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81. 发明申请

US20050090031A1 Method for fabricating a component having an electrical contact region, and component having an electrical contact region 有权
标题翻译：用于制造具有电接触区域的部件的方法，以及具有电接触区域的部件
公开(公告)号：US20050090031A1
公开(公告)日：2005-04-28
申请号：US10770693
申请日：2004-02-02
申请人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
发明人： Stefan Illek , Peter Stauss , Andreas Ploessl , Gudrun Diepold , Ines Pietzonka , Wilhelm Stein , Ralph Wirth , Walter Wegleiter
IPC分类号： H01S5/042 , H01L33/00 , H01L33/30 , H01L33/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L29/20 , H01L29/24 , H01L31/0304
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/30 , Y10S438/933
摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.
摘要翻译：一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料然后将外层退火。掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域使用所述方法。

82. 发明授权

US06710374B2 Light-emitting semiconductor component 有权
标题翻译：发光半导体元件
公开(公告)号：US06710374B2
公开(公告)日：2004-03-23
申请号：US10324433
申请日：2002-12-20
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L2715
CPC分类号： H01L33/38 , H01L33/20
摘要： A light-emitting semiconductor component includes a thin film stack having a front side and a rear side, a photon-emitting zone formed in an active layer, and contact points formed on the front side and rear side of the thin film stack to impress current into the active layer. The photon-emitting zone is separated physically from the contact points in the plane of the thin film stack. As a result, the absorption of the radiation at the contact points can be minimized.
摘要翻译：发光半导体部件包括具有前侧和后侧的薄膜叠层，形成在有源层中的光子发射区和形成在薄膜叠层的前侧和后侧上的接触点，以将电流进行印刷进入活动层。光子发射区物理地与薄膜堆叠平面中的接触点分离。结果，可以使接触点处的辐射的吸收最小化。

83. 发明授权

US09538609B2 Optoelectronic device 有权
标题翻译：光电器件
公开(公告)号：US09538609B2
公开(公告)日：2017-01-03
申请号：US13637438
申请日：2011-03-30
申请人： Horst Varga , Ralph Wirth
发明人： Horst Varga , Ralph Wirth
IPC分类号： H05B37/02 , H05B33/08
CPC分类号： H05B37/02 , H05B33/0872
摘要： An optoelectronic device that radiates mixed light including a first semiconductor light source which radiates light in a first wavelength range at a first intensity, a second semiconductor light source which radiates light in a second wavelength range at a second intensity, a third semiconductor light source which radiates light in a third wavelength range at a third intensity, a resistance element having a temperature-dependent electrical resistance, and a semiconductor light source control element that controls the intensity of the third semiconductor light source.
摘要翻译：一种光电子器件，其辐射包括以第一强度辐射第一波长范围的光的第一半导体光源的混合光，以第二强度辐射第二波长范围的光的第二半导体光源，第三半导体光源，在第三强度的第三波长范围内照射光，具有温度依赖性电阻的电阻元件以及控制第三半导体光源的强度的半导体光源控制元件。

84. 发明授权

US09398664B2 Optoelectronic device that emits mixed light 有权
标题翻译：发射混合光的光电器件
公开(公告)号：US09398664B2
公开(公告)日：2016-07-19
申请号：US13128472
申请日：2009-11-13
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L33/00 , H05B33/08
CPC分类号： H05B33/0857 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic device includes a first semiconductor light source having a first light-emitting diode; a second semiconductor light source having a second light-emitting diode; and a resistance element having a temperature-dependent electrical resistance, wherein a first wavelength and/or a first intensity of light emitted by the first semiconductor light source have/has a first temperature dependence, and the second wavelength range and/or the second intensity of the fight emitted by the second semiconductor light source have/has a second temperature dependence different from the first temperature dependence, the resistance element and the first semiconductor light source form a series circuit, and the series circuit and the second semiconductor light source form a parallel circuit.
摘要翻译：光电子器件包括具有第一发光二极管的第一半导体光源; 具有第二发光二极管的第二半导体光源; 以及具有温度依赖性电阻的电阻元件，其中由所述第一半导体光源发射的第一波长和/或第一强度的光具有第一温度依赖性，并且所述第二波长范围和/或所述第二强度由第二半导体光源发射的战斗具有与第一温度依赖性不同的第二温度依赖性，电阻元件和第一半导体光源形成串联电路，并且串联电路和第二半导体光源形成并联电路。

85. 发明授权

US09012926B2 Radiation-emitting semiconductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US09012926B2
公开(公告)日：2015-04-21
申请号：US13389661
申请日：2010-08-05
申请人： Norwin von Malm , Ralph Wirth
发明人： Norwin von Malm , Ralph Wirth
IPC分类号： H01L29/18 , H01L27/15 , H01L33/38 , H01L33/20 , H01L33/32 , H01L33/08 , H01L33/50 , H01L33/62
CPC分类号： H01L27/153 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/50 , H01L33/62 , H01L2224/49107 , H01L2924/3011 , H01L2924/00
摘要： A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.
摘要翻译：辐射发射半导体部件包括具有至少两个发射区域的发光二极管芯片，所述至少两个发射区域可以彼此独立地操作和至少两个不同设计的转换元件。在发光二极管芯片的操作期间，每个发射区域被设置用于产生电磁一次辐射。每个发射区域具有发射表面，通过该发射表面，至少一部分初级辐射与发光二极管芯片分离。提供转换元件用于吸收至少一部分初级辐射并用于重新发射次级辐射。不同设计的转换元件设置在不同发射表面的下游。电阻元件串联或并联连接至至少一个发射区域。

86. 发明授权

US08835931B2 Optoelectronic component and method for producing an optoelectronic component 有权
标题翻译：光电子元件的制造方法
公开(公告)号：US08835931B2
公开(公告)日：2014-09-16
申请号：US13641650
申请日：2011-03-18
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L33/32 , H01L25/075 , H01L33/44 , H01L33/58 , H01L33/60 , H01L33/50
CPC分类号： H01L25/0753 , H01L33/44 , H01L33/50 , H01L33/58 , H01L33/60 , H01L2224/48463 , H01L2933/0091
摘要： An optoelectronic component for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. A first semiconductor chip for emitting electromagnetic radiation in a first spectral range is provided on a carrier. Furthermore, at least one a second semiconductor chip for emitting electromagnetic radiation in a second spectral range is provided on the carrier. The first and second spectral ranges differ from one another. The first semiconductor chip and the second semiconductor chip are arranged in a single package. The first semiconductor chip is optically isolated from the second semiconductor chip by a barrier. The first semiconductor chip and the second semiconductor chip are arranged centosymmetrically about a common center o(Z) of symmetry.
摘要翻译：用于混合具有不同波长的电磁辐射的光电子部件，更特别在远场中。用于在第一光谱范围内发射电磁辐射的第一半导体芯片设置在载体上。此外，在载体上提供至少一个用于在第二光谱范围内发射电磁辐射的第二半导体芯片。第一和第二光谱范围彼此不同。第一半导体芯片和第二半导体芯片布置在单个封装中。第一半导体芯片通过屏障与第二半导体芯片光学隔离。第一半导体芯片和第二半导体芯片围绕共同的对称中心o（Z）以对称的方式布置。

87. 发明申请

US20140247605A1 METHOD FOR PRODUCING AN OPTICAL ELEMENT 审中-公开
标题翻译：生产光学元件的方法
公开(公告)号：US20140247605A1
公开(公告)日：2014-09-04
申请号：US14348123
申请日：2012-08-23
申请人： Gertrud Kraeuter , Ralph Wirth
发明人： Gertrud Kraeuter , Ralph Wirth
IPC分类号： C03C4/12 , F21V8/00 , F21V5/04
CPC分类号： C03C4/12 , F21V5/04 , G02B6/0001
摘要： A method for producing an optical element made of quartz glass, said element being designed for a conversion of pump light, may include providing a sol having a silicon precursor, admixing the sol with at least one luminescent substance and one luminescent substance educt, gelling the sol to form a gel body, and sintering the gel body to form a quartz glass solid.
摘要翻译：用于制造由石英玻璃制成的光学元件的方法，所述元件被设计用于泵浦光的转换，可以包括提供具有硅前体的溶胶，将所述溶胶与至少一种发光物质和一种发光物质的析出物混合，溶胶形成凝胶体，并烧结凝胶体以形成石英玻璃固体。

88. 发明授权

US08563998B2 Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component 有权
标题翻译：光电子半导体元件及其制造方法
公开(公告)号：US08563998B2
公开(公告)日：2013-10-22
申请号：US12934327
申请日：2009-03-26
申请人： Walter Wegleiter , Ralph Wirth , Bernd Barchmann
发明人： Walter Wegleiter , Ralph Wirth , Bernd Barchmann
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/56 , H01L33/62 , H01L2224/48091 , H01L2924/1815 , H01L2924/00014
摘要： An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.
摘要翻译：光电子半导体部件包括具有连接侧的连接支撑件，安装在连接侧并电连接到连接支撑件的至少一个光电子半导体芯片，施加到连接侧并且至少覆盖连接侧的粘合促进中间膜以及至少一个至少部分地围绕半导体芯片的辐射透射铸塑体，铸造体通过中间膜机械连接到连接支撑件。

89. 发明授权

US08558259B2 Optoelectronic component having a dome-like conversion element 有权
标题翻译：具有圆顶状转换元件的光电元件
公开(公告)号：US08558259B2
公开(公告)日：2013-10-15
申请号：US13128706
申请日：2009-11-02
申请人： Ralph Wirth
发明人： Ralph Wirth
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/50 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An optoelectronic component includes a connection carrier on which at least two radiation-emitting semiconductor chips are arranged, a conversion element fixed to the connection carrier, wherein the conversion element spans the semiconductor chips such that the semiconductor chips are surrounded by the conversion element and the connection carrier, and at least two of the radiation-emitting semiconductor chips differ from one another with regard to wavelengths of electromagnetic radiation they emit during operation, wherein the conversion element spans the semiconductor chips as a dome.
摘要翻译：光电子部件包括连接载体，在该连接载体上布置有至少两个辐射发射半导体芯片，转换元件固定到连接载体上，其中转换元件跨越半导体芯片，使得半导体芯片被转换元件和连接载体，并且至少两个辐射发射半导体芯片相对于在操作期间发射的电磁辐射的波长彼此不同，其中转换元件跨越半导体芯片作为圆顶。

90. 发明授权

US08405104B2 Luminescent diode chip with luminescence conversion element and angular filter element 有权
标题翻译：具有发光转换元件和角度滤光元件的发光二极管芯片
公开(公告)号：US08405104B2
公开(公告)日：2013-03-26
申请号：US12595356
申请日：2008-05-21
申请人： Klaus Streubel , Ralph Wirth
发明人： Klaus Streubel , Ralph Wirth
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/22 , H01L33/44 , H01L33/46
摘要： A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.
摘要翻译：发光二极管芯片包括产生第一波长的辐射的半导体本体。发光转换元件从第一波长的辐射产生第二波长的辐射。角度滤波器元件以相对于半导体主体的方向的主发射方向以特定角度反射照射在角度滤波器元件上的辐射。

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