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81. 发明申请

US20100103563A1 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 审中-公开
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US20100103563A1
公开(公告)日：2010-04-29
申请号：US12289517
申请日：2008-10-29
申请人： Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Toshiyuki Ayukawa
发明人： Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetoresistive element includes first and second shield portions and an MR stack. Each of the first and second shield portions includes a shield bias magnetic field applying layer, and a closed-magnetic-path-forming portion that forms a closed magnetic path in conjunction of the shield bias magnetic field applying layer. The closed-magnetic-path-forming portion includes a single magnetic domain portion. The MR stack is sandwiched between the respective single magnetic domain portions of the first and second shield portions. The closed-magnetic-path-forming portion includes a magnetic-path-expanding portion that forms a magnetic path, the magnetic path being a portion of the closed magnetic path and located between the shield bias magnetic field applying layer and the single magnetic domain portion. The magnetic-path-expanding portion has two end portions located at both ends of the magnetic path, and a middle portion located between the two end portions. A cross section of the magnetic path at the middle portion is greater in width than a cross section of the magnetic path at each of the two end portions.
摘要翻译：磁阻元件包括第一和第二屏蔽部分和MR堆叠。第一和第二屏蔽部分中的每一个包括屏蔽偏置磁场施加层和闭合磁路形成部分，其结合屏蔽偏置磁场施加层形成闭合磁路。封闭磁路形成部分包括单个磁畴部分。 MR堆叠被夹在第一和第二屏蔽部分的相应单个磁畴部分之间。闭磁路形成部分包括形成磁路的磁路扩展部分，磁路是封闭磁路的一部分，位于屏蔽偏置磁场施加层和单磁畴部分之间。磁路扩展部分具有位于磁路两端的两个端部和位于两个端部之间的中间部分。在中间部分处的磁路的横截面的宽度大于在两个端部中的每一个处的磁路的横截面。

82. 发明申请

US20090190272A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20090190272A1
公开(公告)日：2009-07-30
申请号：US12019202
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/398 , H01L43/08
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein said magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is interposed between them, wherein said first shield layer, and said second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and said first ferromagnetic layer, and said second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of said first shield layer and said second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magnetoresistive changes so that much higher reliability is achievable.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流其中所述磁阻单元包括非磁性中间层，以及层叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层介于它们之间，其中所述第一屏蔽层和所述第二屏蔽层在磁化方向上由磁化方向控制装置控制，并且所述第一铁磁层和所述第二铁磁层在磁性的影响下接收作用，使得存在产生相互磁化相反方向的反平行磁化状态所述第一屏蔽层的动作和所述第二屏蔽层。因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求记录密度此外，可以获得稳定的磁阻变化，从而可实现更高的可靠性。

83. 发明授权

US07881023B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US07881023B2
公开(公告)日：2011-02-01
申请号：US12019202
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/398 , H01L43/08
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein the magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them, wherein the first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流在叠层方向上，其中所述磁阻单元包括非磁性中间层，以及堆叠并形成所述非磁性中间层的第一铁磁层和第二铁磁层，其中所述第一屏蔽层和所述第二屏蔽层在磁化方向上由磁化方向控制装置控制，并且第一铁磁层和第二铁磁层受到磁力的影响而产生相互磁化相反方向产生的反平行磁化状态的动作第一屏蔽层的动作和第二屏蔽层。

84. 发明授权

US07876535B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US07876535B2
公开(公告)日：2011-01-25
申请号：US12019205
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.
摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合，应用层。非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

85. 发明申请

US20090201612A1 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US20090201612A1
公开(公告)日：2009-08-13
申请号：US12028243
申请日：2008-02-08
申请人： Koji SHIMAZAWA , Tsutomu Chou , Daisuke Miyauchi
发明人： Koji SHIMAZAWA , Tsutomu Chou , Daisuke Miyauchi
IPC分类号： G11B5/33 , H01L43/08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/398 , G11B2005/3996 , H01L43/08
摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them from above and below, with a sense current applied in the stacking direction, wherein said magnetoresistive unit comprises a non-magnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元从上方和下方夹在它们之间，其中所述磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层夹在它们之间。

86. 发明授权

US08014108B2 Magnetoresistive device of the CPP type, utilizing insulating layers interposed in shield layers to form a closed magnetic path usable in a disk system 有权
标题翻译： CPP型的磁阻器件，利用介于屏蔽层中的绝缘层形成可用于盘系统中的封闭磁路
公开(公告)号：US08014108B2
公开(公告)日：2011-09-06
申请号：US12028243
申请日：2008-02-08
申请人： Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi
发明人： Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/398 , G11B2005/3996 , H01L43/08
摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them from above and below, with a sense current applied in the stacking direction, wherein said magnetoresistive unit comprises a non-magnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them.
摘要翻译：本发明提供了CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及第一屏蔽层和第二屏蔽层，它们被定位和形成，使得磁阻单元从上方和下方夹在它们之间，其中所述磁阻单元包括非磁性中间层，并且堆叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层夹在它们之间。

87. 发明申请

US20090190268A1 MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型的磁性装置和磁盘系统
公开(公告)号：US20090190268A1
公开(公告)日：2009-07-30
申请号：US12019205
申请日：2008-01-24
申请人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
发明人： Takahiko Machita , Koji Shimazawa , Daisuke Miyauchi , Tsutomu Chou
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.
摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合，应用层。非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。

88. 发明授权

US08570843B2 Thermally assisted magnetic head, magnetic head device and magnetic recording/reproducing apparatus including a recording element and a near-field light generating element 有权
标题翻译：热辅助磁头，磁头装置和包括记录元件和近场光产生元件的磁记录/再现装置
公开(公告)号：US08570843B2
公开(公告)日：2013-10-29
申请号：US13402318
申请日：2012-02-22
申请人： Kei Hirata , Kosuke Tanaka , Tsutomu Chou , Susumu Aoki , Makoto Isogai , Tetsuya Roppongi
发明人： Kei Hirata , Kosuke Tanaka , Tsutomu Chou , Susumu Aoki , Makoto Isogai , Tetsuya Roppongi
IPC分类号： G11B11/00
CPC分类号： G11B5/313 , G11B5/3116 , G11B5/314 , G11B5/3146 , G11B5/6088 , G11B2005/0021
摘要： The present invention provides a thermally assisted magnetic head with improved recording performance. The thermally assisted magnetic head includes a recording element and a near-field light generating element. The recording element includes a main pole appearing on a medium-facing surface, and a bit inversion starting region intended to be a maximum recording magnetic field generating position is formed at a leading edge of the main pole. The near-field light generating element is located on a leading side of the main pole and capable of creating a heating spot due to a near-field light on a near-field light generating end face appearing on the medium-facing surface. The bit inversion starting region is located within one-half of a diameter of the heating spot from a center of the heating spot.
摘要翻译：本发明提供了具有改进的记录性能的热辅助磁头。热辅助磁头包括记录元件和近场光产生元件。记录元件包括出现在面向中间的表面上的主极，并且在主极的前缘形成旨在成为最大记录磁场产生位置的位反转起始区。近场光产生元件位于主极的前导侧，并且能够在出现在面向中间的表面上的近场光产生端面上产生由于近场光产生的加热点。位反转起始区域位于加热点的直径从加热点的中心的一半的范围内。

89. 发明授权

US08970995B2 Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer 有权
标题翻译：磁阻效应元件具有在磁性层和非磁性中间层之间的界面处含有Zn的层
公开(公告)号：US08970995B2
公开(公告)日：2015-03-03
申请号：US12382140
申请日：2009-03-10
申请人： Tsutomu Chou , Shinji Hara , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Tsutomu Chou , Shinji Hara , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/127 , B82Y25/00 , B82Y10/00 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn.
摘要翻译：薄膜磁头包括具有以下结构的磁阻效应（MR）层叠体：其中至少一个磁性层的磁化方向根据外部磁场而变化的第一和第二磁性层; 第一磁性层设置在层叠方向的下侧; 第二磁性层设置在层叠方向的上侧; 由夹在第一和第二磁性层之间的ZnO制成的非磁性中间层; 第一中间界面层设置在第一磁性层和非磁性中间层之间的界面处; 并且在非磁性中间层和第二磁性层之间的界面处设置第二中间界面层。至少第一中间界面层含有Ag和Zn，或Au和Zn。

90. 发明授权

US08274764B2 Magneto-resistive effect element provided with GaN spacer layer 有权
标题翻译：具有GaN间隔层的磁阻效应元件
公开(公告)号：US08274764B2
公开(公告)日：2012-09-25
申请号：US12382137
申请日：2009-03-10
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.
摘要翻译：磁阻效应（MR）元件包括第一磁性层和第二磁性层，其中第一和第二磁性层的磁化方向的相对角度根据外部磁场而改变; 以及设置在第一磁性层和第二磁性层之间的间隔层。间隔层包含氮化镓（GaN）作为主要成分。根据本发明的一个实施例的薄膜磁头具有以下结构：上述具有第一磁性层和第二磁性层作为自由层的MR元件，其中两层中的磁化方向根据外部磁场变化; 偏置磁场施加层，其在与空气轴承表面（ABS）正交的方向上对第一和第二磁性层施加偏置磁场; 偏置磁场施加层形成在从ABS看到的MR元件的后侧; 并且感测电流在与MR元件的层表面正交的方向上流动。

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