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81. 发明申请

US20120313076A1 LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES 有权
标题翻译：氮化镓半导体基板上的低驱动发光二极管结构
公开(公告)号：US20120313076A1
公开(公告)日：2012-12-13
申请号：US13493430
申请日：2012-06-11
申请人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
发明人： Shuji Nakamura , Steven P. DenBaars , Shinichi Tanaka , Daniel F. Feezell , Yuji Zhao , Chih-Chien Pan
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
摘要翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL）地区。本发明还包括制造这种装置的方法。

82. 发明申请

US20120192171A1 Information Processing Apparatus and File System 审中-公开
标题翻译：信息处理装置和文件系统
公开(公告)号：US20120192171A1
公开(公告)日：2012-07-26
申请号：US13347980
申请日：2012-01-11
申请人： Shinichi Tanaka , Masaharu Sakai
发明人： Shinichi Tanaka , Masaharu Sakai
IPC分类号： G06F9/44
CPC分类号： G06F9/4401 , A63F13/77 , G06F8/66
摘要： In an information processing apparatus, a file system manages files in a storage unit. Upon receipt of a boot instruction, a process boot unit starts an application. Once the application is started, a path acquisition unit acquires the path to an application file and the path to a patch file in the storage unit. When there is contents with the same name in both the application file and the patch file, a path switching unit switches the path directed to the contents of the application file to the path directed to the contents of the patch file.
摘要翻译：在信息处理装置中，文件系统管理存储单元中的文件。在接收到引导指令时，处理引导单元启动应用程序。一旦应用程序启动，路径获取单元获得应用文件的路径和存储单元中的补丁文件的路径。当在应用文件和补丁文件中存在具有相同名称的内容时，路径切换单元将指向应用文件的内容的路径切换到指向补丁文件内容的路径。

83. 发明申请

US20120190445A1 Information Processing Apparatus 审中-公开
标题翻译：信息处理装置
公开(公告)号：US20120190445A1
公开(公告)日：2012-07-26
申请号：US13350911
申请日：2012-01-16
申请人： Shinichi Tanaka , Shigeru Enomoto
发明人： Shinichi Tanaka , Shigeru Enomoto
IPC分类号： A63F13/00
CPC分类号： A63F13/30 , A63F13/00 , A63F13/45 , A63F2300/206 , A63F2300/207 , A63F2300/40
摘要： At least application programs and display files used to generate display images associated with the applications are recorded in a cartridge-type game recording medium. A storage is a built-in type recording medium. When the game recording medium is loaded in a drive, an installer processing unit acquires the display files from the game recording medium and installs the acquired display files in the storage. A board image generating unit generates a board image using the display file installed.
摘要翻译：至少应用程序和用于产生与应用相关联的显示图像的显示文件被记录在盒型游戏记录介质中。存储器是内置型记录介质。当游戏记录介质被装载在驱动器中时，安装者处理单元从游戏记录介质获取显示文件，并将获取的显示文件安装在存储器中。板图像生成单元使用安装的显示文件生成板图像。

84. 发明授权

US08211781B2 Semiconductor manufacturing method 有权
标题翻译：半导体制造方法
公开(公告)号：US08211781B2
公开(公告)日：2012-07-03
申请号：US12615277
申请日：2009-11-10
申请人： Tatsuma Saito , Shinichi Tanaka , Yusuke Yokobayashi
发明人： Tatsuma Saito , Shinichi Tanaka , Yusuke Yokobayashi
IPC分类号： H01L21/461
CPC分类号： H01L33/0095 , B23K26/0604 , B23K26/364 , B23K26/40 , B23K2103/172 , Y10S438/977
摘要： A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed.
摘要翻译：提供了具有金属支撑件的半导体器件的制造方法。一方面的方法包括在生长衬底上生长半导体膜; 在与所述生长基板相对的所述半导体膜的表面上形成金属载体; 然后从所述半导体膜去除所述生长衬底; 在所述半导体膜中形成到达所述金属支撑件的街道槽; 将第一激光束辐射到所述金属支撑件上以形成在所述金属支撑件中具有基本平坦的底部的第一分隔槽; 并且将第二激光束辐射到所述金属支撑件上以形成第二分隔槽，该第二分隔槽穿过保留在形成第一分隔槽的部分所述金属支撑件。

85. 发明授权

US08145107B2 Image forming apparatus and image forming method 失效
标题翻译：图像形成装置及图像形成方法
公开(公告)号：US08145107B2
公开(公告)日：2012-03-27
申请号：US12726178
申请日：2010-03-17
申请人： Shinichi Tanaka , Satoshi Chiba , Koichi Kamijo
发明人： Shinichi Tanaka , Satoshi Chiba , Koichi Kamijo
IPC分类号： G03G15/01 , G03G15/20
CPC分类号： G03G15/167 , G03G2215/0132
摘要： An image forming apparatus includes: a transfer belt to which an image is transferred; a belt tension roller around which the transfer belt is looped; a transfer roller that includes a shaft and a recessed portion which is formed in an axial direction of the transfer roller and has a first edge formed in an opening edge in one side of a rotation direction of the transfer roller and a second edge formed in an opening edge in the other side opposite to the one side; and a support member that is arranged in the shaft of the transfer roller.
摘要翻译：一种图像形成装置包括：图像被转印到的转印带; 皮带张紧辊，传送带绕其周围环绕; 转印辊，其包括轴和沿转印辊的轴向形成的凹部，并且具有形成在转印辊的旋转方向的一侧中的开口边缘中的第一边缘和形成在转印辊的旋转方向上的第二边缘在一侧相反的另一侧的开口边缘; 以及设置在转印辊的轴中的支撑构件。

86. 发明授权

US08081920B2 Transfer material separating device, transfer device and image forming apparatus 失效
标题翻译：转印材料分离装置，转印装置和成像装置
公开(公告)号：US08081920B2
公开(公告)日：2011-12-20
申请号：US12359919
申请日：2009-01-26
申请人： Shinichi Tanaka
发明人： Shinichi Tanaka
IPC分类号： G03G15/00
CPC分类号： G03G15/657 , G03G2215/00413 , G03G2215/00573
摘要： A transfer material separating device includes a transfer material moving member (intermediate transfer belt) adapted to move with a transfer material held in contact with and pressed against it so as to have a liquid developer image transferred onto the transfer material and a transfer material separation/suction section (a suction wheel, a suction wheel support lever, a cam and a spring) for sucking the transfer material moving with the transfer material moving member at the surface opposite to the image transfer surface thereof and separating the transfer material from the transfer material moving member.
摘要翻译：转印材料分离装置包括转印材料移动部件（中间转印带），该转印材料移动部件（中间转印带）适于与保持接触并压靠的转印材料一起移动，以使液体显影剂图像转印到转印材料上，并且转印材料分离/ 吸引部（吸引轮，吸引轮支撑杆，凸轮和弹簧），用于吸收与转印材料移动部件在与其图像转印面相反的表面移动的转印材料，并将转印材料与转印材料分离移动成员。

87. 发明申请

US20100209723A1 CROSSLINKING AGENT, CROSSLINKED POLYMER, AND USES THEREOF 有权
标题翻译：交联剂，交联聚合物及其用途
公开(公告)号：US20100209723A1
公开(公告)日：2010-08-19
申请号：US12675567
申请日：2008-08-29
申请人： Shinichi Tanaka , Hideki Kageyama , Hiroyuki Ono , Akiko Kuruma
发明人： Shinichi Tanaka , Hideki Kageyama , Hiroyuki Ono , Akiko Kuruma
IPC分类号： C07C69/66 , C08G63/91 , B32B27/36 , C08L29/04
CPC分类号： C09J129/04 , B41M5/3372 , B41M5/3375 , B41M5/44 , B41M2205/04 , B41M2205/40 , C08K5/098 , C08K5/10 , C08K5/101 , C08L29/04 , G02B5/30 , Y10T428/31786 , C08L61/06
摘要： There is provided a novel crosslinking agent for use in crosslinked polymer fabrication, specifically a crosslinking agent containing at least one compound selected from glyoxylate and a glyoxylic acid ester derivative represented by the following general formula (1): wherein R1 and R2 each independently represents an alkyl group having 1 to 10 carbon atoms and R3 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
摘要翻译：提供了用于交联聚合物制造的新型交联剂，特别是含有至少一种选自乙醛酸盐和由以下通式（1）表示的乙醛酸酯衍生物的化合物的交联剂：其中R1和R2各自独立地表示具有1至10个碳原子的烷基，R 3表示氢原子或具有1至10个碳原子的烷基。

88. 发明申请

US20090289559A1 LED DEVICE AND LED DRIVER 有权
标题翻译： LED设备和LED驱动器
公开(公告)号：US20090289559A1
公开(公告)日：2009-11-26
申请号：US12469206
申请日：2009-05-20
申请人： Shinichi Tanaka , Kiyoshi Narisawa
发明人： Shinichi Tanaka , Kiyoshi Narisawa
IPC分类号： H05B37/02
CPC分类号： H05B33/0827 , H05B33/0815
摘要： A LED device having a LED array, LED driver ICs, DC-DC converter, a first feedback circuit consisting of voltage dividing resistors, and a headroom voltage monitoring circuit having controller and second feedback circuit. In second feedback circuit, headroom voltages obtained at output current terminals of the LED driver ICs, are fed back to DC-DC converter.
摘要翻译：具有LED阵列的LED器件，LED驱动器IC，DC-DC转换器，由分压电阻组成的第一反馈电路和具有控制器和第二反馈电路的裕量监控电路。在第二反馈电路中，在LED驱动器IC的输出电流端子处获得的余量电压被反馈到DC-DC转换器。

89. 发明授权

US07595423B2 Process for producing trans-1,4-cyclohexanedicarboxylic acid 有权
标题翻译：反式-1,4-环己烷二羧酸的制备方法
公开(公告)号：US07595423B2
公开(公告)日：2009-09-29
申请号：US11924161
申请日：2007-10-25
申请人： Koetsu Endou , Hirofumi Nakamura , Shinichi Tanaka
发明人： Koetsu Endou , Hirofumi Nakamura , Shinichi Tanaka
IPC分类号： C07C61/00
CPC分类号： C07C51/353 , C07C51/363 , C07C2601/14 , C07C61/09
摘要： A subject for the invention is to obtain trans-1,4-cyclohexanedicarboxylic acid (t-CHDA) in a high concentration by efficiently isomerizing cis-1,4-cyclohexanedicarboxylic acid (c-CHDA) by a simple method. The invention provides: (1) a process for producing t-CHDA which comprises heating crude CHDA to 180° C. or higher in an inert atmosphere and causing the t-CHDA formed by isomerization to precipitate in the molten c-CHDA while holding the crude CHDA at a temperature in the range of not lower than 180° C. and less than the melting point of t-CHDA; (2) a process for producing t-CHDA, wherein crude CHDA which is powdery or granular is heat-treated at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA to thereby isomerize the cis isomer to the trans isomer while maintaining the powdery or granular state; (3) a process for producing t-CHDA, wherein crude CHDA is held at a temperature of not lower than the melting point of c-CHDA and lower than the melting point of t-CHDA in an inert atmosphere while maintaining flowing to thereby obtain powdery or granular t-CHDA; and (4) a process for purifying crude CHDA in which crude CHDA obtained through the step of hydrogenating TPA or the like is heated in an atmosphere of an inert gas to volatilize and remove impurities.
摘要翻译：本发明的目的是通过简单的方法有效地使顺式-1,4-环己烷二羧酸（c-CHDA）异构化，以高浓度获得反式-1,4-环己烷二羧酸（t-CHDA）。本发明提供：（1）一种生产t-CHDA的方法，其包括在惰性气氛中将粗CHDA加热至180℃或更高，并使通过异构化形成的t-CHDA在熔融的c-CHDA中沉淀，同时保持原料CHDA在不低于180℃且小于t-CHDA的熔点的温度范围内; （2）生产t-CHDA的方法，其中将粉末状或粒状的粗CHDA在不低于c-CHDA的熔点并低于t-CHDA的熔点的温度下进行热处理，从而异构化顺式异构体反式异构体，同时保持粉状或颗粒状态; （3）生产t-CHDA的方法，其中将粗CHDA保持在不低于c-CHDA的熔点并低于在惰性气氛中的t-CHDA的熔点的温度，同时保持流动，从而获得粉状或颗粒状t-CHDA; （4）一种纯化粗制CHDA的方法，其中通过氢化TPA等步骤得到的粗CHDA在惰性气体气氛中加热，挥发除去杂质。

90. 发明申请

US20090239324A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SEPARABLE SUPPORT BODY 有权
标题翻译：使用可分离支撑体制造半导体器件的方法
公开(公告)号：US20090239324A1
公开(公告)日：2009-09-24
申请号：US12407290
申请日：2009-03-19
申请人： Takako Chinone , Shinichi Tanaka , Sho Iwayama , Yusuke Yokobayashi , Satoshi Tanaka
发明人： Takako Chinone , Shinichi Tanaka , Sho Iwayama , Yusuke Yokobayashi , Satoshi Tanaka
IPC分类号： H01L21/304 , H01L21/3205
CPC分类号： H01L21/2007 , H01L33/0079
摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.
摘要翻译：在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。然后，在第二导电型半导体层上形成电极层。然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。最后，去除生长衬底的至少一部分。在这种情况下，粘合剂层可从电极层移除。

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