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81. 发明申请

US20050040423A1 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 有权
标题翻译：发光元件及其制造方法以及具有发光元件的半导体器件
公开(公告)号：US20050040423A1
公开(公告)日：2005-02-24
申请号：US10947631
申请日：2004-09-22
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L21/28 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/40 , H01L27/15
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circumflex over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circumflex over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circumflex over (3)} an Al layer as a high-reflection electrode, {circumflex over (4)} a Ti layer having a barrier function, and {circumflex over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
摘要翻译：在蓝宝石衬底上形成InGaN有源层。在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括1个用于与p-GaN层形成欧姆接触的Ni层，2是具有阻止杂质扩散的阻挡功能的Mo层，3作为高反射电极的Al层，4是Ti 具有阻挡功能的层，以及用于改善与引线框架上的基座的接触的Au层。具有该五层结构的p侧电极同时实现欧姆接触和高反射率。

82. 发明申请

US20050035363A1 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 有权
公开(公告)号：US20050035363A1
公开(公告)日：2005-02-17
申请号：US10946668
申请日：2004-09-22
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L21/28 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

83. 发明授权

US06828593B2 Semiconductor light emitting element and its manufacturing method 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06828593B2
公开(公告)日：2004-12-07
申请号：US10125289
申请日：2002-04-18
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01S5/32341
摘要： When a plurality of semiconductor layers including a nitride compound layer containing indium are stacked on a substrate, materials of layers above the indium containing nitride compound layer are limited to specific compounds, or their growth temperatures are limited within a predetermined range, to suppress thermal deterioration of the nitride compound layer containing indium or deterioration of the interface and to thereby grow a high-quality semiconductor light emitting element using nitride compound semiconductors. When manufacturing a nitride compound semiconductor light emitting element having a first layer made of a first nitride compound semiconductor containing indium and a second layer stacked on the first layer, conditions for stacking the second layer are selected those inside a closed region defined by connecting points plotted at x and y coordinates (364, 600), (364, 1010), (550, 1010), (650, 600) and (364, 600) on a graph taking emission wavelengths based on band-to-band transition of the first layer in nanometer on the x axis and taking growth temperatures of the second layer in ° C. on the y axis. Thus, a high-performance light emitting element can be made without inviting thermal deterioration of the first layer.
摘要翻译：当包含含有铟的氮化物化合物层的多个半导体层堆叠在基板上时，含铟氮化物层以上的层的材料被限制在特定化合物上，或者它们的生长温度被限制在预定范围内，以抑制热劣化的含有铟的氮化物化合物层或界面的劣化，从而使用氮化物半导体生长高品质的半导体发光元件。当制造具有由包含铟的第一氮化物化合物半导体制成的第一层的氮化物半导体发光元件和堆叠在第一层上的第二层时，选择堆叠第二层的条件是在由连接点绘制的闭合区域内的条件在图形上的x和y坐标（364,600），（364,1010），（550,1010），（650,600）和（364,600）上，取图表示基于波段的带 - 带转换的发射波长在x轴上以纳米为单位的第一层，并且在y轴上以°C取第二层的生长温度。因此，可以在不引起第一层的热劣化的情况下制造高性能的发光元件。

84. 发明授权

US06825502B2 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 有权
标题翻译：发光元件及其制造方法以及具有发光元件的半导体器件
公开(公告)号：US06825502B2
公开(公告)日：2004-11-30
申请号：US10417873
申请日：2003-04-17
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
摘要翻译：在蓝宝石衬底上形成InGaN有源层。在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有阻止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极五层结构同时实现欧姆接触和高反射率。

85. 发明授权

US06693307B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US06693307B2
公开(公告)日：2004-02-17
申请号：US10012106
申请日：2001-11-02
申请人： Hideto Sugawara , Koichi Nitta
发明人： Hideto Sugawara , Koichi Nitta
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/30
摘要： In a light emitting element using nitride compound semiconductors, an active layer made of a mixed crystal containing In additionally contains at least Al or B as a component of the mixed crystal to improve the thermal resistance of the crystal and the reliability of the element characteristics. Thus, the semiconductor light emitting element has a sufficient lifetime and permits the emission wavelength to be freely selected from a wider wavelength range including blue, green and orange.
摘要翻译：在使用氮化物化合物半导体的发光元件中，含有In的混合晶体的有源层至少包含Al或B作为混晶的成分，以提高晶体的热阻和元件特性的可靠性。因此，半导体发光元件具有足够的寿命，并且可以从包括蓝色，绿色和橙色的较宽波长范围自由地选择发射波长。

86. 发明授权

US06548834B2 Semiconductor light emitting element 失效
公开(公告)号：US06548834B2
公开(公告)日：2003-04-15
申请号：US10057283
申请日：2002-01-25
申请人： Hideto Sugawara , Koichi Nitta , Ryo Saeki , Katsufumi Kondo , Masanobu Iwamoto
发明人： Hideto Sugawara , Koichi Nitta , Ryo Saeki , Katsufumi Kondo , Masanobu Iwamoto
IPC分类号： H01L3300
CPC分类号： H01L33/08 , H01L27/15
摘要： A semiconductor light emitting element is proposed that improves a light extraction efficiency without requiring any complicated processes and techniques. The semiconductor light emitting element includes an active layer for emitting first light by current injection, and a light absorbing and emitting section for absorbing a part of the first light and for emitting second light having a greater peak wavelength than the first light. A difference in peak wavelength between the first light and the second light is in a range in which a spectrum of a mixture of the first and second light maintains a unimodal characteristic or is smaller than 0.9 times a half width of the spectrum of the first light.

87. 发明授权

US06320207B1 Light emitting device having flat growth GaN layer 失效
标题翻译：具有平坦生长GaN层的发光器件
公开(公告)号：US06320207B1
公开(公告)日：2001-11-20
申请号：US08844616
申请日：1997-04-21
申请人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
发明人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
IPC分类号： H01L3300
CPC分类号： H01L33/325 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A light emitting device has an N-type gallium nitride system compound semiconductor layer provided on a substrate; and a P-type gallium nitride system compound semiconductor layer provided on said N-type gallium nitride system compound semiconductor layer. The N-type gallium nitride compound semiconductor layer has such an area that an impurity concentration increases corresponding to a layer thickness from the side of said substrate.
摘要翻译：发光器件具有设置在基板上的N型氮化镓系化合物半导体层; 以及设置在所述N型氮化镓系化合物半导体层上的P型氮化镓系化合物半导体层。 N型氮化镓系化合物半导体层具有从基板一侧的层厚度的杂质浓度增加的面积。

88. 发明授权

US06221684B1 GaN based optoelectronic device and method for manufacturing the same 失效
标题翻译： GaN基光电子器件及其制造方法
公开(公告)号：US06221684B1
公开(公告)日：2001-04-24
申请号：US09457331
申请日：1999-12-09
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L2100
CPC分类号： H01S5/32 , H01L33/04 , H01L33/145 , H01L33/20 , H01L33/32 , H01L33/325 , H01L33/42
摘要： An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1−u−vN (0
摘要翻译：在p型覆盖层的顶表面上形成n盖层，p型覆盖层是具有用于将载流子发射到GaN基光的发光区域的pn结的层叠结构的顶层从而增加p型覆层中受主杂质的活化率。 n帽层也用作电流阻挡层，从而构成电流阻挡结构。 n帽层应优选由厚度为1.0微米以上的InuAlvGa1-u-vN（0

89. 发明授权

US6017807A P-type GaN compound semiconductor and method for manufacturing the same 失效
标题翻译： P型GaN化合物半导体及其制造方法
公开(公告)号：US6017807A
公开(公告)日：2000-01-25
申请号：US60068
申请日：1998-04-15
申请人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
发明人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
IPC分类号： H01L21/205 , H01L33/06 , H01L33/32 , H01L33/36 , H01L31/18
CPC分类号： H01L33/325 , H01L33/007
摘要： After p-type gallium nitride compound semiconductor layers, to which p-type impurity is added, are formed by virtue of chemical vapor deposition, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. while supplying a flow of an inert gas in parallel to a substrate surface at a predetermined flow rate or more. Otherwise, the p-type gallium nitride compound semiconductor layers are thermally annealed at more than 400.degree. C. or more than 700.degree. C. in an inert gas atmosphere having a predetermined pressure or more. According to the annealing process, the p-type impurity can be more effectively activated, so that p-type gallium nitride compound semiconductor layers which have fewer crystal defects, etc. and have lower resistivity can be formed.
摘要翻译：在通过化学气相沉积形成p型杂质的p型氮化镓化合物半导体层之后，p型氮化镓系化合物半导体层在400℃以上热退火，同时以预定的流速或更多的流量平行于衬底表面供应惰性气体流。否则，在具有预定压力或更大压力的惰性气体气氛中，p型氮化镓化合物半导体层在大于400℃或高于700℃下热退火。根据退火处理，可以更有效地激活p型杂质，从而可以形成具有较少的晶体缺陷等并且具有较低电阻率的p型氮化镓化合物半导体层。

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