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    • 85. 发明授权
    • Method of producing gas barrier film
    • 阻气膜的制造方法
    • US08236388B2
    • 2012-08-07
    • US12553476
    • 2009-09-03
    • Tatsuya FujinamiToshiya Takahashi
    • Tatsuya FujinamiToshiya Takahashi
    • H05H1/24
    • C23C16/509C23C16/345H01J37/32091H01J37/32706
    • A method of producing a gas barrier film comprises the steps of: supplying a material gas including silane gas, ammonia gas and at least one of nitrogen gas and hydrogen gas to a process chamber; keeping the process chamber at an internal pressure of 20 to 200 Pa; holding a substrate in the process chamber at a substrate temperature of not more than 70° C.; forming a bias potential of −100 V or less at the substrate; and supplying power P (W) to the material gas so as to have a ratio P/Q of the power P to a silane gas flow rate Q (sccm) of 15 to 30 W/sccm to generate plasma, thereby depositing a silicon nitride layer on a surface of the substrate.
    • 制造阻气膜的方法包括以下步骤:向处理室供给包括硅烷气体,氨气和至少一种氮气和氢气的原料气体; 将处理室保持在20〜200Pa的内压; 在不超过70℃的基板温度下将基板保持在处理室中; 在衬底上形成-100V或更小的偏置电位; 并向原料气体供给功率P(W),使得功率P的比值P / Q为硅烷气体流量Q(sccm)为15〜30W / sccm,以产生等离子体,由此沉积氮化硅 层在基板的表面上。