专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20060157804A1 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060157804A1
公开(公告)日：2006-07-20
申请号：US11287482
申请日：2005-11-28
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L29/76
CPC分类号： H01L29/8122 , H01L29/2003 , H01L29/66856
摘要： A first SiO2 thin film, a tungsten gate electrode, and a second SiO2 thin film are selectively formed on a first n+-type GaN contact semiconductor layer in that order and in a multilayer film structure having the three layers, a stripe-shaped opening is formed. Via the opening, an undoped GaN channel semiconductor layer and the second n+-type GaN contact semiconductor layer are formed so that both the layers are regrown by, for example, metal organic chemical vapor deposition. A source electrode and a drain electrode are formed so as to contact the corresponding second and first n+-type GaN contact semiconductor layers. The regrown undoped GaN channel semiconductor layer and the regrown second n+-type GaN contact semiconductor layer are horizontally grown portions and hence, the contact area of the electrode can be made larger than the area of the opening.
摘要翻译：第一个SiO 2薄膜，钨栅电极和第二SiO 2薄膜选择性地形成在第一n + + / GaN接触半导体层，并且在具有三层的多层膜结构中形成条形开口。通过开口，形成未掺杂的GaN沟道半导体层和第二n + + + GaN接触半导体层，使得这两个层通过例如金属有机化学气相沉积而再生长。源电极和漏电极形成为与相应的第二和第n + +型GaN接触半导体层接触。再生未掺杂的GaN沟道半导体层和再生长的第二n + + + GaN接触半导体层是水平生长的部分，因此可以使电极的接触面积大于开口的面积。

82. 发明申请

US20060124962A1 Field effect transistor and method for fabricating the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060124962A1
公开(公告)日：2006-06-15
申请号：US11297386
申请日：2005-12-09
申请人： Tetsuzo Ueda , Hidetoshi Ishida , Tsuyoshi Tanaka
发明人： Tetsuzo Ueda , Hidetoshi Ishida , Tsuyoshi Tanaka
IPC分类号： H01L31/0328
CPC分类号： H01L21/28581 , H01L29/0843 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer. A source electrode and a drain electrode are formed on the second semiconductor layer to be spaced from each other. An opening having an insulating film on its inner wall is formed in a portion of the second semiconductor layer sandwiched between the source electrode and the drain electrode so as to expose the first semiconductor layer therein. A gate electrode is formed in the opening to be in contact with the insulating film and the first semiconductor layer on the bottom of the opening.
摘要翻译：场效应晶体管包括由多个半导体膜的多层构成的第一半导体层和形成在第一半导体层上的第二半导体层。源电极和漏电极形成在第二半导体层上以彼此间隔开。在夹在源电极和漏极之间的第二半导体层的一部分中形成有在其内壁上具有绝缘膜的开口，以便在其中露出第一半导体层。在开口部形成有与绝缘膜和开口底部的第一半导体层接触的栅电极。

83. 发明申请

US20060056473A1 Semiconductor light emitting element and method for fabricating the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20060056473A1
公开(公告)日：2006-03-16
申请号：US11195625
申请日：2005-08-03
申请人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
发明人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18347 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S2301/166 , H01S2301/176
摘要： A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.
摘要翻译：表面发射激光元件包括形成为具有凸形横截面的半导体多层膜的台面结构。无机材料的第一绝缘膜形成在台面结构的侧面上，在第一绝缘膜上形成树脂层以填充台面结构周围的空间。在树脂层上形成无机材料的第二绝缘膜，在第二绝缘膜和台面结构上形成具有露出台面结构的顶面部分的电极开口的上接触电极。利用这种结构，可以抑制元件制造过程中的树脂层的氧化和改变，以便不产生间隙而埋入台面结构。因此，可以提供高可靠性的半导体发光元件。

84. 发明申请

US20060038191A1 Semiconductor light emitting device 失效
公开(公告)号：US20060038191A1
公开(公告)日：2006-02-23
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

85. 发明授权

US06919641B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06919641B2
公开(公告)日：2005-07-19
申请号：US10462744
申请日：2003-06-17
申请人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/022 , H01L25/075 , H01S5/02 , H01S5/40 , H01L23/52
CPC分类号： H01L24/95 , H01L25/0753 , H01L2224/95085 , H01L2224/95146 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01033 , H01L2924/01049 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/15165 , H01S5/02252 , H01S5/4031 , H01L2924/15153 , H01L2924/00
摘要： A semiconductor device includes: a substrate having in its principal surface first and second recessed portions formed adjacent to each other; and first and second semiconductor laser chips each having a portion that is inserted in one of the recessed portions. The depth of the recessed portions is smaller than the height of the first and second semiconductor laser chips that are disposed in the recessed portions.
摘要翻译：半导体器件包括：基板，其主表面具有彼此相邻形成的第一和第二凹部; 以及第一和第二半导体激光器芯片，每个半导体激光器芯片具有插入到一个凹部中的一部分。凹部的深度小于设置在凹部中的第一和第二半导体激光器芯片的高度。

86. 发明授权

US06861335B2 Method for fabricating a semiconductor device that includes light beam irradiation to separate a semiconductor layer from a single crystal substrate 失效
标题翻译：制造半导体器件的方法，该半导体器件包括从单晶衬底分离半导体层的光束照射
公开(公告)号：US06861335B2
公开(公告)日：2005-03-01
申请号：US10292928
申请日：2002-11-13
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L21/268 , H01L29/20 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/28 , H01L33/32 , H01L33/34 , H01L33/44 , H01S5/02 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/0254 , H01L21/268 , H01L29/2003 , H01L33/025 , H01L33/06 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/0218 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown layer is adhered to a recipient substrate. The back surface of the single-crystal substrate is irradiated with a light beam such as a laser beam or a bright line spectrum from a mercury vapor lamp such that the epitaxially grown layer and the single-crystal substrate are separated from each other. Since the forbidden band of the spacer layer is smaller than that of the single-crystal substrate, it is possible to separate the thin semiconductor layer from the substrate by decomposing or fusing the spacer layer, while suppressing the occurrence of a crystal defect or a crack in the epitaxially grown layer.
摘要翻译：在单晶衬底上形成间隔层，并且在间隔层上进一步形成由含有氮化物等的III-V族化合物半导体层构成的外延生长层。外延生长层粘附到受体基底上。单晶衬底的背面用水银蒸气灯等激光束或亮线光谱照射，使得外延生长层和单晶衬底彼此分离。由于间隔层的禁带比单晶基板的禁带宽小，所以可以通过分隔或融合间隔层而将薄半导体层与基板分离，同时抑制晶体缺陷或裂纹的发生在外延生长层。

87. 发明授权

US06797532B2 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US06797532B2
公开(公告)日：2004-09-28
申请号：US10382938
申请日：2003-03-07
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L2100
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/7605 , H01L33/145 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/2214 , H01S5/2215 , H01S5/2231 , H01S5/2232 , H01S5/227 , H01S5/32341 , H01S2304/04 , H01S2304/12
摘要： A light emitting layer made of a group III-V nitride semiconductor is formed between a first semiconductor layer made of an n-type group III-V nitride semiconductor and a second semiconductor layer made of a p-type group III-V nitride semiconductor. In side portions of the second semiconductor layer, oxidized regions are formed through the oxidization of the second semiconductor layer itself so as to be spaced apart from each other in the direction parallel to the plane of the light emitting layer. A p-side electrode is formed across the entire upper surface of the second semiconductor layer including the oxidized regions, and an n-side electrode is formed on one surface of the first semiconductor layer that is away from the second semiconductor layer.

88. 发明授权

US06190629B1 Organic acid scrubber and methods 有权
标题翻译：有机酸洗涤器和方法
公开(公告)号：US06190629B1
公开(公告)日：2001-02-20
申请号：US09293443
申请日：1999-04-16
申请人： Glenn S. Solomon , David J. Miller , Tetsuzo Ueda
发明人： Glenn S. Solomon , David J. Miller , Tetsuzo Ueda
IPC分类号： C01C112
CPC分类号： B01D53/18 , B01D53/14 , B01D53/1493 , B01D2251/70 , C23C16/4412 , Y02C20/30
摘要： A scrubber assembly for removal of water soluble and/or alkaline gases from an exhaust stream uses a scrubber mixture contained within at least one scrubber vessel. Preferably the scrubber mixture include a liquid phase including an aqueous acid solution, and solid phase including a solid organic acid. Preferably, the scrubber mixture includes a solid carboxylic acid having low toxicity and low corrosiveness to system components. In one embodiment, a plurality of scrubber vessels, each containing the scrubber mixture are connected in series. The scrubber assembly may further include an indicator tank containing an indicator mixture. The pH of the scrubber mixture and/or indicator mixture may be monitored, thereby making operation of the system not only simpler and more reliable, but also more efficient. A method for removal of water soluble and/or alkaline gases from an exhaust stream is also disclosed.
摘要翻译：用于从排气流中除去水溶性和/或碱性气体的洗涤器组件使用包含在至少一个洗涤器容器内的洗涤器混合物。优选地，洗涤器混合物包括含有酸水溶液的液相和包含固体有机酸的固相。优选地，洗涤器混合物包括对系统组分具有低毒性和低腐蚀性的固体羧酸。在一个实施例中，每个含有洗涤器混合物的洗涤器容器串联连接。洗涤器组件还可以包括含有指示剂混合物的指示器罐。可以监测洗涤器混合物和/或指示剂混合物的pH，从而使系统的操作不仅更简单和更可靠，而且更有效。还公开了一种从废气流中除去水溶性和/或碱性气体的方法。

89. 发明授权

US08816366B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08816366B2
公开(公告)日：2014-08-26
申请号：US13105337
申请日：2011-05-11
申请人： Toshiyuki Takizawa , Tetsuzo Ueda
发明人： Toshiyuki Takizawa , Tetsuzo Ueda
IPC分类号： H01L33/02 , H01L21/02 , B82Y20/00 , H01L33/32 , H01S5/32 , H01S5/223 , H01L33/24 , H01L33/16 , H01S5/20 , H01S5/343
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/02636 , H01L33/16 , H01L33/24 , H01L33/32 , H01S5/2009 , H01S5/2237 , H01S5/3202 , H01S5/3216 , H01S5/34333 , H01S2304/04
摘要： An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.
摘要翻译：本发明的目的是提供一种氮化物半导体器件，其将发光波长向较长波长侧移动而不降低发光效率，并且根据本发明的实施方式的氮化物半导体器件包括：具有（0001 ）面和除（0001）面之外的平面; 以及与GaN层接触并包含铟的InGaN层，并且InGaN层在与（0001）面以外的平面接触的部分中的铟成分比在与（0001）面接触的部分相比更高。

90. 发明授权

US08692292B2 Semiconductor device including separated gate electrode and conductive layer 有权
标题翻译：半导体器件包括分离的栅电极和导电层
公开(公告)号：US08692292B2
公开(公告)日：2014-04-08
申请号：US13356156
申请日：2012-01-23
申请人： Hidekazu Umeda , Tetsuzo Ueda
发明人： Hidekazu Umeda , Tetsuzo Ueda
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm−3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.
摘要翻译：半导体器件包括：衬底101，包括形成在衬底101上的多个氮化物半导体层的第一氮化物半导体层104S，并具有沟道区; 第二半导体层105，其形成在第一氮化物半导体层104S上，并且具有与沟道区的导电类型相反的导电类型; 与第二半导体层105接触的导体层，具有载流子浓度为1×1018 cm -3以上的金属层107或高载流子浓度半导体层; 形成在导电层上的绝缘层110; 形成在绝缘层110上的栅电极111; 以及形成为横向夹持第二半导体层105的源电极108和漏电极109。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式