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    • 81. 发明申请
    • Discretely controlled micromirror with multi-level positions
    • 具有多级位置的离散控制微镜
    • US20050280883A1
    • 2005-12-22
    • US10872241
    • 2004-06-18
    • Cheong SeoDong GimGyoung ChoTae Kim
    • Cheong SeoDong GimGyoung ChoTae Kim
    • G02B26/08G03H1/16
    • G02B26/0841
    • This invention provides the two types of Discretely Controlled Micromirror (DCM), which can overcome disadvantages of the conventional electrostatic micromirrors. The first type micromirror is a Variable Supporter Discretely Controlled Micromirror (VSDCM), which has a larger displacement range than the conventional electrostatic micromirror. The displacement accuracy of the VSDCM is better than that of the conventional electrostatic micromirror and the low driving voltage is compatible with IC components. The second type of DCM, the Segmented Electrode Discretely Controlled Micromirror (SEDCM) has same disadvantages with the conventional electrostatic micromirror. But the SEDCM is compatible with known microelectronics technologies.
    • 本发明提供两种类型的离散控制微镜(DCM),其可以克服传统静电微镜的缺点。 第一类微镜是可变支持离散控制微镜(VSDCM),其具有比常规静电微镜更大的位移范围。 VSDCM的位移精度优于常规静电微镜,位移精度低于IC组件。 第二类型的DCM,分段电极离散控制微镜(SEDCM)与传统的静电微镜具有相同的缺点。 但SEDCM与已知的微电子技术兼容。
    • 82. 发明申请
    • Array of micromirror array lenses
    • 阵列微镜阵列透镜
    • US20050275929A1
    • 2005-12-15
    • US10857714
    • 2004-05-28
    • Tae KimSang Baek
    • Tae KimSang Baek
    • G02B26/00G02B26/08G02B27/10
    • G02B26/0833
    • An array of micromirror array lenses is invented. The micromirror array lens consists of many micromirrors and actuating components. Each micromirror array lens is variable focal length lens with high speed focal length change. The lens can have arbitrary type and/or size as desired and desired arbitrary optical axis and can correct aberration by controlling each micromirror independently. Independent control of each micromirror is possible by known microelectronics technologies. The actuating components control the positions of micromirrors electrostatically and/or electromagnetically. The optical efficiency of the micromirror array lens is increased by locating a mechanical structure upholding micromirrors and the actuating components under micromirrors. The known microelectronics technologies remove the loss in effective reflective area due to electrode pads and wires.
    • 发明了一种微镜阵列透镜阵列。 微镜阵列透镜由许多微镜和致动部件组成。 每个微镜阵列透镜是具有高速焦距变化的可变焦距透镜。 透镜可以根据需要和期望的任意光轴具有任意类型和/或尺寸,并且可以通过独立地控制每个微镜来校正像差。 通过已知的微电子技术可以实现每个微镜的独立控制。 致动部件静电和/或电磁控制微镜的位置。 微镜阵列透镜的光学效率通过将保持微镜的机械结构和在微镜下的致动部件定位来增加。 已知的微电子技术消除了由于电极焊盘和电线导致的有效反射区域的损失。
    • 84. 发明申请
    • Soc-based core scan chain linkage switch
    • 基于Soc的核心扫描链联动开关
    • US20050149797A1
    • 2005-07-07
    • US10995099
    • 2004-11-24
    • Chang ParkKi JeonSung ParkKyeong YeomTae Kim
    • Chang ParkKi JeonSung ParkKyeong YeomTae Kim
    • G06F11/26G01R31/28G01R31/3185
    • G01R31/318558
    • Disclosed herein is an SoC-based core scan chain linkage switch. The core scan chain linkage switch includes test bus terminals, scan chain input/output terminals, a switch unit and SCLK, UCLK, Mode and Enable signals. The test bus terminals apply instructions and input/output test data. The scan chain input/output terminals link with the scan chains of an embedded core. The switch unit completes a linkage configuration between the test bus terminals and the scan chain input/output terminals in response to the applied instructions. The SCLK, UCLK and Mode signals apply the instructions to dynamically reconfigure the switch unit and update the linkage configuration of the switch unit, and the Enable signal activates and deactivates the switch unit.
    • 这里公开了一种基于SoC的核心扫描链接开关。 核心扫描链联动开关包括测试总线端子,扫描链输入/输出端子,开关单元和SCLK,UCLK,模式和使能信号。 测试总线终端应用指令和输入/输出测试数据。 扫描链输入/输出端子与嵌入式核心的扫描链连接。 开关单元响应于所施加的指令,在测试总线端子和扫描链输入/输出端子之间完成连接配置。 SCLK,UCLK和模式信号应用指令来动态地重新配置开关单元并更新开关单元的联动配置,使能信号激活和停用开关单元。
    • 85. 发明申请
    • WDM/SCM-PON and media access control method for asymmetric packet communication in the same
    • WDM / SCM-PON和媒体访问控制方法在非对称分组通信中相同
    • US20050129400A1
    • 2005-06-16
    • US10912340
    • 2004-08-04
    • Tae KimJeong YooByoung Kim
    • Tae KimJeong YooByoung Kim
    • H04L12/56H04J14/00H04J14/02H04Q11/00
    • H04J14/0282H04J14/0227H04J14/0241H04J14/0298H04Q11/0067H04Q2011/0016H04Q2011/0086
    • The present invention relates to a WDM/SCM-PON and a media access control method for asymmetric packet communication in the same. In the WDM/SCM-PON, each SCM channel is classified and used as a link by adopting an SCM technique of subdividing a wavelength band of up/downstream data links between an OLT and ONTs into frequency bands, and the ONTs are formed so that a certain SCM channel is independently distributed not fixedly assigned. Accordingly, an inventory problem, which can be generated in WDM/SCM, is prevented before happens, asymmetric dynamic band allocation is performed, and asymmetric service of up/downstream transmission is supported. As a result, a band required for next generation service is dynamically provided, optical interference effect is minimized, and Ethernet compatibility is provided so that Ethernet service suitable for providing IP service can be accommodated.
    • 本发明涉及一种WDM / SCM-PON及其中的非对称分组通信的媒体接入控制方法。 在WDM / SCM-PON中,通过采用将OLT和ONT之间的上下行数据链路的波段划分成频带的SCM技术将每个SCM信道分类并用作链路,并且形成ONT,使得 某个SCM信道是独立分配的,没有固定分配。 因此,在发生之前可以防止在WDM / SCM中产生的库存问题,执行非对称动态频带分配,支持上下行传输的非对称业务。 结果,动态地提供了下一代业务所需的频带,减少了光干扰效应,提供了以太网兼容性,从而可以适应提供IP业务的以太网业务。
    • 87. 发明申请
    • Method of forming metal line in semiconductor device
    • 在半导体器件中形成金属线的方法
    • US20050101121A1
    • 2005-05-12
    • US10878811
    • 2004-06-28
    • Tae Kim
    • Tae Kim
    • H01L21/3065H01L21/28H01L21/306H01L21/308H01L21/3205H01L21/44H01L21/4763H01L21/768H01L23/48H01L23/52H01L29/40
    • H01L21/76885H01L21/76892
    • The present invention discloses a method for forming a metal line in a semiconductor device including the steps of: sequentially forming a first insulation film, an etch barrier film and a second insulation film on a semiconductor substrate on which the substructure has been formed; forming a plurality of via holes for exposing the substructure in different points by patterning the second insulation film, the etch barrier film and the first insulation film of the resulting structure, and forming a plurality of trench patterns respectively on the plurality of via holes by re-patterning the second insulation film and the etch barrier film of the resulting structure; forming a plurality of vias and trenches by filling a metal material in the plurality of via holes and trench patterns; removing the second insulation film; and forming a third insulation film over the resulting structure including the removed second insulation film.
    • 本发明公开了一种在半导体器件中形成金属线的方法,包括以下步骤:在已经形成子结构的半导体衬底上依次形成第一绝缘膜,蚀刻阻挡膜和第二绝缘膜; 形成多个通孔,用于通过对所得结构的第二绝缘膜,蚀刻阻挡膜和第一绝缘膜进行图案化而在不同点暴露底层结构,并且通过再分别在多个通孔上形成多个沟槽图案 对所得结构的第二绝缘膜和蚀刻阻挡膜进行图案化; 通过填充多个通孔和沟槽图案中的金属材料形成多个通孔和沟槽; 去除第二绝缘膜; 以及在包括所移除的第二绝缘膜的所得结构上形成第三绝缘膜。
    • 88. 发明申请
    • Shared LAN emulation method and apparatus having VLAN recognition and LLID management functions on EPON
    • 在EPON上具有VLAN识别和LLID管理功能的共享LAN仿真方法和设备
    • US20050083950A1
    • 2005-04-21
    • US10868479
    • 2004-06-14
    • Su ChoiTae KimHyeong Lee
    • Su ChoiTae KimHyeong Lee
    • H04L12/28H04L1/00H04Q11/00
    • H04Q11/0067H04Q11/0066H04Q11/0071H04Q2011/0077
    • Disclosed herein is a shared Local Area Network (LAN) emulation method and apparatus. The method includes the following four steps. At the first step, a Logical Link Identifier (LLID) management table is set up to assign unique LLIDs to a plurality of Optical Network Units (ONUs) and manage the assigned LLIDs so as to identify the plurality of ONUs connected to a single Optical Line Terminal (OLT). Thereafter, a MAC address table is set up for the LLIDs to learn MAC addresses of the ONUs. Thereafter, the unique LLIDs are assigned to ONUs when the ONUs request registration from the OLT. Finally, data frames, which are received by a Shared LAN Emulation (SLE) layer of the OLT, are bridged using the LLIDs, VIDs of Virtual LANs to which the ONUs belong and destination MAC addresses of the data frames so as to provide a single matched port between a Logical Link Control (LLC) layer and a MAC layer of the OLT.
    • 这里公开了共享的局域网(LAN)仿真方法和装置。 该方法包括以下四个步骤。 在第一步,建立逻辑链路标识符(LLID)管理表以将多个光网络单元(ONU)分配唯一的LLID并管理所分配的LLID,以便识别连接到单个光线路的多个ONU 终端(OLT)。 此后,为LLID建立MAC地址表,以学习ONU的MAC地址。 此后,当ONU从OLT请求注册时,将唯一的LLID分配给ONU。 最后,由OLT的共享LAN仿真(SLE)层接收的数据帧使用LLID,ONU所属的虚拟LAN的VID和数据帧的目标MAC地址进行桥接,以提供单个 逻辑链路控制(LLC)层和OLT的MAC层之间的匹配端口。
    • 89. 发明授权
    • Low voltage sensing scheme having reduced active power down standby current
    • 低电压感测方案具有降低的有功功率的待机电流
    • US08644091B2
    • 2014-02-04
    • US13595857
    • 2012-08-27
    • Tae Kim
    • Tae Kim
    • G11C7/10
    • G11C7/08G11C5/148G11C7/06G11C7/062G11C7/065G11C7/1006G11C7/12G11C7/22G11C11/4091G11C2207/065G11C2207/2227
    • A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
    • 低电压感测方案减少了存储器件中的有功功率下的待机漏电流。 在Psense放大器控制线(例如ACT)和Vcc之间和/或在Nsense放大器控制线(例如RNL *)和Vss(地电位)之间使用钳位装置或二极管。 钳位二极管在正常存储器操作期间不使能,但在有功掉电模式下导通,以减少通过ACT和/或RNL *节点的泄漏电流。 连接到ACT节点的钳位装置可以在掉电模式下降低ACT线路上的电压,而连接到RNL *节点的钳位装置可能会在掉电模式下增加RNL *线路上的电压,以降低读出放大器的漏电流 通过这些节点。 由于管理摘要的规则,本摘要不应用于解释索赔。