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81. 发明申请

US20060255350A1 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US20060255350A1
公开(公告)日：2006-11-16
申请号：US11491261
申请日：2006-07-24
申请人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
发明人： Hisashi Nakayama , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L29/2003 , H01L29/32 , H01L29/66462 , H01L29/802 , H01L33/007
摘要： A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.

82. 发明申请

US20060245459A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20060245459A1
公开(公告)日：2006-11-02
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

83. 发明申请

US20060244003A1 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US20060244003A1
公开(公告)日：2006-11-02
申请号：US11410920
申请日：2006-04-26
申请人： Tetsuzo Ueda , Satoshi Nakazawa , Daisuke Ueda , Toshiyuki Takizawa
发明人： Tetsuzo Ueda , Satoshi Nakazawa , Daisuke Ueda , Toshiyuki Takizawa
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/035236 , H01L31/1035 , H01L33/06 , H01S5/322 , H01S5/34333 , Y02E10/544
摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。

84. 发明申请

US20060203871A1 Nitride semiconductor light emitting device and fabrication method thereof 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060203871A1
公开(公告)日：2006-09-14
申请号：US11371249
申请日：2006-03-09
申请人： Tetsuzo Ueda , Satoshi Nakazawa , Toshiyuki Takizawa
发明人： Tetsuzo Ueda , Satoshi Nakazawa , Toshiyuki Takizawa
IPC分类号： H01S5/00
CPC分类号： H01S5/32341
摘要： A nitride semiconductor light emitting device includes: an active layer formed of a first III-V nitride semiconductor, the active layer having opposite surfaces which face each other; an alloy crystal layer formed of InxAlyGa1-x-yN (0
摘要翻译：氮化物半导体发光器件包括：由第一III-V族氮化物半导体形成的有源层，所述有源层具有彼此相对的相对表面; 由Al x Al 2 O 3（0

85. 发明申请

US20060157804A1 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060157804A1
公开(公告)日：2006-07-20
申请号：US11287482
申请日：2005-11-28
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L29/76
CPC分类号： H01L29/8122 , H01L29/2003 , H01L29/66856
摘要： A first SiO2 thin film, a tungsten gate electrode, and a second SiO2 thin film are selectively formed on a first n+-type GaN contact semiconductor layer in that order and in a multilayer film structure having the three layers, a stripe-shaped opening is formed. Via the opening, an undoped GaN channel semiconductor layer and the second n+-type GaN contact semiconductor layer are formed so that both the layers are regrown by, for example, metal organic chemical vapor deposition. A source electrode and a drain electrode are formed so as to contact the corresponding second and first n+-type GaN contact semiconductor layers. The regrown undoped GaN channel semiconductor layer and the regrown second n+-type GaN contact semiconductor layer are horizontally grown portions and hence, the contact area of the electrode can be made larger than the area of the opening.
摘要翻译：第一个SiO 2薄膜，钨栅电极和第二SiO 2薄膜选择性地形成在第一n + + / GaN接触半导体层，并且在具有三层的多层膜结构中形成条形开口。通过开口，形成未掺杂的GaN沟道半导体层和第二n + + + GaN接触半导体层，使得这两个层通过例如金属有机化学气相沉积而再生长。源电极和漏电极形成为与相应的第二和第n + +型GaN接触半导体层接触。再生未掺杂的GaN沟道半导体层和再生长的第二n + + + GaN接触半导体层是水平生长的部分，因此可以使电极的接触面积大于开口的面积。

86. 发明申请

US20060124962A1 Field effect transistor and method for fabricating the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060124962A1
公开(公告)日：2006-06-15
申请号：US11297386
申请日：2005-12-09
申请人： Tetsuzo Ueda , Hidetoshi Ishida , Tsuyoshi Tanaka
发明人： Tetsuzo Ueda , Hidetoshi Ishida , Tsuyoshi Tanaka
IPC分类号： H01L31/0328
CPC分类号： H01L21/28581 , H01L29/0843 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer. A source electrode and a drain electrode are formed on the second semiconductor layer to be spaced from each other. An opening having an insulating film on its inner wall is formed in a portion of the second semiconductor layer sandwiched between the source electrode and the drain electrode so as to expose the first semiconductor layer therein. A gate electrode is formed in the opening to be in contact with the insulating film and the first semiconductor layer on the bottom of the opening.
摘要翻译：场效应晶体管包括由多个半导体膜的多层构成的第一半导体层和形成在第一半导体层上的第二半导体层。源电极和漏电极形成在第二半导体层上以彼此间隔开。在夹在源电极和漏极之间的第二半导体层的一部分中形成有在其内壁上具有绝缘膜的开口，以便在其中露出第一半导体层。在开口部形成有与绝缘膜和开口底部的第一半导体层接触的栅电极。

87. 发明申请

US20060056473A1 Semiconductor light emitting element and method for fabricating the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20060056473A1
公开(公告)日：2006-03-16
申请号：US11195625
申请日：2005-08-03
申请人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
发明人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18347 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S2301/166 , H01S2301/176
摘要： A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.
摘要翻译：表面发射激光元件包括形成为具有凸形横截面的半导体多层膜的台面结构。无机材料的第一绝缘膜形成在台面结构的侧面上，在第一绝缘膜上形成树脂层以填充台面结构周围的空间。在树脂层上形成无机材料的第二绝缘膜，在第二绝缘膜和台面结构上形成具有露出台面结构的顶面部分的电极开口的上接触电极。利用这种结构，可以抑制元件制造过程中的树脂层的氧化和改变，以便不产生间隙而埋入台面结构。因此，可以提供高可靠性的半导体发光元件。

88. 发明申请

US20060038191A1 Semiconductor light emitting device 失效
公开(公告)号：US20060038191A1
公开(公告)日：2006-02-23
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

89. 发明申请

US20050280022A1 Semiconductor laser device and manufacturing method thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20050280022A1
公开(公告)日：2005-12-22
申请号：US11154807
申请日：2005-06-17
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L29/24 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0422 , H01S5/0655 , H01S5/2009 , H01S5/2206 , H01S5/2218 , H01S5/2232 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.
摘要翻译：本发明旨在提供一种具有低阈值电流的长寿命半导体激光器件，并且可用于使用氮化物半导体层的蓝紫色半导体激光器件中的高输出操作。在半导体激光器件中，在GaN衬底1上依次形成以下的层：n型GaN层2; n型AlGaN包覆层3，第一n型GaN引导层4，和p型AlGaN阻挡层6（电流阻挡层），另外在p型AlGaN阻挡层6的一部分上形成条状开口，形成第二n型GaN引导层5以覆盖开口并且在第二n型GaN引导层5上依次形成以下层：InGaN多量子阱有源层7; 未掺杂的GaN引导层8; p型AlGaN电子溢出抑制层9，p型AlGaN包覆层10和p型GaN接触层11。

90. 发明授权

US06919641B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06919641B2
公开(公告)日：2005-07-19
申请号：US10462744
申请日：2003-06-17
申请人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/022 , H01L25/075 , H01S5/02 , H01S5/40 , H01L23/52
CPC分类号： H01L24/95 , H01L25/0753 , H01L2224/95085 , H01L2224/95146 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01033 , H01L2924/01049 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/15165 , H01S5/02252 , H01S5/4031 , H01L2924/15153 , H01L2924/00
摘要： A semiconductor device includes: a substrate having in its principal surface first and second recessed portions formed adjacent to each other; and first and second semiconductor laser chips each having a portion that is inserted in one of the recessed portions. The depth of the recessed portions is smaller than the height of the first and second semiconductor laser chips that are disposed in the recessed portions.
摘要翻译：半导体器件包括：基板，其主表面具有彼此相邻形成的第一和第二凹部; 以及第一和第二半导体激光器芯片，每个半导体激光器芯片具有插入到一个凹部中的一部分。凹部的深度小于设置在凹部中的第一和第二半导体激光器芯片的高度。

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