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    • 81. 发明授权
    • Magnetoresistance effects film
    • 磁阻效应胶片
    • US5917400A
    • 1999-06-29
    • US593689
    • 1996-01-29
    • Jun-ichi FujikataKazuhiko HayashiHidefumi YamamotoKunihiko Ishihara
    • Jun-ichi FujikataKazuhiko HayashiHidefumi YamamotoKunihiko Ishihara
    • G01R33/09G11B5/39H01F10/08H01F10/18H01F10/28H01F10/32H01L43/08H01L43/00
    • H01L43/08Y10S428/90Y10T428/1121Y10T428/26Y10T428/265
    • The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O (x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
    • 本发明提供了一种磁电阻效应膜,其包括(a)沉积在基板上的至少两个薄磁膜,(b)介于薄磁膜之间的至少一个薄非磁性膜,(c)与一个薄的反铁磁膜 的薄磁性膜,薄的非磁性膜被插入其间。 由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜(Hr> HC2)的另一个薄磁膜的矫顽力HC2。 薄的反铁磁膜具有由NiO,NixCo1-xO(x = 0.1-0.9)和CoO中的至少两种构成的超晶格结构。 超晶格结构中的原子数相对于Co的比例设定为1.0以上。 即使施加小的外部场,磁阻效应膜也呈现大的电阻线性变化,滞后小。