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81. 发明申请

US20090181549A1 METHOD FOR FORMING A GATE INSULATING FILM 失效
标题翻译：形成绝缘膜的方法
公开(公告)号：US20090181549A1
公开(公告)日：2009-07-16
申请号：US12349192
申请日：2009-01-06
申请人： Kenji Yoneda , Kazuhiko Yamamoto
发明人： Kenji Yoneda , Kazuhiko Yamamoto
IPC分类号： H01L21/469
CPC分类号： H01L29/517 , C23C16/40 , C23C16/45531 , H01L21/02148 , H01L21/02156 , H01L21/02161 , H01L21/02164 , H01L21/02181 , H01L21/02192 , H01L21/02238 , H01L21/02255 , H01L21/0228 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28194 , H01L21/28202 , H01L21/3141 , H01L21/31608 , H01L21/31645 , H01L29/513
摘要： In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value.
摘要翻译：在由高介电常数金属硅酸盐形成的栅极绝缘膜的形成中，通过将表面吸附反应的沉积速率的饱和时间设定为含有金属等的前体的曝光时间，进行原子层析出（ALD），通过将氧化剂的曝光时间设定为金属氧化物膜的组成所需的时间达到化学计量值的97％以上。

82. 发明授权

US07525602B2 Liquid crystal television apparatus 失效
标题翻译：液晶电视机
公开(公告)号：US07525602B2
公开(公告)日：2009-04-28
申请号：US11270332
申请日：2005-11-09
申请人： Kazuhiko Yamamoto
发明人： Kazuhiko Yamamoto
IPC分类号： H04N5/50 , H04N3/14 , H05K1/18
CPC分类号： H05K1/141 , G02F1/13452 , H04N5/64 , H05K1/0298 , H05K1/148 , H05K2201/09972
摘要： A liquid crystal television apparatus includes a tuner, a signal processor, a liquid crystal cell, a light source for backlight, an inverter, and a power supply, includes a first circuit board including a single-sided board, a second circuit board including a multilayered board, and a connector that electrically connects the first and second circuit boards. An area of the second circuit board is smaller than the first circuit board. The signal processor is mounted on the second circuit board. On the first circuit board, the tuner is arranged in a lower portion of a left or right side of the first circuit board, the inverter is arranged in an upper portion of an opposite side of the first circuit board to the tuner, the power supply is arranged in a lower portion in the opposite side, and the connector is arranged in an upper portion of the same side.
摘要翻译：液晶电视装置包括调谐器，信号处理器，液晶单元，背光源，逆变器和电源，包括：第一电路板，包括单面板;第二电路板，包括：多层板，以及电连接第一和第二电路板的连接器。第二电路板的区域小于第一电路板。信号处理器安装在第二电路板上。在第一电路板上，调谐器布置在第一电路板的左侧或右侧的下部，反相器布置在与调谐器相反的第一电路板的上侧的上部，电源布置在相对侧的下部，并且连接器布置在同一侧的上部。

83. 发明授权

US07506008B2 Storage apparatus, storage control method, and computer product 失效
标题翻译：存储设备，存储控制方法和计算机产品
公开(公告)号：US07506008B2
公开(公告)日：2009-03-17
申请号：US11017972
申请日：2004-12-22
申请人： Kazuhiko Yamamoto
发明人： Kazuhiko Yamamoto
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06F17/30067 , Y10S707/99955
摘要： A storage apparatus includes a primary storage unit that stores data received from a host computer in a first storage area; a secondary storage unit that stores the data stored in the first storage area in a second storage area; a virtual-storage-area setting unit that logically combines the first storage area and the second storage area to set a plurality of virtual storage areas; and a data-storage control unit that controls data storage in such a manner that the data stored in the first storage area that belongs to a predetermined virtual storage area is stored in the second storage area that belongs to the predetermined virtual storage area.
摘要翻译：存储装置包括主存储单元，其将从主计算机接收的数据存储在第一存储区域中; 副存储单元，将存储在第一存储区域中的数据存储在第二存储区域中; 虚拟存储区域设置单元，其逻辑地组合第一存储区域和第二存储区域，以设置多个虚拟存储区域; 以及数据存储控制单元，其以使得存储在属于预定虚拟存储区域的第一存储区域中的数据被存储在属于预定虚拟存储区域的第二存储区域中的方式来控制数据存储。

84. 发明授权

US07465618B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07465618B2
公开(公告)日：2008-12-16
申请号：US11411932
申请日：2006-04-27
申请人： Shigenori Hayashi , Kazuhiko Yamamoto
发明人： Shigenori Hayashi , Kazuhiko Yamamoto
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/587
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/28229 , H01L21/823857 , H01L29/513 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
摘要翻译：半导体器件包括：半导体衬底; 栅极绝缘膜，形成在所述半导体基板上并且由高介电常数材料制成，所述高介电常数材料由垂直于所述半导体基板的主表面并与各相相垂直堆叠的多个层组成; 以及形成在栅极绝缘膜上的栅电极。

85. 发明申请

US20060281264A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060281264A1
公开(公告)日：2006-12-14
申请号：US11411932
申请日：2006-04-27
申请人： Shigenori Hayashi , Kazuhiko Yamamoto
发明人： Shigenori Hayashi , Kazuhiko Yamamoto
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/28229 , H01L21/823857 , H01L29/513 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
摘要翻译：半导体器件包括：半导体衬底; 栅极绝缘膜，形成在所述半导体基板上并且由高介电常数材料制成，所述高介电常数材料由垂直于所述半导体基板的主表面并与各相相垂直堆叠的多个层组成; 以及形成在栅极绝缘膜上的栅电极。

86. 发明申请

US20050111697A1 Object detection apparatus, distance measuring apparatus and object detection method 失效
标题翻译：物体检测装置，距离测量装置和物体检测方法
公开(公告)号：US20050111697A1
公开(公告)日：2005-05-26
申请号：US10788780
申请日：2004-02-27
申请人： Kazuhiko Yamamoto , Kunihito Kato , Ayami Iwata
发明人： Kazuhiko Yamamoto , Kunihito Kato , Ayami Iwata
IPC分类号： G06T1/00 , G06K9/00 , G06T7/00 , G06T7/20
CPC分类号： G06T7/269 , G06T7/74
摘要： A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.
摘要翻译：移动单元在参考平面上移动。移动单元具有用于检测参考平面上的物体的物体检测装置。物体检测装置包括照相机，镜子和计算机。镜子切割由相机接收的图像，使得照相机接收被分成参考平面图像和对象图像的图像。参考平面图像包含参考平面。对象图像包含对象，不包含参考平面。因此，距离测量装置可以容易地分离包括物体的区域和不包括物体的区域，并且精确地检测到物体的距离。

87. 发明授权

US06623594B1 Hot-melt sheet for holding and protecting semiconductor wafers and method for applying the same 失效
标题翻译：用于保持和保护半导体晶片的热熔片及其应用方法
公开(公告)号：US06623594B1
公开(公告)日：2003-09-23
申请号：US09348344
申请日：1999-07-08
申请人： Kazuhiko Yamamoto , Yuzo Akada
发明人： Kazuhiko Yamamoto , Yuzo Akada
IPC分类号： B32B3100
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , Y10T428/28 , Y10T428/2809 , Y10T428/2848 , Y10T428/2857 , Y10T428/2891
摘要： A sheet for holding and protecting semiconductor wafers which can closely follow up even a wafer surface having large roughness is disclosed. The hot-melt sheet for holding and protecting semiconductor is applied to a surface of a semiconductor wafer to thereby hold and protect the semiconductor wafer in processing the semiconductor wafer. The sheet comprises a hot-melt layer A having a melting point of 105° C. or below. A pressure-sensitive adhesive layer B may be formed on one surface of the hot-melt layer A. A reinforcing layer C having a melting point higher by 20° C. or more than that of hot-melt layer A may further be formed on one surface of the hot-melt layer A, provided that when the pressure-sensitive adhesive layer B is formed on one surface of the hot-melt layer A, the reinforcing layer C is formed on the opposite surface thereof.
摘要翻译：公开了用于保持和保护半导体晶片的片材，其可以紧密跟随甚至具有大粗糙度的晶片表面。将用于保持和保护半导体的热熔片施加到半导体晶片的表面，从而在半导体晶片的加工中保持和保护半导体晶片。该片材包含熔点为105℃或更低的热熔层A. 可以在热熔层A的一个表面上形成压敏粘合剂层B.可以在熔融层A上形成熔点高于20℃或更高的加热层C 在热熔层A的一个表面上，只要在热熔层A的一个表面上形成压敏粘合剂层B时，在相反的表面上形成增强层C.

88. 发明授权

US06218156B1 Gene encoding carbonyl reductase, and methods for its use 有权
标题翻译：基因编码羰基还原酶及其使用方法
公开(公告)号：US06218156B1
公开(公告)日：2001-04-17
申请号：US09367012
申请日：1999-11-24
申请人： Yoshihiko Yasohara , Noriyuki Kizaki , Junzo Hasegawa , Masaru Wada , Sakayu Shimizu , Michihiko Kataoka , Kazuhiko Yamamoto , Hiroshi Kawabata , Keiko Kita
发明人： Yoshihiko Yasohara , Noriyuki Kizaki , Junzo Hasegawa , Masaru Wada , Sakayu Shimizu , Michihiko Kataoka , Kazuhiko Yamamoto , Hiroshi Kawabata , Keiko Kita
IPC分类号： C12P762
CPC分类号： C12P7/62 , C12N9/0006 , C12P41/002
摘要： An enzyme having carbonyl reduction activity of reducing a carbonyl compound asymmetrically to produce an optically active alcohol, a DNA coding the enzyme, a plasmid having the DNA, a transformant which is a cell transformed with the plasmid, and a production method of an optically active alcohol using the enzyme and/or the transformed cell are provided.
摘要翻译：具有不对称还原羰基化合物以产生光学活性醇的羰基还原活性的酶，编码该酶的DNA，具有该DNA的质粒，作为用该质粒转化的细胞的转化体的转化体和光学活性物质的制备方法提供使用酶和/或转化细胞的醇。

89. 发明授权

US5680896A Method for production of rare earth metal-nickel hydrogen occlusive alloy ingot 失效
标题翻译：稀土金属镍氢合金锭生产方法
公开(公告)号：US5680896A
公开(公告)日：1997-10-28
申请号：US417934
申请日：1995-04-06
申请人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada , Nobuyuki Kitazume
发明人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada , Nobuyuki Kitazume
IPC分类号： B22D11/06 , C01B3/00 , C22C1/00 , C22C1/02 , C22C19/00 , C22C19/03 , H01M4/38 , B22D11/22
CPC分类号： C01B3/0057 , H01M4/383 , Y02E60/327 , Y10S420/90
摘要： A method for producing rare earth metal-nickel hydrogen occlusive alloy ingot that contains 90 vol % or more of crystals having a crystal grain size of 1 to 50 .mu.m as measured along a short axis of the crystal and 1 to 100 .mu.m as measured along a long axis of the crystal. The method for producing the rare earth metal-nickel hydrogen occlusive alloy ingot involves melting a rare earth metal-nickel alloy and uniformly solidifying the alloy melt to have a thickness of 0.1 to 20 mm under cooling conditions of a cooling rate of 10.degree. to 1000.degree. C./sec and a sub-cooling degree of 10.degree. to 500.degree. C.
摘要翻译：一种稀土金属 - 镍氢合金合金锭的制造方法，其特征在于，沿着所述晶体的短轴测定的结晶粒径为1〜50μm的晶体的90体积％以上且1〜100μm的测定值沿着晶体的长轴。制备稀土金属 - 镍氢合金合金锭的方法包括在10至1000的冷却速率的冷却条件下熔化稀土金属 - 镍合金并使合金熔体均匀地固化，厚度为0.1-20mm ℃/秒，次冷度为10〜500℃。

90. 发明授权

US5656100A Alloy ingot for permanent magnet, anisotropic powders for permanent magnet, method for producing same and permanent magnet 失效
公开(公告)号：US5656100A
公开(公告)日：1997-08-12
申请号：US636905
申请日：1996-04-18
申请人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada
发明人： Kazuhiko Yamamoto , Yuichi Miyake , Chikara Okada
IPC分类号： B22F9/02 , C22C1/03 , C22C1/04 , H01F1/055 , H01F1/057 , H01F1/058 , H01F1/059
CPC分类号： H01F1/055 , B22F9/023 , C22C1/03 , C22C1/0441 , H01F1/057 , H01F1/0571 , H01F1/0573 , H01F1/058 , H01F1/059
摘要： An alloy ingot for permanent magnet consists essentially of rare earth metal and iron and optionally boron. The two-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 100 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The three-component alloy ingot contains 90 vol % or more of crystals having a crystal grain size along a short axis of 0.1 to 50 .mu.m and that along a long axis of 0.1 to 100 .mu.m. The alloy ingot is produced by solidifying the molten alloy uniformly at a cooling rate of 10.degree. to 1000.degree. C./sec. at a sub-cooling degree of 10.degree. to 500.degree. C. A permanent magnet and anisotropic powders are produced from the alloy ingot.

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