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81. 发明授权

US06692546B2 Chemical mechanical polishing compositions for metal and associated materials and method of using same 有权
标题翻译：金属及相关材料的化学机械抛光组合物及其使用方法
公开(公告)号：US06692546B2
公开(公告)日：2004-02-17
申请号：US09932415
申请日：2001-08-17
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： C09G102
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
摘要翻译：一种化学机械抛光浆料组合物和使用该浆料组合物抛光铜，阻挡材料和电介质材料的方法，其包括第一和第二步浆料。第一步浆料对铜的去除率高，阻隔材料的去除率低。第二步浆料对阻隔材料的去除率高，铜和介电材料的去除率低。第一浆液至少包含有机聚合物研磨剂。

82. 发明授权

US06623656B2 Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same 失效
公开(公告)号：US06623656B2
公开(公告)日：2003-09-23
申请号：US09793023
申请日：2001-02-26
申请人： Thomas H. Baum , Chongying Xu , Witold Paw , Bryan C. Hendrix , Jeffrey F. Roeder , Ziyun Wang
发明人： Thomas H. Baum , Chongying Xu , Witold Paw , Bryan C. Hendrix , Jeffrey F. Roeder , Ziyun Wang
IPC分类号： C23C1640
CPC分类号： C09D1/00 , C07F7/003 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/409
摘要： Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

83. 发明授权

US06417369B1 Pyrazolate copper complexes, and MOCVD of copper using same 失效
标题翻译：吡唑铜络合物和铜的MOCVD使用相同
公开(公告)号：US06417369B1
公开(公告)日：2002-07-09
申请号：US09524063
申请日：2000-03-13
申请人： Chongying Xu , Thomas H. Baum , Ziyun Wang
发明人： Chongying Xu , Thomas H. Baum , Ziyun Wang
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.
摘要翻译：用于在半导体集成电路中形成铜的吡唑类前体组合物，例如半导体器件结构中的互连金属化，作为用于电镀的粘合种子层，用于沉积薄膜记录头并用于封装部件的电路化。吡唑铜前体组合物包括氟化和非氟化的吡唑盐铜（I）络合物及其路易斯碱加合物。这种前体有利地用于在基底上的铜或含铜材料的液体输送化学气相沉积。

84. 发明授权

US06399208B1 Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films 失效
标题翻译：用于化学气相沉积形成的源试剂组合物和方法或ZR / HF硅酸盐栅极电介质薄膜
公开(公告)号：US06399208B1
公开(公告)日：2002-06-04
申请号：US09414133
申请日：1999-10-07
申请人： Thomas H. Baum , Witold Paw
发明人： Thomas H. Baum , Witold Paw
IPC分类号： B32B900
CPC分类号： C23C16/401 , C09D1/00
摘要： A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.
摘要翻译：用于在衬底上形成锆和/或硅酸铪膜的前体组合物，例如通过化学气相沉积（CVD）。说明性的前体组合物包括（1）第一前体金属化合物或络合物，其包含与金属M配位的硅烷醇（硅氧烷）配体，其中M = Zr或Hf，和（2）第二前体金属化合物或络合物，包括脂族醇酸配体与金属M配位，其中M = Zr或Hf，其中第一和第二前体相对于彼此的相对比例用于可控地建立沉积的硅酸盐薄膜中的M / Si比。前体组合物可以含有溶剂介质，使得组合物适于液体输送CVD，以形成用于制造微电子器件的稳定的薄膜栅极电介质。

85. 发明授权

US06350643B1 Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom 失效
标题翻译：金属氧化物陶瓷由于其移动物质的扩散而降低
公开(公告)号：US06350643B1
公开(公告)日：2002-02-26
申请号：US09216370
申请日：1998-12-18
申请人： Frank S. Hintermaier , Jeffrey F. Roeder , Bryan C. Hendrix , Debra A. Desrochers , Thomas H. Baum
发明人： Frank S. Hintermaier , Jeffrey F. Roeder , Bryan C. Hendrix , Debra A. Desrochers , Thomas H. Baum
IPC分类号： H01L218242
CPC分类号： C04B35/495 , C04B35/497 , C04B35/62222 , C04B2235/3251 , C04B2235/3296 , C04B2235/76 , C23C16/40 , C23C16/408 , C23C16/56 , H01L21/02197 , H01L21/02271 , H01L21/02356 , H01L21/31691
摘要： Reduced diffusion of excess mobile specie from a metal oxide ceramic is achieved by tailoring the composition an/or deposition parameters. A barrier layer which reacts with the excess mobile specie is provided below the metal oxide ceramic to prevent or reduce the diffusion of the excess mobile specie through the bottom electrode and into the substrate.
摘要翻译：多余的移动物质从金属氧化物陶瓷的减少的扩散是通过调整组合物/沉积参数来实现的。在金属氧化物陶瓷的下面设置有与多余的流动物质反应的阻挡层，以防止或减少多余的流动物质通过底部电极并进入衬底中的扩散。

86. 发明授权

US06340769B1 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor 有权
标题翻译：铱基材料和基体上的结构的制备方法及其铱源试剂
公开(公告)号：US06340769B1
公开(公告)日：2002-01-22
申请号：US09453995
申请日：1999-12-03
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C07F1500
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide. Useful precursors include Lewis base stabilized Ir(I) &bgr;-diketonates and Lewis base stabilized Ir(I) &bgr;-ketoiminates. The iridium deposited on the substrate may then be etched for patterning an electrode, followed by depositing on the electrode a dielectric or ferroelectric material, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FRAMs, hybrid systems, smart cards and communication systems.
摘要翻译：一种在含有铱的膜的基底上形成含铱膜的方法，该方法是通过分解前体并在氧化环境中将铱沉积在氧化环境环境中的方法，其可分解成在基底上沉积铱氧气，臭氧，空气和氮氧化物等氧化气体。有用的前体包括路易斯碱稳定的Ir（I）β-二酮酸酯和路易斯碱稳定的Ir（I）β-酮缩酮。然后可以蚀刻沉积在衬底上的铱以图案化电极，随后在电极上沉积电介质或铁电材料，用于制造诸如DRAM，FRAM，混合系统，智能卡和通信系统的薄膜电容器半导体器件。

87. 发明授权

US06340386B1 MOCVD of SBT using toluene based solvent system for precursor delivery 失效
标题翻译： SBT的MOCVD使用甲苯为基础的溶剂系统用于前体递送
公开(公告)号：US06340386B1
公开(公告)日：2002-01-22
申请号：US09440235
申请日：1999-11-15
申请人： Bryan C. Hendrix , Thomas H. Baum , Debra Desrochers Christos , Jeffrey F. Roeder
发明人： Bryan C. Hendrix , Thomas H. Baum , Debra Desrochers Christos , Jeffrey F. Roeder
IPC分类号： C09K300
CPC分类号： C23C16/409 , C07F9/94 , Y10S427/101
摘要： A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
摘要翻译：用于液体输送MOCVD的溶剂组合物，其包含甲苯和路易斯碱，其中基于甲苯和路易斯碱的总体积，甲苯的存在浓度为约75-98体积％。这样的溶剂组合物有用地用于溶解或悬浮其中的前体用于液体输送MOCVD，例如诸如SBT的铁电材料膜的MOCVD。

88. 发明授权

US06303391B1 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices 失效
标题翻译：用于形成用于铁电存储器件的含铋陶瓷膜的低温化学气相沉积工艺
公开(公告)号：US06303391B1
公开(公告)日：2001-10-16
申请号：US08975087
申请日：1997-11-20
申请人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/56
摘要： A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
摘要翻译：使用三（β-二酮）铋前体的低温CVD方法，用于沉积适合于制造铁电存储器件的一体化的铋陶瓷薄膜。可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。

89. 发明授权

US06284654B1 Chemical vapor deposition process for fabrication of hybrid electrodes 失效
标题翻译：用于制造混合电极的化学气相沉积工艺
公开(公告)号：US06284654B1
公开(公告)日：2001-09-04
申请号：US09061380
申请日：1998-04-16
申请人： Jeffrey F. Roeder , Thomas H. Baum , Peter C. Van Buskirk
发明人： Jeffrey F. Roeder , Thomas H. Baum , Peter C. Van Buskirk
IPC分类号： H01L2144
CPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , H01L28/55 , H01L28/75
摘要： A method of fabricating an electrode structure for a ferroelectric device structure including a ferroelectric material, involving chemical vapor deposition of a hybrid electrode constituting a multilayer electrode structure or an alloyed electrode structure, using either bubbler delivery or liquid delivery chemical vapor deposition.
摘要翻译：制造包括铁电材料的铁电体器件结构的电极结构的方法，所述铁电体材料包括使用起泡器输送或液体输送化学气相沉积来构成多层电极结构的混合电极或合金电极结构的化学气相沉积。

90. 发明授权

US06254792B1 Isotropic dry cleaning process for noble metal integrated circuit structures 失效
标题翻译：贵金属集成电路结构各向同性干洗工艺
公开(公告)号：US06254792B1
公开(公告)日：2001-07-03
申请号：US09093291
申请日：1998-06-08
申请人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter C. Kirlin , Thomas H. Baum
发明人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter C. Kirlin , Thomas H. Baum
IPC分类号： C23F112
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
摘要翻译：通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

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