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81. 发明申请

US20070000428A1 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US20070000428A1
公开(公告)日：2007-01-04
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B15/14
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

82. 发明授权

US07142203B2 Semiconductor display device and method of driving a semiconductor display device 有权
公开(公告)号：US07142203B2
公开(公告)日：2006-11-28
申请号：US09905542
申请日：2001-07-13
申请人： Masaaki Hiroki , Eiji Sato , Shigeru Onoya , Noboru Inoue
发明人： Masaaki Hiroki , Eiji Sato , Shigeru Onoya , Noboru Inoue
IPC分类号： G00G5/00
CPC分类号： G09G3/3614 , G09G3/20 , G09G5/399 , G09G2320/0247
摘要： A semiconductor display device capable of performing clear display of a high definition image, in which flicker, vertical stripes, horizontal stripes, and diagonal stripes are unlikely to be seen by an observer, is provided. An image signal input from the outside to a RAM of a frame conversion portion in a semiconductor display device is written in, and the written in image signal is read out two times, in order. A period for reading out the image signal input to the RAM one time is shorter than a period for writing in the image signal to the RAM. The electric potentials of display signals input to each pixel in two consecutive frame periods are inverted, with the electric potential of opposing electrodes (opposing electric potential) as a reference, whereby the same image is displayed in a pixel portion in the two consecutive frame periods.

83. 发明申请

US20060243989A1 Light emitting device, method of preparing the same and device for fabricating the same 有权
标题翻译：发光装置及其制备方法及其制造装置
公开(公告)号：US20060243989A1
公开(公告)日：2006-11-02
申请号：US11476508
申请日：2006-06-28
申请人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
IPC分类号： H01L33/00
CPC分类号： H01L27/3211 , H01L27/32 , H01L27/322 , H01L27/3246 , H01L27/3258 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5281
摘要： A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.
摘要翻译：提供了具有高清晰度，高开口率和高可靠性的发光器件。本发明利用红色，绿色和蓝色的发光颜色实现全色平板显示器的高清晰度和高开口率，而不依赖于成膜方法和通过形成层叠部分的有机化合物层的沉积精度 21,22通过有意和部分地重叠相邻发光元件的不同有机化合物层。此外，形成含有氢的保护膜32a，并且有机化合物层中的缺点用氢终止，从而实现亮度的提高和可靠性。

84. 发明授权

US07115434B2 Method for precisely forming light emitting layers in a semiconductor device 有权
标题翻译：在半导体器件中精确地形成发光层的方法
公开(公告)号：US07115434B2
公开(公告)日：2006-10-03
申请号：US10420383
申请日：2003-04-22
申请人： Shunpei Yamazaki , Kunitaka Yamamoto , Masaaki Hiroki , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Kunitaka Yamamoto , Masaaki Hiroki , Takeshi Fukunaga
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L51/0005 , H01L27/3211 , H01L27/3244 , H01L27/3295 , H01L51/0004 , H01L51/0035 , H01L51/0038 , H01L51/0042 , H01L51/56
摘要： There is provided a method for precisely forming light emitting layers in a semiconductor device without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of signal lines by banks, and a coating liquid (R), a coating liquid (G), and a coating liquid (B) are applied respectively in a stripe shape at the same time using a dispenser. Then, luminescent layers emitting lights of respective colors of red, green and blue can be formed by heating these coating liquids.
摘要翻译：提供了一种用于在半导体器件中精确地形成发光层的方法，而不会出现位置偏差和高通量。像素部分通过堤分为多条信号线，并且使用分配器同时分别施加涂布液（R），涂布液（G）和涂布液（B），条纹状。然后，可以通过加热这些涂布液来形成发出红色，绿色和蓝色各种颜色的光的发光层。

85. 发明授权

US07098069B2 Light emitting device, method of preparing the same and device for fabricating the same 有权
公开(公告)号：US07098069B2
公开(公告)日：2006-08-29
申请号：US10349750
申请日：2003-01-22
申请人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
IPC分类号： H01L51/40
CPC分类号： H01L27/3211 , H01L27/32 , H01L27/322 , H01L27/3246 , H01L27/3258 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5281
摘要： A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

86. 发明授权

US07050878B2 Semiconductror fabricating apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US07050878B2
公开(公告)日：2006-05-23
申请号：US10300927
申请日：2002-11-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： G06F19/00
CPC分类号： H01L21/02678 , B23K26/04 , B23K26/0604 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/1224 , B23K26/123 , B23K26/127 , H01L21/02683 , H01L21/2026
摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).
摘要翻译：提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

87. 发明申请

US20050277028A1 Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体装置的制造方法，半导体装置，使用该激光装置的半导体装置的制造系统以及电子设备
公开(公告)号：US20050277028A1
公开(公告)日：2005-12-15
申请号：US11185737
申请日：2005-07-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： H01L21/20 , B23K26/06 , B23K26/08 , G02F1/1368 , G03F1/00 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01S3/00 , H01S5/06
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/082 , B23K2101/007 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。此外，使光束点撞击要扫描的部分。结果，半导体膜部分结晶。也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分被结晶。利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

88. 发明申请

US20050218926A1 Measuring method, inspection method, inspection device, semiconductor device, method of manufacturing a semiconductor device, and method of manufacturing an element substrate 有权
标题翻译：测量方法，检查方法，检查装置，半导体器件，半导体器件的制造方法以及元件基板的制造方法
公开(公告)号：US20050218926A1
公开(公告)日：2005-10-06
申请号：US11093803
申请日：2005-03-30
申请人： Masaaki Hiroki
发明人： Masaaki Hiroki
IPC分类号： G01R1/06 , G01R31/01 , G01R31/02 , G01R31/265 , G01R31/302 , G02F1/13 , G02F1/1368 , H01L21/66 , G01R31/00
CPC分类号： G01R19/0084 , G01R1/07 , G01R31/01
摘要： An inspection method which simplifies an inspection step by eliminating the need to set probes on wiring or probe terminals, and an inspection device for performing the inspection step. A voltage is applied to each of inspected circuits or circuit elements to operate the same. Signal processing is performed on an output from each inspected circuit or circuit element during operation to form a signal (operation information signal) including information on the operating condition of the circuit or the circuit element. The operation information signal is amplified and the amplitude of an alternating current voltage separately input is modulated with the amplified operation information signal. The voltage of the modulated alternating current is read in a non-contact manner to determine whether the corresponding circuit or circuit element is non-defective or defective.
摘要翻译：一种检查方法，其通过不需要在布线或探针端子上设置探针来简化检查步骤，以及用于执行检查步骤的检查装置。对每个检测电路或电路元件施加电压以进行操作。在操作期间对来自每个检查电路或电路元件的输出执行信号处理，以形成包括关于电路或电路元件的操作条件的信息的信号（操作信息信号）。操作信息信号被放大，并且用放大的操作信息信号调制单独输入的交流电压的幅度。以非接触的方式读取调制交流电压，以确定相应的电路或电路元件是否是有缺陷的或有缺陷的。

89. 发明申请

US20050035095A1 Laser annealing apparatus and semiconductor device manufacturing method 有权
标题翻译：激光退火装置及半导体装置的制造方法
公开(公告)号：US20050035095A1
公开(公告)日：2005-02-17
申请号：US10944000
申请日：2004-09-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
IPC分类号： H01L21/268 , B23K26/08 , C21D1/34 , H01L21/20 , H01L21/314 , B23K26/00
CPC分类号： H01L21/02691 , B23K26/0838 , C21D1/34 , H01L21/02686 , H01L21/2026
摘要： This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.
摘要翻译：本发明旨在提供一种激光退火方法，其采用运行成本较低的激光退火机，以处理大尺寸基板，以防止或减少同心图案的产生，并提供一种半导体器件制造方法，包括使用激光退火方法。当以20-200cm / s之间的恒定速率移动衬底时，激光束被倾斜地辐射到半导体衬底的表面上的半导体膜。因此，能够将均匀的激光束照射到大尺寸基板上的半导体膜上，从而制造防止或减少同心图案的产生的半导体器件。通过将多个激光束聚光成一个通量，可以防止或减少同心图案的产生，从而提高半导体器件的可靠性。

90. 发明授权

US06847006B2 Laser annealing apparatus and semiconductor device manufacturing method 有权
公开(公告)号：US06847006B2
公开(公告)日：2005-01-25
申请号：US10212773
申请日：2002-08-07
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki
IPC分类号： H01L21/268 , B23K26/08 , C21D1/34 , H01L21/20 , H01L21/314 , B66C21/00
CPC分类号： H01L21/02691 , B23K26/0838 , C21D1/34 , H01L21/02686 , H01L21/2026
摘要： This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device.

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