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81. 发明授权

US09293545B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09293545B2
公开(公告)日：2016-03-22
申请号：US14451680
申请日：2014-08-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kengo Akimoto , Daisuke Kawae
IPC分类号： H01L29/786 , H01L29/417 , H01L51/05 , H01L29/49 , H01L51/10 , H01L27/12 , H01L21/28 , H01L21/02
CPC分类号： H01L29/41733 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/1288 , H01L29/4908 , H01L29/786 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L51/0508 , H01L51/0512 , H01L51/0545 , H01L51/105
摘要： A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.
摘要翻译：下栅极薄膜晶体管中的源电极和漏电极之间可能发生的电场浓度被放宽并且抑制了开关特性的劣化的结构及其制造方法。制造在源电极和漏电极上设置氧化物半导体层的底栅薄膜晶体管，与氧化物半导体层接触的源电极的侧表面的角度和角度;角度和角度; 与氧化物半导体层接触的漏电极的侧面的两个面积分别被设定为大于或等于20°且小于90°，使得从上边缘到下边缘的距离每个电极的侧表面增加。

82. 发明授权

US09252288B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09252288B2
公开(公告)日：2016-02-02
申请号：US14140044
申请日：2013-12-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
IPC分类号： H01L29/786 , H01L29/04 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/28079 , H01L21/28158 , H01L29/04 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
摘要翻译：本发明的目的是提供一种适用于半导体器件的氧化物半导体。或者，另一目的是提供一种使用氧化物半导体的半导体器件。提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

83. 发明授权

US09196713B2 Method of manufacturing semiconductor device having oxide semiconductor layer 有权
标题翻译：制造具有氧化物半导体层的半导体器件的方法
公开(公告)号：US09196713B2
公开(公告)日：2015-11-24
申请号：US14471632
申请日：2014-08-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kengo Akimoto
IPC分类号： H01L21/02 , H01L29/66 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78696 , H01L21/02318 , H01L21/02323 , H01L21/0234 , H01L21/02565 , H01L29/247 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.
摘要翻译：本发明的目的是提供一种薄膜晶体管的有利的界面特性，该薄膜晶体管包括氧化物半导体层，而不混入杂质如水分。另一个目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件，以及可以以高生产率制造半导体器件的方法。要点是在栅极绝缘层的表面进行氧自由基处理。因此，在栅极绝缘层与半导体层之间的界面处存在氧浓度的峰值，并且栅极绝缘层的氧浓度具有浓度梯度。氧浓度朝向栅极绝缘层和半导体层之间的界面增加。

84. 发明授权

US09196690B2 Oxide semiconductor film and semiconductor device 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US09196690B2
公开(公告)日：2015-11-24
申请号：US14483662
申请日：2014-09-11
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tatsuya Honda , Hiroshi Kanemura , Kengo Akimoto , Suzunosuke Hiraishi
IPC分类号： H01L29/38 , H01L29/786 , H01L27/15 , H01L27/32 , H01L29/04 , H01L29/24 , H01L29/66
CPC分类号： H01L29/247 , H01L29/04 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.
摘要翻译：提供了具有更稳定的电特性并且基本上由氧化铟锌组成的氧化物半导体膜。此外，提供了通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。基本上由氧化铟锌组成的氧化物半导体膜具有六边形晶体结构，其中ab平面基本上平行于氧化物半导体膜的表面，并且其中ab平面基本上平行于氧化物表面的菱方晶体结构半导体膜。

85. 发明授权

US09130067B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09130067B2
公开(公告)日：2015-09-08
申请号：US13780138
申请日：2013-02-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L29/72 , H01L33/00 , H01L27/02 , H01L27/12
CPC分类号： G02F1/136204 , H01L27/0248 , H01L27/1225 , H01L27/124 , H01L33/0041 , H01L2924/0002 , H01L2924/00
摘要： In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
摘要翻译：为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

86. 发明授权

US09112038B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09112038B2
公开(公告)日：2015-08-18
申请号：US14282305
申请日：2014-05-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L29/24 , H01L27/12 , H01L29/45
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

87. 发明授权

US08946703B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US08946703B2
公开(公告)日：2015-02-03
申请号：US14260598
申请日：2014-04-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hidekazu Miyairi , Kengo Akimoto , Yasuo Nakamura
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66 , H01L29/26 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02323 , H01L21/02565 , H01L21/32139 , H01L21/465 , H01L21/467 , H01L21/4763 , H01L21/47635 , H01L27/1225 , H01L29/0692 , H01L29/1033 , H01L29/24 , H01L29/263 , H01L29/42364 , H01L29/42384 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78633 , H01L29/7869 , H01L29/78693
摘要： To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

88. 发明授权

US08900917B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08900917B2
公开(公告)日：2014-12-02
申请号：US13888492
申请日：2013-05-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L29/02 , H01L29/786 , H01L29/66
CPC分类号： H01L29/66742 , H01L29/78621 , H01L29/7869
摘要： An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
摘要翻译：一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间层。有意地提供具有比半导体层更高的载流子浓度的金属氧化物层作为源极和漏极电极层与半导体层之间的缓冲层，从而形成欧姆接触。

89. 发明授权

US08879011B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08879011B2
公开(公告)日：2014-11-04
申请号：US14196236
申请日：2014-03-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Masayuki Sakakura , Yoshiaki Oikawa
IPC分类号： G02F1/136 , H01L29/66
CPC分类号： H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译：本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

90. 发明授权

US11430899B2 Display device and electronic device 有权
公开(公告)号：US11430899B2
公开(公告)日：2022-08-30
申请号：US17373879
申请日：2021-07-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： H01L29/786 , G09G3/36 , H01L27/12
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

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