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81. 发明申请

US20070091470A1 IMAGING LENS 有权
标题翻译：成像镜头
公开(公告)号：US20070091470A1
公开(公告)日：2007-04-26
申请号：US11580422
申请日：2006-10-12
申请人： Tomohiro Saito
发明人： Tomohiro Saito
IPC分类号： G02B9/12
CPC分类号： G02B13/0035 , G02B9/12
摘要： It is to provide an imaging lens that maintains optical performance and achieves reduction in size and weight. The imaging lens comprises, in order from an object side towards an image surface side, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, a diaphragm, a second lens which is a meniscus lens having a positive power whose convex surface faces the image surface side, and a third lens which is a biconcave lens having a negative power, wherein the following conditions are to be satisfied; 1.3≧L/fl≧1, 0.8≧f1/fl≧0.6, 0.1 2≧f1/f2>0, −0.1≧f1/f3≧−0.25 (where, L: entire length of the lens system [distance from the surface of the object side of the first lens to the image taking surface [air reduced length ]], fl: focal distance of the entire lens system, f1: focal distance of the first lens, f2: focal distance of the second lens, and f3: focal distance of the third lens)
摘要翻译：它是提供保持光学性能并实现尺寸和重量的减小的成像透镜。成像透镜从物体侧朝向图像面侧依次包括作为其凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜，隔膜，作为弯月形透镜的第二透镜，具有凸面朝向图像面侧的正电力以及具有负电力的双凹透镜的第三透镜，其中满足以下条件; 1.3> = L / fl> = 1，0.8> = f 1 / f 1 = 0.6,0.1 2> = f 1 / f 2 > 0，-0.1> = f 1 / f 3 3 / / SUB >> = - 0.25（其中，L：透镜系统的整个长度[距物体表面的距离第一透镜的一侧到图像拍摄表面[空气减小的长度]]，fl：整个透镜系统的焦距，f <1 ：第一透镜的焦距，f <2 < / SUB>：第二透镜的焦距和f 3 3：第三透镜的焦距）

82. 发明授权

US07198994B2 Semiconductor device and manufacturing method of semiconductor device 失效
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US07198994B2
公开(公告)日：2007-04-03
申请号：US10991485
申请日：2004-11-19
申请人： Atsushi Yagishita , Tomohiro Saito
发明人： Atsushi Yagishita , Tomohiro Saito
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/84 , H01L27/1203
摘要： Dummy gate patterns 111, 112 are formed on a silicon active layer 103 of an SOI substrate, and thereafter, these dummy gate patterns 111, 112 are removed to form gate grooves 130, 132. A threshold voltage of each transistor is adjusted by etching a silicon active layer 103 in any one of these gate, grooves 130, 132 to reduce a thickness of a portion constituting a channel region. This enables the enhancement of freedom degree and so on in circuit designing according to conditions.
摘要翻译：在SOI衬底的硅有源层103上形成虚拟栅极图案111,112，然后去除这些虚拟栅极图案111,112以形成栅极沟槽130,132。通过蚀刻栅极图案111,112来调节每个晶体管的阈值电压这些栅极，沟槽130,132中的任一个中的硅有源层103，以减小构成沟道区域的部分的厚度。这样可以根据条件提高电路设计中的自由度等。

83. 发明授权

US07179555B2 Fuel cell system 失效
标题翻译：燃料电池系统
公开(公告)号：US07179555B2
公开(公告)日：2007-02-20
申请号：US10353373
申请日：2003-01-29
申请人： Hiroyasu Kudou , Tomohiro Saito , Toshiyuki Kawai , Kunio Okamoto , Akimasa Osaki
发明人： Hiroyasu Kudou , Tomohiro Saito , Toshiyuki Kawai , Kunio Okamoto , Akimasa Osaki
IPC分类号： H01M8/04 , H01M2/18 , H01M8/24
CPC分类号： H01M8/04067 , H01M8/0258 , H01M8/0263 , H01M8/0267 , H01M8/04029 , H01M8/04074 , H01M8/04097 , H01M8/04126 , H01M8/04223 , H01M8/04225 , H01M8/04358 , H01M8/04768 , H01M8/241 , H01M8/2483 , H01M2250/20 , Y02T90/32
摘要： In a fuel cell system, a fuel cell includes plural stacked cells, a circulation passage for circulating a thermal medium to the fuel cell. The fuel cell has therein a plurality of thermal medium passages through which the thermal medium flows, and the thermal medium passages are provided such that the thermal medium from the circulation passage independently flows through the thermal medium passages. The thermal medium passages in the fuel cell have inlet portions from which the thermal medium is introduced, and outlet portions from which the thermal medium is discharged. In the fuel cell system, at least one-side portions among the inlet portions and the outlet portions are provided independently. Accordingly, a circulation area of the thermal medium in the fuel cell can be selectively changed, and a part of the fuel cell can be effectively heated to generate electrical power in this part.
摘要翻译：在燃料电池系统中，燃料电池包括多个堆叠的电池，用于将热介质循环到燃料电池的循环通道。燃料电池在其中具有多个热介质通道，热介质流过该通道，并且热介质通道设置成使得来自循环通道的热介质独立地流过热介质通道。燃料电池中的热介质通道具有引入热介质的入口部分和热介质从其排出的出口部分。在燃料电池系统中，独立地设置入口部和出口部中的至少一个侧部。因此，可以选择性地改变燃料电池中的热介质的循环面积，并且能够有效地加热部分燃料电池，从而在该部分中产生电力。

84. 发明申请

US20060228885A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060228885A1
公开(公告)日：2006-10-12
申请号：US11266241
申请日：2005-11-04
申请人： Tomohiro Saito
发明人： Tomohiro Saito
IPC分类号： H01L21/44 , H01L21/28 , H01L21/4763
CPC分类号： H01L29/4975 , H01L21/28097 , H01L29/517 , H01L29/518 , H01L29/665
摘要： A method of manufacturing a semiconductor device includes forming a gate insulation film on a semiconductor substrate; forming a gate electrode on the gate insulation film; depositing a metal film on the gate electrode; siliciding an upper part of the gate electrode by carrying out a first heat treating; removing the metal film not silicided in the first heat treating; and siliciding the gate electrode to a lower part of the gate electrode by carrying out a second heat treating.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 在栅电极上沉积金属膜; 通过进行第一热处理来硅化栅电极的上部; 在第一次热处理中除去未被硅化的金属膜; 并且通过进行第二热处理将栅电极硅化到栅电极的下部。

85. 发明授权

US07084022B2 Method of manufacturing a semiconductor device including forming a pattern, an interlayer insulation film, exposing the patterning and flattening 有权
标题翻译：制造半导体器件的方法，包括形成图案，层间绝缘膜，曝光图案化和平坦化
公开(公告)号：US07084022B2
公开(公告)日：2006-08-01
申请号：US10730903
申请日：2003-12-10
申请人： Tomohiro Saito
发明人： Tomohiro Saito
IPC分类号： H01L21/338 , H01L21/3205 , H01L21/302 , H01L21/461
CPC分类号： H01L21/823456 , H01L21/28079 , H01L21/31053 , H01L27/0207 , H01L29/495 , H01L29/66545 , H01L29/6656
摘要： A method of manufacturing a semiconductor device comprises: forming a first pattern in a first region over a semiconductor substrate; forming a second pattern in a second region separated from the first region over the semiconductor substrate; depositing an interlayer insulation film to cover the first and second patterns; forming a photoresist film on the interlayer insulation film; treating the photoresist film in stepper exposure and development to form a photoresist pattern of a photomask having its device pattern matched with the first pattern and its alignment marks matched with the second pattern; selectively etching off the interlayer insulation film over the first and second patterns, with the photoresist pattern; and after removing the photoresist pattern, flattening the interlayer insulation film to expose the surfaces of the first and second patterns, respectively.
摘要翻译：制造半导体器件的方法包括：在半导体衬底上的第一区域中形成第一图案; 在与所述半导体衬底上的所述第一区域分离的第二区域中形成第二图案; 沉积层间绝缘膜以覆盖第一和第二图案; 在层间绝缘膜上形成光致抗蚀剂膜; 在步进曝光和显影中处理光致抗蚀剂膜以形成具有与第一图案匹配的器件图案及其与第二图案匹配的对准标记的光掩模的光致抗蚀剂图案; 利用光致抗蚀剂图案，在第一和第二图案上选择性地蚀刻层间绝缘膜; 并且在去除光致抗蚀剂图案之后，使层间绝缘膜平坦化以分别露出第一和第二图案的表面。

86. 发明授权

US07022580B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07022580B2
公开(公告)日：2006-04-04
申请号：US10222813
申请日：2002-08-19
申请人： Katsuaki Natori , Tomohiro Saito , Yoshihiro Uozumi
发明人： Katsuaki Natori , Tomohiro Saito , Yoshihiro Uozumi
IPC分类号： H01L21/20
CPC分类号： H01L28/55 , H01L21/76807 , H01L27/10852 , H01L28/40 , H01L28/75
摘要： A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrodes.
摘要翻译：一种半导体器件，包括半导体衬底和形成在半导体衬底上的多个电容器。电容器包括形成在半导体衬底上的多个下电极，连续地覆盖多个下电极的铁电膜和形成在铁电体膜的表面上的上电极，其中形成每个电容器多个下电极。

87. 发明申请

US20050130005A1 Fuel cell system 失效
标题翻译：燃料电池系统
公开(公告)号：US20050130005A1
公开(公告)日：2005-06-16
申请号：US11050227
申请日：2005-02-03
申请人： Tomohiro Saito , Toshiyuki Kawai , Kunio Okamoto , Akimasa Osaki , Hiroyasu Kudou
发明人： Tomohiro Saito , Toshiyuki Kawai , Kunio Okamoto , Akimasa Osaki , Hiroyasu Kudou
IPC分类号： H01M8/02 , H01M8/04 , H01M8/24
CPC分类号： H01M8/0267 , H01M8/04007 , H01M8/04029 , H01M8/04037 , H01M8/04074 , H01M8/04097 , H01M8/04223 , H01M8/04225 , H01M8/04268 , H01M8/04358 , H01M8/04365 , H01M8/04417 , H01M8/04723 , H01M8/04731 , H01M8/04768 , H01M8/04955 , H01M8/241 , H01M8/2457 , H01M8/2483
摘要： A fuel cell system includes a fuel cell constructed by plural stacked cells, a circulation path through which a thermal medium is circulated into each cell, a heater for heating the thermal medium, a bypass path through which the thermal medium is circulated into a part of each cell while bypassing the other part thereof, and a flow control valve for controlling a flow amount of the thermal medium circulated in the bypass path. The thermal medium can be circulated into only the part of each cell in a warm-up operation, so that the part of each cell is collectively heated. An amount of the thermal medium circulated into the other part of each cell is controlled, so that all of each cell is finally warmed up in the warm-up operation.
摘要翻译：燃料电池系统包括由多个堆叠的电池构成的燃料电池，将热介质循环到每个电池中的循环路径，用于加热热介质的加热器，将热介质循环到其中的一部分的旁路每个单元旁路其另一部分;以及流量控制阀，用于控制在旁路通路中循环的热介质的流量。热介质可以在预热操作中仅循环到每个电池的部分，使得每个电池的一部分被集中加热。控制流入每个电池单元的其他部分的热介质量，使得在预热操作中最终加热每个电池单元。

88. 发明授权

US06879001B2 Semiconductor device and manufacturing method of semiconductor device 失效
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US06879001B2
公开(公告)日：2005-04-12
申请号：US10393017
申请日：2003-03-21
申请人： Atsushi Yagishita , Tomohiro Saito
发明人： Atsushi Yagishita , Tomohiro Saito
IPC分类号： H01L21/28 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L27/01
CPC分类号： H01L21/84 , H01L27/1203
摘要： Dummy gate patterns 111, 112 are formed on a silicon active layer 103 of an SOI substrate, and thereafter, these dummy gate patterns 111, 112 are removed to form gate grooves 130, 132. A threshold voltage of each transistor is adjusted by etching a silicon active layer 103 in any one of these gate grooves 130, 132 to reduce a thickness of a portion constituting a channel region. This enables the enhancement of freedom degree and so on in circuit designing according to conditions.
摘要翻译：在SOI衬底的硅有源层103上形成虚拟栅极图案111,112，然后去除这些虚拟栅极图案111,112以形成栅极沟槽130,132。通过蚀刻栅极图案111,112来调节每个晶体管的阈值电压这些栅极沟槽130,132中的任何一个中的硅有源层103，以减小构成沟道区域的部分的厚度。这样可以根据条件提高电路设计中的自由度等。

89. 发明申请

US20050040473A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050040473A1
公开(公告)日：2005-02-24
申请号：US10864367
申请日：2004-06-10
申请人： Tomohiro Saito
发明人： Tomohiro Saito
IPC分类号： H01L21/28 , H01L21/336 , H01L29/417 , H01L29/45 , H01L29/78 , H01L29/786 , H01L29/76
CPC分类号： H01L29/66772 , H01L29/41733 , H01L29/458 , H01L29/6656 , H01L29/78621
摘要： A semiconductor device is disclosed, which comprises a semiconductor substrate, a source/drain region formed in a surface region of the semiconductor substrate, a gate insulating film formed on the surface region of the semiconductor substrate, a gate electrode formed on the gate insulating film, and a silicide layer formed on a region of the source/drain region, which region is not covered by the gate electrode, an area of the silicide layer being smaller than that of the region not covered by the gate electrode.
摘要翻译：公开了一种半导体器件，其包括半导体衬底，形成在半导体衬底的表面区域中的源极/漏极区域，形成在半导体衬底的表面区域上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极以及形成在源极/漏极区域的区域上的硅化物层，该区域未被栅极电极覆盖，硅化物层的面积小于未被栅极电极覆盖的区域的面积。

90. 发明授权

US06710814B1 Digital broadcast receiving system for detecting short-breaks and holding information based on same 有权
标题翻译：数字广播接收系统，用于检测短信和保存信息
公开(公告)号：US06710814B1
公开(公告)日：2004-03-23
申请号：US09555479
申请日：2000-07-26
申请人： Kohei Ueno , Akinori Hashimoto , Hisakazu Katoh , Hajime Matsumura , Tomohiro Saito
发明人： Kohei Ueno , Akinori Hashimoto , Hisakazu Katoh , Hajime Matsumura , Tomohiro Saito
IPC分类号： H04N504
CPC分类号： H04N21/4382 , H04N5/04 , H04N5/4401 , H04N21/4305 , H04N21/44209
摘要： A receiver is constructed so that it detects a short-break of a digital broadcasting wave by the absence of a synchronizing code or by a transmission control signal multiplexed with the broadcasting wave and, according to the short-break detection signal, holds data and state information (program arrangement, and reference time information) obtained by an antenna and converter (1), tuner and digital decoding portion (2), an error correction code decoding portion (3), a stream multiplexed signal separating portion (4), an audio/video decoding portion (5) and the other components and performs a process for optimally changing characteristics of closed loops for establishing synchronization.
摘要翻译：接收机被构造为通过不存在同步码或通过与广播波复用的传输控制信号来检测数字广播波的短暂断裂，并且根据短路检测信号保存数据和状态通过天线和转换器（1），调谐器和数字解码部分（2），纠错码解码部分（3），流多路复用信号分离部分（4）获得的信息（节目安排和参考时间信息）音频/视频解码部分（5）和其他组件，并且执行用于最佳地改变用于建立同步的闭环的特性的处理。

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