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81. 发明申请

US20140308800A1 METHOD FOR MANUFACTURING COMPOSITE WAFERS 有权
标题翻译：制造复合波导的方法
公开(公告)号：US20140308800A1
公开(公告)日：2014-10-16
申请号：US14343515
申请日：2012-09-14
申请人： Shoji Akiyama , Kazutoshi Nagata
发明人： Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02002 , H01L21/2007 , H01L21/2011 , H01L21/76243 , H01L21/76251
摘要： This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.
摘要翻译：本发明提供一种制造复合晶片的方法，其中可以从一个施主晶片获得至少两个复合晶片，并且其中可以省略倒角步骤。提供了一种用于制造复合晶片的方法，包括：将至少两个手柄晶片的接合表面和施主晶片的表面直接大于或等于至少两个手柄晶片的直径之和，并且具有氢通过从施主晶片的表面注入氢离子形成在其内部的离子注入层，以获得接合晶片; 将粘合晶片在200℃加热至400℃; 以及沿加热的接合晶片的氢离子注入层从施主晶片分离膜，以获得具有转移到至少两个处理晶片上的膜的复合晶片。

82. 外观设计

USD704580S1 Micro flow channel chip for flow cytometer 有权
标题翻译：用于流式细胞仪的微流通芯片
公开(公告)号：USD704580S1
公开(公告)日：2014-05-13
申请号：US29421304
申请日：2012-06-29
申请人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki
设计人： Yuji Akiyama , Shoji Akiyama , Takeshi Yamasaki

83. 发明授权

US07993818B2 Optical disk manufacturing method 失效
标题翻译：光盘制造方法
公开(公告)号：US07993818B2
公开(公告)日：2011-08-09
申请号：US11613062
申请日：2006-12-19
申请人： Hidetoshi Watanabe , Shoji Akiyama
发明人： Hidetoshi Watanabe , Shoji Akiyama
IPC分类号： B29D17/00
CPC分类号： B29D17/005 , G11B7/24038 , G11B7/26
摘要： A method for manufacturing an optical disk having a middle layer on a substrate includes the steps of coating an ultraviolet curing resin over the substrate, irradiating ultraviolet rays to the ultraviolet curing resin and prepolymerizing the ultraviolet curing resin, and forming the middle layer by pressing a stamper against the prepolymerized ultraviolet curing resin, irradiating ultraviolet rays to the ultraviolet curing resin and thus curing the ultraviolet curing resin.
摘要翻译：一种在基板上具有中间层的光盘的制造方法，其特征在于，在基板上涂布紫外线固化树脂，向紫外线固化树脂照射紫外线，使紫外线固化树脂预聚合，通过按压压制预聚合的紫外线固化树脂，向紫外线固化树脂照射紫外线，从而固化紫外线固化树脂。

84. 发明授权

US07895749B2 Method of manufacturing heat exchanger 有权
标题翻译：换热器的制造方法
公开(公告)号：US07895749B2
公开(公告)日：2011-03-01
申请号：US12382962
申请日：2009-03-27
申请人： Yoshihisa Eto , Naoto Takayanagi , Shoji Akiyama , Muneo Sakurada
发明人： Yoshihisa Eto , Naoto Takayanagi , Shoji Akiyama , Muneo Sakurada
IPC分类号： B23P15/26
CPC分类号： F28F9/18 , F28D1/0391 , F28D1/0535 , F28F3/025 , Y10T29/49391
摘要： A heat exchange tube is formed by using a sheet member not clad with a brazing material layer, with bonding regions at which ends of the sheet member are overlapped and brazed by using a brazing material. This structure reduces the extent to which the brazing material becomes dispersed while the heat exchange tube is brazed and the likelihood of dissolution due to erosion, which makes it possible to assure the desired product quality, such as corrosion resistance, even when a tube material with a smaller wall thickness is used.
摘要翻译：通过使用未包覆钎焊材料层的片材构件形成热交换管，其中，通过使用钎焊材料将片状构件的端部重叠并钎焊的接合区域。这种结构减少了钎焊材料在钎焊时的分散程度以及由于侵蚀导致的溶解的可能性，这使得即使当管材料具有耐腐蚀性时，也可以确保期望的产品质量，例如耐腐蚀性使用较小的壁厚。

85. 发明申请

US20100301455A1 METHOD FOR PRODUCING A BONDED SUBSTRATE 有权
标题翻译：生产粘结基材的方法
公开(公告)号：US20100301455A1
公开(公告)日：2010-12-02
申请号：US12744567
申请日：2008-11-27
申请人： Shoji Akiyama
发明人： Shoji Akiyama
IPC分类号： H01L29/12 , H01L21/762
CPC分类号： H01L21/187 , H01L21/76254 , H01L29/1054
摘要： A method for producing a bonded substrate having a Si1-xGex (0
摘要翻译：一种具有Si1-xGex（0＆lt; x＆lt; 1E; 1）膜的键合衬底的制造方法，其中已经引入了比以往任何时候的双轴应变。具体地，该方法至少包括以下步骤：提供施主晶片和具有低于施主晶片的热膨胀系数的处理晶片，将氢和惰性气体中的任何一种或两者的离子注入到供体晶片中以形成离子注入层，在施主晶片和处理晶片的至少一个接合表面上执行等离子体激活处理，将施主晶片接合到处理晶片，通过对离子注入施加机械冲击来分裂供体晶片层，在施主晶片的分割面上进行表面处理，并在分割面上外延生长Si1-xGex（0

86. 发明授权

US07310454B2 Photonic bandgap modulator, amplifier, demux, and TDM devices 失效
标题翻译：光子带隙调制器，放大器，解复用器和TDM器件
公开(公告)号：US07310454B2
公开(公告)日：2007-12-18
申请号：US10852386
申请日：2004-05-24
申请人： Shoji Akiyama , Lionel C. Kimerling , Kazumi Wada
发明人： Shoji Akiyama , Lionel C. Kimerling , Kazumi Wada
IPC分类号： G02F1/295 , G02B6/26 , G02B6/42
CPC分类号： G02F1/21 , G02F1/3136 , G02F2001/213 , G02F2202/32
摘要： An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.
摘要翻译：光学器件包括至少两个光子带隙晶体（PBG）堆叠，每个由高和低折射率材料的交替层组成。在所述至少两个光子带隙晶体堆叠之间的空腔区域中形成缺陷区域，以便提供反射由光学器件接收的光所需的特性。

87. 发明授权

US07011717B2 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US07011717B2
公开(公告)日：2006-03-14
申请号：US10929480
申请日：2004-08-31
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L31/036
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1–60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从控制到700℃的热处理的最高温度为20℃/秒以下，晶体缺陷密度为1.0×4×4×缺陷/ cm 2的硅晶片在晶片本体部分中> 3 <或更多，在深度的晶片表面层中的晶体缺陷密度为1.0×4×4×3/3或更小 0.5μm以下的晶体缺陷密度为0.15个/ cm 2以下在P-V值方面为1.0nm以下的表面粗糙度。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

88. 发明授权

US06988539B2 Heat exchanger 有权
标题翻译：热交换器
公开(公告)号：US06988539B2
公开(公告)日：2006-01-24
申请号：US10788474
申请日：2004-03-01
申请人： Soichi Kato , Shoji Akiyama
发明人： Soichi Kato , Shoji Akiyama
IPC分类号： F28F1/00
CPC分类号： B23K1/0012 , F28D1/0391 , F28F9/18
摘要： A heat exchanger comprising a heat exchange core (1) including a plurality of tubes (2) flowing a medium for heat exchange and a pair of tanks (4) to which ends of said tubes are connected, each tube formed by shaping a plate member (200) not clad with a row laminated brazing material and having a sacrifice layer (210) on an outer surface thereof and a plurality of recessed portions (203) formed on an outer surface of said sacrifice layer and filled with a brazing material (R).
摘要翻译：一种热交换器，包括：热交换芯（1），其包括流过用于热交换的介质的多个管（2）和连接所述管的端部的一对罐（4），每个管通过使板构件（200）不被行层叠钎焊材料包覆，并且在其外表面上具有牺牲层（210），并且在所述牺牲层的外表面上形成有多个凹部（203），并且填充有钎焊材料（R ）。

89. 发明申请

US20050063061A1 Process for fabrication of high reflectors by reversal of layer sequence and application thereof 失效
标题翻译：通过反转层序列制造高反射体的方法及其应用
公开(公告)号：US20050063061A1
公开(公告)日：2005-03-24
申请号：US10917209
申请日：2004-08-12
申请人： Felix Grawert , Shoji Akiyama , Kazumi Wada , Franz Kaertner
发明人： Felix Grawert , Shoji Akiyama , Kazumi Wada , Franz Kaertner
IPC分类号： G02B5/08 , H01S3/098 , F21V9/04 , G02B5/20
CPC分类号： G02B5/0833
摘要： An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.
摘要翻译：光学反射器包括光反射元件，其包括高折射率层和低折射率层的交替层。新的衬底粘结在光学反射元件上。反射元件中的层序顺序颠倒，使得首先以最低表面粗糙度生长的层暴露于最高的电场强度，并且最后粗糙度最高的层被深埋在多层叠层中。

90. 发明授权

US06806199B2 Method for manufacturing silicon mirror wafer, silicon mirror wafer, and heat treatment furnace 失效
标题翻译：硅镜片，硅镜片和热处理炉的制造方法
公开(公告)号：US06806199B2
公开(公告)日：2004-10-19
申请号：US09979084
申请日：2001-11-16
申请人： Norihiro Kobayashi , Shoji Akiyama
发明人： Norihiro Kobayashi , Shoji Akiyama
IPC分类号： H01L21302
CPC分类号： H01L21/3247 , C30B29/06 , C30B33/00
摘要： There are provided a manufacturing process for a mirror finished silicon wafer capable of manufacturing a mirror finished silicon wafer, having an excellent quality in which grown-in crystal defects are annihilated by heat-treating the silicon mirror finished wafer in a heat treatment in a gas atmosphere of high safety at a lower cost without selection of a heat treatment furnace for use in the heat treatment, a mirror finished silicon wafer having an excellent quality, and a heat treatment furnace preferably used in the manufacturing process. In the manufacturing process for a mirror finished silicon wafer comprising the steps of: connecting a reaction tube of a heat treatment furnace to a supply line for a non-oxidative raw material gas via a connection portion; supplying a non-oxidative gas into the reaction tube through the supply line and the connection portion; and heat-treating the mirror finished silicon wafer in the heat treatment furnace in an atmosphere of a non-oxidative gas, wherein a content of impurities in the non-oxidative gas supplied into the reaction tube is 3 ppm or less.
摘要翻译：提供了一种用于制造镜面成品硅晶片的镜面成品硅晶片的制造方法，其具有通过在气体的热处理中热处理硅镜成品晶片而消除生长的晶体缺陷的优良品质没有选择用于热处理的热处理炉，具有优异品质的镜面成品硅晶片，以及优选在制造过程中使用的热处理炉，成本较低的高安全性气氛。在镜面成型硅晶片的制造工序中，包括以下步骤：经由连接部将热处理炉的反应管与非氧化性原料气体的供给管连接; 通过供应管线和连接部分将非氧化性气体供应到反应管中; 在非氧化性气体气氛中，在热处理炉中对镜面成品硅片进行热处理，其中供给反应管的非氧化性气体中的杂质含量为3ppm以下。

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