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    • 86. 发明授权
    • Method for manufacturing flexible semiconductor device
    • 柔性半导体器件的制造方法
    • US08435842B2
    • 2013-05-07
    • US12681399
    • 2009-07-30
    • Koichi HiranoSeiichi NakataniTatsuo Ogawa
    • Koichi HiranoSeiichi NakataniTatsuo Ogawa
    • H01L21/00
    • H01L51/0541H01L51/0004H01L51/0022H01L51/0097H01L51/107Y02E10/549Y02P70/521
    • A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.
    • 一种制造柔性半导体器件的方法包括:(i)在树脂膜的上表面上形成绝缘膜,(ii)在树脂膜的上表面上形成提取电极的图案,(iii)形成半导体层 以使得半导体层与提取电极的图案接触的方式在绝缘膜上,以及(iv)在树脂膜的上表面上形成密封树脂层,使得密封树脂层覆盖 半导体层和提取电极的图案,其中通过印刷方法进行上述步骤(i)至(iv)中的步骤中的至少一个。 利用该制造方法,可以通过简单的印刷工艺形成各种层,而不使用真空工艺,光刻等。