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    • 81. 发明授权
    • Resist top coat composition and patterning process
    • 抵抗面漆组合和图案化工艺
    • US08088537B2
    • 2012-01-03
    • US12320183
    • 2009-01-21
    • Jun HatakeyamaYuji Harada
    • Jun HatakeyamaYuji Harada
    • G03F7/26G03F7/11C08L33/02
    • G03F7/11G03F7/2041
    • The present invention relates to a resist top coat composition and a patterning process adopting such a material, which resist top coat composition is provided for forming a top coat on a photoresist film so as to protect the photoresist film, in liguid immersion photolithography. The present invention provides a resist top coat composition for forming a top coat on a photoresist film, wherein the resist top coat composition comprises, at least: a polymer I including a repeating unit a represented by the following general formula (1); and a polymer II including repeating unit having a sulfonic acid or an amine salt of a sulfonic acid:
    • 本发明涉及一种抗蚀剂面漆组合物和采用这种材料的图案化方法,其抗蚀面漆组合物用于在光致抗蚀剂膜上形成顶涂层以保护光致抗蚀剂膜,在液体浸渍光刻中。 本发明提供了一种用于在光致抗蚀剂膜上形成顶涂层的抗蚀剂面漆组合物,其中抗蚀剂面漆组合物至少包含:包含由以下通式(1)表示的重复单元的聚合物I; 和包含具有磺酸或磺酸胺盐的重复单元的聚合物II:
    • 84. 发明授权
    • Semiconductor memory device and method for manufacturing the same
    • 半导体存储器件及其制造方法
    • US07474548B2
    • 2009-01-06
    • US11637939
    • 2006-12-13
    • Yoshiya MoriyamaYuji HaradaKeita Takahashi
    • Yoshiya MoriyamaYuji HaradaKeita Takahashi
    • G11C5/06
    • H01L27/115H01L27/11521H01L27/11568
    • A semiconductor memory device includes: a memory cell array region formed in a semiconductor region of a first conductivity type and having a plurality of memory cells arranged in rows and columns; a plurality of word lines each of which collectively connects ones of the plurality of memory cells aligned in the same row; and a protective diode region formed in the semiconductor region to be separated from the memory cell array region. In the protective diode region, a protective diode element is constructed by making a junction between a first diffusion layer of a second conductivity type formed in the upper portion of the semiconductor region and the semiconductor region. Each of the word lines extends to the protective diode region and is brought into direct connection to the first diffusion layer of the second conductivity type, thereby making electrical connection to the protective diode element.
    • 半导体存储器件包括:存储单元阵列区域,形成在第一导电类型的半导体区域中,并具有以行和列排列的多个存储单元; 多个字线,其各自共同连接在同一行中排列的多个存储单元中的一个; 以及形成在半导体区域中以与存储单元阵列区域分离的保护二极管区域。 在保护二极管区域中,通过在半导体区域的上部形成的第二导电类型的第一扩散层与半导体区域之间形成接合来构成保护二极管元件。 每条字线延伸到保护二极管区,并与第二导电类型的第一扩散层直接连接,从而与保护二极管元件电连接。