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81. 发明授权

US07868415B2 Integrated circuit with an active area line having at least one form-supporting element and corresponding method of making an integrated circuit 有权
标题翻译：具有至少一个形式支撑元件的有源面积线的集成电路和制造集成电路的对应方法
公开(公告)号：US07868415B2
公开(公告)日：2011-01-11
申请号：US12177930
申请日：2008-07-23
申请人： Josef Willer , Michael Specht , Christoph Friederich , Doris Keitel-Schulz
发明人： Josef Willer , Michael Specht , Christoph Friederich , Doris Keitel-Schulz
IPC分类号： H01L23/58
CPC分类号： H01L21/28273 , H01L21/3086 , H01L21/32139 , H01L27/0207 , H01L27/11519 , H01L27/11521 , H01L29/66825 , H01L29/7881
摘要： An integrated circuit is described. The integrated circuit may have: an active area line formed of a material of a semiconductor substrate with a first longitudinal direction parallel to an upper surface of the semiconductor substrate; wherein the active area line has at least one form-supporting element extending in a second longitudinal direction parallel to the upper surface of the semiconductor substrate; and wherein the second longitudinal direction is arranged with regard to the first longitudinal direction in an angle unequal to 0 degree and unequal to 180 degree.
摘要翻译：描述了集成电路。集成电路可以具有：由具有与半导体衬底的上表面平行的第一纵向方向的半导体衬底的材料形成的有源区线; 其中所述有源面积线具有至少一个形状支撑元件，所述支撑元件在平行于所述半导体衬底的上表面的第二纵向方向上延伸; 并且其中所述第二纵向方向相对于所述第一纵向方向以不等于0度并且不等于180度的角度布置。

82. 发明申请

US20080285344A1 Integrated Circuits; Methods for Manufacturing an Integrated Circuit; Memory Modules; Computing Systems 有权
标题翻译：集成电路; 集成电路制造方法内存模块计算系统
公开(公告)号：US20080285344A1
公开(公告)日：2008-11-20
申请号：US11749028
申请日：2007-05-15
申请人： Eike Ruttkowski , Detlev Richter , Michael Specht , Joseph Willer , Dirk Manger , Kenny Oisin , Steffen Meyer , Klaus Knobloch , Holger Moeller , Doris Keitel Schulz , Jan Gutsche , Gert Koebernik , Christoph Friederich
发明人： Eike Ruttkowski , Detlev Richter , Michael Specht , Joseph Willer , Dirk Manger , Kenny Oisin , Steffen Meyer , Klaus Knobloch , Holger Moeller , Doris Keitel Schulz , Jan Gutsche , Gert Koebernik , Christoph Friederich
IPC分类号： G11C11/34 , H01L21/82
CPC分类号： H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524
摘要： Embodiments of the present invention relate generally to integrated circuits, methods for manufacturing an integrated circuit, memory modules, and computing systems.
摘要翻译：本发明的实施例一般涉及集成电路，用于制造集成电路的方法，存储器模块和计算系统。

83. 发明申请

US20130287652A1 SHELL-AND-TUBE REACTOR FOR CARRYING OUT CATALYTIC GAS PHASE REACTIONS 有权
标题翻译：用于携带催化气相反应的壳管反应器
公开(公告)号：US20130287652A1
公开(公告)日：2013-10-31
申请号：US13823525
申请日：2011-10-12
申请人： Manfred Lehr , Josef Dachs , Franz Egner , Rolf Bank , Bernd Stürmer , Volkmar Frick , Michael Specht
发明人： Manfred Lehr , Josef Dachs , Franz Egner , Rolf Bank , Bernd Stürmer , Volkmar Frick , Michael Specht
IPC分类号： B01J8/06
CPC分类号： B01J8/067 , B01J8/065 , B01J2208/0023 , B01J2208/00238 , B01J2208/0053 , C10G2/32 , C10G2/341 , C10L3/08 , F28F13/08
摘要： A tube bundle reactor for carrying out catalytic gas phase reactions, particularly methanation reactions, has a bundle of catalyst-filled reaction tubes through which reaction gas flows and around which heat carrier flows during operation. In the region of the catalyst filling, the reaction tubes run through at least two heat carrier zones which are separated from one another, the first of which heat carrier zones extends over the starting region of the catalyst filling. The reaction tubes each have a first reaction tube portion with a first hydraulic diameter of the catalyst filling and, downstream thereof in flow direction of the reaction gas, at least a second reaction tube portion with a second hydraulic diameter of the catalyst filling that is greater than the first hydraulic diameter of the catalyst filling.
摘要翻译：用于进行催化气相反应，特别是甲烷化反应的管束反应器具有一束催化剂填充的反应管，反应气体在其中流动并在运行期间使热载体流过。在催化剂填充的区域中，反应管穿过至少两个彼此分离的热载体区，其中第一个热载体区在催化剂填充物的起始区域上延伸。反应管各自具有第一反应管部分，其具有催化剂填充物的第一水力直径，并且在反应气体的流动方向上在其下游，至少第二反应管部分具有催化剂填充物的第二水力直径更大比第一液压直径的催化剂填充。

84. 发明授权

US08392753B1 Automatic failover during online data migration 有权
标题翻译：在线数据迁移期间自动故障切换
公开(公告)号：US08392753B1
公开(公告)日：2013-03-05
申请号：US12750391
申请日：2010-03-30
申请人： Arieh Don , Ian Wigmore , Michael Specht , Steven Goldberg , Vaishali Kochavara
发明人： Arieh Don , Ian Wigmore , Michael Specht , Steven Goldberg , Vaishali Kochavara
IPC分类号： G06F11/07
CPC分类号： G06F11/1662 , G06F11/2094
摘要： A technique automatically handles a failure during online data migration from a source array to a target array. While a host initially accesses data from the source array using multipath I/O software, the technique involves (i) transitioning the source array to a passive mode, and the target array to an active mode, and (ii) beginning a data transfer operation which transfers data from the source array to the target array. The technique further involves modifying the data on both the target array and the source array in response to modification commands sent to the target array from the host while the data transfer operation is ongoing. The technique further involves automatically failing back to providing access to the data from the source array in response to an event in which the target array loses communication with the source array for a predefined amount of time.
摘要翻译：在从源阵列到目标阵列的在线数据迁移过程中，技术自动处理故障。主机最初使用多路径I / O软件从源阵列访问数据，该技术涉及（i）将源阵列转换为被动模式，将目标阵列转换为活动模式，以及（ii）开始数据传输操作它将数据从源数组传输到目标数组。该技术还涉及在数据传送操作正在进行时响应于从主机发送到目标阵列的修改命令来修改目标阵列和源阵列上的数据。该技术进一步涉及自动失败以响应于目标阵列在预定义的时间量内与源阵列失去通信的事件来提供对来自源阵列的数据的访问。

85. 发明申请

US20100019345A1 Integrated Circuit with an Active Area Line Having at Least One Form-Supporting Element and Corresponding Method of Making an Integrated Circuit 有权
标题翻译：具有至少一个支撑元件的有源面积线的集成电路和制造集成电路的相应方法
公开(公告)号：US20100019345A1
公开(公告)日：2010-01-28
申请号：US12177930
申请日：2008-07-23
申请人： Josef Willer , Michael Specht , Christoph Friederich , Doris Keitel-Schulz
发明人： Josef Willer , Michael Specht , Christoph Friederich , Doris Keitel-Schulz
IPC分类号： H01L21/3065 , H01L23/58
CPC分类号： H01L21/28273 , H01L21/3086 , H01L21/32139 , H01L27/0207 , H01L27/11519 , H01L27/11521 , H01L29/66825 , H01L29/7881
摘要： An integrated circuit is described. The integrated circuit may have: an active area line formed of a material of a semiconductor substrate with a first longitudinal direction parallel to an upper surface of the semiconductor substrate; wherein the active area line has at least one form-supporting element extending in a second longitudinal direction parallel to the upper surface of the semiconductor substrate; and wherein the second longitudinal direction is arranged with regard to the first longitudinal direction in an angle unequal to 0 degree and unequal to 180 degree.
摘要翻译：描述了集成电路。集成电路可以具有：由具有与半导体衬底的上表面平行的第一纵向方向的半导体衬底的材料形成的有源区线; 其中所述有源面积线具有至少一个形状支撑元件，所述支撑元件在平行于所述半导体衬底的上表面的第二纵向方向上延伸; 并且其中所述第二纵向方向相对于所述第一纵向方向以不等于0度并且不等于180度的角度布置。

86. 发明授权

US07649779B2 Integrated circuits; methods for manufacturing an integrated circuit; memory modules; computing systems 有权
标题翻译：集成电路; 集成电路制造方法; 内存模块; 计算系统
公开(公告)号：US07649779B2
公开(公告)日：2010-01-19
申请号：US11749028
申请日：2007-05-15
申请人： Eike Ruttkowski , Detlev Richter , Michael Specht , Joseph Willer , Dirk Manger , Kenny Oisin , Steffen Meyer , Klaus Knobloch , Holger Moeller , Doris Keitel Schulz , Jan Gutsche , Gert Koebernik , Christoph Friederich
发明人： Eike Ruttkowski , Detlev Richter , Michael Specht , Joseph Willer , Dirk Manger , Kenny Oisin , Steffen Meyer , Klaus Knobloch , Holger Moeller , Doris Keitel Schulz , Jan Gutsche , Gert Koebernik , Christoph Friederich
IPC分类号： G11C16/00
CPC分类号： H01L27/0207 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524
摘要： Embodiments of the present invention relate generally to integrated circuits, methods for manufacturing an integrated circuit, memory modules, and computing systems.
摘要翻译：本发明的实施例一般涉及集成电路，用于制造集成电路的方法，存储器模块和计算系统。

87. 发明申请

US20080237694A1 Integrated circuit, cell, cell arrangement, method for manufacturing an integrated circuit, method for manufacturing a cell, memory module 审中-公开
标题翻译：集成电路，电池，电池布置，集成电路的制造方法，电池的制造方法，存储器模块
公开(公告)号：US20080237694A1
公开(公告)日：2008-10-02
申请号：US11728960
申请日：2007-03-27
申请人： Michael Specht , Nicolas Nagel , Josef Willer
发明人： Michael Specht , Nicolas Nagel , Josef Willer
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/792 , G11C16/0466 , H01L29/513
摘要： The invention relates to integrated circuits, to a cell, to a cell arrangement, to a method for manufacturing an integrated circuit, to a method for manufacturing a cell, and to a memory module. In an embodiment of the invention, an integrated circuit is provided having a cell, the cell including a low-k dielectric layer, a first high-k dielectric layer disposed above the low-k dielectric layer, a charge trapping layer disposed above the first high-k dielectric layer, and a second high-k dielectric layer disposed above the charge trapping layer.
摘要翻译：本发明涉及集成电路，单元，单元布置，集成电路的制造方法，单元的制造方法以及存储器模块。在本发明的实施例中，提供了具有单元的集成电路，该单元包括低k电介质层，设置在低k电介质层上方的第一高k电介质层，设置在第一高k电介质层和设置在电荷捕获层上方的第二高k电介质层。

88. 发明授权

US09057138B2 Energy supply system and operating method 有权
标题翻译：能源供应系统及运行方式
公开(公告)号：US09057138B2
公开(公告)日：2015-06-16
申请号：US13263940
申请日：2010-04-09
申请人： Bernd Stuermer , Volkmar Frick , Michael Specht , Michael Sterner , Berthold Hahn , Ulrich Zuberbuehler
发明人： Bernd Stuermer , Volkmar Frick , Michael Specht , Michael Sterner , Berthold Hahn , Ulrich Zuberbuehler
IPC分类号： F03B13/00 , C25B1/04 , C10L3/08 , C12M1/107 , C12M1/00
CPC分类号： C25B1/04 , C10L3/08 , C12M21/04 , C12M43/00 , C12M43/08 , C25B15/08 , Y02E50/343 , Y02E60/324 , Y02E60/366 , Y02P20/129 , Y02P20/133 , Y02P20/134
摘要： An energy supply system is provided with an electricity generating device for regeneratively generating electrical energy that can be fed into an electricity supply grid. The energy supply system includes an electricity generating device for regeneratively generating electrical energy which can be fed into an electricity supply grid, a hydrogen generating device for generating hydrogen using electrical energy from the regenerative electricity generating device, a methanation device for converting hydrogen generated by the hydrogen generating device and a supplied carbon oxide gas into a gas containing methane, and a gas providing device for providing a supplementary gas or a replacement gas in a variably specifiable supplementary/replacement gas quality suitable for feeding into a gas supply grid with the use of the gas containing methane from the methanation device and/or the hydrogen from the hydrogen generating device. A method of operating the system is also provided.
摘要翻译：能量供给系统具有用于再生发电的发电装置，该电能可供给到供电电网。能量供给系统包括用于再生发电的发电装置，其可以供给到供电电网;氢发生装置，其使用来自再生发电装置的电能产生氢;甲烷化装置，用于将由氢气生成装置和供给的碳氧化物气体组装成含有甲烷的气体，以及气体提供装置，用于以可变形式指定的补充/替换气体质量提供补充气体或替代气体，该气体适合于通过使用含有来自甲烷化装置的甲烷的气体和/或来自氢生成装置的氢气。还提供了一种操作该系统的方法。

89. 发明申请

US20130041051A1 METHOD FOR PRODUCING A METHANE-RICH PRODUCT GAS AND REACTOR SYSTEM USABLE FOR THAT PURPOSE 审中-公开
标题翻译：用于生产可用于该目的的富含甲烷的产品气体和反应器系统的方法
公开(公告)号：US20130041051A1
公开(公告)日：2013-02-14
申请号：US13517941
申请日：2010-11-11
申请人： Ulrich Zuberbuhler , Bernd Sturmer , Volkmar Frick , Michael Specht , Martin Buxbaum
发明人： Ulrich Zuberbuhler , Bernd Sturmer , Volkmar Frick , Michael Specht , Martin Buxbaum
IPC分类号： C07C1/12 , B01J19/00
CPC分类号： B01J19/0006 , B01J8/001 , B01J8/067 , B01J19/249 , B01J2208/00256 , B01J2208/00274 , B01J2208/025 , B01J2219/0004 , B01J2219/0006 , B01J2219/00063 , B01J2219/00065 , B01J2219/00108 , B01J2219/00162 , B01J2219/00202 , B01J2219/00213 , B01J2219/00231 , B01J2219/00236 , B01J2219/00238 , B01J2219/0024 , C07C1/12 , C10L3/08 , C07C9/04
摘要： The invention relates to a method for producing a methane-rich product gas, in which a starting gas containing hydrogen and carbon dioxide is catalytically methanated under the influence of at least one adjustatable parameter in at least two stages and at least one criterion relating to the composition of the product gas is monitored. The criterion is fulfilled under a condition influencing the method and when the condition changes, a change in the parameter setting that preserves fulfilment of the criterion is affected.
摘要翻译：本发明涉及一种生产富含甲烷的产物气体的方法，其中含有氢气和二氧化碳的起始气体在至少两个阶段的至少一个可调节参数的影响下被催化甲烷化，并且至少有一个与监测产品气体的组成。该条件在影响该方法的条件下实现，当条件变化时，影响到保持条件满足的参数设置的变化。

90. 发明申请

US20080073694A1 Memory cell arrangements and methods of manufacturing memory cell arrangements 有权
标题翻译：存储单元布置和制造存储单元布置的方法
公开(公告)号：US20080073694A1
公开(公告)日：2008-03-27
申请号：US11526149
申请日：2006-09-22
申请人： Josef Willer , Thomas Mikolajick , Nicolas Nagel , Michael Specht
发明人： Josef Willer , Thomas Mikolajick , Nicolas Nagel , Michael Specht
IPC分类号： H01L29/788
CPC分类号： H01L27/105 , H01L27/11526 , H01L27/11529
摘要： A memory cell arrangement includes a first memory cell string having a plurality of serially source-to-drain-coupled transistors, at least some of them being memory cells, a second memory cell string having a plurality of serially source-to-drain-coupled transistors, at least some of them being memory cells. A dielectric material is between and above the first memory cell string and the second memory cell string. A source/drain line groove is defined in the dielectric material. The source/drain line groove extends from a source/drain region of one transistor of the first memory cell string to a source/drain region of the second memory cell string. Electrically conductive filling material is disposed in the source/drain line groove. Dielectric filling material is disposed in the source/drain line groove between the source/drain regions.
摘要翻译：存储单元布置包括具有多个串联的源极至漏极耦合的晶体管的第一存储单元串，其中至少一些是存储单元;第二存储单元串，具有多个串联的源至漏耦合的晶体管晶体管，其中至少有一些是存储单元。电介质材料在第一存储单元串和第二存储单元串之间和之上。源极/漏极线沟槽限定在电介质材料中。源极/漏极线槽从第一存储单元串的一个晶体管的源极/漏极区域延伸到第二存储单元串的源极/漏极区域。导电填充材料设置在源极/漏极线槽中。电介质填充材料设置在源极/漏极区域之间的源极/漏极线沟槽中。

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