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    • 81. 发明授权
    • Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition
    • 使用无电沉积膜形成平坦化Cu互连层的方法和装置
    • US06864181B2
    • 2005-03-08
    • US10402600
    • 2003-03-27
    • Fred C. RedekerJohn Boyd
    • Fred C. RedekerJohn Boyd
    • H01L21/288H01L21/768H01L21/311C03C15/00H01L23/48
    • H01L21/288H01L21/7684
    • A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.
    • 在包括窄和宽的特征的衬底上形成平坦化的导电材料。 导电材料通过一系列沉积工艺形成。 第一沉积工艺形成导电材料的第一层,其填充窄特征并且至少部分地填充宽的特征。 第二沉积工艺在第一层的空腔内形成导电材料的第二层。 柔性材料可以减小衬底之上的第一层的厚度,同时将溶液递送到空腔以在其中形成第二层。 柔性材料可以是连接到填充有溶液的可加压储存器的多孔膜。 柔性材料也可以是用溶液润湿的多孔体材料。
    • 82. 发明授权
    • Platen design for improving edge performance in CMP applications
    • 用于提高CMP应用中边缘性能的压板设计
    • US06776695B2
    • 2004-08-17
    • US09747828
    • 2000-12-21
    • Alek OwczarzJohn BoydRod Kistler
    • Alek OwczarzJohn BoydRod Kistler
    • B24B100
    • B24B37/32B24B21/04
    • An invention is disclosed for improving edge performance in a chemical mechanical polishing process is disclosed. The system includes a wafer head disposed above a wafer, where the wafer head includes a first active retaining ring capable of extension and retraction. Below the wafer head is a polishing belt, and disposed below the polishing belt is a platen having a second active retaining ring capable of extension and retraction. During operation the first active retaining ring and the second active retaining ring can be controlled to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.
    • 公开了一种用于改善化学机械抛光工艺中的边缘性能的发明。 该系统包括设置在晶片上方的晶片头,其中晶片头包括能够延伸和缩回的第一主动保持环。 在晶片头下方是抛光带,并且在抛光带下方设置有具有能够延伸和缩回的第二主动保持环的压板。 在操作期间,可以控制第一主动保持环和第二主动保持环以提供抛光带的位置控制,从而调整和控制在晶片边缘处的去除速率。