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    • 84. 发明授权
    • Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O
Superconducting films
    • 用于形成Pb掺杂的Bi-Sr-Ca-Cu-O超导膜的多层沉积方法
    • US5141917A
    • 1992-08-25
    • US565209
    • 1990-08-09
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • B32B18/00C04B35/45H01L39/24
    • C04B35/45H01L39/2422Y10S505/731Y10S505/732Y10S505/742
    • A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
    • 通过以下步骤形成具有高含量,几乎单相的高Tc相的钙钛矿型超导体膜:沉积至少一种第一材料的第一膜(例如,Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系),在基板上构成钙钛矿型超导体; 沉积至少一个第二材料的第二材料,该第二材料包含氧化物或元素(Bi 2 O 3,Tl 2 O 3,PbO x等,特别是PbO x),其在800℃下蒸气压大于10 -4 Pa至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理,以在基板上形成钙钛矿型超导膜。 此外,确定沉积膜或叠层的优选组成。
    • 87. 发明授权
    • Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method
    • 光学传感器,光学传感器阵列,光学传感器驱动方法和光学传感器阵列驱动方法
    • US08669626B2
    • 2014-03-11
    • US12952979
    • 2010-11-23
    • Atsushi TanakaTakeshi Hama
    • Atsushi TanakaTakeshi Hama
    • H01L27/14
    • H01L31/112H01L27/1446
    • An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×1014/cm3 to 1.0×1017/cm3, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.
    • 一种光学传感器,其是包括载流子浓度为1.0×10 14 / cm 3至1.0×101 7 / cm 3的半导体材料的栅电极的晶体管,包括通过相同载流子形成沟道的半导体层的有源层 作为栅电极,源电极,漏电极和栅极绝缘膜,其中当光照射到源极电极和栅极绝缘膜上时,通过在源电极和漏极之间流动的电流的值的变化来检测照射光的强度 形成在栅电极中的耗尽层; 提供光学传感器阵列,光学传感器驱动方法和光学传感器阵列驱动方法。
    • 89. 发明申请
    • COMPUTER SYSTEM AND MANAGEMENT METHOD THEREOF
    • 计算机系统及其管理方法
    • US20130205164A1
    • 2013-08-08
    • US13500138
    • 2012-02-02
    • Atsushi TanakaMasaru Orii
    • Atsushi TanakaMasaru Orii
    • G06F13/14G06F11/20
    • H04L41/50H04L41/5016H04L45/125H04L47/822
    • The present invention makes it possible to dynamically and optimally change QoS while taking the balance of a system as a whole into consideration. With the present invention, communications parameters comprising band allocation information with respect to a plurality of interfaces of communications paths are set at a management device, and a host device, a switch device, and a storage device communicate based on the communications parameters that have been set. Then, in the system operation stage, the management device or the switch device acquires statistical information comprising band usage amounts with respect to the communications paths among a port of the host device, a port of the storage device, and a port, of the switch device, changes, based on the statistical information, the band allocation that has been set with respect to the plurality of interfaces, and, further, determines whether or not the band allocation as changed is appropriate with respect to the system (see FIG. 9).
    • 本发明使得可以在考虑整个系统的平衡的同时动态地和最佳地改变QoS。 利用本发明,在管理设备处设置包括关于通信路径的多个接口的频带分配信息的通信参数,并且主机设备,交换机设备和存储设备基于已经被通信的通信参数进行通信 组。 然后,在系统运行阶段,管理装置或交换机装置获取关于主机装置的端口,存储装置的端口和端口之间的通信路径的频带使用量的统计信息 设备,基于统计信息,已经针对多个接口设置的频带分配进行改变,并且还确定相对于系统是否适合改变的频带分配(参见图9 )。