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81. 发明授权

US06369905B1 Information processing apparatus and output apparatus 失效
标题翻译：信息处理装置和输出装置
公开(公告)号：US06369905B1
公开(公告)日：2002-04-09
申请号：US08076784
申请日：1993-06-15
申请人： Shunya Mitsuhashi , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Akihiro Shimura , Nobuhiko Sato , Takanori Nishijima , Masaki Unishi
发明人： Shunya Mitsuhashi , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Akihiro Shimura , Nobuhiko Sato , Takanori Nishijima , Masaki Unishi
IPC分类号： G06K1500
CPC分类号： G06K15/00 , G06F3/033 , G06F3/12 , G06F3/1294
摘要： An information processing apparatus for communicating information with an information device. The information processing apparatus accesses virtual device image data representing an image of the information device, obtains status information representing a status of the information device from the information device through a bidirectional interface, and controls a display to display a virtual device image of the information device based on the accessed virtual device image data and the obtained status information. The virtual device image is a visual representation of the physical appearance of the information device in the status represented by the obtained status information.
摘要翻译：一种用于与信息装置通信信息的信息处理装置。信息处理设备访问表示信息设备的图像的虚拟设备图像数据，通过双向接口从信息设备获取表示信息设备的状态的状态信息，并且控制显示器以显示信息设备的虚拟设备图像基于所访问的虚拟设备图像数据和所获得的状态信息。虚拟设备图像是由获取的状态信息表示的状态中的信息设备的物理外观的可视表示。

82. 发明授权

US06335269B1 Semiconductor substrate and method for producing the same 有权
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06335269B1
公开(公告)日：2002-01-01
申请号：US09390296
申请日：1999-09-03
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： H01L2120
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661
摘要： The present invention provides a semiconductor substrate comprising a non-porous monocrystalline layer with decreased crystal defects which is formed on a porous silicon layer, and a method of producing the substrate. The method of producing the substrate comprises a heat treatment step of heat-treating a porous layer in an atmosphere not containing a silicon type gas, and a step of growing a non-porous monocrystalline silicon layer on the porous silicon layer, wherein the heat treatment step is executed such that the etched thickness of silicon is 2 nm or less and that the rate of change r for the Haze value of the porous silicon layer defined by (the Haze value after the heat treatment)/(the Haze value before the heat treatment) satisfies the relationship between 1≦r≦3.5.
摘要翻译：本发明提供了一种包括形成在多孔硅层上的具有减少的晶体缺陷的非多孔单晶层的半导体衬底及其制造方法。制造基板的方法包括在不含硅型气体的气氛中热处理多孔层的热处理步骤和在多孔硅层上生长无孔单晶硅层的步骤，其中热处理执行步骤，使得硅的蚀刻厚度为2nm以下，并且由（热处理后的雾度值）/（加热前的雾度值）定义的多孔硅层的雾度值的变化率r 处理）满足1 <= r <= 3.5的关系。

83. 发明授权

US06290062B1 Packaging for sports equipment 有权
公开(公告)号：US06290062B1
公开(公告)日：2001-09-18
申请号：US09444873
申请日：1999-11-22
申请人： Takahisa Ohno , Nobuhiko Sato
发明人： Takahisa Ohno , Nobuhiko Sato
IPC分类号： B65D8500
摘要： Packaging for sports equipment has an enclosure and a hologram formed on at least a portion thereof for diffusely reflecting incident light. A marking layer is formed on the hologram and of an organic ink, an inorganic ink, or an ink containing a dye or pigment having the color attributes of lightness, saturation and hue, at least one of which varies due to interference with diffusely reflected light from the hologram. Alternatively, the marking layer is formed on the first hologram by laminating one or more second hologram layers thereon. This construction gives the packaging a highly decorative and elegant appearance.

84. 发明授权

US06254794B1 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
标题翻译：用于蚀刻多孔硅的蚀刻溶液，使用蚀刻溶液的蚀刻方法和使用蚀刻溶液制备半导体部件的方法
公开(公告)号：US06254794B1
公开(公告)日：2001-07-03
申请号：US09298054
申请日：1999-04-22
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21302
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.
摘要翻译：一种制备半导体部件的方法包括：形成具有非多孔硅单晶层和多孔硅层的衬底;将具有由绝缘材料制成的表面的另一衬底结合到所述单晶层的表面; 通过浸渍在蚀刻溶液中来除去多孔硅层。

85. 发明授权

US6121117A Process for producing semiconductor substrate by heat treating 失效
标题翻译：通过热处理制造半导体衬底的方法
公开(公告)号：US6121117A
公开(公告)日：2000-09-19
申请号：US118872
申请日：1998-07-20
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： C30B33/00 , H01L21/20 , H01L21/306 , H01L21/3105 , H01L21/324 , H01L21/762 , H01L31/18 , H01L21/30
CPC分类号： H01L21/3247 , C30B29/06 , C30B33/00 , H01L21/2022 , H01L21/30604 , H01L21/31051 , H01L21/324 , H01L21/76251 , H01L21/76256 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
摘要翻译：一种制造半导体衬底的方法包括在还原气氛中对其中具有单晶的衬底进行热处理。

86. 发明授权

US5854123A Method for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US5854123A
公开(公告)日：1998-12-29
申请号：US729722
申请日：1996-10-07
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/762 , H01L27/12 , H01L31/18 , H01L21/76
CPC分类号： H01L21/02032 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76251 , H01L21/76254 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.
摘要翻译：提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。此时，在多孔Si层上外延生长无孔单晶Si层。此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。随后，进行选择性蚀刻以去除多孔Si层。

87. 发明授权

US5767020A Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
标题翻译：用于蚀刻多孔硅的蚀刻溶液，使用蚀刻溶液的蚀刻方法和使用蚀刻溶液制备半导体部件的方法
公开(公告)号：US5767020A
公开(公告)日：1998-06-16
申请号：US835381
申请日：1992-02-14
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21/20 , H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/30604 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.
摘要翻译：一种制备半导体部件的方法包括：形成具有无孔硅单晶层和多孔硅层的衬底; 将具有由绝缘材料制成的表面的另一衬底结合到单晶层的表面; 并通过浸入蚀刻溶液中蚀刻去除多孔硅层。

88. 发明授权

US5764867A Image recording with variable number of tones 失效
标题翻译：具有可变音量的图像记录
公开(公告)号：US5764867A
公开(公告)日：1998-06-09
申请号：US109575
申请日：1993-08-17
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： G06K15/02 , H04N1/32 , H04N1/41 , G06K15/00
CPC分类号： G06K15/02 , H04N1/32358 , G06K2215/0014 , G06K2215/0094 , H04N2201/3298
摘要： Disclosed is an image recording apparatus which records received printing data as n-tone image data under ordinary conditions but which is capable also of recording the data as m-tone (m
摘要翻译：公开了一种图像记录装置，其在普通条件下将接收到的打印数据记录为n色图像数据，但也能够将数据记录为m色（m

89. 发明授权

US09208720B2 Organic electroluminescence displaying apparatus which suppresses a defective display caused by a leak current at a time when an emission period controlling transistor is off 有权
标题翻译：有机电致发光显示装置，其抑制在发光周期控制用晶体管截止时由泄漏电流引起的不良显示
公开(公告)号：US09208720B2
公开(公告)日：2015-12-08
申请号：US13296533
申请日：2011-11-15
申请人： Junya Tamaki , Nobuhiko Sato , Masami Iseki , Kouji Ikeda , Masahiro Tamura , Takeshi Izumida , Naoki Tokuda
发明人： Junya Tamaki , Nobuhiko Sato , Masami Iseki , Kouji Ikeda , Masahiro Tamura , Takeshi Izumida , Naoki Tokuda
IPC分类号： G09G3/30 , G09G5/10 , G09G3/32 , G09G3/00
CPC分类号： G09G3/3233 , G09G3/006 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , G09G2320/0238 , G09G2320/0295 , G09G2330/08 , G09G2330/10
摘要： An organic EL displaying apparatus which suppresses a defective display caused by a leak current at a time when an emission period controlling transistor is off is provided. The organic EL displaying apparatus comprises a plurality of pixels each of which includes an organic EL element, a power supply line, a driving transistor and the emission period controlling transistor, a data line, and a control line. In this apparatus, in a certain one of the pixels, a resistance Roff—ILM between source and drain electrodes of the emission period controlling transistor in an off state of the emission period controlling transistor, and a resistance Rbk—Dr between source and drain electrodes of the driving transistor in a state that a minimum gradation displaying data voltage has been applied to a gate electrode of the driving transistor satisfy Roff—ILM≧Rbk—Dr.
摘要翻译：提供一种有机EL显示装置，其抑制在发光周期控制晶体管截止时由泄漏电流引起的不良显示。有机EL显示装置包括多个像素，每个像素包括有机EL元件，电源线，驱动晶体管和发光周期控制晶体管，数据线和控制线。在该装置中，在某一像素中，发光周期控制用晶体管处于截止状态的发光周期控制晶体管的源电极和漏电极之间的电阻Roff-ILM以及源极和漏极之间的电阻Rbk-Dr 在驱动晶体管的栅电极施加了最低等级显示数据电压的状态下的驱动晶体管满足Roff-ILM≥Rbk-Dr。

90. 发明申请

US20140072954A1 MONONUCLEAR CELL PREPARATION MATERIAL AND MONONUCLEAR CELL PREPARATION METHOD USING SAME 审中-公开
标题翻译：单核细胞制备材料和单核细胞制备方法
公开(公告)号：US20140072954A1
公开(公告)日：2014-03-13
申请号：US14110980
申请日：2012-04-02
申请人： Nobuyoshi Umeda , Nobuhiko Sato , Ayako Tsukamoto
发明人： Nobuyoshi Umeda , Nobuhiko Sato , Ayako Tsukamoto
IPC分类号： C12N5/0786
CPC分类号： C12N5/0645 , C12N5/0087 , G01N33/491
摘要： The present invention aims to provide a mononuclear cell preparation material capable of improving the mononuclear cell recovery while reducing granulocyte contamination, and a mononuclear cell preparation method which improves the mononuclear cell recovery. Provided is a mononuclear cell preparation material for removing granulocytes from blood to prepare mononuclear cells, which includes a nonwoven fabric made of a polyamide resin. Also provided is a method for preparing mononuclear cells using a device with the mononuclear cell preparation material packed in a container, the method including the steps of: (A) passing blood through the mononuclear cell preparation device from an inlet side to an outlet side of the device, thereby capturing granulocytes in the device; and (B) passing a washing solution through the mononuclear cell preparation device from the inlet side to the outlet side of the device, thereby recovering mononuclear cells remaining in the device.
摘要翻译：本发明旨在提供能够改善单核细胞恢复同时减少粒细胞污染的单核细胞制备材料，以及改善单核细胞恢复的单核细胞制备方法。提供一种用于从血液中除去粒细胞以制备单核细胞的单核细胞制备材料，其包括由聚酰胺树脂制成的无纺布。还提供了使用包装在容器中的单核细胞制备材料的装置制备单核细胞的方法，所述方法包括以下步骤：（A）将血液通过单核细胞制备装置从入口侧到出口侧从而在装置中捕获粒细胞; 和（B）将清洗液从装置的入口侧通过单核细胞制备装置，从而回收剩余在装置中的单核细胞。

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