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81. 发明申请

US20080111776A1 Light Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20080111776A1
公开(公告)日：2008-05-15
申请号：US11968902
申请日：2008-01-03
申请人： Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
发明人： Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC分类号： G09G3/30 , G09G3/34
CPC分类号： G09G3/3225 , G09G3/2018 , G09G3/22 , G09G3/32 , G09G3/3275 , G09G2310/027 , G09G2310/0289 , G09G2330/021 , G09G2330/028
摘要： An object of the present invention is to provide a light emitting device that is able to suppress power consumption while a balance of white light is kept, without making a configuration of a power source circuit complicated. A power source potential corresponding to each color of a light emitting element is used as a higher electric potential of a video signal and an electric potential of a power source line in the case that a transistor for controlling a supply of electric current to the light emitting element is a p-channel TFT. Conversely, a power source potential corresponding to each color of a light emitting element is used as a lower electric potential of a video signal and an electric potential of a power source line in the case that a transistor for controlling a supply of electric current to the light emitting element is an n-channel TFT.
摘要翻译：本发明的目的是提供一种在不使电源电路的结构复杂化的同时保持白平衡的同时能够抑制功耗的发光装置。在用于控制向发光元件供给电流的晶体管的情况下，使用与发光元件的每种颜色相对应的电源电位作为视频信号的较高电位和电源线的电位元件是p沟道TFT。相反，在用于控制向电源供应电流的晶体管的情况下，将与发光元件的每种颜色相对应的电源电位用作视频信号的较低电位和电源线的电位发光元件是n沟道TFT。

82. 发明授权

US07352133B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07352133B2
公开(公告)日：2008-04-01
申请号：US10630939
申请日：2003-07-31
申请人： Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
发明人： Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC分类号： G09G3/10
CPC分类号： G09G3/3225 , G09G3/2018 , G09G3/22 , G09G3/32 , G09G3/3275 , G09G2310/027 , G09G2310/0289 , G09G2330/021 , G09G2330/028
摘要： An object of the present invention is to provide a light emitting device that is able to suppress power consumption while a balance of white light is kept, without making a configuration of a power source circuit complicated. A power source potential corresponding to each color of a light emitting element is used as a higher electric potential of a video signal and an electric potential of a power source line in the case that a transistor for controlling a supply of electric current to the light emitting element is a p-channel TFT. Conversely, a power source potential corresponding to each color of a light emitting element is used as a lower electric potential of a video signal and an electric potential of a power source line in the case that a transistor for controlling a supply of electric current to the light emitting element is an n-channel TFT.
摘要翻译：本发明的目的是提供一种在不使电源电路的结构复杂化的同时保持白平衡的同时能够抑制功耗的发光装置。在用于控制向发光元件供给电流的晶体管的情况下，使用与发光元件的每种颜色相对应的电源电位作为视频信号的较高电位和电源线的电位元件是p沟道TFT。相反，在用于控制向电源供应电流的晶体管的情况下，将与发光元件的每种颜色相对应的电源电位用作视频信号的较低电位和电源线的电位发光元件是n沟道TFT。

83. 发明授权

US07247995B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07247995B2
公开(公告)日：2007-07-24
申请号：US10860759
申请日：2004-06-04
申请人： Mitsuaki Osame , Aya Anzai , Yu Yamazaki
发明人： Mitsuaki Osame , Aya Anzai , Yu Yamazaki
IPC分类号： G09G3/10
CPC分类号： G09G3/3233 , G02F1/136204 , G09G3/2022 , G09G3/3275 , G09G2300/0426 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2310/061 , G09G2320/0223 , G09G2320/0233 , G09G2320/043 , G09G2330/04 , G09G2330/06 , H01L27/3244 , H01L27/3248 , H01L27/3276
摘要： A semiconductor device in which electrostatic discharge damage during manufacturing steps is prevented. More specifically, a semiconductor device in which electrostatic discharge damage during a step in which the formation of a pixel electrode is completed is prevented. A semiconductor device of the invention comprises a light emitting element, a driving transistor and a protection means disposed between the light emitting element and the driving transistor. The protection means comprises as least one of a resistor element, a capacitor element and a rectifier element. More specifically, the protection means is disposed between a pixel electrode of the light emitting element and a source electrode or a drain electrode of the driving transistor. It is to be noted that the rectifier element is an element having a rectifying function and corresponds to a diode or a transistor whose drain electrode and gate electrode are connected to each other.
摘要翻译：防止制造工序中的静电放电损坏的半导体装置。更具体地说，防止在形成像素电极的步骤中完成静电放电损坏的半导体器件。本发明的半导体器件包括发光元件，驱动晶体管和设置在发光元件和驱动晶体管之间的保护装置。保护装置包括电阻元件，电容器元件和整流元件中的至少一个。更具体地，保护装置设置在发光元件的像素电极和驱动晶体管的源电极或漏电极之间。要注意，整流元件是具有整流功能的元件，并且对应于二极管或漏极电极和栅电极彼此连接的晶体管。

84. 发明申请

US20050255617A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20050255617A1
公开(公告)日：2005-11-17
申请号：US11121073
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
发明人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
IPC分类号： H01J1/62 , H01J63/04 , H01L21/00 , H01L21/77 , H01L27/32 , H01L51/52 , H05B33/10
CPC分类号： H01L51/5262 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258
摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
摘要翻译：在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质。通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。第一基底绝缘膜在开口部的底面露出。随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。

85. 发明申请

US20050231122A1 Light-emitting device 有权
公开(公告)号：US20050231122A1
公开(公告)日：2005-10-20
申请号：US11147317
申请日：2005-06-08
申请人： Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
发明人： Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
IPC分类号： G09G3/32 , H01L27/32 , G09G3/10 , G09G3/36
CPC分类号： H01L33/08 , G09G3/3233 , G09G2300/0426 , G09G2300/0842 , G09G2310/0254 , G09G2320/043 , H01L27/3211 , H01L27/3262 , H01L27/3265 , H01L27/3295 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. A large holding capacitor Cs is not provided in the pixel portion but, instead, the channel length and the channel width of the driving TFTs are increased, and the channel capacitance is utilized as Cs. The channel length is selected to be very larger than the channel width to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT. In the case of the 3-transistor pixels, the switching TFT and the erasing TFT are linearly arranged to further increase the aperture ratio.

86. 发明申请

US20050205880A1 Display device and electronic appliance 审中-公开
标题翻译：显示设备和电子设备
公开(公告)号：US20050205880A1
公开(公告)日：2005-09-22
申请号：US11079598
申请日：2005-03-15
申请人： Aya Anzai , Jun Koyama , Hajime Kimura , Shunpei Yamazaki , Yoshifumi Tanada , Mitsuaki Osame
发明人： Aya Anzai , Jun Koyama , Hajime Kimura , Shunpei Yamazaki , Yoshifumi Tanada , Mitsuaki Osame
IPC分类号： G09G3/20 , G09G3/30 , G09G3/32 , H01L27/12 , H01L27/15 , H01L27/32 , H05B33/08
CPC分类号： G09G3/3258 , G09G3/2022 , G09G3/3266 , G09G3/3291 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2310/0256 , G09G2320/029 , G09G2320/041 , G09G2320/043 , G09G2330/02 , G09G2330/021 , H01L27/12 , H01L27/3211 , H01L27/3244 , H01L2251/568
摘要： A low power consumption display device and an electronic appliances are provided. The display device of the invention comprises a pixel region including a plurality of pixels, a source driver, a first gate driver, and a second gate driver. Each of the plurality of pixels includes a light emitting element, a first transistor for controlling a video signal input to the pixel, a second transistor for controlling emission/non-emission of the light emitting element.
摘要翻译：提供了低功耗显示装置和电子设备。本发明的显示装置包括包括多个像素的像素区域，源极驱动器，第一栅极驱动器和第二栅极驱动器。多个像素中的每一个包括发光元件，用于控制输入到像素的视频信号的第一晶体管，用于控制发光元件的发射/不发光的第二晶体管。

87. 发明申请

US20050134325A1 Shift register and driving method thereof 失效
标题翻译：移位寄存器及其驱动方法
公开(公告)号：US20050134325A1
公开(公告)日：2005-06-23
申请号：US11057172
申请日：2005-02-15
申请人： Mitsuaki Osame , Aya Anzai
发明人： Mitsuaki Osame , Aya Anzai
IPC分类号： G11C19/00 , G11C19/18 , H03K5/003 , H03K5/02 , H03K5/08 , H03K5/24 , H03K5/22
CPC分类号： H03K5/249 , G11C19/00 , G11C19/184 , H03K5/003 , H03K5/02 , H03K5/082
摘要： A low power consumption shift register which inputs a CK signal with a low voltage with almost no effect of variation in characteristics of transistors. In the invention, an input portion of an inverter is set at a threshold voltage thereof and a CK signal is inputted to the input portion of the inverter through a capacitor means. In this manner, the CK signal is amplified, which is sent to the shift register. That is, by obtaining the threshold potential of the inverter, the shift register which operates with almost no effect of variation in characteristics of transistors can be provided. A level shifter of the CK signal is generated from an output pulse of the shift register, therefore, the low power consumption shift register having the level shifter which flows a shoot-through current for a short period can be provided
摘要翻译：低功耗移位寄存器，其输入具有低电压的CK信号，几乎不影响晶体管的特性变化。在本发明中，将逆变器的输入部设定为阈值电压，通过电容器装置将CK信号输入到逆变器的输入部。以这种方式，CK信号被放大，发送到移位寄存器。也就是说，通过获得反相器的阈值电位，可以提供几乎不影响晶体管特性变化的移位寄存器。从移位寄存器的输出脉冲产生CK信号的电平移位器，因此可以提供具有短时间流过直通电流的电平移位器的低功耗移位寄存器

88. 发明授权

US08570256B2 Device substrate, light emitting device and driving method of light emitting device 有权
标题翻译：装置基板，发光装置及发光装置的驱动方法
公开(公告)号：US08570256B2
公开(公告)日：2013-10-29
申请号：US13570478
申请日：2012-08-09
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30 , H01L21/70
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

89. 发明授权

US08432385B2 Clocked inverter, NAND, NOR and shift register 有权
标题翻译：时钟反相器，NAND，NOR和移位寄存器
公开(公告)号：US08432385B2
公开(公告)日：2013-04-30
申请号：US13271584
申请日：2011-10-12
申请人： Mitsuaki Osame , Aya Anzai
发明人： Mitsuaki Osame , Aya Anzai
IPC分类号： G09G5/00 , G09G3/20
CPC分类号： H03K19/018521 , G11C19/00 , G11C19/28 , H03K19/00384 , H03K19/0963
摘要： In a display device including a substrate, a pixel portion, and a driver circuit having first to ninth transistors and first and second inverters, the various transistors are configured such that one of a source and a drain of the fifth transistor is electrically connected to a gate of the first transistor. In embodiments, the electrical connection may be a direct connection. Additionally, a switch may be provided that is directly connected to an output terminal of the second inverter.
摘要翻译：在包括基板，像素部分和具有第一至第九晶体管和第一和第二反相器的驱动器电路的显示装置中，各种晶体管被配置为使得第五晶体管的源极和漏极中的一个电连接到第一晶体管的栅极。在实施例中，电连接可以是直接连接。另外，可以提供直接连接到第二反相器的输出端的开关。

90. 发明授权

US08212488B2 Element substrate and light emitting device 有权
标题翻译：元件基板和发光器件
公开(公告)号：US08212488B2
公开(公告)日：2012-07-03
申请号：US13184616
申请日：2011-07-18
申请人： Mitsuaki Osame , Aya Anzai , Yu Yamazaki
发明人： Mitsuaki Osame , Aya Anzai , Yu Yamazaki
IPC分类号： G09G5/00 , H05B37/02 , H05B37/00
CPC分类号： H01L27/326 , G09G3/2022 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2300/0885 , G09G2310/0251 , H01L27/283 , H01L29/78672 , H01L51/5012 , H01L51/5296
摘要： A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.
摘要翻译：一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量。根据本发明，使用耗尽型晶体管作为驱动晶体管。驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。

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