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81. 发明授权

US07961506B2 Multiple memory cells with rectifying device 有权
标题翻译：具有整流装置的多个存储单元
公开(公告)号：US07961506B2
公开(公告)日：2011-06-14
申请号：US12026195
申请日：2008-02-05
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , C07D213/81 , C07D401/06 , C07D401/12 , C07D401/14 , G11C5/025 , G11C5/063 , G11C13/0023 , G11C13/003 , G11C2213/72 , G11C2213/74 , G11C2213/78 , G11C2213/79 , H01L27/1021
摘要： Memory devices and methods described are shown that provide improvements, including improved cell isolation for operations such as read and write. Further, methods and devices for addressing and accessing cells are shown that provide a simple and efficient way to manage devices with multiple cells associated with each access transistor. Examples of multiple cell devices include phase change memory devices with multiple cells associated with each access transistor.
摘要翻译：显示了所描述的存储器件和方法，其提供了改进，包括改进的诸如读取和写入等操作的单元隔离。此外，示出了用于寻址和访问单元的方法和设备，其提供用于管理具有与每个存取晶体管相关联的多个单元的器件的简单且有效的方式。多个单元设备的示例包括具有与每个存取晶体管相关联的多个单元的相变存储器件。

82. 发明申请

US20110103129A1 VARIABLE-RESISTANCE MATERIAL MEMORIES, PROCESSES OF FORMING SAME, AND METHODS OF USING SAME 有权
标题翻译：可变电阻材料，其形成方法和使用方法
公开(公告)号：US20110103129A1
公开(公告)日：2011-05-05
申请号：US12986717
申请日：2011-01-07
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： G11C11/00 , H01L21/02
CPC分类号： H01L21/8239 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/75 , H01L27/101 , H01L27/1052 , H01L27/24
摘要： A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells can be arranged in parallel with a corresponding series of control gates. A select gate can also be disposed in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell can include turning off the corresponding control gate, while turning on all other control gates. Various devices can include such a variable-resistance material memory array.
摘要翻译：可变电阻材料存储器阵列包括一系列可变电阻材料存储单元。一系列可变电阻材料存储单元可以与相应的一系列控制栅极并联布置。选择栅极也可以与可变电阻材料存储单元串联布置。对给定的可变电阻材料存储单元的写入/读取/擦除可以包括在打开所有其它控制栅极的同时关闭对应的控制栅极。各种装置可以包括这种可变电阻材料存储器阵列。

83. 发明申请

US20110095256A1 Memory Cells 有权
标题翻译：记忆细胞
公开(公告)号：US20110095256A1
公开(公告)日：2011-04-28
申请号：US12983757
申请日：2011-01-03
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： H01L47/00
CPC分类号： H01L27/115 , B60G11/27 , B60G21/067 , B60G21/073 , B60G2500/202 , B60G2800/01 , G11C11/5678 , G11C13/0004 , G11C16/0475 , G11C2213/53 , G11C2213/71 , H01L29/1033 , H01L29/685
摘要： In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change material adjacent the drain region. In some embodiments, the phase change material may be adjacent both the source region and the drain region. Some embodiments include methods of programming a memory cell that has phase change material adjacent a drain region. An inversion layer is formed within the channel region adjacent the gate dielectric, with the inversion layer having a pinch-off region within the phase change material adjacent the drain region. Hot carriers (for instance, electrons) within the pinch-off region are utilized to change a phase within the phase change material.
摘要翻译：在一些实施例中，存储器单元包括通过栅极电介质与沟道区间隔开的晶体管栅极; 在沟道区一侧的源区; 以及在源极区域的沟道区域的相对侧上的漏极区域。沟道区域具有与漏极区域相邻的相变材料。在一些实施例中，相变材料可以与源极区域和漏极区域相邻。一些实施例包括编程具有与漏极区相邻的相变材料的存储单元的方法。在邻近栅极电介质的沟道区域内形成反型层，反型层在相变材料内具有与漏极区相邻的夹断区域。使用夹断区域内的热载体（例如电子）来改变相变材料内的相位。

84. 发明申请

US20110068313A1 MEMORY DEVICES WITH ENHANCED ISOLATION OF MEMORY CELLS, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME 有权
标题翻译：具有增强的记忆体分离的记忆装置，包括其的系统及其形成方法
公开(公告)号：US20110068313A1
公开(公告)日：2011-03-24
申请号：US12563277
申请日：2009-09-21
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： H01L45/00 , H01L21/77 , H01L27/04
CPC分类号： H01L45/1675 , G11C13/0004 , G11C13/0007 , H01L27/101 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1273 , H01L45/1293 , H01L45/144
摘要： Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device.
摘要翻译：包括可变电阻材料的存储器件的存储单元在存储单元之间具有空腔。电子系统包括这样的存储器件。形成存储器件的方法包括在存储器件的存储器单元之间提供空腔。

85. 发明申请

US20110062409A1 PHASE CHANGE MEMORY STRUCTURE WITH MULTIPLE RESISTANCE STATES AND METHODS OF PROGRAMMING AND SENSING 有权
标题翻译：具有多种电阻状态的相变记忆结构及编程和感测方法
公开(公告)号：US20110062409A1
公开(公告)日：2011-03-17
申请号：US12949844
申请日：2010-11-19
申请人： Jun Liu , Mike Violette
发明人： Jun Liu , Mike Violette
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C2211/5631 , G11C2211/5632 , G11C2211/5634 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/165 , H01L45/1675 , Y10S977/754
摘要： A phase change memory structure with multiple resistance states and methods of forming, programming, and sensing the same. The memory structure includes two or more phrase change elements provided between electrodes. Each phase change element has a respective resistance curve as a function of programming voltage which is shifted relative to the resistance curves of other phase change elements. In one example structure using two phase change elements, the memory structure is capable of switching among four resistance states.
摘要翻译：具有多个电阻状态的相变存储器结构及其形成，编程和感测方法。存储器结构包括在电极之间提供的两个或更多个短语改变元件。每个相变元件具有作为编程电压的函数的相应电阻曲线，其相对于其它相变元件的电阻曲线偏移。在使用两个相变元件的一个示例结构中，存储器结构能够在四个电阻状态之间切换。

86. 发明申请

US20110058406A1 RESISTIVE MEMORY 有权
标题翻译：电阻记忆
公开(公告)号：US20110058406A1
公开(公告)日：2011-03-10
申请号：US12946596
申请日：2010-11-15
申请人： Yantao Ma , Jun Liu
发明人： Yantao Ma , Jun Liu
IPC分类号： G11C11/21 , G11C11/02 , G11C11/16
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/1697 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C13/0016 , G11C13/0038 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2213/31 , G11C2213/32
摘要： The present disclosure includes resistive memory devices and systems having resistive memory cells, as well as methods for operating the resistive memory cells. One memory device embodiment includes at least one resistive memory element, a programming circuit, and a sensing circuit. For example, the programming circuit can include a switch configured to select one of N programming currents for programming the at least one resistive memory element, where each of the N programming currents has a unique combination of current direction and magnitude, with N corresponding to the number of resistance states of the at least one memory element. In one or more embodiments, the sensing circuit can be arranged for sensing of the N resistance states.
摘要翻译：本公开包括具有电阻存储器单元的电阻式存储器件和系统，以及用于操作电阻存储器单元的方法。一个存储器件实施例包括至少一个电阻存储器元件，编程电路和感测电路。例如，编程电路可以包括被配置为选择N个编程电流之一以用于编程至少一个电阻性存储器元件的开关，其中N个编程电流中的每一个具有电流方向和幅度的唯一组合，N对应于至少一个存储元件的电阻状态数。在一个或多个实施例中，感测电路可被布置用于感测N电阻状态。

87. 发明授权

US07876603B2 Spin current generator for STT-MRAM or other spintronics applications 有权
标题翻译：用于STT-MRAM或其他自旋电子学应用的自旋电流发生器
公开(公告)号：US07876603B2
公开(公告)日：2011-01-25
申请号：US12242228
申请日：2008-09-30
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/16 , H01F10/3218 , Y10S977/934
摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
摘要翻译：自旋电流发生器和采用自旋电流发生器的系统和方法。自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

88. 发明授权

US07858468B2 Memory devices and formation methods 有权
标题翻译：记忆装置和形成方法
公开(公告)号：US07858468B2
公开(公告)日：2010-12-28
申请号：US12261948
申请日：2008-10-30
申请人： Jun Liu , Gurtej S. Sandhu
发明人： Jun Liu , Gurtej S. Sandhu
IPC分类号： H01L21/8239
CPC分类号： H01L21/02225 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is bonded to the insulator material and at least some of the substrate is removed where bonded to the insulator material. After the removing, a memory cell is formed having a word line, an access diode, a state-changeable memory element containing chalcogenide phase change material, and a bit line all electrically connected in series, the access diode containing the junction as a p-n junction. A memory device includes an adhesion material over the insulator material and bonding the word line to the insulator material.
摘要翻译：一种方法包括在具有含金属的导电互连的集成电路上形成电绝缘体材料，并激活衬底的半导体材料中的掺杂剂以提供掺杂区域。掺杂区域提供相反导电类型的结。在激活掺杂剂之后，衬底被结合到绝缘体材料上，并且至少部分衬底在与绝缘体材料接合的情况下被去除。在移除之后，形成具有字线，存取二极管，含有硫族化物相变材料的状态可变存储元件和全部电连接的位线的存储单元，该存储二极管包含该结作为pn结。存储器件包括绝缘体材料上的粘合材料并将字线连接到绝缘体材料上。

89. 发明申请

US20100313260A1 METHOD AND SYSTEM OF PROVIDING FIREWALL IN HANDSET 审中-公开
标题翻译：方法和系统中提供防火墙
公开(公告)号：US20100313260A1
公开(公告)日：2010-12-09
申请号：US12548116
申请日：2009-08-26
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： G06F15/16 , H04M3/42
CPC分类号： H04M1/663
摘要： A method of providing firewall in handset is disclosed. The method includes receiving a request with a telephone number by a handset. The handset determines if the telephone number meets a refusing condition. The refusing condition includes a telephone number interval with at least one number and a symbolic variable. The handset refuses the request of the telephone number if the telephone number meets the refusing condition.
摘要翻译：公开了一种在手机中提供防火墙的方法。该方法包括用手机接收电话号码的请求。手机确定电话号码是否符合拒绝条件。拒绝条件包括具有至少一个号码和符号变量的电话号码间隔。如果电话号码符合拒绝条件，手机拒绝电话号码的请求。

90. 发明申请

US20100283030A1 MEMORY DEVICES AND METHODS OF FORMING THE SAME 有权
标题翻译：记忆装置及其形成方法
公开(公告)号：US20100283030A1
公开(公告)日：2010-11-11
申请号：US12840839
申请日：2010-07-21
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1683
摘要： Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.
摘要翻译：具有多个存储单元的存储器件，每个存储单元包括具有横向收缩部分的相变材料。相邻存储单元的横向收缩部分垂直偏移并且位于存储器件的相对侧上。还公开了具有多个存储单元的存储器件，每个存储器单元包括具有不同宽度的第一和第二电极。相邻存储器单元具有在存储器件的垂直相对侧上偏移的第一和第二电极。还公开了形成存储器件的方法。

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