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81. 发明申请

US20100327247A1 METHOD AND SYSTEM OF USING NANOTUBE FABRICS AS JOULE HEATING ELEMENTS FOR MEMORIES AND OTHER APPLICATIONS 有权
标题翻译：使用纳米管织物作为记忆元件和其他应用的加热元件的方法和系统
公开(公告)号：US20100327247A1
公开(公告)日：2010-12-30
申请号：US12066053
申请日：2006-09-06
申请人： Jonathan W. Ward , Thomas Rueckes , Mitchell Meinhold , Brent M. Segal
发明人： Jonathan W. Ward , Thomas Rueckes , Mitchell Meinhold , Brent M. Segal
IPC分类号： H01L45/00 , H01L21/02 , H05B1/00
CPC分类号： H01L45/1286 , B82Y10/00 , G11C13/0004 , G11C13/025 , G11C2213/81 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144
摘要： Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includes providing an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material. A plurality of designs using various geometric orientations of nanotube fabrics, phase change materials, and drive and detection circuitry is disclosed. Additionally, methods of fabricating nanotube heat emitters are disclosed.
摘要翻译：使用纳米管元件作为焦耳加热元件用于存储器和其他应用的方法和系统。在一个方面，一种方法包括通过纳米管元件提供由驱动电路调节的电刺激，以加热邻近的物品。此外，检测电路电测量物品的状态。在优选实施例中，由纳米管元件加热的物品是相变材料。在记忆应用中，本发明可以用作能够使用少量电流以在硫族化物中快速，大的温度变化的小规模CRAM 材料。在所公开的发明的各种实施例中，纳米管元件由无纺布纳米管织物组成，该无纺布纳米管织物从支撑物悬挂并且邻近相变材料定位，或者设置在基底上并与相变材料直接接触。公开了使用纳米管织物，相变材料以及驱动和检测电路的各种几何取向的多个设计。另外，公开了制造纳米管热发射体的方法。

82. 发明授权

US07817458B2 Hybrid circuit having nanotube memory cells 有权
标题翻译：具有纳米管存储单元的混合电路
公开(公告)号：US07817458B2
公开(公告)日：2010-10-19
申请号：US12030470
申请日：2008-02-13
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , Y10S977/724 , Y10S977/734 , Y10S977/742 , Y10S977/942 , Y10S977/943
摘要： A hybrid memory system having electromechanical memory cells is discussed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
摘要翻译：讨论了具有机电存储器单元的混合存储器系统。存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。存取电路由半导体电路元件构成。

83. 发明授权

US07511318B2 Electromechanical memory array using nanotube ribbons and method for making same 有权
标题翻译：使用纳米管带的机电存储器阵列及其制造方法
公开(公告)号：US07511318B2
公开(公告)日：2009-03-31
申请号：US11942056
申请日：2007-11-19
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L29/00 , H01L29/84
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

84. 发明授权

US07504051B2 Applicator liquid for use in electronic manufacturing processes 有权
标题翻译：用于电子制造工艺的涂布器液体
公开(公告)号：US07504051B2
公开(公告)日：2009-03-17
申请号：US10860432
申请日：2004-06-03
申请人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent M. Segal
发明人： Rahul Sen , Ramesh Sivarajan , Thomas Rueckes , Brent M. Segal
IPC分类号： C01B31/02 , D01F9/12 , H01L29/08
CPC分类号： B82Y10/00 , H01C17/0652 , H01L51/0003 , H01L51/0025 , H01L51/0048 , Y10S977/742 , Y10S977/743 , Y10S977/753 , Y10T428/29 , Y10T428/2982 , Y10T428/30
摘要： Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid containing nanotubes for use in an electronics fabrication process includes a solvent containing a plurality of nanotubes. The nanotubes are at a concentration of greater than 1 mg/L. The nanotubes are pretreated to reduce the level of metallic and particulate impurities to a preselected level, and the preselected metal and particulate impurities levels are selected to be compatible with an electronics manufacturing process. The solvent also is selected for compatibility with an electronics manufacturing process.
摘要翻译：描述了一些可旋涂的液体和应用技术，其可以用于形成纳米管膜或受控特性的织物。包含用于电子制造工艺的纳米管的可旋涂的液体包括含有多个纳米管的溶剂。纳米管的浓度大于1mg / L。预处理纳米管以将金属和颗粒杂质的水平降低到预选的水平，并且预选的金属和微粒杂质水平被选择为与电子制造工艺兼容。溶剂也被选择用于与电子制造工艺的兼容性。

85. 发明申请

US20080192532A1 HYBRID CIRCUIT HAVING NANOTUBE MEMORY CELLS 有权
标题翻译：具有纳米管存储细胞的混合电路
公开(公告)号：US20080192532A1
公开(公告)日：2008-08-14
申请号：US12030470
申请日：2008-02-13
申请人： BRENT M. SEGAL , Darren K. Brock , Thomas Rueckes
发明人： BRENT M. SEGAL , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , Y10S977/724 , Y10S977/734 , Y10S977/742 , Y10S977/942 , Y10S977/943
摘要： A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
摘要翻译：公开了一种具有机电存储器单元的混合存储器系统。存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。存取电路由半导体电路元件构成。

86. 发明授权

US07342818B2 Hybrid circuit having nanotube electromechanical memory 有权
标题翻译：具有纳米管机电存储器的混合电路
公开(公告)号：US07342818B2
公开(公告)日：2008-03-11
申请号：US10964150
申请日：2004-10-13
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , Y10S977/724 , Y10S977/734 , Y10S977/742 , Y10S977/942 , Y10S977/943
摘要： A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
摘要翻译：公开了一种具有机电存储器单元的混合存储器系统。存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。存取电路由半导体电路元件构成。

87. 发明授权

US07335528B2 Methods of nanotube films and articles 有权
标题翻译：纳米管薄膜和制品的方法
公开(公告)号：US07335528B2
公开(公告)日：2008-02-26
申请号：US11007752
申请日：2004-12-08
申请人： Thomas Rueckes , Brent M. Segal
发明人： Thomas Rueckes , Brent M. Segal
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , H01L27/1203 , H01L29/413 , H01L51/0048 , H01L51/444 , H01L2221/1094 , Y10S977/75 , Y10S977/778 , Y10S977/843 , Y10S977/857 , Y10S977/888
摘要： Nanotube films and articles and methods of making the same. A conductive article includes an aggregate of nanotube segments which contact other nanotube segments to define a plurality of conductive pathways along the article. Segments may have different lengths and may be shorter than the article. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining within the fabric a pattern corresponding to the conductive article. The nanotube fabric may be grown on the substrate using a catalyst, such as a gas phase a metallic gas phase catalyst. The nanotube fabric may be formed by depositing a solution of suspended nanotubes on the substrate, which may be spun to create a spin-coating of the solution. The solution may be deposited by dipping the substrate into the solution. The nanotube fabric may be formed by spraying an aerosol having nanotubes onto the substrate.
摘要翻译：纳米管薄膜和制作方法和制作方法。导电制品包括与其他纳米管段接触以限定沿着制品的多个导电路径的纳米管段的聚集体。段可以具有不同的长度并且可以比文章短。导电制品可以通过在基底上形成纳米管织物而在基底上制成，并且在织物内限定对应于导电制品的图案。纳米管织物可以使用催化剂如气相金属气相催化剂在基底上生长。可以通过将悬浮的纳米管溶液沉积在基底上形成纳米管织物，该溶液可以被纺丝以产生溶液的旋涂。可以通过将基底浸入溶液中来沉积溶液。纳米管织物可以通过将具有纳米管的气溶胶喷射到基底上而形成。

88. 发明授权

US07298016B2 Electromechanical memory array using nanotube ribbons and method for making same 有权
标题翻译：使用纳米管带的机电存储器阵列及其制造方法
公开(公告)号：US07298016B2
公开(公告)日：2007-11-20
申请号：US10852880
申请日：2004-05-25
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： H01L29/84 , B81B3/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L27/10 , Y10S977/724 , Y10S977/742 , Y10S977/796 , Y10S977/856 , Y10S977/888 , Y10S977/943 , Y10T428/24893 , Y10T428/24917
摘要： Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.
摘要翻译：公开了诸如存储单元的机电电路及其制造方法。这些电路包括具有导电迹线和从衬底表面延伸的支撑体的结构，以及由支撑体悬挂的穿过导电迹线的纳米管带，其中每个带包括一个或多个纳米管。电 - 机械电路元件通过提供具有导电迹线和支撑件的结构来制造，其中支撑件从基板的表面延伸。在载体上提供一层纳米管，并且选择性地去除纳米管层的部分以形成穿过导电迹线的纳米管带。每个带包括一个或多个纳米管。

89. 发明授权

US07176505B2 Electromechanical three-trace junction devices 失效
标题翻译：机电三迹交界器件
公开(公告)号：US07176505B2
公开(公告)日：2007-02-13
申请号：US10802900
申请日：2004-03-17
申请人： Thomas Rueckes , Brent M. Segal , Claude Bertin
发明人： Thomas Rueckes , Brent M. Segal , Claude Bertin
IPC分类号： H01L27/10
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/77 , H01H1/0094 , Y10S977/742 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the first and second conductive elements. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuits may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other of the conductive elements may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.
摘要翻译：三轨迹机电回路及其使用方法。电路包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。绝缘层设置在第一和第二导电元件之一上。响应于施加到第一和第二导电元件和纳米管带中的至少一个的电刺激，纳米管带可朝着第一和第二导电元件中的至少一个移动。这样的电路可以形成为电池阵列。可以使用导电元件之一来产生引导纳米管带与导电元件接触的吸引力，并且另一导电元件可用于产生吸引力以将纳米管带从接触导电元件。导电迹线可以彼此对准或不对准。

90. 发明授权

US06836424B2 Hybrid circuit having nanotube electromechanical memory 有权
标题翻译：具有纳米管机电存储器的混合电路
公开(公告)号：US06836424B2
公开(公告)日：2004-12-28
申请号：US10379973
申请日：2003-03-05
申请人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
发明人： Brent M. Segal , Darren K. Brock , Thomas Rueckes
IPC分类号： G11C1100
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C2213/16 , G11C2213/77 , G11C2213/81 , Y10S977/724 , Y10S977/734 , Y10S977/742 , Y10S977/942 , Y10S977/943
摘要： A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.
摘要翻译：公开了一种具有机电存储器单元的混合存储器系统。存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。存取电路由半导体电路元件构成。

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