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81. 发明申请

US20070075148A1 Wireless IC tag and manufacturing method of the same 失效
标题翻译：无线IC标签及其制造方法相同
公开(公告)号：US20070075148A1
公开(公告)日：2007-04-05
申请号：US11453850
申请日：2006-06-16
申请人： Mitsuo Usami
发明人： Mitsuo Usami
IPC分类号： G06K19/06
CPC分类号： G06K19/07749 , G06K19/0716
摘要： A compact wireless IC tag incorporating a pressure sensor in an IC chip. The IC chip of the wireless IC tag has SOI structure comprising a silicon sheet layer, a silicon device layer which is formed on the upper side of the silicon sheet layer, and a thin silicon oxide layer having about 0.01 μm to 5 μm thickness sandwiched between the silicon sheet layer and silicon device layer. In the silicon device layer, a capacitive element of a pressure sensor comprising of a gap, and a first metal wiring and a second metal wiring respectively disposed on the upper and lower sides of the gap, is formed. In the silicon sheet layer on the lower side of the capacitive element, an aperture filled with rubber-like elastic material is formed.
摘要翻译：在IC芯片中集成了压力传感器的紧凑型无线IC标签。无线IC标签的IC芯片具有SOI结构，其包括硅片层，形成在硅片层上侧的硅器件层和夹在其间的约0.01μm至5μm厚度的薄氧化硅层硅片层和硅器件层。在硅器件层中，形成包括间隙的压力传感器的电容元件和分别设置在间隙的上侧和下侧上的第一金属布线和第二金属布线。在电容元件下侧的硅片层中，形成填充有橡胶状弹性材料的孔。

82. 发明授权

US07119662B1 Service system, information processing system and interrogator 有权
标题翻译：服务体系，信息处理系统和询问器
公开(公告)号：US07119662B1
公开(公告)日：2006-10-10
申请号：US09666862
申请日：2000-09-21
申请人： Akiko Horiguchi , Mitsuo Usami , Masaru Ohki
发明人： Akiko Horiguchi , Mitsuo Usami , Masaru Ohki
IPC分类号： B60R25/00 , G05B19/00 , G06F7/00 , G08B29/00 , H04B1/00
CPC分类号： B42D25/305 , B42D25/29 , B42D25/405 , B42D2033/46 , G06K19/07749 , G07D7/0047 , G07D7/01 , H04L9/3249 , H04L9/3263 , H04L2209/60 , H04L2209/80
摘要： A contactless IC chip is mounted or adhered on a certificate and used in a service system having an interrogator and a computer system. The interrogator and the computer system are interconnected via a network such as the Internet. The IC chip is used as an electronic tag and the interrogator receives first information by reading information printed on the certificate including a digital signature and by receiving second information from the electronic tag through an antenna of the interrogator. Then, the first information from the certificate and the digital signature are used by the computer to calculate third information that is compared with the second information received from the electronic tag. If the comparison results in a match, then the certificate is deemed authentic.
摘要翻译：非接触IC芯片安装或粘贴在证书上并用于具有询问器和计算机系统的服务系统中。询问器和计算机系统通过诸如因特网的网络互连。 IC芯片用作电子标签，询问器通过读取打印在包括数字签名的证书上的信息并通过询问器的天线从电子标签接收第二信息来接收第一信息。然后，计算机使用来自证书和数字签名的第一信息来计算与从电子标签接收到的第二信息进行比较的第三信息。如果比较结果匹配，则证书被认为是真实的。

83. 发明申请

US20060114103A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060114103A1
公开(公告)日：2006-06-01
申请号：US10540268
申请日：2003-12-24
申请人： Mitsuo Usami
发明人： Mitsuo Usami
IPC分类号： H04Q5/22
CPC分类号： G06K7/10039 , G06K7/0008 , G06K19/0723
摘要： An IC chip (12) having a memory (16) for memorizing a first random number (11) and information other than the first random number (11) (identification number 17 and the like) and for transmitting information in the memory (16) non-contact condition with a time difference according to a numeric value of the first random number (11). By setting the first random number (11) in a memory address counter (13) of the IC chip (12) for time difference control, the memory address counter (13) can be used for memory data transmission control at the same time, thereby building up a logic simply. As a consequence, it is possible to construct a semiconductor device capable of anti-collision control in the size of 0.5 mm square or less.
摘要翻译：具有用于存储第一随机数（11）的存储器（16）和除第一随机数（11）之外的信息（识别号17等）并用于在存储器（16）中发送信息的IC芯片（12）具有根据第一随机数（11）的数值的时间差的非接触状态。通过将IC芯片（12）的存储器地址计数器（13）中的第一随机数（11）设置为时差控制，存储器地址计数器（13）可以同时用于存储器数据传输控制，从而建立逻辑简单。结果，可以构成能够以0.5mm见方或更小的尺寸进行防碰撞控制的半导体装置。

84. 发明授权

US06930401B2 Electronic device and method of manufacture the same 失效
公开(公告)号：US06930401B2
公开(公告)日：2005-08-16
申请号：US10674337
申请日：2003-10-01
申请人： Mitsuo Usami
发明人： Mitsuo Usami
IPC分类号： B42D15/10 , G06K7/00 , G06K19/04 , G06K19/07 , G06K19/077 , H01L21/50 , H01L23/051 , H01L23/08 , H01L23/29 , H01L23/31 , H01L23/48 , H01L23/552 , H01L23/64 , H01L23/28 , H01L23/34
CPC分类号： H01L24/01 , G06K7/0008 , G06K19/02 , G06K19/041 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07786 , H01L21/50 , H01L23/051 , H01L23/08 , H01L23/291 , H01L23/3107 , H01L23/48 , H01L23/4827 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/83 , H01L2223/6677 , H01L2224/274 , H01L2224/45124 , H01L2224/83801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12036 , H01L2924/12041 , H01L2924/14 , H01L2924/16588 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01Q1/2283 , H01L2924/00 , H01L2224/48 , H01L2224/83205
摘要： An electronic device, in which a flat plate semiconductor and dumets connected to surface electrodes on the front and back surfaces of the semiconductor and to lead wires are encapsulated in a glass tube.

85. 发明申请

US20050134460A1 Antenna for radio frequency identification 失效
标题翻译：射频识别天线
公开(公告)号：US20050134460A1
公开(公告)日：2005-06-23
申请号：US11002083
申请日：2004-12-03
申请人： Mitsuo Usami
发明人： Mitsuo Usami
IPC分类号： B42D15/10 , B65D23/00 , B65D25/20 , G06K19/07 , G06K19/077 , H01Q1/22 , H01Q1/24 , H01Q1/38 , H01Q1/40 , H01Q7/00 , H01Q13/10 , H01Q23/00 , G08B13/14
CPC分类号： H01Q1/38 , G06K19/07749 , G06K19/07779 , G06K19/07783 , G06K19/07786 , H01L2224/16 , H01L2924/13091 , H01L2924/3011 , H01Q1/22 , H01Q7/00 , H01Q23/00
摘要： To provide an antenna shape devised to be integrated and compact. The antenna connected to an IC chip that performs wireless identification includes a slit that separates two connection points with respect to the IC chip, in which a length of the slit is approximately 3 millimeters, and a width of the slit is in a range of from 0.8 millimeter to 1.4 millimeters.
摘要翻译：为了提供一体化和紧凑的天线形状。连接到执行无线识别的IC芯片的天线包括狭缝，其相对于IC芯片分离两个连接点，其中狭缝的长度为大约3毫米，并且狭缝的宽度在从 0.8毫米至1.4毫米。

86. 发明授权

US06635968B2 Semiconductor device having improved alignment of an electrode terminal on a semiconductor chip and a conductor coupled to the electrode terminal 失效
公开(公告)号：US06635968B2
公开(公告)日：2003-10-21
申请号：US09775546
申请日：2001-02-05
申请人： Mitsuo Usami
发明人： Mitsuo Usami
IPC分类号： H01L2348
CPC分类号： H01L21/6835 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07779 , G06K19/07786 , H01L23/49838 , H01L23/49855 , H01L2221/68354 , H01L2221/68368 , H01L2224/83191 , H01L2924/01019 , H01L2924/07811 , H01L2924/19041 , Y10S257/91 , Y10S438/928 , H01L2924/00
摘要： A semiconductor device manufacturing method is used for packaging a thin semiconductor chip in an economical manner. A semiconductor chip having one electrode terminal, a first member having a first conductor on its surface, and a second member having a second conductor on its surface are prepared. The first and second members are positioned such that the first and second conductors face each other, and the semiconductor chip is held between the members. In this arrangement, one of the first and second conductors is in electrical contact with the first electrode.

87. 发明授权

US06573158B2 Methods of processing semiconductor wafer and producing IC card, and carrier 有权
公开(公告)号：US06573158B2
公开(公告)日：2003-06-03
申请号：US09991747
申请日：2001-11-26
申请人： Toshio Miyamoto , Kunihiro Tsubosaki , Mitsuo Usami
发明人： Toshio Miyamoto , Kunihiro Tsubosaki , Mitsuo Usami
IPC分类号： H01L2146
CPC分类号： H01L21/6835 , G06K19/077 , G06K19/07749 , G06K19/0775 , G06K19/07779 , G06K19/07783 , H01L23/49855 , H01L23/5388 , H01L24/27 , H01L24/28 , H01L24/83 , H01L2221/68318 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/16225 , H01L2224/16227 , H01L2224/2919 , H01L2224/81903 , H01L2224/8319 , H01L2224/838 , H01L2224/83851 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0665 , H01L2924/0781 , H01L2924/07811 , H01L2924/14 , H01L2924/19041 , H01L2924/3025 , H01L2924/3511 , H01L2924/00 , H01L2924/01022 , H01L2924/3512
摘要： The semiconductor wafer is made thin without any cracks and warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier 1 formed of a base 1a and a suction pad 1b provided on one surface of the base 1a or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier 1 in such a manner that a rear surface of the semiconductor wafer 2 with no circuit elements formed therein is opposite to the carrier to form a wafer composite 10, and the third step of holding the carrier of the wafer composite 10 with its semiconductor wafer 2 side up and spin-coating an etchant on the rear surface of the semiconductor wafer 2 thereby to make the semiconductor wafer 2 thin.

88. 发明授权

US06514796B2 Method for mounting a thin semiconductor device 失效
标题翻译：用于安装薄半导体器件的方法
公开(公告)号：US06514796B2
公开(公告)日：2003-02-04
申请号：US09729191
申请日：2000-12-05
申请人： Mitsuo Usami , Kunihiro Tsubosaki , Kunihiko Nishi
发明人： Mitsuo Usami , Kunihiro Tsubosaki , Kunihiko Nishi
IPC分类号： H01L2144
CPC分类号： H01L21/6835 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68322 , H01L2221/68327 , H01L2221/68354 , H01L2221/68363 , H01L2224/29 , H01L2224/29007 , H01L2224/2929 , H01L2224/293 , H01L2224/83191 , H01L2224/83192 , H01L2224/83194 , H01L2224/8385 , H01L2924/00013 , H01L2924/01004 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01061 , H01L2924/01082 , H01L2924/07802 , H01L2924/07811 , H01L2924/19043 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： A semiconductor chip (105′) and a substrate (102) are bonded with an organic adhesive layer (409) containing conductive particles (406), and a pad (405) and an electrode (412) are mutually, electrically connected through the conductive particles (406). The semiconductor chip (105′) is formed by contacting a semiconductor wafer (105) attached to a tape (107) with an etchant while rotating the semiconductor wafer (105) within an in-plane direction at a high speed or reciprocating the wafer (105) laterally to uniformly etch the semiconductor wafer (105) thereby reducing the thickness thereof, and dicing the thus reduced wafer. The resultant thin chip (105′) is hot-pressed by means of a heating head (106) for bonding on the substrate (102). In this way, a thin semiconductor chip can be formed stably at low costs and bonded on a substrate without causing any crack of the chip, thereby obtaining a semiconductor device which is unlikely to break owing to the bending stress from outside.
摘要翻译：半导体芯片（105'）和基板（102）与包含导电颗粒（406）的有机粘合剂层（409）接合，并且焊盘（405）和电极（412）相互电连接，通过导电颗粒（406）。半导体芯片（105'）通过使附接到带（107）的半导体晶片（105）与蚀刻剂接触而形成，同时以高速在平面内方向上旋转半导体晶片（105）或者使晶片（105）横向往复移动以均匀蚀刻半导体晶片（105），从而减小其厚度，并切割由此减小的晶片。所得到的薄片（105'）通过加热头（106）进行热压，用于在基板（102）上接合，以这种方式，可以以低成本稳定地形成薄的半导体芯片，并结合到基板而不会引起芯片的任何裂纹，从而获得由于来自外部的弯曲应力而不可能破裂的半导体器件。

89. 发明授权

US06486541B2 Semiconductor device and fabrication method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06486541B2
公开(公告)日：2002-11-26
申请号：US09953913
申请日：2001-09-18
申请人： Mitsuo Usami , Takashi Tase
发明人： Mitsuo Usami , Takashi Tase
IPC分类号： H01L2302
CPC分类号： G06K19/07728 , G06K19/077 , G06K19/07749 , H01L21/6835 , H01L23/49855 , H01L23/5388 , H01L23/5389 , H01L23/562 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L2221/6835 , H01L2221/68354 , H01L2221/68359 , H01L2224/24051 , H01L2224/24225 , H01L2224/24226 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/3511 , H01L2924/00 , H01L2224/05599
摘要： A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the semiconductor element, and a substrate is bonded on the lower surface of the thin film. A method for fabricating the thin-film semi-conductor device is also disclosed, in which a thin-film semiconductor circuit is formed on a silicon-on-insulator wafer, the silicon substrate on the reverse side of the silicon-on-insulator wafer is etched off, a thin-film semiconductor chip is formed and attached to the of substrate, and the thin-film semiconductor chip and the substrate are wired to each other by printing.
摘要翻译：公开了至少包括半导体元件和布线的薄膜半导体器件。在半导体元件的下表面上形成保护性绝缘材料的薄膜，并且在薄膜的下表面上接合基板。还公开了一种用于制造薄膜半导体器件的方法，其中在绝缘体上硅晶片上形成薄膜半导体电路，在硅绝缘体晶片的背面上的硅衬底被蚀刻掉，形成薄膜半导体芯片并将其附着于基板，并且通过印刷使薄膜半导体芯片和基板彼此连接。

90. 发明授权

US5986341A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5986341A
公开(公告)日：1999-11-16
申请号：US930083
申请日：1998-02-09
申请人： Mitsuo Usami , Kunihiro Tsubosaki , Masaru Miyazaki
发明人： Mitsuo Usami , Kunihiro Tsubosaki , Masaru Miyazaki
IPC分类号： B42D15/10 , G06K19/077 , H01L21/822 , H01L23/498 , H01L23/538 , H01L25/04 , H01L25/18 , H01L27/04 , H01L23/34
CPC分类号： G06K19/07728 , G06K19/07749 , G06K19/07779 , G06K19/07783 , G06K19/07784 , H01L23/49855 , H01L23/5388 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/12041 , H01L2924/14 , H01L2924/19041 , H01L2924/30107 , H01L2924/3511
摘要： A condenser, a coil and a thin-thickness integrated circuit are placed between an upper cover sheet and a lower cover sheet, and adhesive is filled into the space between them, whereby a card is fabricated. Because the condenser, the coil and the thin-thickness integrated circuit are extremely thin, the resulting semiconductor device is highly resistant to bending and highly reliable at a low cost.
摘要翻译： PCT No.PCT / JP96 / 01264 Sec。 371日期：1998年2月9日 102（e）1998年2月9日PCT PCT 1996年5月14日PCT公布。公开号WO96 / 36496 日期：1996年11月21日在上盖板和下盖板之间放置冷凝器，线圈和薄壁集成电路，并且将粘合剂填充到它们之间的空间中，由此制造卡片。由于冷凝器，线圈和薄型集成电路非常薄，因此所得到的半导体器件以低成本高度耐弯曲和高可靠性。

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