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81. 发明申请

US20090278172A1 GaN based semiconductor element 有权
标题翻译： GaN基半导体元件
公开(公告)号：US20090278172A1
公开(公告)日：2009-11-12
申请号：US12382010
申请日：2009-03-05
申请人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Masatoshi Ikeda
发明人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Masatoshi Ikeda
IPC分类号： H01L29/205
CPC分类号： H01L29/0847 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.
摘要翻译：场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供应层（未掺杂的AlGaN层）依次叠置在蓝宝石衬底上的叠层结构。在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

82. 发明授权

US07602426B2 Digital camera and defect pixel compensation system 有权
标题翻译：数码相机和缺陷像素补偿系统
公开(公告)号：US07602426B2
公开(公告)日：2009-10-13
申请号：US11491148
申请日：2006-07-24
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： H04N9/64 , H04N5/225 , H04N3/14
CPC分类号： H04N5/3675 , H04N5/367
摘要： A digital camera is connected to a computer through a serial terminal. The computer is connected to a server through an internet. To the server, the digital camera transmits uncompensated image data to which no defect pixel compensation is applied, and defect pixel information preliminarily read from a nonvolatile memory. The server analyses this image data to compare with the defect pixel information, and then creates new defect pixel information. The new defect pixel information is transmitted to the digital camera, and additionally written to the nonvolatile memory. The digital camera compensates image data obtained by image capturing, based on the defect pixel information.
摘要翻译：数码相机通过串行端子连接到计算机。计算机通过互联网连接到服务器。对于服务器，数码相机发送未补偿的未补偿的图像数据，并且从非易失性存储器预先读取缺陷像素信息。服务器分析此图像数据与缺陷像素信息进行比较，然后创建新的缺陷像素信息。将新的缺陷像素信息发送到数字照相机，并另外写入非易失性存储器。数码相机根据缺陷像素信息补偿通过图像捕获获得的图像数据。

83. 发明申请

US20090140295A1 GaN-based semiconductor device and method of manufacturing the same 有权
标题翻译： GaN基半导体器件及其制造方法
公开(公告)号：US20090140295A1
公开(公告)日：2009-06-04
申请号：US12292164
申请日：2008-11-13
申请人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
发明人： Shusuke Kaya , Seikoh Yoshida , Sadahiro Kato , Takehiko Nomura , Nariaki Ikeda , Masayuki Iwami , Yoshihiro Sato , Hiroshi Kambayashi , Koh Li
IPC分类号： H01L29/737 , H01L21/28 , H01L21/265
CPC分类号： H01L29/7787 , H01L29/0611 , H01L29/2003 , H01L29/4175 , H01L29/66462
摘要： A GaN-based semiconductor device includes a silicon substrate; an active layer of a GaN-based semiconductor formed on the silicon substrate; a trench formed in the active layer and extending from a top surface of the active layer to the silicon substrate; a first electrode formed on an internal wall surface of the trench so that the first electrode extends from the top surface of the active layer to the silicon substrate; a second electrode formed on the active layer so that a current flows between the first electrode and the second electrode via the active layer; and a bottom electrode formed on a bottom surface of the silicon substrate. The first electrode is formed of a metal capable of being in ohmic contact with the silicon substrate and the active layer.
摘要翻译： GaN基半导体器件包括硅衬底; 形成在硅衬底上的GaN基半导体的有源层; 形成在有源层中并从有源层的顶表面延伸到硅衬底的沟槽; 形成在所述沟槽的内壁表面上的第一电极，使得所述第一电极从所述有源层的顶表面延伸到所述硅衬底; 形成在有源层上的第二电极，使得电流经由有源层在第一电极和第二电极之间流动; 以及形成在硅衬底的底表面上的底部电极。第一电极由能够与硅衬底和有源层欧姆接触的金属形成。

84. 发明申请

US20070247943A1 Magnetic memory device and method for reading the same 有权
标题翻译：磁记忆装置及其读取方法
公开(公告)号：US20070247943A1
公开(公告)日：2007-10-25
申请号：US11808967
申请日：2007-06-14
申请人： Yoshihiro Sato , Masaki Aoki
发明人： Yoshihiro Sato , Masaki Aoki
IPC分类号： G11C7/02
CPC分类号： G11C11/16
摘要： A magnetic memory device comprises a plurality of bit lines BL; memory cells MC disposed at the respective plurality of bit lines, and each including a magnetoresistive effect element MTJ whose resistance value is changed with changes of magnetization direction, and a select transistor Tr connected to the magnetoresistive effect element MTJ, the magnetoresistive effect element MC having one terminal connected to the bit line BL and the other terminal connected to a first signal line GND via the select transistor; dummy cells DC disposed at the respective plurality of bit lines BL, and each including a resistance element R of a constant resistance value, the resistance element having one terminal connected to the bit line BL and the other terminal connected to a second signal line SIGD; and a voltage sense amplifier SA connected to the plurality of bit lines BL.
摘要翻译：磁存储器件包括多个位线BL; 存储单元MC设置在相应的多个位线处，并且每个存储单元MC包括电阻值随着磁化方向的变化而变化的磁阻效应元件MTJ，以及连接到磁阻效应元件MTJ的选择晶体管Tr，磁阻效应元件MC具有一个端子连接到位线BL，另一个端子经由选择晶体管连接到第一信号线GND; 设置在相应的多个位线BL上的虚设单元DC，并且每个包括具有恒定电阻值的电阻元件R，该电阻元件具有连接到位线BL的一个端子和连接到第二信号线SIG < SUB> D 以及连接到多个位线BL的电压检测放大器SA。

85. 发明申请

US20050002431A1 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050002431A1
公开(公告)日：2005-01-06
申请号：US10867731
申请日：2004-06-16
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01S5/22 , H01S5/227 , H01S5/323 , H01S5/00
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

86. 发明授权

US06768759B2 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06768759B2
公开(公告)日：2004-07-27
申请号：US09997306
申请日：2001-11-28
申请人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
发明人： Yukio Honkawa , Takahiro Ono , Satoshi Hattori , Yoshihiro Sato
IPC分类号： H01S522
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01S5/2206 , H01S5/2222 , H01S5/2223 , H01S5/227 , H01S5/2275 , H01S5/32308 , H01S2304/04
摘要： A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility.
摘要翻译：一种掩埋半导体激光器件的制造方法，包括以下步骤：形成包括覆盖在n型半导体衬底上的底部包层，有源层和顶部覆层的台面结构; 并且通过在台面结构的每个侧表面上和从每个侧表面延伸的裙部上生长p型电流阻挡层和n型电流阻挡层来形成电流限制结构，p型电流阻挡层通过使用含有III族元素气体和V族元素气体的原料气体，其摩尔比在60和350（含）之间。在该方法中，可以以优异的再现性制造包括具有规定的漏电流路径宽度的电流限制结构的半导体激光装置。

87. 发明授权

US06664044B1 Method for conducting PCR protected from evaporation 有权
标题翻译：进行PCR保护免于蒸发的方法
公开(公告)号：US06664044B1
公开(公告)日：2003-12-16
申请号：US09242561
申请日：1999-02-19
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： C12Q168
CPC分类号： B01L3/0268 , B01J19/0046 , B01J2219/00378 , B01J2219/00527 , B01J2219/00605 , B01J2219/00659 , B01L3/0241 , B01L3/50851 , B01L3/5088 , B01L2200/142 , C40B60/14 , G01N2035/00079 , G01N2035/00277
摘要： In a PCR reaction, an extremely minute amount of a solution introduced by an ink-jet method is retained on a substrate for a long period of time without evaporation. On a substrate, a layer of liquid, that is hardly miscible with an extremely minute amount of a solution (minute droplet) intended to be retained, is formed. In the liquid layer, a minute droplet is held in contact with a surface of the substrate. If the minute droplet is aqueous, the liquid layer coated over the surface of the substrate may be oily.
摘要翻译：在PCR反应中，通过喷墨法引入的极微量的溶液长时间保持在基板上而不蒸发。在基板上形成与极微量的待保留的溶液（微小液滴）几乎不混溶的液体层。在液体层中，微滴保持与基板的表面接触。如果微滴是水性的，涂覆在基材表面上的液体层可以是油性的。

88. 发明授权

US06284462B1 Probes and methods for polynucleotide detection 失效
标题翻译：探针和多核苷酸检测方法
公开(公告)号：US06284462B1
公开(公告)日：2001-09-04
申请号：US09091332
申请日：1998-06-16
申请人： Yoshihiro Sato , Akihiko Tsuji , Takayuki Suga
发明人： Yoshihiro Sato , Akihiko Tsuji , Takayuki Suga
IPC分类号： C12Q168
CPC分类号： C12Q1/6818
摘要： Detection probes and a method of detection for the detection of a specimen having a specified sequence in a sample are disclosed that utilize two fluorophore-labeled (donor and acceptor) probes which are designed to display changes in a fluorescence decay curve by their hybridization to the specific sequence of a specimen, thus allowing for the detection with great accuracy and high sensitivity, particularly under the conditions where the probes may be abundant relative to the specimen in the sample.
摘要翻译：公开了检测探针和用于检测样品中具有特定序列的样品的检测方法，其利用两个荧光团标记的（供体和受体）探针，其设计为通过与荧光标记的杂交显示荧光衰减曲线的变化因此，特别是在探针相对于样品中样品可能丰富的条件下，能够以高精度和高灵敏度进行检测。

89. 发明授权

US06225056B1 Solid phases for target nucleic acid detection, process for production thereof, and method of target nucleic acid detection 失效
标题翻译：用于靶核酸检测的固相，其制备方法和靶核酸检测方法
公开(公告)号：US06225056B1
公开(公告)日：2001-05-01
申请号：US09065058
申请日：1998-04-27
申请人： Satoshi Abe , Yoshihiro Sato
发明人： Satoshi Abe , Yoshihiro Sato
IPC分类号： C12Q168
CPC分类号： C12Q1/6834 , C12Q2537/143 , C12Q2533/107 , C12Q2525/307
摘要： A solid phase comprising at least one pair of probes which are capable of sequentially hybridizing with a particular target nucleic acid sequence is provided. The probe pair(s) are immobilized on the solid phase through a linker portion wherein they occupy a restricted spatial arrangement such that they can be ligated by an enzyme when the they sequentially hybridize to a selected target sequence. In addition a method wherein the solid phase is utilized to detection a target nucleic acid is disclosed.
摘要翻译：提供了包含能够与特定靶核酸序列顺序杂交的至少一对探针的固相。探针对通过接头部分固定在固相上，其中它们占据受限制的空间排列，使得当它们顺序地与选定的靶序列杂交时，它们可以被酶连接。另外还公开了使用固相检测目标核酸的方法。

90. 发明授权

US06198715B1 Disc device having disc in balance correcting arrangements 失效
标题翻译：具有盘平衡校正装置的盘装置
公开(公告)号：US06198715B1
公开(公告)日：2001-03-06
申请号：US08932363
申请日：1997-09-17
申请人： Takashi Kouno , Yoshihiro Sato , Yoshiaki Yamauchi , Shozo Saegusa , Shigeki Mori , Shinobu Yoshida , Hisahiro Miki , Kuniyuki Kimura
发明人： Takashi Kouno , Yoshihiro Sato , Yoshiaki Yamauchi , Shozo Saegusa , Shigeki Mori , Shinobu Yoshida , Hisahiro Miki , Kuniyuki Kimura
IPC分类号： G11B3308
CPC分类号： F16F15/363 , G11B19/2009 , G11B19/2027 , G11B33/08
摘要： A disc device which includes a rotary drive mechanism for rotating a replaceable recording medium. An unbalance correcting mechanism adapted to correct unbalance is incorporated in a rotary body rotating unit in the rotary drive mechanism, and includes a holding system having a holding member for holding the rotary drive mechanism and a head having at least a reproducing function. Further included is a support member composed of resilient members, for supporting a casing and a unit holder to each other. The holding system has a natural frequency higher than 30 Hz but lower than 70 Hz, and exhibits a transmission characteristic having a lift-up degree of higher than 8 dB at a resonant point.
摘要翻译：一种盘装置，包括用于旋转可替换记录介质的旋转驱动机构。适于校正不平衡的不平衡校正机构结合在旋转驱动机构中的旋转体旋转单元中，并且包括具有用于保持旋转驱动机构的保持构件和至少具有再现功能的头部的保持系统。还包括由弹性构件构成的支撑构件，用于将壳体和单元保持器彼此支撑。保持系统具有高于30Hz但低于70Hz的固有频率，并且在谐振点具有高于8dB的升高度的传输特性。

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