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81. 发明授权

US5245452A Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes 失效
标题翻译：有源矩阵驱动液晶显示器件使用多晶硅像素电极
公开(公告)号：US5245452A
公开(公告)日：1993-09-14
申请号：US369476
申请日：1989-06-21
申请人： Akira Nakamura , Kohji Senda , Eiji Fujii , Fumiaki Emoto , Yasuhiro Uemoto , Atsuya Yamamoto , Kazunori Kobayashi
发明人： Akira Nakamura , Kohji Senda , Eiji Fujii , Fumiaki Emoto , Yasuhiro Uemoto , Atsuya Yamamoto , Kazunori Kobayashi
IPC分类号： G02F1/1337 , C08F220/54 , G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/1368 , C08F220/54 , G02F1/13439 , G02F2202/104
摘要： An image display device includes thin film transistors and pixel electrodes arranged in matrix form on a substrate. A semiconductor layer forming a channel region of the thin film transistor also serves as the pixel electrode, thereby making the structure of the device simple and facilitating fabrication thereof.

82. 发明授权

US4733950A Display device using electro-optic plate and a membrane switch 失效
标题翻译：显示装置采用电光板和薄膜开关
公开(公告)号：US4733950A
公开(公告)日：1988-03-29
申请号：US939438
申请日：1986-12-04
申请人： Yoneharu Takubo , Yasutaka Horibe , Nobue Yamanishi , Eiji Fujii , Hideyuki Okinaka
发明人： Yoneharu Takubo , Yasutaka Horibe , Nobue Yamanishi , Eiji Fujii , Hideyuki Okinaka
IPC分类号： G02F1/055
CPC分类号： G02F1/0555
摘要： A display apparatus using a light-transmitting ceramic plate having an electrooptic effect known as Kerr effect is disclosed. The ceramic plate is placed between two parallel polarizers having a same axis of polarization. A transparent flexible sheet faces a surface of the ceramic plate. The flexible sheet has a plurality of transparent striped electrodes on a surface facing the surface of the ceramic plate. The striped electrodes are locally brought into contact with the surface of the ceramic plate by a pressure applied by a pressure application head which is either always or intermittently pressed onto the flexible sheet. The pressure application head is movable in a direction parallel to the striped electrodes for scanning.
摘要翻译：公开了一种使用具有称为克尔效应的电光效应的透光陶瓷板的显示装置。将陶瓷板放置在具有相同的偏振轴的两个平行的偏振器之间。透明柔性片面对陶瓷板的表面。柔性片在与陶瓷板的表面相对的表面上具有多个透明条纹状电极。条状电极通过施加在压力施加头上的压力局部地与陶瓷板的表面接触，压力施加头总是或间歇地压在柔性片上。压力施加头可以在与条状电极平行的方向上移动以进行扫描。

83. 发明授权

US08304803B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08304803B2
公开(公告)日：2012-11-06
申请号：US13283985
申请日：2011-10-28
申请人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki Tanaka , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32
摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

84. 发明申请

US20120043524A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20120043524A1
公开(公告)日：2012-02-23
申请号：US13284294
申请日：2011-10-28
申请人： Hiroyuki TANAKA , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
发明人： Hiroyuki TANAKA , Nobuaki Nagao , Takahiro Hamada , Eiji Fujii
IPC分类号： H01L33/06
CPC分类号： H01L33/42 , H01L2933/0083 , H01L2933/0091
摘要： An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.
摘要翻译：发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极订购。 n侧电极与n型氮化物半导体层电连接。窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

85. 发明授权

US07312558B2 Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器和喷墨记录装置
公开(公告)号：US07312558B2
公开(公告)日：2007-12-25
申请号：US11097924
申请日：2005-04-01
申请人： Satoru Fujii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii
发明人： Satoru Fujii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii
IPC分类号： H01L41/187 , H01L41/04 , H01L41/16
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1645 , B41J2/1646 , G01C19/5607 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.
摘要翻译：在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16）并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成，的添加量为1摩尔％〜50摩尔％。形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

86. 发明授权

US07306965B2 Oxygen ion conductor device, method for fabricating oxygen ion conductor device, and oxygen concentration control system 有权
标题翻译：氧离子导体装置，氧离子导体装置的制造方法以及氧浓度控制系统
公开(公告)号：US07306965B2
公开(公告)日：2007-12-11
申请号：US11064999
申请日：2005-02-25
申请人： Hideo Torii , Eiji Fujii , Taku Hirasawa , Atsushi Tomozawa
发明人： Hideo Torii , Eiji Fujii , Taku Hirasawa , Atsushi Tomozawa
IPC分类号： H01L21/00
CPC分类号： C01B13/0251 , C25D1/003
摘要： A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.
摘要翻译：第一电极薄膜形成在氧离子传导性薄膜的上表面上以具有通孔。在位于通孔中的导电薄膜的上表面的一部分上形成电阻器。因此，可以通过电阻器直接加热氧离子传导性薄膜，能够以低功率快速地转移氧离子。因此，能够提高氧离子传导性薄膜的氧离子传导性。

87. 发明授权

US07288456B2 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US07288456B2
公开(公告)日：2007-10-30
申请号：US11169040
申请日：2005-06-29
申请人： Toyoji Ito , Eiji Fujii , Kazuo Umeda
发明人： Toyoji Ito , Eiji Fujii , Kazuo Umeda
IPC分类号： H01L21/336
CPC分类号： H01L27/11502 , H01L27/105 , H01L27/10852 , H01L27/10894 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/57 , H01L28/65
摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

88. 发明授权

US07193756B2 Piezoelectric element, method for fabricating the same, inkjet head, method for fabricating the same, and inkjet recording apparatus 有权
标题翻译：压电元件，其制造方法，喷墨头，其制造方法和喷墨记录装置
公开(公告)号：US07193756B2
公开(公告)日：2007-03-20
申请号：US10997143
申请日：2004-11-24
申请人： Akiko Murata , Eiji Fujii , Hideo Torii
发明人： Akiko Murata , Eiji Fujii , Hideo Torii
IPC分类号： G02B5/32 , B41J2/045
CPC分类号： B41J2/14233 , B41J2/14282 , B41J2202/03 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： A piezoelectric element includes a first electrode film; a piezoelectric layered film including a first piezoelectric thin film formed on the first electrode film and a second piezoelectric thin film formed on the first piezoelectric thin film; and a second electrode film formed on the second piezoelectric thin film. Each of the first and second piezoelectric thin films is an aggregate of columnar grains grown unidirectionally along the thickness direction of the piezoelectric layered film. The Pb content of the first piezoelectric thin film is smaller than the Pb content of the second piezoelectric thin film. A columnar grain of the second piezoelectric thin film has a larger average cross-sectional diameter than an average cross-sectional diameter of a columnar grain of the first piezoelectric thin film. A ratio of the thickness of the piezoelectric layered film to the average cross-sectional diameter of the second piezoelectric thin film is not less than 20 and not more than 60.
摘要翻译：压电元件包括第一电极膜; 压电层叠膜，包括形成在第一电极膜上的第一压电薄膜和形成在第一压电薄膜上的第二压电薄膜; 以及形成在第二压电薄膜上的第二电极膜。第一和第二压电薄膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状晶粒的集合体。第一压电薄膜的Pb含量小于第二压电薄膜的Pb含量。第二压电薄膜的柱状晶粒的平均截面直径大于第一压电薄膜的柱状晶粒的平均截面直径。压电层叠膜的厚度与第二压电薄膜的平均截面直径的比率不小于20并且不大于60。

89. 发明授权

US07185540B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07185540B2
公开(公告)日：2007-03-06
申请号：US11409469
申请日：2006-04-21
申请人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
发明人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
IPC分类号： G01P9/04 , H01L41/047 , H01L41/083
CPC分类号： G01P15/0922 , B41J2/14233 , B41J2/14282 , B41J2002/1425 , B41J2202/03 , G01C19/5607 , H01L41/0477 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/316 , H01L41/319
摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.
摘要翻译：在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2，在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

90. 发明申请

US20060187272A1 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
公开(公告)号：US20060187272A1
公开(公告)日：2006-08-24
申请号：US11409469
申请日：2006-04-21
申请人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
发明人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
IPC分类号： B41J2/045
CPC分类号： G01P15/0922 , B41J2/14233 , B41J2/14282 , B41J2002/1425 , B41J2202/03 , G01C19/5607 , H01L41/0477 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/316 , H01L41/319
摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.

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