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    • 86. 发明申请
    • SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
    • 转子转矩记忆自读参考读写方法
    • US20110026317A1
    • 2011-02-03
    • US12903305
    • 2010-10-13
    • Wenzhong ZhuYiran ChenXiaobin WangZheng GaoHaiwen XiDimitar V. Dimitrov
    • Wenzhong ZhuYiran ChenXiaobin WangZheng GaoHaiwen XiDimitar V. Dimitrov
    • G11C11/00
    • G11C11/1675G11C11/1659G11C11/1673
    • A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
    • 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场,形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流,并与第一位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。
    • 90. 发明申请
    • Resistive Sense Memory Calibration for Self-Reference Read Method
    • 用于自参考读取方法的电阻式感应存储器校准
    • US20100110760A1
    • 2010-05-06
    • US12390728
    • 2009-02-23
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • Yiran ChenHai LiWenzhong ZhuXiaobin WangHenry HuangHongyue Liu
    • G11C11/00G11C11/416G11C7/00G11C11/24
    • G11C13/004G11C11/1673G11C27/02G11C2013/0057G11C2207/2254
    • Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.
    • 描述了自参考读取方法的电阻记忆校准。 读取电阻性存储器单元的一种自参考方法包括将多个电阻存储器单元设置为第一电阻数据状态。 电阻存储器单元形成存储器阵列。 通过施加第一读取电流和第二读取电流通过每个电阻性存储器单元,然后比较由第一读取电流和第二读取电流形成的电压,来为每个电阻性存储器单元读取感测的电阻数据状态,以确定感测的电阻数据状态 每个电阻存储器单元。 然后,该方法包括调整每个电阻性存储器单元的第一或第二读取电流,读取电压或存储器件电容,其中感测的电阻数据状态与第一电阻数据状态不同,直到感测的电阻数据状态相同 作为第一电阻数据状态。