panel 100, a phosphor layer 111 formed on the sensor panel 100 to convert a radiation into light, and a phosphor protecting member 110 covering the phosphor layer 111 to adhere closely to the phosphor protecting member 110. The phosphor protecting member 110 includes a phosphor protecting layer 116 made of vapor deposition polymerization polyimide formed by vapor deposition polymerization, a reflecting layer 113 reflecting the light converted by the phosphor layer 111, and a protecting layer 117 made of vapor deposition polymerization polyurea formed by the vapor deposition polymerization. By such a configuration, a polymerization reaction of the phosphor protecting layer 116 is performed on the substrate. Thereby, the generation of by-products is suppressed to make it easy to acquire the uniformity of film quality. Consequently, the generation of a situation in which structural disorders are generated on the reflection surface of the reflecting layer 113 to cause image defects can be suppressed.
    • 辐射检测装置包括传感器面板100,形成在传感器面板100上以将辐射转换为光的荧光体层111和覆盖荧光体层111以紧密附着于荧光体保护构件110的荧光体保护构件110。 荧光体保护构件110包括由气相沉积聚合形成的蒸镀聚合聚酰亚胺制成的荧光体保护层116,反射层113反射由荧光体层111转换的光,以及由气相沉积聚合聚脲制成的保护层117, 气相沉积聚合。 通过这样的结构,在基板上进行荧光体保护层116的聚合反应。 由此,抑制了副产物的产生,从而容易获得膜质量的均匀性。 因此,可以抑制在反射层113的反射面上产生结构紊乱以引起图像缺陷的情况的产生。